| Year |
Citation |
Score |
| 2014 |
Bradshaw GK, Samberg JP, Carlin CZ, Colter PC, Edmondson KM, Hong W, Fetzer C, Karam N, Bedair SM. GaInP/GaAs tandem solar cells with InGaAs/GaAsP multiple quantum wells Ieee Journal of Photovoltaics. 4: 614-619. DOI: 10.1109/Jphotov.2013.2294750 |
0.376 |
|
| 2013 |
Law DC, Boisvert JC, Rehder EM, Chiu PT, Mesropian S, Woo RL, Liu XQ, Hong WD, Fetzer CM, Singer SB, Bhusari DM, Edmondson KM, Zakaria A, Jun B, Krut DD, et al. Recent progress of spectrolab high-efficiency space solar cells Proceedings of Spie - the International Society For Optical Engineering. 8876. DOI: 10.1117/12.2026756 |
0.349 |
|
| 2012 |
Jones RK, Ermer JH, Fetzer CM, King RR. Evolution of multijunction solar cell technology for concentrating photovoltaics Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.10Nd01 |
0.351 |
|
| 2012 |
Fetzer CM, Liu XQ, Chang J, Hong W, Palmer A, Bhusari D, Jun B, Lau M, Lee H. Progress in large area organometallic vapor phase epitaxy for III-V multijunction photovoltaics Journal of Crystal Growth. 352: 181-185. DOI: 10.1016/J.Jcrysgro.2011.11.010 |
0.43 |
|
| 2012 |
Liu XQ, Fetzer CM, Rehder E, Cotal H, Mesropian S, Law D, King RR. Organometallic vapor phase epitaxy growth of upright metamorphic multijunction solar cells Journal of Crystal Growth. 352: 186-189. DOI: 10.1016/J.Jcrysgro.2011.10.024 |
0.43 |
|
| 2012 |
King RR, Bhusari D, Larrabee D, Liu XQ, Rehder E, Edmondson K, Cotal H, Jones RK, Ermer JH, Fetzer CM, Law DC, Karam NH. Solar cell generations over 40% efficiency Progress in Photovoltaics: Research and Applications. 20: 801-815. DOI: 10.1002/Pip.1255 |
0.375 |
|
| 2010 |
Zakaria A, Fetzer CM, Goorsky MS. Influence of the degree of order of InGaP on its hardness determined using nanoindentation Journal of Applied Physics. 108. DOI: 10.1063/1.3477322 |
0.319 |
|
| 2010 |
Law DC, King RR, Yoon H, Archer MJ, Boca A, Fetzer CM, Mesropian S, Isshiki T, Haddad M, Edmondson KM, Bhusari D, Yen J, Sherif RA, Atwater HA, Karam NH. Future technology pathways of terrestrial III-V multijunction solar cells for concentrator photovoltaic systems Solar Energy Materials and Solar Cells. 94: 1314-1318. DOI: 10.1016/J.Solmat.2008.07.014 |
0.418 |
|
| 2009 |
Cotal H, Fetzer C, Boisvert J, Kinsey G, King R, Hebert P, Yoon H, Karam N. III-V multijunction solar cells for concentrating photovoltaics Energy and Environmental Science. 2: 174-192. DOI: 10.1039/B809257E |
0.361 |
|
| 2008 |
Archer MJ, Law DC, Mesropian S, Haddad M, Fetzer CM, Ackerman AC, Ladous C, King RR, Atwater HA. GaInP∕GaAs dual junction solar cells on Ge∕Si epitaxial templates Applied Physics Letters. 92: 103503. DOI: 10.1063/1.2887904 |
0.383 |
|
| 2007 |
King RR, Law DC, Edmondson KM, Fetzer CM, Kinsey GS, Yoon H, Krut DD, Ermer JH, Sherif RA, Karam NH. Advances in high-efficiency III-V multijunction solar cells Advances in Optoelectronics. 2007. DOI: 10.1155/2007/29523 |
0.421 |
|
| 2007 |
King RR, Law DC, Edmondson KM, Fetzer CM, Kinsey GS, Yoon H, Sherif RA, Karam NH. 40% efficient metamorphic GaInPGaInAsGe multijunction solar cells Applied Physics Letters. 90. DOI: 10.1063/1.2734507 |
0.361 |
|
| 2005 |
Fetzer CM, Yoon H, King RR, Law DC, Isshiki TD, Karam NH. 1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge Journal of Crystal Growth. 276: 48-56. DOI: 10.1016/J.Jcrysgro.2004.11.401 |
0.46 |
|
| 2005 |
Yoon H, Granata JE, Hebert P, King RR, Fetzer CM, Colter PC, Edmondson KM, Law D, Kinsey GS, Krut DD, Ermer JH, Gillanders MS, Karam NH. Recent advances in high-efficiency III-V multi-junction solar cells for space applications: Ultra triple junction qualification Progress in Photovoltaics: Research and Applications. 13: 133-139. DOI: 10.1002/Pip.610 |
0.36 |
|
| 2004 |
Fetzer CM, King RR, Colter PC, Edmondson KM, Law DC, Stavrides AP, Yoon H, Ermer JH, Romero MJ, Karam NH. High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE Journal of Crystal Growth. 261: 341-348. DOI: 10.1016/J.Jcrysgro.2003.11.026 |
0.424 |
|
| 2003 |
Kinsey GS, King RR, Edmondson KM, Stavrides AP, Yoon H, Fetzer CM, Colter PC, Ermer JH, Gillanders MS, Hebert P, Granata JE, Karam NH. Ultra triple-junction high-efficiency solar cells Ieee Aerospace and Electronic Systems Magazine. 18: 8-10. DOI: 10.1109/Maes.2003.1193711 |
0.309 |
|
| 2002 |
Fetzer CM, Lee RT, Stringfellow GB, Liu XQ, Sasaki A, Ohno N. Effect of surfactant Sb on carrier lifetime in GaInP epilayers Journal of Applied Physics. 91: 199-203. DOI: 10.1063/1.1423396 |
0.568 |
|
| 2002 |
Shurtleff JK, Lee RT, Fetzer CM, Stringfellow GB, Lee S, Seong TY. Time dependent surfactant effects on growth of GaInP heterostructures by organometallic vapor phase epitaxy Journal of Crystal Growth. 234: 327-336. DOI: 10.1016/S0022-0248(01)01713-4 |
0.621 |
|
| 2001 |
Jun SW, Stringfellow GB, Howard AD, Fetzer CM, Shurtleff JK. Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy Journal of Applied Physics. 90: 6048-6053. DOI: 10.1063/1.1416857 |
0.659 |
|
| 2001 |
Fetzer CM, Lee RT, Chapman DC, Stringfellow GB. Spectroscopic study of surfactant enhanced organometallic vapor phase epitaxy growth of GaInP Journal of Applied Physics. 90: 1040-1046. DOI: 10.1063/1.1378060 |
0.563 |
|
| 2001 |
Fetzer CM, Lee RT, Jun SW, Stringfellow GB, Lee SM, Seong TY. Sb enhancement of lateral superlattice formation in GaInP Applied Physics Letters. 78: 1376-1378. DOI: 10.1063/1.1350424 |
0.591 |
|
| 2001 |
Lee RT, Fetzer CM, Jun SW, Chapman DC, Shurtleff JK, Stringfellow GB, Ok YW, Seong TY. Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth Journal of Crystal Growth. 233: 490-502. DOI: 10.1016/S0022-0248(01)01595-0 |
0.604 |
|
| 2000 |
Stringfellow GB, Fetzer CM, Lee RT, Jun SW, Shurtleff JK. Surfactant effects on ordering in GalnP grown by OMVPE Materials Research Society Symposium - Proceedings. 583: 201-210. DOI: 10.1557/Proc-583-201 |
0.61 |
|
| 2000 |
Hsu Y, Fetzer CM, Stringfellow GB, Shurtleff JK, Choi CJ, Seong TY. Heterestructures in GaInP grown using a change in Te doping Journal of Applied Physics. 87: 7776-7781. DOI: 10.1063/1.373453 |
0.591 |
|
| 2000 |
Lee RT, Shurtleff JK, Fetzer CM, Stringfellow GB, Lee S, Seong TY. Surfactant controlled growth of GalnP by organometallic vapor phase epitaxy Journal of Applied Physics. 87: 3730-3735. DOI: 10.1063/1.372408 |
0.65 |
|
| 2000 |
Jun SW, Lee RT, Fetzer CM, Shurtleff JK, Stringfellow GB, Choi CJ, Seong TY. Bi surfactant control of ordering and surface structure in GalnP grown by organometallic vapor phase epitaxy Journal of Applied Physics. 88: 4429-4433. DOI: 10.1063/1.1289478 |
0.629 |
|
| 2000 |
Jun SW, Fetzer CM, Lee RT, Shurtleff JK, Stringfellow GB. Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy Applied Physics Letters. 76: 2716-2718. DOI: 10.1063/1.126453 |
0.651 |
|
| 2000 |
Fetzer CM, Lee RT, Shurtleff JK, Stringfellow GB, Lee SM, Seong TY. The use of a surfactant (Sb) to induce triple period ordering in GaInP Applied Physics Letters. 76: 1440-1442. DOI: 10.1063/1.126057 |
0.632 |
|
| 2000 |
Stringfellow GB, Shurtleff JK, Lee RT, Fetzer CM, Jun SW. Surface processes in OMVPE - the frontiers Journal of Crystal Growth. 221: 1-11. DOI: 10.1016/S0022-0248(00)00640-0 |
0.638 |
|
| 2000 |
Stringfellow GB, Lee RT, Fetzer CM, Shurtleff JK, Hsu Y, Jun SW, Lee S, Seong TY. Surfactant effects of dopants on ordering in GaInP Journal of Electronic Materials. 29: 134-139. DOI: 10.1007/S11664-000-0108-2 |
0.612 |
|
| 1999 |
Lee SH, Fetzer CM, Stringfellow GB, Choi CJ, Seong TY. Step structure and ordering in Zn-doped GaInP Journal of Applied Physics. 86: 1982-1987. DOI: 10.1063/1.370997 |
0.605 |
|
| 1999 |
Shurtleff JK, Lee RT, Fetzer CM, Stringfellow GB. Band-gap control of GaInP using Sb as a surfactant Applied Physics Letters. 75: 1914-1916. DOI: 10.1063/1.124869 |
0.628 |
|
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