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Xiaoli He, Ph.D. - Publications

Affiliations: 
2013 Nanoscale Science and Engineering-Nanoscale Engineering State University of New York, Albany, Albany, NY, United States 
Area:
Nanoscience, Nanotechnology, Materials Science Engineering
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9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Yamaguchi S, Bayindir Z, He X, Uppal S, Srinivasan P, Yong C, Choi D, Joshi M, Yang HS, Hu O, Samavedam S, Sohn DK. Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices Microelectronics Reliability. 72: 80-84. DOI: 10.1016/J.Microrel.2017.04.004  0.31
2013 Kawde AY, O'Toole AW, He X, Phillips R, Lemke A, Murray T, Geer R, Eisenbraun E. Electrochemical catalytic behavior for platinum functionalized TiO2 nanotube arrays in PEM fuel cells Prehospital and Disaster Medicine. 1497. DOI: 10.1557/Opl.2013.328  0.558
2013 He X, Phillips R, Kawde A, Hansen R, Lee JH, Lund I, Eisenbraun E, Geer RE. Si/TiOx core/shell nanowires with branched cathode support structures for Pt catalysts in PEM fuel cells Prehospital and Disaster Medicine. 1497. DOI: 10.1557/Opl.2013.327  0.647
2013 Phillips R, O'Toole A, He X, Hansen R, Geer R, Eisenbraun E. Processing and functionalization of conductive substoichiometric TiO 2 catalyst supports for PEM fuel cell applications Journal of Materials Research. 28: 461-467. DOI: 10.1557/Jmr.2012.324  0.598
2012 He X, Geer RE. High total-dose proton radiation tolerance in TiN/HfO2/TiN ReRAM devices Materials Research Society Symposium Proceedings. 1430: 165-170. DOI: 10.1557/Opl.2012.1101  0.679
2012 He X, Wang W, Butcher B, Tanachutiwat S, Geer RE. Superior TID hardness in TiN/HfO 2/TiN ReRAMs after proton radiation Ieee Transactions On Nuclear Science. 59: 2550-2555. DOI: 10.1109/Tns.2012.2208480  0.673
2011 He X, Tokranova NA, Wang W, Geer RE. Improved resistive switching properties in HfO2-based ReRAMs by Hf/Au doping Materials Research Society Symposium Proceedings. 1394: 81-86. DOI: 10.1557/Opl.2012.530  0.678
2010 Butcher B, He X, Huang M, Wang Y, Liu Q, Lv H, Liu M, Wang W. Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices. Nanotechnology. 21: 475206. PMID 21030760 DOI: 10.1088/0957-4484/21/47/475206  0.522
2009 Liu M, Abid Z, Wang W, He X, Liu Q, Guan W. Multilevel resistive switching with ionic and metallic filaments Applied Physics Letters. 94: 233106. DOI: 10.1063/1.3151822  0.474
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