Year |
Citation |
Score |
2016 |
Kambour KE, Kouhestani C, Nguyen DD, Devine RAB. Effect of radiation induced charging on gate-all-around NMOS devices Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4939500 |
0.369 |
|
2015 |
Kouhestani C, Nguyen DD, Kambour KE, Devine RAB, Chen J, Li G, Yang Y. Ionizing radiation induced parametric variations in P3HT:PCBM organic photovoltaic cells Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4917008 |
0.353 |
|
2015 |
Kambour KE, Kouhestani C, McMarr P, Hughes HL, Steinke DR, Devine RAB. Negative bias temperature instability threshold voltage shift turnaround in SiGe channel MOSFETs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4907416 |
0.416 |
|
2014 |
Nguyen DD, Kouhestani C, Kambour KE, Devine RAB. Direct evidence for interface state annealing in the negative bias temperature instability response Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4837436 |
0.4 |
|
2013 |
Nguyen DD, Kouhestani C, Kambour KE, Devine RAB. Insight into the multicomponent nature of negative bias temperature instability Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4796115 |
0.404 |
|
2013 |
Nguyen DD, Kouhestani C, Kambour KE, Hjalmarson HP, Devine RAB. Extraction of recoverable and permanent trapped charge resulting from negative bias temperature instability Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 259-262. DOI: 10.1002/Pssc.201200412 |
0.406 |
|
2011 |
Kambour KE, Kouhestani C, Nguyen D, Rosen N, Devine RAB. Tunneling discharge of positive trapped oxide charge in p-channel field effect transistors Applied Physics Letters. 99. DOI: 10.1063/1.3628462 |
0.442 |
|
2003 |
Kambour KE, Hjalmarson HP, Myles CW. Theory of optically-triggered electrical breakdown of semiconductors Conference On Electrical Insulation and Dielectric Phenomena (Ceidp), Annual Report. 345-348. |
0.355 |
|
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