| Year |
Citation |
Score |
| 2024 |
Ramachandran A, Wilbur GR, Mathew R, Mason A, O'Neal S, Deppe DG, Hall KC. Robust parallel laser driving of quantum dots for multiplexing of quantum light sources. Scientific Reports. 14: 5356. PMID 38438449 DOI: 10.1038/s41598-024-55634-0 |
0.5 |
|
| 2020 |
Bayat M, Deppe DG. Laser Characteristics for VCSELs for 77 K and 4 K Optical Data Applications Ieee Journal of Quantum Electronics. 56: 1-6. DOI: 10.1109/Jqe.2020.2967783 |
0.399 |
|
| 2018 |
Deppe DG, Li M, Yang X, Bayat M. Advanced VCSEL Technology: Self-Heating and Intrinsic Modulation Response Ieee Journal of Quantum Electronics. 54: 1-9. DOI: 10.1109/Jqe.2018.2826718 |
0.379 |
|
| 2017 |
Deppe D, Leshin J, Leshin J, Eifert L, Tucker F, Hillyer T. Transverse mode confinement in lithographic VCSELs Electronics Letters. 53: 1598-1600. DOI: 10.1049/El.2017.2780 |
0.431 |
|
| 2015 |
Yang X, Li M, Zhao G, Zhang Y, Freisem S, Deppe D. Small-sized lithographic single-mode VCSELs with high-power conversion efficiency Proceedings of Spie. 9381. DOI: 10.1117/12.2079920 |
0.31 |
|
| 2015 |
Li M, Yang X, Zhang Y, Zhao G, Beadsworth J, Eifert L, Tucker F, Deppe DG. 901 nm Lithographic vertical-cavity surfaceemitting laser with stable single-lobed beam pattern Electronics Letters. 51: 1683-1684. DOI: 10.1049/El.2015.3003 |
0.417 |
|
| 2015 |
Yang X, Deppe D, Zhao G, Li M. Stress test of lithographic vertical-cavity surface-emitting lasers under extreme operating conditions Electronics Letters. 51: 1279-1280. DOI: 10.1049/El.2015.1385 |
0.382 |
|
| 2014 |
Mathew R, Gamouras A, Dilcher E, Ramachandran AP, Yang HYS, Freisem S, Deppe DG, Hall KC. Applications of femtosecond pulse engineering in the control of excitons in quantum dots Proceedings of Spie - the International Society For Optical Engineering. 9167. DOI: 10.1117/12.2064789 |
0.55 |
|
| 2014 |
Mathew R, Dilcher E, Gamouras A, Ramachandran A, Yang HYS, Freisem S, Deppe D, Hall KC. Subpicosecond adiabatic rapid passage on a single semiconductor quantum dot: Phonon-mediated dephasing in the strong-driving regime Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.035316 |
0.547 |
|
| 2014 |
Yang X, Li MX, Zhao G, Freisem S, Deppe DG. Small oxide-free vertical-cavity surface-emitting lasers with high efficiency and high power Electronics Letters. 50: 1864-1866. DOI: 10.1049/El.2014.3352 |
0.468 |
|
| 2014 |
Yang X, Li M, Zhao G, Zhang Y, Freisem S, Deppe DG. Oxide-free vertical-cavity surface-emitting lasers with low junction temperature and high drive level Electronics Letters. 50: 1474-1475. DOI: 10.1049/El.2014.2626 |
0.403 |
|
| 2014 |
Mathew R, Dilcher E, Gamouras A, Ramachandran AP, Freisem S, Deppe DG, Hall KC. Subpicosecond adiabatic rapid passage in a single InGaAs quantum dot: Role of phonons in dephasing Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014. |
0.432 |
|
| 2014 |
Mathew R, Dilcher E, Gamouras A, Ramachandran AP, Freisem S, Deppe DG, Hall KC. Subpicosecond adiabatic rapid passage in a single InGaAs quantum dot: Role of phonons in dephasing Optics Infobase Conference Papers. |
0.441 |
|
| 2013 |
Gamouras A, Mathew R, Freisem S, Deppe DG, Hall KC. Simultaneous deterministic control of distant qubits in two semiconductor quantum dots. Nano Letters. 13: 4666-70. PMID 24001027 DOI: 10.1021/Nl4018176 |
0.529 |
|
| 2013 |
Liu X, Zhao G, Zhang Y, Deppe DG. Semiconductor laser monolithically pumped with a light emitting diode operating in the thermoelectrophotonic regime Applied Physics Letters. 102. DOI: 10.1063/1.4793656 |
0.496 |
|
| 2013 |
Liu X, Zhang Y, Zhao G, Deppe DG. Possibility for breaking the unity efficiency barrier: Semiconductor laser optically pumped by an integrated light emitting diode Cleo: Science and Innovations, Cleo_si 2013. CTh1G.8. |
0.318 |
|
| 2012 |
Deng Q, Deng H, Deppe DG. Radiation fields from whispering-gallery modes of oxide-confined vertical-cavity surface-emitting lasers. Optics Letters. 22: 463-5. PMID 18183235 DOI: 10.1364/Ol.22.000463 |
0.37 |
|
| 2012 |
Deppe DG. Quantum dots for high powers and efficiencies 2012 Ieee Photonics Society Summer Topical Meeting Series, Psst 2012. 49-50. DOI: 10.1109/PHOSST.2012.6280780 |
0.4 |
|
| 2012 |
Deppe DG, Liu X, Zhao G, Zhang Y. Semiconductor laser integrated with a thermoelectrophotonic light emitting diode heat pump 2012 Ieee Photonics Conference, Ipc 2012. 852-853. DOI: 10.1109/IPCon.2012.6359262 |
0.304 |
|
| 2012 |
Zhao G, Zhang Y, Deppe DG, Kronthasinghe K, Muller A. Buried heterostructure VCSEL with semiconductor mirrors 2012 Ieee Photonics Conference, Ipc 2012. 250-251. DOI: 10.1109/IPCon.2012.6358586 |
0.422 |
|
| 2012 |
Liu X, Zhao G, Zhang Y, Deppe DG. Optoelectronic chip based on a laser integrated with a thermoelectrophotonic heat pump Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340117 |
0.302 |
|
| 2012 |
Zhao G, Zhang Y, Deppe DG, Konthasinghe K, Muller A. Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors Applied Physics Letters. 101. DOI: 10.1063/1.4750062 |
0.503 |
|
| 2011 |
Zhao G, Demir A, Freisem S, Zhang Y, Liu X, Deppe DG. New VCSEL technology with scalability for single mode operation and densely integrated arrays Proceedings of Spie - the International Society For Optical Engineering. 8054. DOI: 10.1117/12.887953 |
0.401 |
|
| 2011 |
Demir A, Zhao G, Freisem S, Liu X, Deppe DG. Scaling properties of lithographic VCSELs Proceedings of Spie - the International Society For Optical Engineering. 7952. DOI: 10.1117/12.875579 |
0.429 |
|
| 2011 |
Cho JH, Bass M, Cassanho A, Jenssen HP, Freisem S, Deppe DG. Properties of up conversion phosphors necessary for small size emissive displays Ieee/Osa Journal of Display Technology. 7: 77-83. DOI: 10.1109/Jdt.2010.2095410 |
0.31 |
|
| 2010 |
Muller A, Flagg EB, Deppe DG, Salamo GJ, Shih CK. Coherently controlled quantum emitters in cavities Proceedings of Spie - the International Society For Optical Engineering. 7611. DOI: 10.1117/12.847066 |
0.499 |
|
| 2010 |
Demir A, Zhao G, Deppe DG. Lithographic lasers with low thermal resistance Electronics Letters. 46: 1147-1149. DOI: 10.1049/El.2010.8532 |
0.459 |
|
| 2010 |
Demir A, Zhao G, Ozgur G, Freisem S, Deppe DG. Lithographic and oxide-free vertical cavity surface emitting laser Optics Infobase Conference Papers. |
0.34 |
|
| 2009 |
Ozgur G, Demir A, Deppe DG. Transparency current influence on the temperature dependent threshold of undoped and P-doped QD laser diodes Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 737-738. DOI: 10.1109/LEOS.2009.5343358 |
0.455 |
|
| 2009 |
Ozgur G, Demir A, Deppe DG. Threshold temperature dependence of a quantum-dot laser diode with and without p-doping Ieee Journal of Quantum Electronics. 45: 1265-1272. DOI: 10.1109/Jqe.2009.2025660 |
0.526 |
|
| 2009 |
Deppe DG, Shavritranuruk K, Ozgur G, Chen H, Freisem S. Quantum dot laser diode with low threshold and low internal loss Electronics Letters. 45: 54-56. DOI: 10.1049/El:20092873 |
0.566 |
|
| 2009 |
Flagg EB, Muller A, Robertson JW, Founta S, Deppe DG, Xiao M, Ma W, Salamo GJ, Shih CK. Resonantly driven coherent oscillations in a solid-state quantum emitter Nature Physics. 5: 203-207. DOI: 10.1038/Nphys1184 |
0.538 |
|
| 2009 |
Demir A, Ozgur G, Shavitranuruk K, Freisem S, Deppe DG. Threshold and temperature dependence of quantum dot laser diodes approaching ideal performance Optics Infobase Conference Papers. |
0.485 |
|
| 2008 |
Flagg EB, Muller A, Robertson JW, Tran T, Deppe DG, Zhang J, Wenquan M, Salamo G, Shih CK. Photon-photon correlations from a resonantly driven quantum dot in a microcavity Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. DOI: 10.1109/QELS.2008.4552468 |
0.404 |
|
| 2008 |
Shavitranuruk K, Kim J, Freisem S, Ozgur G, Chen H, Deppe DG, Ardey A, Delfyett P. Large cavity single layer quantum dot laser diodes Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 533-534. DOI: 10.1109/LEOS.2008.4688727 |
0.528 |
|
| 2008 |
Deppe DG, Freisem S, Ozgur G, Shavritranuruk K, Chen H. Very low threshold current density continuous-wave quantum dot laser diode Conference Digest - Ieee International Semiconductor Laser Conference. 33-34. DOI: 10.1109/ISLC.2008.4635995 |
0.434 |
|
| 2008 |
Deppe DG, Freisem S, Chen H, Shavritnaruk K, Demir A, Ozgur G. Physics of quantum dot lasers: Threshold temperature dependence, internal loss effects, and threshold current density 2008 Int. Nano-Optoelectronics Workshop, Inow 2008 in Cooperation With Int. Global-Coe Summer School (Photonics Integration-Core Electronics: Pice) and 31st Int. Symposium On Optical Communications. 64-65. DOI: 10.1109/INOW.2008.4634445 |
0.483 |
|
| 2008 |
Freisem S, Ozgur G, Shavritranuruk K, Chen H, Deppe DG. Very-low-threshold current density continuous-wave quantum-dot laser diode Electronics Letters. 44: 679-681. DOI: 10.1049/El:20080656 |
0.577 |
|
| 2007 |
Yang T, Mock A, O'Brien JD, Lipson S, Deppe DG. Lasing characteristics of InAs quantum dot microcavity lasers as a function of temperature and wavelength. Optics Express. 15: 7281-9. PMID 19547051 DOI: 10.1364/Oe.15.007281 |
0.587 |
|
| 2007 |
Muller A, Flagg EB, Bianucci P, Wang XY, Deppe DG, Ma W, Zhang J, Salamo GJ, Xiao M, Shih CK. Resonance fluorescence from a coherently driven semiconductor quantum dot in a cavity. Physical Review Letters. 99: 187402. PMID 17995437 DOI: 10.1103/Physrevlett.99.187402 |
0.497 |
|
| 2007 |
Yang T, Mock A, O'Brien JD, Lipson S, Deppe DG. Edge-emitting photonic crystal double-heterostructure nanocavity lasers with InAs quantum dot active material. Optics Letters. 32: 1153-5. PMID 17410266 DOI: 10.1364/Ol.32.001153 |
0.527 |
|
| 2007 |
Deppe D. Quantum Dots for Advanced Semiconductor Lasers Frontiers in Optics. DOI: 10.1364/Fio.2007.Sthh5 |
0.53 |
|
| 2007 |
Deppe D. High-Power Quantum Dot Laser Diodes for RF Photonics Frontiers in Optics. DOI: 10.1364/Fio.2007.Fws2 |
0.553 |
|
| 2007 |
Muller A, Flagg EB, Wang XY, Shih CK, Deppe DG, Ma W, Zhang J, Salamo GJ, Xiao M. Resonance fluorescence from a semiconductor quantum dot Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. DOI: 10.1109/QELS.2007.4431637 |
0.393 |
|
| 2007 |
Deppe DG, Freisem S, Chen H, Ozgur G, Demir A, Muller A, Shin CK. Nanophotonic lasers and spontaneous light sources: Scaling trends for speed, efficiency, and quantum light generation using single quantum dots 2007 International Nano-Optelectronics Workshop, Inow. 3. DOI: 10.1109/INOW.2007.4302837 |
0.427 |
|
| 2007 |
Robb JL, Chen Y, Timmons A, Hall KC, Shchekin OB, Deppe DG. Time-resolved Faraday rotation measurements of spin relaxation in InGaAs/GaAs quantum dots: Role of excess energy Applied Physics Letters. 90. DOI: 10.1063/1.2721380 |
0.688 |
|
| 2007 |
Hall KC, Koerperick EJ, Boggess TF, Shchekin OB, Deppe DG. Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states Applied Physics Letters. 90. DOI: 10.1063/1.2437063 |
0.677 |
|
| 2006 |
Muller A, Lu D, Ahn J, Gazula D, Quadery S, Freisem S, Deppe DG, Shih CK. Self-aligned all-epitaxial microcavity for cavity QED with quantum dots. Nano Letters. 6: 2920-4. PMID 17163731 DOI: 10.1021/Nl0622909 |
0.818 |
|
| 2006 |
Muller A, Shih CK, Ahn J, Lu D, Deppe DG. Isolated single quantum dot emitters in all-epitaxial microcavities. Optics Letters. 31: 528-30. PMID 16496909 DOI: 10.1364/Ol.31.000528 |
0.746 |
|
| 2006 |
Deppe DG, Huang H. Fermi's golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in P-doped quantum-dot lasers Ieee Journal of Quantum Electronics. 42: 324-330. DOI: 10.1109/Jqe.2005.859913 |
0.515 |
|
| 2006 |
Muller A, Shin CK, Lu D, Ahn J, Gazula D, Quadery S, Freisem S, Deppe DG. Buried all-epitaxial microcavity for cavity-QED with quantum dots Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4629161 |
0.81 |
|
| 2006 |
Hendrickson J, Richards BC, Sweet J, Christenson C, Pajor M, Mosor S, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Quantum dot photonic crystal nanocavities: Transition from weak to strong coupling and nonlinear emissions Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4629159 |
0.738 |
|
| 2006 |
Yang T, Lipson S, O'Brien JD, Deppe DG. Photonic crystal double-heterostructure nanocavity InAs quantum dot laser with waveguide output coupling Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628031 |
0.463 |
|
| 2006 |
Muller A, Shih CK, Ahn J, Lu D, Gazula D, Deppe DG. High Q (33 000) all-epitaxial microcavity for quantum dot vertical-cavity surface-emitting lasers and quantum light sources Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2158519 |
0.872 |
|
| 2006 |
O'Brien J, Shih MH, Yang T, Bagheri M, Marshall WK, Dapkus PD, Deppe DG. Photonic crystal devices 2006 6th Ieee Conference On Nanotechnology, Ieee-Nano 2006. 2: 727-730. |
0.599 |
|
| 2006 |
Yang T, O'Brien JD, Lipson S, Deppe DG. Photonic crystal lasers with quantum dots active regions and their temperature dependence Optics Infobase Conference Papers. |
0.483 |
|
| 2006 |
Yang T, Lipson S, Mock A, O'Brien JD, Deppe DG. Lasing behavior of InAs quantum dot micro-cavities as a function of wavelength and temperature Optics Infobase Conference Papers. |
0.47 |
|
| 2006 |
Ahn J, Freisem S, Lu D, Gazula D, Deppe DG. Fabrication of All-Epitaxial semiconductor laser using selective interface Fermi-Level pinning Optics Infobase Conference Papers. |
0.789 |
|
| 2006 |
Yang T, O'Brien JD, Lipson S, Deppe DG. Photonic crystal lasers with quantum dots active regions and their temperature dependence Optics Infobase Conference Papers. |
0.483 |
|
| 2005 |
Hendrickson JR, Mosor S, Richards BC, Sweet J, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Scanning a Photonic Crystal Slab Nanocavity by Condensation of Xenon for Cavity QED Experiments Frontiers in Optics. DOI: 10.1364/Fio.2005.Pdp_A2 |
0.72 |
|
| 2005 |
Gobet M, Deppe DG. Quantum dot cascade heterostructure based on in-plane dipole moments for unipolar infrared cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 5792: 54-60. DOI: 10.1117/12.609709 |
0.548 |
|
| 2005 |
Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, et al. Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1737-1739. DOI: 10.1116/1.2091119 |
0.755 |
|
| 2005 |
Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, et al. Inert gas maintenance for molecular-beam epitaxy systems Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1257-1261. DOI: 10.1116/1.1878993 |
0.759 |
|
| 2005 |
Yang T, Lipson S, O'Brien JD, Deppe DG. InAs quantum dot photonic crystal lasers and their temperature dependence Ieee Photonics Technology Letters. 17: 2244-2246. DOI: 10.1109/Lpt.2005.857975 |
0.596 |
|
| 2005 |
Gazula D, Quadery S, Deppe DG. Laser diode incorporating a buried etched-void photonic pattern Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2005: 250-251. DOI: 10.1109/LEOS.2005.1547973 |
0.815 |
|
| 2005 |
Deppe DG, Ahn J, Lu D, Freisem S, Muller A, Shin CK. All-epitaxial buried heterostructure quantum dot vertical-cavity surface-emitting lasers and single quantum dot light sources Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2005: 41-42. DOI: 10.1109/LEOS.2005.1547868 |
0.652 |
|
| 2005 |
Gibbs H, Khitrova G, Hendrickson J, Yoshie T, Scherer A, Shchekin O, Deppe D. Vacuum Rabi splitting using a single quantum dot in a photonic crystal slab nanocavity Iqec, International Quantum Electronics Conference Proceedings. 2005: 1727-1728. DOI: 10.1109/IQEC.2005.1561157 |
0.709 |
|
| 2005 |
Hendrickson J, Richards BC, Sweet J, Mosor S, Christenson C, Lam D, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Quantum dot photonic-crystal-slab nanocavities: Quality factors and lasing Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.193303 |
0.77 |
|
| 2005 |
Deppe DG, Freisem S, Huang H, Lipson S. Electron transport due to inhomogeneous broadening and its potential impact on modulation speed in p-doped quantum dot lasers Journal of Physics D: Applied Physics. 38: 2119-2125. DOI: 10.1088/0022-3727/38/13/007 |
0.519 |
|
| 2005 |
Lu D, Ahn J, Freisem S, Gazula D, Deppe DG. Lens-shaped all-epitaxial quantum dot microcavity Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2099525 |
0.852 |
|
| 2005 |
Mosor S, Hendrickson J, Richards BC, Sweet J, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Scanning a photonic crystal slab nanocavity by condensation of xenon Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2076435 |
0.735 |
|
| 2005 |
Gazula D, Ahn J, Lu D, Huang H, Deppe DG. Intracavity grating-confined all-epitaxial vertical-cavity surface-emitting laser based on selective interface Fermi-level pinning Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1897049 |
0.83 |
|
| 2005 |
Gündoǧdu K, Hall KC, Koerperick EJ, Pryor CE, Flatté ME, Boggess TF, Shchekin OB, Deppe DG. Electron and hole spin dynamics in semiconductor quantum dots Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1857067 |
0.676 |
|
| 2005 |
Ahn J, Lu D, Deppe DG. All-epitaxial, lithographically defined, current- and mode-confined vertical-cavity surface-emitting laser based on selective interfacial fermi-level pinning Applied Physics Letters. 86: 021106-1-021106-3. DOI: 10.1063/1.1849417 |
0.44 |
|
| 2005 |
Gazula D, Quadery S, Deppe DG. Laser diode incorporating buried etched-void photonic pattern Electronics Letters. 41: 1223-1225. DOI: 10.1049/El:20052511 |
0.812 |
|
| 2005 |
Deppe DG, Freisem S, Lu D, Ahn J, Gazula D, Muller A, Shih CK. All-epitaxial quantum dot microcavities for VCSELs and single photon sources 2005 International Semiconductor Device Research Symposium. 2005: 54. |
0.821 |
|
| 2005 |
Hendrickson JR, Richards BC, Sweet J, Mosor S, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Strong-coupling and nonlinear emission from a quantum-dot photonic-crystal-slab nanocavity Quantum Electronics and Laser Science Conference (Qels). 1: 53-55. |
0.73 |
|
| 2005 |
Hendrickson J, Mosor S, Richards BC, Sweet J, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Scanning a photonic crystal slab nanocavity by condensation of xenon for cavity QED experiments Optics Infobase Conference Papers. |
0.621 |
|
| 2005 |
Hendrickson JR, Richards BC, Sweet J, Mosor S, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Strong-coupling and nonlinear emission from a quantum-dot photonic-crystal-slab nanocavity Quantum Electronics and Laser Science Conference (Qels). 1: 53-55. |
0.73 |
|
| 2005 |
Hendrickson J, Gibbs M, Khitrova G, Rupper G, Ell C, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Strong coupling between a single quantum dot and a photonic crystal slab nanocavity Optics Infobase Conference Papers. |
0.715 |
|
| 2004 |
Yoshie T, Scherer A, Hendrickson J, Khitrova G, Gibbs HM, Rupper G, Ell C, Shchekin OB, Deppe DG. Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity. Nature. 432: 200-3. PMID 15538363 DOI: 10.1038/Nature03119 |
0.757 |
|
| 2004 |
Gazula D, Zhang M, Deppe DG. Growth of self-assembled InAs quantum dots for InP- Based heterostructures Proceedings of Spie - the International Society For Optical Engineering. 5361: 15-20. DOI: 10.1117/12.537769 |
0.827 |
|
| 2004 |
Lu D, Chen H, Ahn J, Deppe DG. All-epitaxial apertured GaAs-based vertical cavity surface emitting laser Proceedings of Spie - the International Society For Optical Engineering. 5364: 97-100. DOI: 10.1117/12.533500 |
0.402 |
|
| 2004 |
Hall KC, Gündoǧdu K, Boggess TF, Shchekin OB, Deppe DG. Carrier and spin dynamics in charged quantum dots Proceedings of Spie - the International Society For Optical Engineering. 5361: 76-87. DOI: 10.1117/12.531620 |
0.687 |
|
| 2004 |
Yoshie T, Lončar M, Okamoto K, Qiu Y, Shchekin OB, Chen H, Deppe DG, Scherer A. Photonic crystal nanocavities with quantum well or quantum dot active material Proceedings of Spie - the International Society For Optical Engineering. 5360: 16-23. DOI: 10.1117/12.525869 |
0.746 |
|
| 2004 |
Deppe DG. III-V Nanostructures for quantum dot lasers and microcavity devices Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 4-7. DOI: 10.1109/ICIPRM.2004.1442597 |
0.519 |
|
| 2004 |
Gündoǧdu K, Hall KC, Boggess TF, Deppe DG, Shchekin OB. Ultrafast electron capture into p-modulation-doped quantum dots Applied Physics Letters. 85: 4570-4572. DOI: 10.1063/1.1815371 |
0.76 |
|
| 2004 |
Lu D, Ahn J, Huang H, Deppe DG. All-epitaxial mode-confined vertical-cavity surface-emitting laser Applied Physics Letters. 85: 2169-2171. DOI: 10.1063/1.1795982 |
0.458 |
|
| 2004 |
Cao C, Deppe DG. Impact of spin blocking on the energy relaxation of electrons in quantum-dot lasers Applied Physics Letters. 84: 2736-2738. DOI: 10.1063/1.1705729 |
0.442 |
|
| 2004 |
Gündoǧdu K, Hall KC, Boggess TF, Deppe DG, Shchekin OB. Efficient electron spin detection with positively charged quantum dots Applied Physics Letters. 84: 2793-2795. DOI: 10.1063/1.1695637 |
0.715 |
|
| 2004 |
Lu D, Ahn J, Deppe DG. All-epitaxial current- And mode-confined AlGaAs GaAs VCSEL Electronics Letters. 40: 1336-1337. DOI: 10.1049/El:20046159 |
0.439 |
|
| 2004 |
Lu D, Ahn J, Deppe DG. All-epitaxial current- and mode-confined AlGaAs/GaAs vertical-cavity surface-emitting laser Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 246-247. |
0.361 |
|
| 2004 |
Yoshie T, Shchekin OB, Chen H, Deppe DG, Schere A. Planar Photonic Crystal Nanolasers (II): Low-threshold Quantum Dot Lasers Ieice Transactions On Electronics. 300-307. |
0.769 |
|
| 2004 |
Yoshie T, Scherer A, Shchekin OB, Chen H, Deppe DG. High spontaneous emission coupling factor in photonic crystal nanolasers Osa Trends in Optics and Photonics Series. 97: 919. |
0.705 |
|
| 2003 |
Deppe DG, Shchekin OB, Huang H. High to quantum dot lasers based on charge-controlled active regions Frontiers in Optics. DOI: 10.1364/Fio.2003.Thm1 |
0.776 |
|
| 2003 |
Deppe D. Quantum dot microcavity and laser devices Frontiers in Optics. DOI: 10.1364/Fio.2003.Thaa5 |
0.579 |
|
| 2003 |
Yoshie T, Schchekin OB, Chen H, Deppe DG, Scherer A. Design and characterization of quantum dot photonic crystal lasers Proceedings of Spie - the International Society For Optical Engineering. 5000: 27-34. DOI: 10.1117/12.479515 |
0.474 |
|
| 2003 |
Deppe DG, Shchekin OB, Mo Q, Chen H, Huang Z. Novel semiconductor lasers based on quantum dots 2003 Ieee/Leos International Conference On Optical Mems. 167-168. DOI: 10.1109/OMEMS.2003.1233518 |
0.77 |
|
| 2003 |
Scherer A, Yoshie T, Loncar M, Vuckovic J, Deppe D, Okamoto K. 2-D photonic crystal microcavities Leos Summer Topical Meeting. 2003: 47. DOI: 10.1109/LEOSST.2003.1224269 |
0.416 |
|
| 2003 |
Belyanin AA, Deppe D, Kocharovskii VV, Kocharovskii VV, Pestov DS, Sculli MO. New semiconductor laser designs and the exploratory investigation of the terahertz frequency range Physics-Uspekhi. 46: 986-992. DOI: 10.1070/Pu2003V046N09Abeh001646 |
0.378 |
|
| 2003 |
Yang T, Shchekin O, O'Brien JD, Deppe DG. Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions Electronics Letters. 39: 1657-1658. DOI: 10.1049/el:20031058 |
0.737 |
|
| 2003 |
Mo Q, Chen H, Huang Z, Shchekin OB, Cao C, Lipson S, Deppe DG. Room-temperature continuous-wave operation of GaAs-based vertical cavity surface emitting laser based on p-type GaAs/air mirror Electronics Letters. 39: 525-526. DOI: 10.1049/El:20030309 |
0.785 |
|
| 2003 |
Deppe DG, Huang H. Quantum Dot Lasers Advanced Semiconductor and Organic Nano-Techniques. 367-410. DOI: 10.1016/B978-012507060-7/50012-X |
0.541 |
|
| 2003 |
Deppe DG, Shchekin OB, Ahn J, Cao C, Gundogdu K, Hall K, Zhang L, Boggess T. Modulation characteristics of P-doped quantum dot lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 116-117. |
0.754 |
|
| 2003 |
Shchekin OB, Huang H, Deppe DG. 1.3-micron high to quantum dot lasers based on charge-controlled active regions Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 80-84. |
0.761 |
|
| 2003 |
Chen H, Mo Q, Huang Z, Shchekin OB, Cao C, Lipson S, Deppe DG. Room-temperature CW operation of 980nm air-gap VCSELs Osa Trends in Optics and Photonics Series. 88: 1142-1144. |
0.658 |
|
| 2002 |
Shchekin OB, Deppe DG. Low-threshold high-T0 1.3-μm InAs quantum-dot lasers due to p-type modulation doping of the active region Ieee Photonics Technology Letters. 14: 1231-1233. DOI: 10.1109/LPT.2002.801597 |
0.744 |
|
| 2002 |
Deppe DG, Huang H, Shchekin OB. Modulation characteristics of quantum-dot lasers: The influence of p-type doping and the electronic density of states on obtaining high speed Ieee Journal of Quantum Electronics. 38: 1587-1593. DOI: 10.1109/Jqe.2002.805246 |
0.765 |
|
| 2002 |
Deppe DG, Shchekin OB. Quantum dot lasers: Temperature insensitive operation and the prospect for high speed modulation Device Research Conference - Conference Digest, Drc. 2002: 135-136. DOI: 10.1109/DRC.2002.1029553 |
0.763 |
|
| 2002 |
Shchekin OB, Deppe DG. 1.3 μm InAs quantum dot laser with T o=161K from 0 to 80°C Applied Physics Letters. 80: 3277-3279. DOI: 10.1063/1.1476708 |
0.74 |
|
| 2002 |
Shchekin OB, Deppe DG. The role of p-type doping and the density of states on the modulation response of quantum dot lasers Applied Physics Letters. 80: 2758-2760. DOI: 10.1063/1.1469212 |
0.748 |
|
| 2002 |
Chen H, Zou Z, Cao C, Deppe DG. High differential efficiency (>16%) quantum dot microcavity light emitting diode Applied Physics Letters. 80: 350-352. DOI: 10.1063/1.1434310 |
0.532 |
|
| 2002 |
Yoshie T, Shchekin OB, Chen H, Deppe DG, Scherer A. Quantum dot photonic crystal lasers Electronics Letters. 38: 967-968. DOI: 10.1049/El:20020650 |
0.755 |
|
| 2002 |
Shchekin OB, Ahn J, Deppe DG. High temperature performance of self-organised quantum dot laser with stacked p-doped active region Electronics Letters. 38: 712-713. DOI: 10.1049/el:20020509 |
0.763 |
|
| 2001 |
Brick P, Ell C, Hübner M, Lee ES, Lyngnes O, Prineas JP, Khitrova G, Gibbs HM, Kira M, Johnke F, Koch SW, Deppe DG, Huffaker DL. Quantum correlations in a semiconductor microcavity Technical Digest - Summaries of Papers Presented At the Quantum Electronics and Laser Science Conference, Qels 2001. 232. DOI: 10.1109/QELS.2001.962146 |
0.621 |
|
| 2001 |
Qasaimeh O, Zhou W, Bhattacharya P, Huffaker D, Deppe DG. Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications Journal of Lightwave Technology. 19: 546-552. DOI: 10.1109/50.920853 |
0.546 |
|
| 2001 |
Huang H, Deppe DG. Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser Ieee Journal of Quantum Electronics. 37: 691-698. DOI: 10.1109/3.918583 |
0.43 |
|
| 2001 |
Yoshie T, Vučković J, Scherer A, Chen H, Deppe D. High quality two-dimensional photonic crystal slab cavities Applied Physics Letters. 79: 4289-4291. DOI: 10.1063/1.1427748 |
0.411 |
|
| 2001 |
Zhang L, Boggess TF, Gundogdu K, Flatté ME, Deppe DG, Cao C, Shchekin OB. Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots Applied Physics Letters. 79: 3320-3322. DOI: 10.1063/1.1418035 |
0.671 |
|
| 2001 |
Yoshie T, Scherer A, Chen H, Huffaker D, Deppe D. Optical characterization of two-dimensional photonic crystal cavities with indium arsenide quantum dot emitters Applied Physics Letters. 79: 114-116. DOI: 10.1063/1.1377851 |
0.656 |
|
| 2001 |
Shchekin OB, Deppe DG, Lu D. Fermi-level effect on the interdiffusion of InAs and InGaAs quantum dots Applied Physics Letters. 78: 3115-3117. DOI: 10.1063/1.1372362 |
0.773 |
|
| 2001 |
Zou Z, Chen H, Deppe DG. Apertured quantum dot microcavity light emitting diodes Applied Physics Letters. 78: 3067-3069. DOI: 10.1063/1.1341223 |
0.485 |
|
| 2001 |
Boggess TF, Zhang L, Deppe DG, Huffaker DL, Cao C. Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots Applied Physics Letters. 78: 276-278. DOI: 10.1063/1.1337638 |
0.654 |
|
| 2001 |
Lee ES, Ell C, Brick P, Spiegelberg C, Gibbs HM, Khitrova G, Deppe DG, Huffaker DL. Saturation of normal-mode coupling in aluminum-oxide-aperture semiconductor nanocavities Journal of Applied Physics. 89: 807-809. DOI: 10.1063/1.1330758 |
0.559 |
|
| 2001 |
Deppe DG, Shchekin O, Park G, Boggess TF, Zhang L. Carrier dynamics, laser characteristics, and microcavity effects based on InAs and InGaAs quantum dot light emitters Journal of the Korean Physical Society. 39: S398-S401. |
0.49 |
|
| 2001 |
Deppe DG, Chen H, Zou Z, Shchekin OB, Cao C, Boggess T, Zhang L. Long-wavelength quantum dots: Carrier dynamics and applications to lasers and light emitting diodes Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 265-266. |
0.733 |
|
| 2001 |
Zhang L, Boggess TF, Gundogdu K, Flatté ME, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Ultrafast carrier dynamics in size-controlled, self-assembled, InGaAs/GaAs quantum dots Conference On Lasers and Electro-Optics Europe - Technical Digest. 357-358. |
0.693 |
|
| 2001 |
Deppe DG, Cao C, Shchekin OB, Zou Z, Chen H, Boggess TF, Zhang L, Gundogdu K. Carrier dynamics in quantum dots and their application to lasers and microcavity light emitters Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 79-82. |
0.75 |
|
| 2000 |
Ell C, Brick P, Hübner M, Lee ES, Lyngnes O, Prineas JP, Khitrova G, Gibbs HM, Kira M, Jahnke F, Koch SW, Deppe DG, Huffaker DL. Quantum correlations in the nonperturbative regime of semiconductor microcavities. Physical Review Letters. 85: 5392-5. PMID 11136004 DOI: 10.1103/Physrevlett.85.5392 |
0.643 |
|
| 2000 |
Deppe DG, Park G, Shchekin OB. Temperature dependence of quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 4078: 90-99. DOI: 10.1117/12.392129 |
0.832 |
|
| 2000 |
Coleman J, Deppe D, Bimberg D, Arakawa Y. Introduction to the issue on nanostructures and quantum dots Ieee Journal of Selected Topics in Quantum Electronics. 6: 405-407. DOI: 10.1109/Jstqe.2000.865095 |
0.609 |
|
| 2000 |
Qasaimeh O, Zhou W, Bhattacharya P, Huffaker D, Deppe D. Monolithically integrated low-power phototransceiver incorporating microcavity LEDs and multiquantum-well phototransistors Ieee Photonics Technology Letters. 12: 1683-1685. DOI: 10.1109/68.896348 |
0.508 |
|
| 2000 |
Shchekin OB, Park G, Huffaker DL, Mo Q, Deppe DG. Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity Ieee Photonics Technology Letters. 12: 1120-1122. DOI: 10.1109/68.874208 |
0.856 |
|
| 2000 |
Park G, Shchekin OB, Huffaker DL, Deppe DG. Low-threshold oxide-confined 1.3-μm quantum-dot laser Ieee Photonics Technology Letters. 12: 230-232. DOI: 10.1109/68.826897 |
0.833 |
|
| 2000 |
Zou Z, Huffaker DL, Deppe DG. Ultralow-threshold cryogenic vertical-cavity surface-emitting laser Ieee Photonics Technology Letters. 12: 1-3. DOI: 10.1109/68.817427 |
0.367 |
|
| 2000 |
Park G, Shchekin OB, Deppe DG. Temperature dependence of gain saturation in multilevel quantum dot lasers Ieee Journal of Quantum Electronics. 36: 1065-1071. DOI: 10.1109/3.863959 |
0.817 |
|
| 2000 |
Huang H, Deppe DG. Obtaining high efficiency at low power using a quantum-dot microcavity light-emitting diode Ieee Journal of Quantum Electronics. 36: 674-679. DOI: 10.1109/3.845722 |
0.408 |
|
| 2000 |
Huffaker DL, Park G, Zhengzhong Z, Shchekin OB, Deppe DG. Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAs quantum-dot lasers Ieee Journal On Selected Topics in Quantum Electronics. 6: 452-461. DOI: 10.1109/2944.865100 |
0.813 |
|
| 2000 |
Ell C, Brick P, Hübner M, Lee ES, Lyngnes O, Prineas JP, Khitrova G, Gibbs HM, Kira M, Jahnke F, Koch SW, Deppe DG, Huffaker DL. Quantum correlations in the nonperturbative regime of semiconductor microcavities Physical Review Letters. 85: 5392-5395. DOI: 10.1103/PhysRevLett.85.5392 |
0.623 |
|
| 2000 |
Deppe DG, Huffaker DL. Quantum dimensionality, entropy, and the modulation response of quantum dot lasers Applied Physics Letters. 77: 3325-3327. DOI: 10.1063/1.1328090 |
0.666 |
|
| 2000 |
Shchekin OB, Park G, Huffaker DL, Deppe DG. Discrete energy level separation and the threshold temperature dependence of quantum dot lasers Applied Physics Letters. 77: 466-468. DOI: 10.1063/1.127012 |
0.829 |
|
| 2000 |
Zhang L, Boggess TF, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots Applied Physics Letters. 76: 1222-1224. DOI: 10.1063/1.125991 |
0.791 |
|
| 2000 |
Qasaimeh O, Zhou WD, Bhattacharya P, Huffaker D, Deppe DG. Monolithically integrated low-power phototransceiver incorporating InGaAs/GaAs quantum-dot microcavity LED and modulated barrier photodiode Electronics Letters. 36: 1955-1957. DOI: 10.1049/El:20001352 |
0.569 |
|
| 2000 |
Chen H, Zou Z, Shchekin OB, Deppe DG. InAs quantum-dot lasers operating near 1.3 μm with high characteristic temperature for continuous-wave operation Electronics Letters. 36: 1703-1704. DOI: 10.1049/El:20001224 |
0.771 |
|
| 2000 |
Park G, Shchekin OB, Huffaker DL, Deppe DG. InGaAs quantum dot lasers with sub-milliamp thresholds and ultra-low threshold current density below room temperature Electronics Letters. 36: 1283-1284. DOI: 10.1049/El:20000909 |
0.804 |
|
| 2000 |
Park G, Shchekin OB, Huffaker DL, Deppe DG. Very low threshold oxide-confined 1.3 μm GaAs-based quantum dot laser Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 349-350. |
0.752 |
|
| 2000 |
Deppe DG, Huffaker DL, Huang H, Boggess TF, Zhang L. Wetting layer entropy effect on the modulation response of self-organized quantum dot lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 306-307. |
0.489 |
|
| 2000 |
Boggess TF, Zhang L, Flatte ME, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Energy relaxation and recombination in 1.3-micron-wavelength, self-assembled, InGaAs/GaAs quantum dots Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 366-367. |
0.719 |
|
| 2000 |
Deppe DG, Huffaker DL. Quantum dimensionality, entropy, and the modulation response of quantum dot lasers Applied Physics Letters. 77: 3325-3327. |
0.501 |
|
| 2000 |
Shchekin OB, Park G, Huffaker DL, Deppe DG. Discrete energy level separation and the threshold temperature dependence of quantum dot lasers Applied Physics Letters. 77: 466-468. |
0.737 |
|
| 2000 |
Zhang L, Boggess TF, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots Applied Physics Letters. 76: 1222-1224. |
0.724 |
|
| 2000 |
Yoshie T, Painter O, Scherer A, Huffaker D, Deppe D. Photonic crystal defect microcavities with indium arsenide quantum dots Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 415-416. |
0.403 |
|
| 1999 |
Deppe DG, Huffaker DL, Graham LA, Zou Z, Csutak S. Selective Oxidation to Form Dielectric Apertures for Low Threshold VCSELs and Microcavity Spontaneous Light Emitters Mrs Proceedings. 573. DOI: 10.1557/Proc-573-81 |
0.712 |
|
| 1999 |
Huffaker DL, Deppe DG. Intracavity contacts for low-threshold oxide-confined vertical-cavity surface-emitting lasers Ieee Photonics Technology Letters. 11: 934-936. DOI: 10.1109/68.775304 |
0.37 |
|
| 1999 |
Park G, Huffaker DL, Zou Z, Shchekin OB, Deppe DG. Temperature Dependence of Lasing Characteristics for Long-Wavelength (1.3-μm) GaAs-Based Quantum-Dot Lasers Ieee Photonics Technology Letters. 11: 301-303. DOI: 10.1109/68.748215 |
0.837 |
|
| 1999 |
Deppe DG, Graham LA, Huffaker DL. Enhanced spontaneous emission using quantum dots and an apertured microcavity Ieee Journal of Quantum Electronics. 35: 1502-1508. DOI: 10.1109/3.792581 |
0.651 |
|
| 1999 |
Deppe DG, Huffaker DL, Csutak S, Zou Z, Park G, Shchekin OB. Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers Ieee Journal of Quantum Electronics. 35: 1238-1246. DOI: 10.1109/3.777226 |
0.849 |
|
| 1999 |
Huffaker D, Deppe D. A quantum leap in laser emission Ieee Circuits and Devices Magazine. 15: 8-13. DOI: 10.1109/101.768521 |
0.669 |
|
| 1999 |
Graham LA, Huffaker DL, Csutak SM, Deng Q, Deppe DG. Spontaneous lifetime control of quantum dot emitters in apertured microcavities Journal of Applied Physics. 85: 3383-3385. DOI: 10.1063/1.369688 |
0.643 |
|
| 1999 |
Park G, Shchekin OB, Csutak S, Huffaker DL, Deppe DG. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser Applied Physics Letters. 75: 3267-3269. DOI: 10.1063/1.125320 |
0.828 |
|
| 1999 |
Zou Z, Huffaker DL, Csutak S, Deppe DG. Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser Applied Physics Letters. 75: 22-24. DOI: 10.1063/1.124264 |
0.711 |
|
| 1999 |
Graham LA, Huffaker DL, Deppe DG. Spontaneous lifetime control in a native-oxide-apertured microcavity Applied Physics Letters. 74: 2408-2410. DOI: 10.1063/1.123863 |
0.611 |
|
| 1999 |
Huffaker DL, Zou ZZ, Park G, Shchekin OB, Deppe DG. Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 µm) GaAs-based quantum dot lasers Journal of Electronic Materials. 28: 532-536. DOI: 10.1007/S11664-999-0107-X |
0.813 |
|
| 1999 |
Deppe DG, Huang H, Graham LA, Huffaker DL. Purcell effect and the bias-free pulse response of vertical-cavity surface-emitting lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 560-561. |
0.459 |
|
| 1999 |
Huffaker DL, Zou Z, Deppe DG. Reduced cavity loss for ultra-low threshold vertical cavity surface emitting lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 391-392. |
0.433 |
|
| 1999 |
Deppe DG, Huffaker DL, Huang H, Graham LA. Oxide-confined vertical-cavity surface-emitting lasers, quantum dots, and the Purcell effect: Can scaling the mode size improve laser performance? Proceedings of Spie - the International Society For Optical Engineering. 3897: 12-21. |
0.408 |
|
| 1999 |
Huffaker DL, Park G, Zou Z, Shchekin OB, Deppe DG. Quantum dot active regions for extended wavelength (1.0 μm to 1.3 μm) GaAs-based heterostructure lasers and vertical cavity surface emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 3899: 134-146. |
0.781 |
|
| 1999 |
Shchekin OB, Park G, Huffaker DL, Deppe DG. 1.3 μm quantum dot lasers with single and stacked active layers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 465-466. |
0.767 |
|
| 1999 |
Deppe DG, Huang H. Quantum-dot vertical-cavity surface-emitting laser based on the Purcell effect Applied Physics Letters. 75: 3455-3457. |
0.502 |
|
| 1999 |
Park G, Shchekin OB, Csutak S, Huffaker DL, Deppe DG. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser Applied Physics Letters. 75: 3267-3269. |
0.735 |
|
| 1999 |
Zou Z, Huffaker DL, Csutak S, Deppe DG. Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser Applied Physics Letters. 75: 22-24. |
0.484 |
|
| 1999 |
Huffaker DL, Zou ZZ, Park G, Shchekin OB, Deppe DG. Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 μm) GaAs-based quantum dot lasers Journal of Electronic Materials. 28: 532-536. |
0.713 |
|
| 1999 |
Graham LA, Huffaker DL, Deppe DG. Spontaneous lifetime control in a native-oxide-apertured microcavity Applied Physics Letters. 74: 2408-2410. |
0.332 |
|
| 1999 |
Graham LA, Huffaker DL, Csutak SM, Deng Q, Deppe DG. Spontaneous lifetime control of quantum dot emitters in apertured microcavities Journal of Applied Physics. 85: 3383-3385. |
0.387 |
|
| 1999 |
Zou Z, Huffaker DL, Csutak S, Shchekin OB, Graham LA, Deppe DG. Ground state lasing at 1.07 μm from InGaAs/GaAs QD VCSEL Leos Summer Topical Meeting. 81-82. |
0.749 |
|
| 1999 |
Huffaker DL, Shchekin O, Park G, Zou ZZ, Csutak S, Deppe DG. InGaAs/GaAs QDs for extended wavelength GaAs-based edge-emitters and VCSELs Leos Summer Topical Meeting. 17-18. |
0.387 |
|
| 1999 |
Deppe DG, Huffaker DL, Graham LA, Zou Z, Csutak S. Selective oxidation to form dielectric apertures for low threshold VCSELs and microcavity spontaneous light emitters Materials Research Society Symposium - Proceedings. 573: 81-92. |
0.505 |
|
| 1999 |
Huffaker DL, Shchekin O, Park G, Zou ZZ, Deppe DG. Temperature dependence of lasing characteristics for 1.3 μm GaAs-based quantum dot lasers Iqec, International Quantum Electronics Conference Proceedings. 253-254. |
0.475 |
|
| 1999 |
Gibbs HM, Khitrova G, Lee ES, Park S, Ell C, Deppe DG, Huffaker DL. Toward quantum entanglement in a quantum-dot nanocavity Leos Summer Topical Meeting. 41-42. |
0.452 |
|
| 1998 |
Deppe DG, Huffaker DL. Quantum Well and Quantum Dot Light Emitters Confined in Oxide-Semiconductor Microcavities Optics and Photonics News. 9: 30. DOI: 10.1364/Opn.9.1.000030 |
0.69 |
|
| 1998 |
Deng Q, Deppe DG. Spontaneous lifetime in a dielectrically-apertured Fabry-Perot microcavity Optics Express. 2: 157-162. DOI: 10.1364/Oe.2.000157 |
0.309 |
|
| 1998 |
Klein B, Register LF, Hess K, Deppe D. Theory and Modeling of Lasing Modes in Vertical Cavity Surface Emitting Lasers Vlsi Design. 8: 87-91. DOI: 10.1155/1998/81752 |
0.436 |
|
| 1998 |
DEPPE DG, HUFFAKER DL. EXTENDED WAVELENGTH (1.0 to 1.3 μm) InGaAs/GaAs QUANTUM DOT GaAs-BASED VERTICAL-CAVITY SURFACE-EMITTING AND LATERAL-CAVITY EDGE-EMITTING LASERS International Journal of High Speed Electronics and Systems. 9: 979-1005. DOI: 10.1142/S0129156498000403 |
0.707 |
|
| 1998 |
Huffaker DL, Schaub JD, Deng H, Deppe DG. Quantum dot active regions for extended wavelength range GaAs-based light emitting devices Proceedings of Spie - the International Society For Optical Engineering. 3283: 144-151. DOI: 10.1117/12.316678 |
0.703 |
|
| 1998 |
Deng Q, Deppe DG. Cavity length effect on lasing mode of a dielectrically apertured Fabry-Perot microcavity Proceedings of Spie - the International Society For Optical Engineering. 3283: 262-268. DOI: 10.1117/12.316675 |
0.412 |
|
| 1998 |
Campbell JC, Bean JC, Deppe DG, Huffaker DL, Streetman BG. Resonant-cavity photodetectors: Performance and functionality Proceedings of Spie - the International Society For Optical Engineering. 3290: 34-40. DOI: 10.1117/12.298260 |
0.582 |
|
| 1998 |
Zou Z, Shchekin OB, Park G, Huffaker DL, Deppe DG. Threshold temperature dependence of lateral-cavity quantum-dot lasers Ieee Photonics Technology Letters. 10: 1673-1675. DOI: 10.1109/68.730465 |
0.846 |
|
| 1998 |
Oh TH, Shchekin OB, Deppe DG. Single-mode operation in an antiguided vertical-cavity surface-emitting laser using a low-temperature grown AlGaAs dielectric aperture Ieee Photonics Technology Letters. 10: 1064-1066. DOI: 10.1109/68.701503 |
0.692 |
|
| 1998 |
Deppe DG, Kudari A, Huffaker DL, Deng H, Deng Q, Campbell JC. Mode coupling in a narrow spectral bandwidth quantum-dot microcavity photodetector Ieee Photonics Technology Letters. 10: 252-254. DOI: 10.1109/68.655375 |
0.741 |
|
| 1998 |
Huffaker DL, Deng H, Deppe DG. 1.15-μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser Ieee Photonics Technology Letters. 10: 185-187. DOI: 10.1109/68.655352 |
0.537 |
|
| 1998 |
Oh TH, McDaniel MR, Huffaker DL, Deppe DG. Cavity-induced antiguiding in a selectively oxidized vertical-cavity surface-emitting laser Ieee Photonics Technology Letters. 10: 12-14. DOI: 10.1109/68.651084 |
0.599 |
|
| 1998 |
Deppe DG, Deng Q. Tunneling transport and diffusion in weakly coupled quantum dot ensembles Applied Physics Letters. 73: 3536-3538. DOI: 10.1063/1.122799 |
0.387 |
|
| 1998 |
Park G, Shchekin OB, Huffaker DL, Deppe DG. Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels Applied Physics Letters. 73: 3351-3353. DOI: 10.1063/1.122766 |
0.834 |
|
| 1998 |
Klein B, Register LF, Hess K, Deppe DG, Deng Q. Self-consistent Green's function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers Applied Physics Letters. 73: 3324-3326. DOI: 10.1063/1.122710 |
0.415 |
|
| 1998 |
Huffaker DL, Park G, Zou Z, Shchekin OB, Deppe DG. 1.3 μm room-temperature GaAs-based quantum-dot laser Applied Physics Letters. 73: 2564-2566. DOI: 10.1063/1.122534 |
0.826 |
|
| 1998 |
Huffaker DL, Deppe DG. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots Applied Physics Letters. 73: 520-522. DOI: 10.1063/1.121920 |
0.69 |
|
| 1998 |
Huffaker DL, Deppe DG. Electron and hole tunneling in a moderate density quantum dot ensemble with shallow confinement potentials Applied Physics Letters. 73: 366-368. DOI: 10.1063/1.121836 |
0.572 |
|
| 1998 |
Oh TH, McDaniel MR, Huffaker DL, Deppe DG. Guiding and antiguiding effects in epitaxially regrown vertical-cavity surface-emitting lasers Applied Physics Letters. 72: 2782-2784. DOI: 10.1063/1.121458 |
0.635 |
|
| 1998 |
Graham LA, Huffaker DL, Deng Q, Deppe DG. Controlled spontaneous lifetime in microcavity confined InGaAlAs/GaAs quantum dots Applied Physics Letters. 72: 1670-1672. DOI: 10.1063/1.121148 |
0.685 |
|
| 1998 |
Huffaker DL, Graham LA, Deppe DG. Ultranarrow electroluminescence spectrum from the ground state of an ensemble of self-organized quantum dots Applied Physics Letters. 72: 214-216. DOI: 10.1063/1.120689 |
0.615 |
|
| 1998 |
Huffaker DL, Park G, Shchekin O, Zhou ZZ, Deppe DG. InGaAs/GaAs quantum dot lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 109-110. |
0.773 |
|
| 1998 |
Deppe DG, Huffaker DL, Oh TH, Zhou ZZ. Dielectric apertures for mode control in low threshold and single mode vertical-cavity surface-emitting lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 176. |
0.333 |
|
| 1998 |
Deppe DG, Huffaker DL. Quantum well and quantum dot light emitters confined in oxide-semiconductor microcavities Optics and Photonics News. 9: 30-33. |
0.456 |
|
| 1998 |
Huffaker DL, Graham LA, Deppe DG. Carrier confinement in InGa(Al)As tunnel-coupled quantum dot light emitters based on ultrasmall apertures Conference On Lasers and Electro-Optics Europe - Technical Digest. 466-467. |
0.438 |
|
| 1997 |
Qian Y, Zhu ZH, Lo YH, Huffaker DL, Deppe DG, Hou HQ, Hammons BE, Lin W, Tu YK. Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors Ieee Photonics Technology Letters. 9: 866-868. DOI: 10.1109/68.593326 |
0.651 |
|
| 1997 |
Deppe DG, Huffaker DL, Oh T, Deng H, Deng Q. Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors Ieee Journal of Selected Topics in Quantum Electronics. 3: 893-904. DOI: 10.1109/2944.640643 |
0.625 |
|
| 1997 |
Baklenov O, Huffaker DL, Anselm A, Deppe DG, Streetman BG. Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy Journal of Applied Physics. 82: 6362-6364. DOI: 10.1063/1.366530 |
0.626 |
|
| 1997 |
Huffaker DL, Deppe DG. Improved performance of oxide-confined vertical-cavity surface-emitting lasers using a tunnel injection active region Applied Physics Letters. 71: 1449-1451. DOI: 10.1063/1.119933 |
0.55 |
|
| 1997 |
Qian Y, Zhu ZH, Lo YH, Huffaker DL, Deppe DG, Hou HQ, Hammons BE, Lin W, Tu YK. Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region Applied Physics Letters. 71: 25-27. DOI: 10.1063/1.119459 |
0.658 |
|
| 1997 |
Huffaker DL, Baklenov O, Graham LA, Streetman BG, Deppe DG. Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture Applied Physics Letters. 70: 2356-2358. DOI: 10.1063/1.118872 |
0.737 |
|
| 1997 |
Huffaker DL, Deppe DG. Low threshold vertical-cavity surface-emitting lasers based on high contrast distributed Bragg reflectors Applied Physics Letters. 70: 1781-1783. DOI: 10.1063/1.118689 |
0.563 |
|
| 1997 |
Deng H, Deng Q, Deppe DG. Very small oxide-confined vertical-cavity surface-emitting lasers with a bulk active region Applied Physics Letters. 70: 741-743. DOI: 10.1063/1.118266 |
0.448 |
|
| 1997 |
Graham LA, Deng Q, Deppe DG, Huffaker DL. Exciton spectral splitting near room temperature from high contrast semiconductor microcavities Applied Physics Letters. 70: 814-816. DOI: 10.1063/1.118231 |
0.654 |
|
| 1997 |
McDaniel M, Huffaker D, Deppe D. Hybrid dielectric/metal reflector for low threshold vertical-cavity surface-emitting lasers Electronics Letters. 33: 1704. DOI: 10.1049/El:19971157 |
0.604 |
|
| 1997 |
Campbell J, Huffaker D, Deng H, Deppe D. Quantum dot resonant cavity photodiode with operation near 1.3 [micro sign]m wavelength Electronics Letters. 33: 1337. DOI: 10.1049/El:19970906 |
0.749 |
|
| 1997 |
Qian Y, Zhu Z, Lo Y, Huffaker D, Deppe D, Hou H, Hammons B, Lin W, Tu Y. Submilliamp 1.3 [micro sign]m vertical-cavity surface-emitting lasers with threshold current density of < 500 A/cm2 Electronics Letters. 33: 1052. DOI: 10.1049/el:19970679 |
0.301 |
|
| 1997 |
Deppe D, Huffaker D. High spatial coherence vertical-cavity surface-emitting laser using a long monolithic cavity Electronics Letters. 33: 211. DOI: 10.1049/El:19970129 |
0.574 |
|
| 1997 |
Baklenov O, Huffaker DL, Anselm A, Deppe DG, Streetman BG. Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy Journal of Applied Physics. 82: 6362-6364. |
0.359 |
|
| 1997 |
Deppe DG, Huffaker DL, Deng Q, Oh TH, Graham LA. Oxide-confined VCSELs with quantum well and quantum dot active regions Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 287-288. |
0.46 |
|
| 1996 |
Huffaker DL, Graham LA, Deng H, Deppe DG. Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors Ieee Photonics Technology Letters. 8: 974-976. DOI: 10.1109/68.508708 |
0.626 |
|
| 1996 |
Huffaker DL, Graham LA, Deppe DG. Fabrication of high-packing-density vertical cavity surface-emitting laser arrays using selective oxidation Ieee Photonics Technology Letters. 8: 596-598. DOI: 10.1109/68.491550 |
0.615 |
|
| 1996 |
Huffaker DL, Deng H, Deng Q, Deppe DG. Ring and stripe oxide‐confined vertical‐cavity surface‐emitting lasers Applied Physics Letters. 69: 3477-3479. DOI: 10.1063/1.117257 |
0.519 |
|
| 1996 |
Deng H, Deng Q, Deppe DG. Native‐oxide laterally confined whispering‐gallery mode laser with vertical emission Applied Physics Letters. 69: 3120-3122. DOI: 10.1063/1.116801 |
0.395 |
|
| 1996 |
Oh T, Huffaker D, Graham L, Deng H, Deppe D. Steam oxidation of GaAs Electronics Letters. 32: 2024. DOI: 10.1049/El:19961315 |
0.51 |
|
| 1996 |
Deng H, Deppe D. Oxide-confined vertical-cavity laser with additional etched void confinement Electronics Letters. 32: 900. DOI: 10.1049/el:19960579 |
0.343 |
|
| 1995 |
Rogers TJ, Huffaker DL, Deng H, Deng Q, Deppe DG. Influence of Cavity Tuning on the Transverse Mode in Vertical-Cavity Lasers Ieee Photonics Technology Letters. 7: 238-240. DOI: 10.1109/68.372732 |
0.612 |
|
| 1995 |
Lin C, Deppe D. Self-consistent calculation of lasing modes in a planar microcavity Journal of Lightwave Technology. 13: 575-580. DOI: 10.1109/50.372468 |
0.38 |
|
| 1995 |
Deng H, Lin CC, Huffaker DL, Deng Q, Deppe DG, Rogers TJ. Temperature dependence of the transverse lasing mode in vertical-cavity lasers Journal of Applied Physics. 77: 2279-2286. DOI: 10.1063/1.358816 |
0.628 |
|
| 1995 |
Huffaker DL, Deppe DG, Shin J. Threshold characteristics of planar and index‐guided microcavity lasers Applied Physics Letters. 67: 4-6. DOI: 10.1063/1.115489 |
0.331 |
|
| 1995 |
Huffaker DL, Deppe DG. Spontaneous coupling to planar and index‐confined quasimodes of Fabry–Pérot microcavities Applied Physics Letters. 67: 2594-2596. DOI: 10.1063/1.115142 |
0.401 |
|
| 1995 |
Deng H, Deppe DG, Shin J. Dependence of mode size and temporal response on the mirror contrast ratio in microcavity lasers Applied Physics Letters. 67: 3526-3528. DOI: 10.1063/1.114910 |
0.422 |
|
| 1995 |
Huffaker DL, Shin J, Deppe DG. Lasing characteristics of low threshold microcavity lasers using half‐wave spacer layers and lateral index confinement Applied Physics Letters. 66: 1723-1725. DOI: 10.1063/1.113346 |
0.336 |
|
| 1995 |
Deng H, Deppe D, Shin J, Huffaker D. Gain switching in a vertical-cavity laser with high-contrast mirrors Electronics Letters. 31: 278-279. DOI: 10.1049/el:19950199 |
0.329 |
|
| 1994 |
Hansing C, Deng H, Reifsnider J, Deppe D, Streetman B. MBE Regrowth Over a Selectively Undercut GaAs Masking Layer Mrs Proceedings. 340. DOI: 10.1557/Proc-340-65 |
0.388 |
|
| 1994 |
Hansing CC, Deng H, Huffaker DL, Deppe DG, Streetman BG, Sarathy J. Low-threshold continuous-wave surface emitting lasers with etched void confinement Ieee Photonics Technology Letters. 6: 320-322. DOI: 10.1109/68.275477 |
0.612 |
|
| 1994 |
Huffaker DL, Lin CC, Deppe DG, Streetman BG, Rogers TJ. Mode Dependence on Mirror Contrast in Fabry-Perot Microcavity Lasers Ieee Photonics Technology Letters. 6: 135-138. DOI: 10.1109/68.275408 |
0.6 |
|
| 1994 |
Lin C, Deppe D, Lei C. Role of waveguide light emission in planar microcavities Ieee Journal of Quantum Electronics. 30: 2304-2313. DOI: 10.1109/3.328594 |
0.348 |
|
| 1994 |
Deppe D, Lei C, Lin C, Huffaker D. Spontaneous Emission from Planar Microstructures Journal of Modern Optics. 41: 325-344. DOI: 10.1080/09500349414550361 |
0.574 |
|
| 1994 |
Huffaker DL, Deppe DG, Kumar K, Rogers TJ. Native-oxide defined ring contact for low threshold vertical-cavity lasers Applied Physics Letters. 65: 97-99. DOI: 10.1063/1.113087 |
0.61 |
|
| 1994 |
Huffaker DL, Deppe DG, Rogers TJ. Transverse mode behavior in native-oxide-defined low threshold vertical-cavity lasers Applied Physics Letters. 65: 1611-1613. DOI: 10.1063/1.112927 |
0.595 |
|
| 1994 |
Huffaker DL, Shin J, Deng H, Lin CC, Deppe DG, Streetman BG. Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers Applied Physics Letters. 65: 2642-2644. DOI: 10.1063/1.112589 |
0.713 |
|
| 1994 |
Huffaker D, Deppe D, Shin J. Low threshold half-wave vertical-cavity lasers Electronics Letters. 30: 1946-1947. DOI: 10.1049/El:19941348 |
0.656 |
|
| 1993 |
Deppe DG, Huffaker DL, Lei C. Performance issues related to dielectric stack reflectors for vertical-cavity surface-emitting lasers Proceedings of Spie. 1851: 128-137. DOI: 10.1117/12.147592 |
0.629 |
|
| 1993 |
Huang Z, Lin C, Deppe D. Spontaneous lifetime and quantum efficiency in light emitting diodes affected by a close metal mirror Ieee Journal of Quantum Electronics. 29: 2940-2949. DOI: 10.1109/3.259410 |
0.451 |
|
| 1993 |
Lei C, Deppe D, Huang Z, Lin C. Emission characteristics from dipoles with fixed positions in Fabry-Perot cavities Ieee Journal of Quantum Electronics. 29: 1383-1386. DOI: 10.1109/3.236151 |
0.336 |
|
| 1993 |
Lei C, Huang Z, Deppe DG, Pinzone CJ, Dupuis RD. Spectral interference effects in the light emission from Fabry-Perot cavities Journal of Applied Physics. 73: 2700-2704. DOI: 10.1063/1.353041 |
0.607 |
|
| 1993 |
Lei C, Pinzone CJ, Huang Z, Huffaker DL, Deppe DG, Dupuis RD. Room temperature spontaneous emission in five-micron-long Fabry-Pérot vertical cavities Journal of Applied Physics. 73: 3153-3157. DOI: 10.1063/1.352984 |
0.658 |
|
| 1993 |
Rogers TJ, Lei C, Deppe DG, Streetman BG. Low threshold voltage continuous wave vertical-cavity surface-emitting lasers Applied Physics Letters. 62: 2027-2029. DOI: 10.1063/1.109494 |
0.466 |
|
| 1992 |
Lei C, Deppe DG. Optical gain enhancement in Fabry-Perot microcavity lasers Journal of Applied Physics. 71: 2530-2535. DOI: 10.1063/1.351069 |
0.486 |
|
| 1992 |
Huang Z, Lei C, Deppe DG, Lin CC, Pinzone CJ, Dupuis RD. Spectral and intensity dependence on dipole localization in Fabry-Perot cavities Applied Physics Letters. 61: 2961-2963. DOI: 10.1063/1.108031 |
0.476 |
|
| 1992 |
Huffaker DL, Huang Z, Lei C, Deppe DG, Pinzone CJ, Neff JG, Dupuis RD. Effect on spontaneous emission of quantum well placement in a short vertical cavity Applied Physics Letters. 61: 877-879. DOI: 10.1063/1.107775 |
0.679 |
|
| 1992 |
Deppe DG, Huffaker DL, Rogers TJ, Lei C, Huang Z, Streetman BG. First-order phase transition in a laser threshold Applied Physics Letters. 60: 3081-3083. DOI: 10.1063/1.106758 |
0.588 |
|
| 1992 |
Huffaker DL, Lei C, Deppe DG, Pinzone CJ, Neff JG, Dupuis RD. Controlled spontaneous emission in room-temperature semiconductor microcavities Applied Physics Letters. 60: 3203-3205. DOI: 10.1063/1.106739 |
0.63 |
|
| 1992 |
Deppe DG, Lei C. Spontaneous emission and optical gain in a Fabry-Perot microcavity Applied Physics Letters. 60: 527-529. DOI: 10.1063/1.106596 |
0.33 |
|
| 1992 |
Huffaker D, Deppe D, Lei C, Rogers T, Streetman B, Smith S, Burnham R. Cascadability of optically latching vertical-cavity surface-emitting laser Electronics Letters. 28: 734. DOI: 10.1049/El:19920465 |
0.628 |
|
| 1991 |
Deppe DG, Lei C. Electrodynamics and controlled spontaneous emission in semiconductor microcavity lasers Technical Digest - International Electron Devices Meeting, Iedm. 1991: 607-610. DOI: 10.1109/IEDM.1991.235397 |
0.361 |
|
| 1991 |
Kuchibhotla R, Srinivasan A, Campbell JC, Lei C, Deppe DG, He YS, Streetman BG. Low-voltage high-gain resonant-cavity avalanche photodiode Ieee Photonics Technology Letters. 3: 354-356. DOI: 10.1109/68.82110 |
0.577 |
|
| 1991 |
Huffaker DL, Lee WD, Deppe DG, Lei C, Rogers TJ, Campbell JC, Streetman BG. Optical memory using a vertical-cavity surface emitting laser Ieee Photonics Technology Letters. 3: 1064-1066. DOI: 10.1109/68.118001 |
0.677 |
|
| 1991 |
Deppe DG, Lei C. Spontaneous emission from a dipole in a semiconductor microcavity Journal of Applied Physics. 70: 3443-3448. DOI: 10.1063/1.349236 |
0.334 |
|
| 1991 |
Hall DC, Holonyak N, Deppe DG, Ries MJ, Matyi RJ, Shichijo H, Epler JE. Low-temperature operating life of continuous 300-K AlxGa 1-xAs-GaAs quantum-well heterostructure lasers grown on Si Journal of Applied Physics. 69: 6844-6849. DOI: 10.1063/1.347674 |
0.45 |
|
| 1991 |
Lei C, Rogers TJ, Deppe DG, Streetman BG. Znse/caf2 quarter-wave Bragg reflector for the vertical-cavity surface-emitting laser Journal of Applied Physics. 69: 7430-7434. DOI: 10.1063/1.347557 |
0.482 |
|
| 1991 |
Deppe DG, Lei C, Rogers TJ, Streetman BG. Bistability in an AlAs-GaAs-InGaAs vertical-cavity surface-emitting laser Applied Physics Letters. 58: 2616-2618. DOI: 10.1063/1.104811 |
0.507 |
|
| 1991 |
Lei C, Rogers TJ, Deppe DG, Streetman BG. InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowth Applied Physics Letters. 58: 1122-1124. DOI: 10.1063/1.104390 |
0.54 |
|
| 1991 |
Dupuis RD, Deppe DG, Pinzone CJ, Gerrard ND, Singh S, Zydzik GJ, van der Ziel JP, Green CA. In 0.47Ga0.53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 μm wavelength Journal of Crystal Growth. 107: 790-795. DOI: 10.1016/0022-0248(91)90559-N |
0.604 |
|
| 1990 |
van der Ziel J, Deppe D, Chand N, Zydzik G, Chu S. Characteristics of single- and two-dimensional phase coupled arrays of vertical cavity surface emitting GaAs-AlGaAs lasers Ieee Journal of Quantum Electronics. 26: 1873-1882. DOI: 10.1109/3.62106 |
0.479 |
|
| 1990 |
Rogers TJ, Deppe DG, Streetman BG. Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs-GaAs quantum well Applied Physics Letters. 57: 1858-1860. DOI: 10.1063/1.104120 |
0.462 |
|
| 1990 |
Deppe DG. Gain mechanism of the vertical‐cavity surface‐emitting semiconductor laser Applied Physics Letters. 57: 1721-1723. DOI: 10.1063/1.104046 |
0.332 |
|
| 1990 |
Schubert EF, Tu LW, Kopf RF, Zydzik GJ, Deppe DG. Low-threshold vertical cavity surface-emitting lasers with metallic reflectors Applied Physics Letters. 57: 117-119. DOI: 10.1063/1.103960 |
0.486 |
|
| 1990 |
Deppe DG, van der Ziel JP, Chand N, Zydzik GJ, Chu SNG. Phase‐coupled two‐dimensional AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting laser array Applied Physics Letters. 56: 2089-2091. DOI: 10.1063/1.102981 |
0.431 |
|
| 1990 |
Deppe DG, Singh S, Dupuis RD, Gerrard ND, Zydzik GJ, Van Der Ziel JP, Green CA, Pinzone CJ. Room-temperature photopumped operation of an InGaAs-InP vertical cavity surface-emitting laser Applied Physics Letters. 56: 2172-2174. DOI: 10.1063/1.102958 |
0.481 |
|
| 1990 |
Deppe DG, Gerrard ND, Pinzone CJ, Dupuis RD, Schubert EF. Quarter-wave Bragg reflector stack of InP-In0.53Ga 0.47As for 1.65 μm wavelength Applied Physics Letters. 56: 315-317. DOI: 10.1063/1.102814 |
0.496 |
|
| 1990 |
Deppe DG, Chand N, van der Ziel JP, Zydzik GJ. AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting laser grown on Si substrate Applied Physics Letters. 56: 740-742. DOI: 10.1063/1.102698 |
0.436 |
|
| 1990 |
Deppe D, Campbell J, Kuchibhotla R, Rogers T, Streetman B. Optically-coupled mirror-quantum well InGaAs-GaAs light emitting diode Electronics Letters. 26: 1665. DOI: 10.1049/El:19901066 |
0.642 |
|
| 1989 |
Tai K, Fischer R, Seabury C, Olson N, Huo D, Ota Y, Deppe D, Cho A. Room-temperature continuous wave vertical surface-emitting GaAs injection lasers grown by molecular-beam epitaxy Ieee Transactions On Electron Devices. 36: 2628. DOI: 10.1109/16.43758 |
0.461 |
|
| 1989 |
Deppe DG, Cho AY, Huang KF, Fischer RJ, Tai K, Schubert EF, Chen JF. AlGaAs‐GaAs and AlGaAs‐GaAs‐InGaAs vertical cavity surface emitting lasers with Ag mirrors Journal of Applied Physics. 66: 5629-5631. DOI: 10.1063/1.343671 |
0.305 |
|
| 1988 |
Deppe DG, Guido LJ, Holonyak N. Impurity-Induced Layer Disordering in AlxGa1−xAs-GaAs Quantum well Heterostructures - Mrs Proceedings. 126. DOI: 10.1557/Proc-126-31 |
0.677 |
|
| 1988 |
Deppe DG, Holonyak N, Hsieh KC, Nam DW, Plano WE, Matyi RJ, Shichijo H. Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si Applied Physics Letters. 52: 1812-1814. DOI: 10.1063/1.99633 |
0.314 |
|
| 1988 |
Deppe DG, Plano WE, Dallesasse JM, Hall DC, Guido LJ, Holonyak N. Buried heterostructure AlxGa1-xAs-GaAs quantum well lasers by Ge diffusion from the vapor Applied Physics Letters. 52: 825-827. DOI: 10.1063/1.99296 |
0.842 |
|
| 1988 |
Nam DW, Deppe DG, Holonyak N, Fletcher RM, Kuo CP, Osentowski TD, Craford MG. Short-wavelength (∼625 nm) room-temperature continuous laser operation of In0.5(AlxGa1-x)0.5P quantum well heterostructures Applied Physics Letters. 52: 1329-1331. DOI: 10.1063/1.99149 |
0.529 |
|
| 1988 |
Deppe DG, Nam DW, Holonyak N, Hsieh KC, Baker JE, Kuo CP, Fletcher RM, Osentowski TD, Craford MG. Impurity-induced layer disordering of high gap Iny(Al xGa1-x)1-yP heterostructures Applied Physics Letters. 52: 1413-1415. DOI: 10.1063/1.99132 |
0.359 |
|
| 1988 |
Deppe DG, Holonyak N, Plano WE, Robbins VM, Dallesasse JM, Hsieh KC, Baker JE. Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures Journal of Applied Physics. 64: 1838-1844. DOI: 10.1063/1.341759 |
0.679 |
|
| 1988 |
Hall DC, Deppe DG, Holonyak N, Matyi RJ, Shichijo H, Epler JE. Thermal behavior and stability of room-temperature continuous Al xGa1-xAs-GaAs quantum well heterostructure lasers grown on Si Journal of Applied Physics. 64: 2854-2860. DOI: 10.1063/1.341596 |
0.485 |
|
| 1988 |
Dallesasse JM, Nam DW, Deppe DG, Holonyak N, Fletcher RM, Kuo CP, Osentowski TD, Craford MG. Short-wavelength (≲6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers Applied Physics Letters. 53: 1826-1828. DOI: 10.1063/1.100388 |
0.772 |
|
| 1988 |
Deppe DG, Hall DC, Holonyak N, Matyi RJ, Shichijo H, Epler JE. Effects of microcracking on AlxGa1-xAs-GaAs quantum well lasers grown on Si Applied Physics Letters. 53: 874-876. DOI: 10.1063/1.100100 |
0.547 |
|
| 1988 |
Julien F, Swanson P, Tang T, Deppe DG, Emanuel M, Detemple TA, Coleman JJ, Holonyak N. Guides d’ondes enfouis dans des superréseaux GaAs-AIGaAs créés par interdiffusion induite par des impuretés Annales Des TéLéCommunications. 43: 66-72. DOI: 10.1007/Bf02995072 |
0.439 |
|
| 1987 |
Deppe D, Holonyak N, Nam D, Hsieh K, Kaliski R, Matyi R, Lee J, Shichijo H, Epler J, Burnham R, Chung H, Paoli T. VB-6 continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si Ieee Transactions On Electron Devices. 34: 2380-2380. DOI: 10.1109/T-Ed.1987.23306 |
0.561 |
|
| 1987 |
Deppe DG, Nam DW, Holonyak N, Hsieh KC, Matyi RJ, Shichijo H, Epler JE, Chung HF. Stability of 300 K continuous operation of p-n AlxGa 1-xAs-GaAs quantum well lasers grown on Si Applied Physics Letters. 51: 1271-1273. DOI: 10.1063/1.98702 |
0.498 |
|
| 1987 |
Deppe DG, Holonyak N, Nam DW, Hsieh KC, Jackson GS, Matyi RJ, Shichijo H, Epler JE, Chung HF. Room-temperature continuous operation of p-n AlxGa 1-xAs-GaAs quantum well heterostructure lasers grown on Si Applied Physics Letters. 51: 637-639. DOI: 10.1063/1.98371 |
0.566 |
|
| 1987 |
Deppe DG, Jackson GS, Holonyak N, Hall DC, Burnham RD, Thornton RL, Epler JE, Paoli TL. Impurity-induced layer-disordered buried heterostructure Al xGa1-xAs-GaAs quantum well edge-injection laser array Applied Physics Letters. 50: 392-394. DOI: 10.1063/1.98209 |
0.559 |
|
| 1987 |
Deppe DG, Jackson GS, Holonyak N, Burnham RD, Thornton RL. Coupled stripe AlxGa1-xAs-GaAs quantum well lasers defined by impurity-induced (Si) layer disordering Applied Physics Letters. 50: 632-634. DOI: 10.1063/1.98103 |
0.573 |
|
| 1987 |
Julien F, Swanson PD, Emanuel MA, Deppe DG, DeTemple TA, Coleman JJ, Holonyak N. Impurity‐induced disorder‐delineated optical waveguides in GaAs‐AlGaAs superlattices Applied Physics Letters. 50: 866-868. DOI: 10.1063/1.98015 |
0.563 |
|
| 1987 |
Kaliski RW, Nam DW, Deppe DG, Holonyak N, Hsieh KC, Burnham RD. Thermal annealing and photoluminescence measurements on Al xGa1-xAs-GaAs quantum-well heterostructures with Se and Mg sheet doping Journal of Applied Physics. 62: 998-1005. DOI: 10.1063/1.339661 |
0.397 |
|
| 1987 |
Guido LJ, Holonyak N, Hsieh KC, Kaliski RW, Baker JE, Deppe DG, Burnham RD, Thornton RL, Paoli TL. Impurity-induced disordering of AlxGa1-xAs-GaAs quantum well heterostructures with (Si2)x(GaAs)1-x barriers Journal of Electronic Materials. 16: 87-91. DOI: 10.1007/Bf02667795 |
0.667 |
|
| 1986 |
Deppe DG, Jackson GS, Holonyak N, Hall DC, Burnham RD, Thornton RL, Epler JE, Paoli TL. Single-mode single-lobe operation of broad area AlxGa 1-xAs-GaAs quantum well lasers Applied Physics Letters. 49: 883-885. DOI: 10.1063/1.97524 |
0.564 |
|
| 1986 |
Thornton RL, Burnham RD, Paoli TL, Holonyak N, Deppe DG. Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering Applied Physics Letters. 49: 133-134. DOI: 10.1063/1.97201 |
0.403 |
|
| 1986 |
Deppe DG, Guido LJ, Holonyak N, Hsieh KC, Burnham RD, Thornton RL, Paoli TL. Stripe-geometry quantum well heterostructure AlxGa 1-xAs-GaAs lasers defined by defect diffusion Applied Physics Letters. 49: 510-512. DOI: 10.1063/1.97133 |
0.771 |
|
| 1986 |
Thornton RL, Burnham RD, Paoli TL, Holonyak N, Deppe DG. Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering Applied Physics Letters. 48: 7-9. DOI: 10.1063/1.96769 |
0.465 |
|
| 1986 |
Jackson GS, Deppe DG, Hsieh KC, Holonyak N, Hall DC, Burnham RD, Thornton RL, Paoli TL. Reduced temperature sensitivity AlxGa1-xAs-GaAs quantum well lasers with (Si2)x(GaAs)1-x]] barriers" Applied Physics Letters. 48: 1156-1158. DOI: 10.1063/1.96455 |
0.433 |
|
| 1986 |
Thornton RL, Burnham RD, Paoli TL, Holonyak N, Deppe DG. Opto-electronic device structures fabricated by impurity induced disordering Journal of Crystal Growth. 77: 621-628. DOI: 10.1016/0022-0248(86)90360-X |
0.308 |
|
| 1985 |
Thornton RL, Burnham RD, Paoli TL, Holonyak N, Deppe DG. IVA-8 Low-Threshold AlGaAs Laser Diodes Fabricated by Silicon Impurity-Induced Disordering Ieee Transactions On Electron Devices. 32: 2541-2542. DOI: 10.1109/T-Ed.1985.22345 |
0.416 |
|
| 1985 |
Thornton RL, Burnham RD, Paoli TL, Holonyak N, Deppe DG. Low threshold planar buried heterostructure lasers fabricated by impurity-induced disordering Applied Physics Letters. 47: 1239-1241. DOI: 10.1063/1.96290 |
0.438 |
|
| 1985 |
Gavrilovic P, Deppe DG, Meehan K, Holonyak N, Coleman JJ, Burnham RD. Implantation disordering of AlxGa1−xAs superlattices Applied Physics Letters. 47: 130-132. DOI: 10.1063/1.96238 |
0.472 |
|
| 1985 |
Deppe DG, Hsieh KC, Holonyak N, Burnham RD, Thornton RL. Low-threshold disorder-defined buried-heterostructure AlxGa 1-xAs-GaAs quantum well lasers Journal of Applied Physics. 58: 4515-4520. DOI: 10.1063/1.336265 |
0.539 |
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| Show low-probability matches. |
