Year |
Citation |
Score |
2012 |
Jung YS, Lee KH, Kim W, Lee W, Choi H, Kim KH. Properties of In–Ga–Zn-O thin films for thin film transistor channel layer prepared by facing targets sputtering method Ceramics International. 38. DOI: 10.1016/J.Ceramint.2011.05.106 |
0.41 |
|
2008 |
Lee S, Jeong Y, Jeong S, Cho C, Ahn H, Kim H, Lee W. SPECTROSCOPIC STUDY ON DIFFUSION PHENOMENON OF THERMALLY ANNEALED Pt/TiOx ELECTRODE Integrated Ferroelectrics. 96: 60-68. DOI: 10.1080/10584580802091631 |
0.333 |
|
2008 |
Kim HS, Jung ES, Lee W, Kim JH, Ryu S, Choi S. Effects of oxygen concentration on the electrical properties of ZnO films Ceramics International. 34: 1097-1101. DOI: 10.1016/J.Ceramint.2007.09.105 |
0.396 |
|
2008 |
Kim EM, Cho J, Moon JH, Lee W, Kim HS, Kim JH. Effects of deposition temperature on the crystallinity of Ba0.5Sr0.5TiO3 epitaxial thin films integrated on Si substrates by pulsed laser deposition method Ceramics International. 34: 1017-1021. DOI: 10.1016/J.Ceramint.2007.09.081 |
0.417 |
|
2007 |
Kim BR, Kim T, Lee W, Moon JH, Lee B, Kim HS, Kim JH. Effects of periodicity and oxygen partial pressure on the crystallinity and dielectric property of artificial SrTiO3/BaTiO3 superlattices integrated on Si substrates by pulsed laser deposition method Thin Solid Films. 515: 6438-6441. DOI: 10.1016/J.Tsf.2006.11.047 |
0.349 |
|
2006 |
Seong NJ, Lee WJ, Yoon SG. Structural and electrical characterizations of ultrathin HfO2 gate dielectrics treated by nitrogen-plasma atmosphere Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 312-315. DOI: 10.1116/1.2151218 |
0.347 |
|
2005 |
Seong NJ, Yoon SG, Lee WJ. Electrical characteristics of Ga 2O 3-TiO 2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications Applied Physics Letters. 87. DOI: 10.1063/1.2034100 |
0.372 |
|
2001 |
Lee W, You I, Ryu S, Yu B, Cho K, Yoon S, Lee C. SrTa2O6 thin films deposited by plasma-enhanced atomic layer deposition Japanese Journal of Applied Physics. 40: 6941-6944. DOI: 10.1143/Jjap.40.6941 |
0.436 |
|
2001 |
Lee H, Kim TW, Lee W, Park J, Kang D. Characteristics of Organic Light-Emitting Diodes Using PECCP Langmuir-Blodgett Film as an Emissive Layer Molecular Crystals and Liquid Crystals Science and Technology. Section a. Molecular Crystals and Liquid Crystals. 371: 451-454. DOI: 10.1080/10587250108024781 |
0.348 |
|
2001 |
Choi ES, Yoon SG, Lee WJ. Improvements in electrical properties of hydrogen-treated SrBi2Ta2O9 capacitors with chemical vapor deposited Pt top electrode Applied Physics Letters. 78: 2040-2042. DOI: 10.1063/1.1347015 |
0.328 |
|
2000 |
Lee W, You I, Yang I, Yu B, Cho K. Phase Formations and Electrical Properties of (SrxBa1-x)Bi2Ta2O9 Thin Films. Japanese Journal of Applied Physics. 39: 5469-5471. DOI: 10.1143/Jjap.39.5469 |
0.421 |
|
2000 |
Seo J, Lee D, Lee W, Yu B, Kwon K, Yeom G, Chang E, Kim C. Etching characteristics of SrBi2Ta2O9 film with Ar/CHF3 plasma Journal of Vacuum Science and Technology. 18: 1354-1358. DOI: 10.1116/1.582353 |
0.402 |
|
1999 |
Lee W, Cho C, Kim S, You I, Kim BW, Yu B, Shin CH, Lee HC. Etching behavior and damage recovery of SrBi2Ta2O9 thin films Japanese Journal of Applied Physics. 38: 1428-1431. DOI: 10.1143/Jjap.38.L1428 |
0.395 |
|
1999 |
Lee W, Shin C, Cho C, Lyu J, Kim B, Yu B, Cho K. Electrical Properties of SrBi2Ta2O9/Insulator/Si Structures with Various Insulators Japanese Journal of Applied Physics. 38: 2039-2043. DOI: 10.1143/Jjap.38.2039 |
0.348 |
|
1999 |
Cho C, Lee W, Yu B, Kim B, Park KB. Structural and Ferroelectric Properties of Sol–Gel Deposited Nb-doped Pb[(Sc1/2Nb1/2)0.57Ti0.43]O3 Thin Films Japanese Journal of Applied Physics. 38: 1459-1465. DOI: 10.1143/Jjap.38.1459 |
0.43 |
|
1999 |
Cho C, Lee W, Yu B, Kim B. Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film Journal of Applied Physics. 86: 2700-2711. DOI: 10.1063/1.371114 |
0.424 |
|
1998 |
Ahn J, Lee W, Kim H. Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of(Ba,Sr)TiO3 Thin Films Japanese Journal of Applied Physics. 37: 6472-6475. DOI: 10.1143/Jjap.37.6472 |
0.411 |
|
1998 |
Ahn J, Choi W, Lee W, Kim H. Annealing of RuO 2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO 3 Thin Films Japanese Journal of Applied Physics. 37: 284-289. DOI: 10.1143/Jjap.37.284 |
0.428 |
|
1998 |
Choi W, Ahn J, Lee W, Kim H. Electrical properties of Sb-doped PZT films deposited by d.c. reactive sputtering using multi-targets Materials Letters. 37: 119-127. DOI: 10.1016/S0167-577X(98)00082-2 |
0.417 |
|
1997 |
Kim N, Yoon S, Lee W, Kim H. Electrical and Structural Properties of SrTiO 3 Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition Journal of Materials Research. 12: 1160-1164. DOI: 10.1557/Jmr.1997.0160 |
0.433 |
|
1997 |
Kim N, Yoon S, Lee W, Kim H. Effects of SrF2 phase on electrical properties of SrTiO3 thin films deposited by plasma-enhanced metalorganic chemical vapor deposition Integrated Ferroelectrics. 14: 105-113. DOI: 10.1080/10584589708019982 |
0.427 |
|
1996 |
Lee W, Kim H, Yoon S. Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si Journal of Applied Physics. 80: 5891-5894. DOI: 10.1063/1.363583 |
0.428 |
|
1996 |
Kim Y, Lee W, Kim H. Deposition of PZT films by MOCVD at low temperature and their change in properties with annealing temperature and Zr/Ti ratio Thin Solid Films. 279: 140-144. DOI: 10.1016/0040-6090(95)08171-2 |
0.372 |
|
1995 |
Lee W, Park I, Jang G, Kim H. Electrical Properties and Crystal Structure of (Ba0.5Sr0.5)TiO3 Thin Films Prepared on Pt/SiO2/Si by RF Magnetron Sputtering Japanese Journal of Applied Physics. 34: 196-199. DOI: 10.1143/Jjap.34.196 |
0.434 |
|
1995 |
Lee WJ, Kim HG. Oxygen plasma effects on electrical properties of barium strontium titanate (bst) thin films Integrated Ferroelectrics. 7: 207-214. DOI: 10.1080/10584589508220233 |
0.406 |
|
1995 |
Lee W, Kim H. Electrical properties of barium strontium titanate (BST) thin films deposited on various PT-base electrodes Integrated Ferroelectrics. 11: 111-119. DOI: 10.1080/10584589508013583 |
0.432 |
|
1995 |
Chae SJ, Lee WJ, Park SS, Kim HG, Yoon SG. Characterization of (Pb1-xLax)TiO3 Thin Films Grown by Radio -Frequency Magnetron Sputtering and Their Electrical Properties Integrated Ferroelectrics. 10: 63-72. DOI: 10.1080/10584589508012264 |
0.412 |
|
1995 |
Lee W, Kim Y, Kim H. Pt-base electrodes and effects on phase formations and electrical properties of high-dielectric thin films Thin Solid Films. 269: 75-79. DOI: 10.1016/0040-6090(95)06755-8 |
0.43 |
|
1995 |
Choi CG, No K, Lee W, Kim H, Jung SO, Lee WJ, Kim WS, Kim SJ, Yoon C. Effects of oxygen partial pressure on the microstructure and electrical properties of indium tin oxide film prepared by d.c. magnetron sputtering Thin Solid Films. 258: 274-278. DOI: 10.1016/0040-6090(94)06354-0 |
0.368 |
|
1994 |
Nam S, Lee W, Kim H. Oriented growth of SrTiO3 thin films on Si substrate by radio frequency magnetron sputtering Journal of Physics D. 27: 866-870. DOI: 10.1088/0022-3727/27/4/029 |
0.412 |
|
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