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Nien-Po Chen, Ph.D. - Publications

Affiliations: 
2001 Purdue University, West Lafayette, IN, United States 
Area:
Condensed Matter Physics, Electronics and Electrical Engineering
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Chu WP, Lin JS, Lin TC, Tsai YS, Kuo CW, Chung MH, Hsieh TE, Liu LC, Juang FS, Chen NP. Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells Optics Communications. 285: 3325-3328. DOI: 10.1016/J.Optcom.2012.02.088  0.338
2011 Lin S, Lin J, Chen N, Ko C, Juang F, Chung M, Chen C, Liu L. Synthesis of ultraviolet curable encapsulating adhesives and their package applications for organic optoelectronic devices Solid State Sciences. 13: 1889-1895. DOI: 10.1016/J.Solidstatesciences.2011.08.002  0.323
2011 Chang HH, Tsai WS, Chang CP, Chen NP, Wong KT, Hung WY, Chen SW. A new tricarbazole phosphine oxide bipolar host for efficient single-layer blue PhOLED Organic Electronics: Physics, Materials, Applications. 12: 2025-2032. DOI: 10.1016/J.Orgel.2011.08.030  0.335
2011 Chung M, Lin J, Hsieh T, Chen N, Juang F, Chen C, Liu L. Preparation of organic/inorganic hybrid nanocomposites by ultraviolet irradiation and their packaging applications for organic optoelectronic devices Applied Surface Science. 257: 9142-9151. DOI: 10.1016/J.Apsusc.2011.05.117  0.31
2010 Lin J, Lin S, Chen N, Ko C, Tsai Z, Juang F, Chen C, Liu L. Manufacture of brightness enhancement films (BEFs) by ultraviolet (UV) irradiation and their applications for organic light emitting diodes (OLEDs) Synthetic Metals. 160: 1493-1500. DOI: 10.1016/J.Synthmet.2010.05.009  0.317
2009 Ko C, Lin J, Chen C, Chen N. A Silver-Coated Sinusoidal Sub-Wavelength Structure With Polarization Feature For Light Emitting Diode Surface Review and Letters. 16: 631-634. DOI: 10.1142/S0218625X09012998  0.305
2009 Tu C, Chen N, Liu J. The influence of Si doping to the characteristics of AlGaAs / AlAs distributed Bragg reflectors Proceedings of Spie. 7422: 742216. DOI: 10.1117/12.825596  0.395
2008 Chen NP, Janes DB. Distribution model of arsenic antisite defects in LTG:GaAs Journal of Physics and Chemistry of Solids. 69: 325-329. DOI: 10.1016/J.Jpcs.2007.07.026  0.342
2003 Lodha S, Janes DB, Chen NP. Unpinned interface Fermi-level in Schottky contacts to n-GaAs capped with low-temperature-grown GaAs; experiments and modeling using defect state distributions Journal of Applied Physics. 93: 2772-2779. DOI: 10.1063/1.1536734  0.347
2002 Lodha S, Janes DB, Chen NP. Fermi level unpinning in ex situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs Applied Physics Letters. 80: 4452-4454. DOI: 10.1063/1.1484243  0.399
2000 Chen N, Ueng HJ, Janes DB, Woodall JM, Melloch MR. A quantitative conduction model for a low-resistance nonalloyed ohmic contact structure utilizing low-temperature-grown GaAs Journal of Applied Physics. 88: 309-315. DOI: 10.1063/1.373658  0.387
2000 Lee T, Chen NP, Liu J, Andres RP, Janes DB, Chen EH, Melloch MR, Woodall JM, Reifenberger R. Ohmic nanocontacts to GaAs using undoped and p-doped layers of low-temperature-grown GaAs Applied Physics Letters. 76: 212-214. DOI: 10.1063/1.125705  0.516
2000 Janes DB, Lee T, Liu J, Batistuta M, Chen N, Walsh BL, Andres RP, Chen E-, Melloch MR, Woodall JM, Reifenberger R. Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications Journal of Electronic Materials. 29: 565-569. DOI: 10.1007/S11664-000-0046-Z  0.496
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