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Vibhu Jindal, Ph.D. - Publications

Affiliations: 
2008 State University of New York, Albany, Albany, NY, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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46 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Upadhyaya M, Jindal V, Basavalingappa A, Herbol H, Harris-Jones J, Jang IY, Goldberg KA, Mochi I, Marokkey S, Demmerle W, Pistor TV, Denbeaux G. Evaluating printability of buried native EUV mask phase defects through a modeling and simulation approach Proceedings of Spie - the International Society For Optical Engineering. 9422. DOI: 10.1117/12.2175842  0.373
2015 Upadhyaya M, Jindal V, Basavalingappa A, Herbol H, Harris-Jones J, Jang IY, Goldberg KA, Mochi I, Marokkey S, Demmerle W, Pistor TV, Denbeaux G. Evaluating printability of buried native extreme ultraviolet mask phase defects through a modeling and simulation approach Journal of Micro/ Nanolithography, Mems, and Moems. 14. DOI: 10.1117/1.Jmm.14.2.023505  0.377
2015 Upadhyaya M, Basavalingappa A, Herbol H, Denbeaux G, Jindal V, Harris-Jones J, Jang IY, Goldberg KA, Mochi I, Marokkey S, Demmerle W, Pistor TV. Level-set multilayer growth model for predicting printability of buried native extreme ultraviolet mask defects Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4913315  0.364
2014 Upadhyaya M, Jindal V, Herbol H, Jang IY, Kwon HJ, Harris-Jones J, Denbeaux G. Investigating printability of native defects on EUV mask blanks through simulations and experiments Proceedings of Spie - the International Society For Optical Engineering. 9048. DOI: 10.1117/12.2057761  0.352
2013 Jindal V, John A, Harris-Jones J, Kearney P, Antohe A, Stinzianni E, Goodwin F, Onoue T. Inspection and compositional analysis of sub-20 nm EUV mask blank defects by thin film decoration technique Proceedings of Spie - the International Society For Optical Engineering. 8679. DOI: 10.1117/12.2012173  0.357
2013 Jindal V, Kearney P, Antohe A, Godwin M, John A, Teki R, Harris-Jones J, Stinzianni E, Goodwin F. Challenges in EUV mask blank deposition for high volume manufacturing Proceedings of Spie - the International Society For Optical Engineering. 8679. DOI: 10.1117/12.2012169  0.332
2013 Harris-Jones J, Stinzianni E, Lin C, Jindal V, Teki R, Kwon HJ. Applications of advanced metrology techniques for the characterization of extreme ultraviolet mask blank defects Journal of Micro/Nanolithography, Mems, and Moems. 12. DOI: 10.1117/1.Jmm.12.1.013007  0.351
2013 Kageyama J, Yoshimoto M, Matsuda A, Jindal V, Kearney P, Goodwin F. Influence of shield roughness on Mo/Si defect density for extreme ultraviolet lithography mask blanks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4813776  0.363
2012 Upadhyaya M, Denbeaux G, JohnKadaksham A, Jindal V, Harris-Jones J, Lee B, Goodwin F. A simulation study of cleaning induced EUV reflectivity loss mechanisms on mask blanks Proceedings of Spie - the International Society For Optical Engineering. 8322. DOI: 10.1117/12.917972  0.322
2012 Jindal V, Kearney P, Sohn J, Harris-Jones J, John A, Godwin M, Antohe A, Teki R, Ma A, Goodwin F, Weaver A, Teora P. Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks Proceedings of Spie - the International Society For Optical Engineering. 8322. DOI: 10.1117/12.916580  0.317
2012 Harris-Jones J, Jindal V, Kearney P, Teki R, John A, Kwon HJ. Smoothing of substrate pits using ion beam deposition for EUV lithography Proceedings of Spie - the International Society For Optical Engineering. 8322. DOI: 10.1117/12.916390  0.404
2012 Upadhyaya M, Denbeaux G, Kadaksham AJ, Jindal V, Jones JH, Lee B, Goodwin F. Simulation study of cleaning induced extreme ultraviolet reflectivity loss mechanisms on mask blanks Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4746245  0.309
2011 Lytle WM, Andruczyk D, Jindal V, Ruzic DN. Plasma-assisted cleaning by metastable-atom neutralization (PACMAN): A plasma approach to cleanliness in lithography Proceedings of Spie - the International Society For Optical Engineering. 7969. DOI: 10.1117/12.881038  0.341
2011 Khopkar Y, Thomas P, Yankulin L, Garg R, Mbanaso C, Antohe A, Upadhyaya M, Kamineni VK, Fan YJ, Denbeaux G, Jindal V, Wüest A, Gullikson E. Dependence of contamination rates on key parameters in EUV optics Proceedings of Spie - the International Society For Optical Engineering. 7969. DOI: 10.1117/12.879491  0.324
2011 Jindal V, Kearney P, Harris-Jones J, Hayes A, Kools J. Modeling the EUV multilayer deposition process on EUV blanks Proceedings of Spie. 7969. DOI: 10.1117/12.879467  0.349
2011 Jindal V, Lin CC, Harris-Jones J, Kageyama J. SEMATECH's infrastructure for defect metrology and failure analysis to support its EUV mask defect reduction program Proceedings of Spie - the International Society For Optical Engineering. 7969. DOI: 10.1117/12.879466  0.314
2010 Fahrenkopf NM, Jindal V, Tripathi N, Oktyabrsky S, Shahedipour-Sandvik F, Tokranova N, Bergkvist M, Cady NC. Exploiting phosphate dependent DNA immobilization on HfO2, ZrO2, and AlGaN for integrated biosensors Materials Research Society Symposium Proceedings. 1236: 115-120. DOI: 10.1557/Proc-1236-Ss05-16  0.711
2010 Thomas P, Yankulin L, Khopkar Y, Garg R, Mbanaso C, Antohe A, Fan YJ, Denbeaux G, Aouadi S, Jindal V, Wüest A. Wavelength dependence of carbon contamination on mirrors with different capping layers Proceedings of Spie - the International Society For Optical Engineering. 7636. DOI: 10.1117/12.847015  0.315
2010 Jindal V, Shahedipour-Sandvik F. Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride Journal of Applied Physics. 107. DOI: 10.1063/1.3309840  0.674
2010 Tripathi N, Jindal V, Shahedipour-Sandvik F, Rajan S, Vert A. Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces Solid-State Electronics. 54: 1291-1294. DOI: 10.1016/J.Sse.2010.06.008  0.739
2009 Bell LD, Tripathi N, Grandusky JR, Jindal V, Shahedipour-Sandvik F. A III-nitride layered barrier structure for hyperspectral imaging applications Materials Research Society Symposium Proceedings. 1167: 61-68. DOI: 10.1557/Proc-1167-O06-03  0.793
2009 Jindal V, Garg R, Denbeaux G, Wüest A. Assumptions and trade-offs of extreme ultraviolet optics contamination modeling Proceedings of Spie - the International Society For Optical Engineering. 7271. DOI: 10.1117/12.814188  0.307
2009 Jindal V, Shahedipour-Sandvik F. Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes Journal of Applied Physics. 106. DOI: 10.1063/1.3253575  0.625
2009 Jindal V, Shahedipour-Sandvik F. Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN Journal of Applied Physics. 105. DOI: 10.1063/1.3106164  0.656
2009 Reshchikov MA, Shahedipour-Sandvik F, Messer BJ, Jindal V, Tripathi N, Tungare M. Defect-related photoluminescence in Mg-doped GaN nanostructures Physica B: Condensed Matter. 404: 4903-4906. DOI: 10.1016/J.Physb.2009.08.232  0.776
2009 Grandusky JR, Jindal V, Raynolds JE, Guha S, Shahedipour-Sandvik F. Density functional calculations of the strain effects on binding energies and adatom diffusion on (0 0 0 1) GaN surfaces Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 158: 13-18. DOI: 10.1016/J.Mseb.2008.12.042  0.778
2009 Xu X, Jindal V, Shahedipour-Sandvik F, Bergkvist M, Cady NC. Direct immobilization and hybridization of DNA on group III nitride semiconductors Applied Surface Science. 255: 5905-5909. DOI: 10.1016/J.Apsusc.2009.01.029  0.619
2008 Jindal V, Grandusky J, Tripathi N, Tungare M, Shahedipour-Sandvik F. Effect of interfacial strain on shape and composition of MOCVD grown III-Nitride nanostructures Mrs Proceedings. 1087. DOI: 10.1557/Proc-1087-V07-02  0.782
2008 Jindal V, Grandusky J, Tripathi N, Tungare M, Shahedipour-Sandvik F. Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surfaces Materials Research Society Symposium Proceedings. 1040: 158-164. DOI: 10.1557/Proc-1040-Q06-02  0.765
2008 Jindal V, Grandusky J, Tripathi N, Tungare M, Shahedipour-Sandvik F, Sandvik P, Tilak V. Development of homoepitaxially grown GaN thin film layers on freestanding bulk m-plane substrates by metalorganic chemical vapor deposition (MOCVD) Materials Research Society Symposium Proceedings. 1040: 171-177. DOI: 10.1557/Proc-1040-Q01-08  0.802
2008 Bell LD, Tripathi N, Grandusky JR, Jindal V, Shahedipour-Sandvik FS. III-nitride heterostructure layered tunnel barriers for a tunable hyperspectral detector Ieee Sensors Journal. 8: 724-729. DOI: 10.1109/Jsen.2008.923180  0.786
2008 Jindal V, Grandusky J, Jamil M, Tripathi N, Thiel B, Shahedipour-Sandvik F, Balch J, LeBoeuf S. Effect of interfacial strain on the formation of AlGaN nanostructures by selective area heteroepitaxy Physica E: Low-Dimensional Systems and Nanostructures. 40: 478-483. DOI: 10.1016/J.Physe.2007.07.026  0.809
2008 Jindal V, Tripathi N, Tungare M, Paschos O, Haldar P, Shahedipour-Sandvik F. Selective area heteroepitaxy of low dimensional a-plane and c-plane InGaN nanostructures using pulsed MOCVD Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1709-1711. DOI: 10.1002/Pssc.200778599  0.784
2008 Tripathi N, Bell LD, Grandusky JR, Jindal V, Shahedipour-Sandvik F. Growth and characterization of a novel hyperspectral detector using the III-nitrides Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2228-2230. DOI: 10.1002/Pssc.200778597  0.792
2007 Jindal V, Grandusky JR, Tripathi N, Shahedipour-Sandvik F, LeBoeuf S, Balch J, Tolliver T. Selective area heteroepitaxy of nano-AlGaN ultraviolet excitation sources for biofluorescence application Journal of Materials Research. 22: 838-844. DOI: 10.1557/Jmr.2007.0141  0.795
2007 Grandusky JR, Jamil M, Jindal V, Tripathi N, Shahedipour-Sandvik F. Identification of important growth parameters for the development of high quality Alx>0.5Ga1-xN grown by metal organic chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 441-447. DOI: 10.1116/1.2713409  0.806
2007 Jamil M, Grandusky JR, Jindal V, Tripathi N, Shahedipour-Sandvik F. Mechanism of large area dislocation defect reduction in GaN layers on AlNSi (111) by substrate engineering Journal of Applied Physics. 102. DOI: 10.1063/1.2753706  0.805
2007 Tripathi N, Grandusky JR, Jindal V, Shahedipour-Sandvik F, Bell LD. AlGaN based tunable hyperspectral detector Applied Physics Letters. 90. DOI: 10.1063/1.2746069  0.793
2007 Grandusky JR, Jindal V, Tripathi N, Shahedipour-Sandvik F, Lu H, Kaminsky EB, Melkote R. Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers Journal of Crystal Growth. 307: 309-314. DOI: 10.1016/J.Jcrysgro.2007.06.033  0.813
2006 Jindal V, Grandusky J, Shahedipour-Sandvik F, LeBoeuf S, Balch J, Tolliver T. Selective area heteroepitaxy of nano-AlGaN UV excitation sources for biofluorescence application Materials Research Society Symposium Proceedings. 916: 97-102. DOI: 10.1557/Proc-0916-Dd05-03  0.782
2006 Cartwright AN, Cheung MCK, Shahedipour-Sandvik F, Grandusky JR, Jamil M, Jindal V, Schujman SB, Schowalter LJ, Wetzel C, Li P, Detchprohm T, Nelson JS. Ultrafast carrier dynamics and recombination in green emitting InGaN MQW LED Materials Research Society Symposium Proceedings. 916: 77-87. DOI: 10.1557/Proc-0916-Dd04-10  0.731
2006 Grandusky JR, Jindal V, Jamil M, Shahedipour-Sandvik F. Effects of GaN template annealing on the optical and morphological quality of the homoepitaxially overgrown GaN layer Materials Research Society Symposium Proceedings. 892: 691-696. DOI: 10.1557/Proc-0892-Ff27-07  0.81
2006 Jamil M, Grandusky JR, Jindal V, Tripathi N, Shahedipour-Sandvik F. Dislocation reduction and structural properties of GaN layers grown on N+-implanted AIN/Si (111) substrates Materials Research Society Symposium Proceedings. 892: 537-542. DOI: 10.1557/Proc-0892-Ff22-03  0.798
2006 Jindal V, Grandusky J, Jamil M, Irissou E, Sandvik FS, Matocha K, Tilak V. Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using metalorganic chemical vapor deposition: A growth mechanism study Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 1792-1797. DOI: 10.1002/Pssc.200565343  0.737
2006 Jamil M, Irissou E, Grandusky JR, Jindal V, Shahedipour-Sandvik F. Reduction of strain and dislocation defects in GaN layers grown on Si substrate by MOCVD using a substrate defect engineering technique Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 1787-1791. DOI: 10.1002/Pssc.200565342  0.795
2005 Jamil M, Grandusky JR, Jindal V, Shahedipour-Sandvik F, Guha S, Arif M. Development of strain reduced GaN on Si (111) by substrate engineering Applied Physics Letters. 87. DOI: 10.1063/1.2012538  0.812
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