| Year |
Citation |
Score |
| 2020 |
Kim Y, Hu B, Huang R, Tang A, Joye C, Itoh T, Chang MF. 150-GHz CMOS TX/RX With Digitally Predistorted PAM-4 Modulation for Terahertz Contactless/Plastic Waveguide Communications Ieee Transactions On Terahertz Science and Technology. 10: 370-382. DOI: 10.1109/Tthz.2020.2991303 |
0.442 |
|
| 2020 |
Tang A, Carey R, Virbila G, Zhang Y, Huang R, Chang MF. A Delay-Correlating Direct-Sequence Spread-Spectrum (DS/SS) Radar System-on-Chip Operating at 183–205 GHz in 28 nm CMOS Ieee Transactions On Terahertz Science and Technology. 10: 212-220. DOI: 10.1109/Tthz.2020.2969105 |
0.434 |
|
| 2020 |
Du L, Du Y, Chang MF. A Reconfigurable 64-Dimension K -Means Clustering Accelerator With Adaptive Overflow Control Ieee Transactions On Circuits and Systems Ii-Express Briefs. 67: 760-764. DOI: 10.1109/Tcsii.2019.2922657 |
0.32 |
|
| 2019 |
Kim Y, Zhang Y, Reck TJ, Nemchick DJ, Chattopadhyay G, Drouin B, Chang MF, Tang A. A 183-GHz InP/CMOS-Hybrid Heterodyne-Spectrometer for Spaceborne Atmospheric Remote Sensing Ieee Transactions On Terahertz Science and Technology. 9: 313-334. DOI: 10.1109/Tthz.2019.2910988 |
0.48 |
|
| 2019 |
Zhang Y, Kim Y, Tang A, Kawamura JH, Reck TJ, Chang MF. Integrated Wide-Band CMOS Spectrometer Systems for Spaceborne Telescopic Sensing Ieee Transactions On Circuits and Systems I-Regular Papers. 66: 1863-1873. DOI: 10.1109/Tcsi.2019.2896850 |
0.454 |
|
| 2019 |
Du Y, Du L, Gu X, Du J, Wang XS, Hu B, Jiang M, Chen X, Iyer SS, Chang MF. An Analog Neural Network Computing Engine Using CMOS-Compatible Charge-Trap-Transistor (CTT) Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 38: 1811-1819. DOI: 10.1109/Tcad.2018.2859237 |
0.385 |
|
| 2019 |
Kim Y, Hu B, Du Y, Cho W, Huang R, Tang A, Chen H, Jou C, Cong J, Itoh T, Chang MF. A Millimeter-Wave CMOS Transceiver With Digitally Pre-Distorted PAM-4 Modulation for Contactless Communications Ieee Journal of Solid-State Circuits. 54: 1600-1612. DOI: 10.1109/Jssc.2019.2896413 |
0.493 |
|
| 2018 |
Tang A, Kim Y, Reck TJ, Chattopadhyay G, Mehdi I, Drouin BJ, Cooper KB, Livesey NJ, Chang MF. DDFS and ΣΔ Approaches for Fractional Frequency Synthesis in Terahertz Instruments Ieee Transactions On Terahertz Science and Technology. 8: 410-417. DOI: 10.1109/Tthz.2018.2840078 |
0.419 |
|
| 2018 |
Tang A, Kim Y, Reck T, Tang Y, Xu Y, Chattopadhyay G, Drouin B, Mehdi I, Chang MF. A 177–205 GHz 249 mW CMOS-Based Integer-N Frequency Synthesizer Module for Planetary Exploration Ieee Transactions On Terahertz Science and Technology. 8: 251-254. DOI: 10.1109/Tthz.2017.2786693 |
0.487 |
|
| 2018 |
Nemchick DJ, Drouin BJ, Tang AJ, Kim Y, Chang MF. Sub-Doppler Spectroscopy With a CMOS Transmitter Ieee Transactions On Terahertz Science and Technology. 8: 121-126. DOI: 10.1109/Tthz.2017.2773365 |
0.441 |
|
| 2018 |
Kim Y, Reck TJ, Alonso-delPino M, Painter TH, Marshall H, Bair EH, Dozier J, Chattopadhyay G, Liou K, Chang MF, Tang A. A
$K_{{u}}$
-Band CMOS FMCW Radar Transceiver for Snowpack Remote Sensing Ieee Transactions On Microwave Theory and Techniques. 66: 2480-2494. DOI: 10.1109/Tmtt.2018.2799866 |
0.463 |
|
| 2018 |
Wang XS, Jin X, Du J, Li Y, Du Y, Wong C, Kuan Y, Chan C, Chang MF. A 2-GS/s 8-Bit ADC Featuring Virtual-Ground Sampling Interleaved Architecture in 28-nm CMOS Ieee Transactions On Circuits and Systems Ii: Express Briefs. 65: 1534-1538. DOI: 10.1109/Tcsii.2017.2758323 |
0.435 |
|
| 2018 |
Du L, Du Y, Li Y, Su J, Kuan Y, Liu C, Chang MF. A Reconfigurable Streaming Deep Convolutional Neural Network Accelerator for Internet of Things Ieee Transactions On Circuits and Systems I: Regular Papers. 65: 198-208. DOI: 10.1109/Tcsi.2017.2735490 |
0.34 |
|
| 2018 |
Du L, Liu C, Zhang Y, Li Y, Du Y, Kuan Y, Chang MF. A Single Layer 3-D Touch Sensing System for Mobile Devices Application Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 37: 286-296. DOI: 10.1109/Tcad.2017.2702630 |
0.333 |
|
| 2018 |
Li Y, Dhwaj K, Wong C, Du Y, Du L, Tang Y, Shi Y, Itoh T, Chang MF. A Novel Fully Synthesizable All-Digital RF Transmitter for IoT Applications Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 37: 146-158. DOI: 10.1109/Tcad.2017.2684097 |
0.47 |
|
| 2018 |
Hu B, Kim Y, Huang R, Du Y, Chang MF. A 32-Gb/s C2C-DAC-Based PAM-4 Wireline Transmitter With Two-Tap Feed-Forward Equalization and Level-Mismatch Correction in 28-nm CMOS Ieee Microwave and Wireless Components Letters. 28: 1056-1058. DOI: 10.1109/Lmwc.2018.2870931 |
0.42 |
|
| 2017 |
Hu B, Du Y, Huang R, Lee J, Chen Y, Chang MF. An R2R-DAC-Based Architecture for Equalization-Equipped Voltage-Mode PAM-4 Wireline Transmitter Design Ieee Transactions On Very Large Scale Integration Systems. 25: 3260-3264. DOI: 10.1109/Tvlsi.2017.2737523 |
0.416 |
|
| 2017 |
Tang A, Drouin B, Kim Y, Virbila G, Chang MF. 95–105 GHz 352 mW All-Silicon Cavity-Coupled Pulsed Echo Rotational Spectroscopy System in 65 nm CMOS Ieee Transactions On Terahertz Science and Technology. 7: 244-249. DOI: 10.1109/Tthz.2017.2692041 |
0.444 |
|
| 2017 |
Hu B, Du Y, Huang R, Lee J, Chen Y, Chang MF. A Capacitor-DAC-Based Technique For Pre-Emphasis-Enabled Multilevel Transmitters Ieee Transactions On Circuits and Systems Ii-Express Briefs. 64: 1012-1016. DOI: 10.1109/Tcsii.2016.2619623 |
0.4 |
|
| 2017 |
Du L, Zhang Y, Liu C, Tang A, Hsiao F, Chang MF. A 2.3-mW 11-cm Range Bootstrapped and Correlated-Double-Sampling Three-Dimensional Touch Sensing Circuit for Mobile Devices Ieee Transactions On Circuits and Systems Ii: Express Briefs. 64: 96-100. DOI: 10.1109/Tcsii.2016.2554218 |
0.406 |
|
| 2017 |
Kim Y, Tam S, Itoh T, Chang MF. A 60-GHz CMOS Transceiver With On-Chip Antenna and Periodic Near Field Directors for Multi-Gb/s Contactless Connector Ieee Microwave and Wireless Components Letters. 27: 404-406. DOI: 10.1109/Lmwc.2017.2678444 |
0.588 |
|
| 2017 |
Chen Z, Kuan Y, Li Y, Hu B, Wong C, Chang MF. DPLL for Phase Noise Cancellation in Ring Oscillator-Based Quadrature Receivers Ieee Journal of Solid-State Circuits. 52: 1134-1143. DOI: 10.1109/Jssc.2017.2647925 |
0.321 |
|
| 2017 |
Du Y, Cho W, Huang P, Li Y, Wong C, Du J, Kim Y, Hu B, Du L, Liu C, Lee SJ, Chang MF. A 16-Gb/s 14.7-mW Tri-Band Cognitive Serial Link Transmitter With Forwarded Clock to Enable PAM-16/256-QAM and Channel Response Detection Ieee Journal of Solid-State Circuits. 52: 1111-1122. DOI: 10.1109/Jssc.2016.2628049 |
0.44 |
|
| 2017 |
Kim Y, Cho W, Du Y, Cong J, Itoh T, Chang MF. Impulse response analysis of carrier-modulated multiband RF-interconnect (MRFI) Analog Integrated Circuits and Signal Processing. 93: 395-413. DOI: 10.1007/S10470-017-1058-4 |
0.366 |
|
| 2016 |
Tang A, Kim Y, Chang MF. A 65 nm CMOS 330 Mb/s Microwave Backscatter Link at 2.4 to 2.9 GHz With Ambient Blocker Cancellation Ieee Microwave and Wireless Components Letters. 26: 61-63. DOI: 10.1109/Lmwc.2015.2505650 |
0.493 |
|
| 2015 |
Xu Z, Gu QJ, Wu Y, Chang MF. Integrated D-band transmitter and receiver for wireless data communication in 65 nm CMOS Analog Integrated Circuits and Signal Processing. 82: 171-179. DOI: 10.1007/S10470-014-0379-9 |
0.461 |
|
| 2014 |
Wang XS, Wang X, Lu F, Zhang C, Dong Z, Wang L, Ma R, Shi Z, Wang A, Chang MF, Wang D, Joseph A, Yue CP. Concurrent Design Analysis of High-Linearity SP10T Switch With 8.5 kV ESD Protection Ieee Journal of Solid-State Circuits. 49: 1927-1941. DOI: 10.1109/Jssc.2014.2331956 |
0.481 |
|
| 2013 |
D'Souza S, Hsiao F, Tang A, Tam S, Berenguer R, Chang MF. A 10-Bit 2-GS/s DAC-DDFS-IQ-Controller Baseband Enabling a Self-Healing 60-GHz Radio-on-Chip Ieee Transactions On Circuits and Systems Ii: Express Briefs. 60: 457-461. DOI: 10.1109/Tcsii.2013.2268325 |
0.742 |
|
| 2013 |
Lu C, Hsiao C, Lin Y, Chang MF. A 10-Bit DAC With 1.6-Bit Interpolation Cells for Compact LCD Column Driver ICs Ieee\/Osa Journal of Display Technology. 9: 176-183. DOI: 10.1109/Jdt.2012.2236679 |
0.397 |
|
| 2012 |
Gu QJ, Xu Z, Jian H, Pan B, Xu X, Chang MF, Liu W, Fetterman H. CMOS THz Generator With Frequency Selective Negative Resistance Tank Ieee Transactions On Terahertz Science and Technology. 2: 193-202. DOI: 10.1109/Tthz.2011.2181922 |
0.601 |
|
| 2012 |
Tang A, Murphy D, Hsiao F, Virbila G, Wang Y, Wu H, Kim Y, Chang MF. A $D$-Band CMOS Transmitter With IF-Envelope Feed-Forward Pre-Distortion and Injection-Locked Frequency-Tripling Synthesizer Ieee Transactions On Microwave Theory and Techniques. 60: 4129-4137. DOI: 10.1109/Tmtt.2012.2222916 |
0.453 |
|
| 2012 |
Liu JY, Berenguer R, Chang MF. Millimeter-Wave Self-Healing Power Amplifier With Adaptive Amplitude and Phase Linearization in 65-nm CMOS Ieee Transactions On Microwave Theory and Techniques. 60: 1342-1352. DOI: 10.1109/Tmtt.2012.2189119 |
0.46 |
|
| 2012 |
Chien C, Tang A, Hsiao F, Chang MF. Dual-Control Self-Healing Architecture for High-Performance Radio SoCs Ieee Design & Test of Computers. 29: 40-51. DOI: 10.1109/Mdt.2012.2213571 |
0.34 |
|
| 2012 |
Gu QJ, Xu Z, Tang A, Chang MF. A D-Band Passive Imager in 65 nm CMOS Ieee Microwave and Wireless Components Letters. 22: 263-265. DOI: 10.1109/Lmwc.2012.2192720 |
0.455 |
|
| 2012 |
Lu J, Wang N, Chang MF. A Compact and Low Power 5–10 GHz Quadrature Local Oscillator for Cognitive Radio Applications Ieee Journal of Solid-State Circuits. 47: 1131-1140. DOI: 10.1109/Jssc.2012.2185573 |
0.617 |
|
| 2012 |
Byun G, Kim Y, Kim J, Tam S, Chang MF. An Energy-Efficient and High-Speed Mobile Memory I/O Interface Using Simultaneous Bi-Directional Dual (Base+RF)-Band Signaling Ieee Journal of Solid-State Circuits. 47: 117-130. DOI: 10.1109/Jssc.2011.2164709 |
0.711 |
|
| 2011 |
Kim J, Byun G, Chang MF. A low-overhead and low-power rf transceiver for short-distance on- and off-chip interconnects Ieice Transactions On Electronics. 854-857. DOI: 10.1587/Transele.E94.C.854 |
0.712 |
|
| 2011 |
Liu JY, Chang MF. A 60 GHz High Gain Transformer-Coupled Differential Cascode Power Amplifier in 65 nm CMOS Ieice Transactions On Electronics. 94: 1508-1514. DOI: 10.1587/Transele.E94.C.1508 |
0.47 |
|
| 2011 |
Gu QJ, Jian H, Xu Z, Wu Y, Chang MF, Baeyens Y, Chen Y. CMOS Prescaler(s) With Maximum 208-GHz Dividing Speed and 37-GHz Time-Interleaved Dual-Injection Locking Range Ieee Transactions On Circuits and Systems Ii-Express Briefs. 58: 393-397. DOI: 10.1109/Tcsii.2011.2158267 |
0.635 |
|
| 2011 |
Tang A, Virbila G, LaRocca T, Chang MF. A 75-110 GHz digitally-probed artificial dielectric phase demodulator in 65nm CMOS Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2011.5972572 |
0.402 |
|
| 2011 |
Tam SW, Chang MF, Kim J. Wireline and wireless RF-interconnect for next generation SoC systems Midwest Symposium On Circuits and Systems. DOI: 10.1109/MWSCAS.2011.6026279 |
0.343 |
|
| 2011 |
Tang A, Gu Q, Chang M. CMOS receivers for active and passive mm-wave imaging Ieee Communications Magazine. 49: 190-198. DOI: 10.1109/Mcom.2011.6035835 |
0.316 |
|
| 2011 |
Xu Z, Gu QJ, Chang MF. A Three Stage, Fully Differential 128–157 GHz CMOS Amplifier with Wide Band Matching Ieee Microwave and Wireless Components Letters. 21: 550-552. DOI: 10.1109/Lmwc.2011.2163928 |
0.514 |
|
| 2011 |
Liu JY, Gu QJ, Tang A, Wang N, Chang MF. A 60 GHz Tunable Output Profile Power Amplifier in 65 nm CMOS Ieee Microwave and Wireless Components Letters. 21: 377-379. DOI: 10.1109/Lmwc.2011.2152386 |
0.463 |
|
| 2011 |
Wang NY, Wu H, Liu JYC, Chang MF. 65 nm CMOS receiver with 4.2 dB NF and 66 dB gain for 60 GHz applications Electronics Letters. 47: 15-17. DOI: 10.1049/El.2010.3094 |
0.434 |
|
| 2011 |
Tam S, Chang MF. RF/wireless-interconnect: The next wave of connectivity Science in China Series F: Information Sciences. 54: 1026-1038. DOI: 10.1007/S11432-011-4225-8 |
0.607 |
|
| 2010 |
Yu AH, Tam S, Kim Y, Socher E, Hant W, Chang MF, Itoh T. A Dual-Band Millimeter-Wave CMOS Oscillator With Left-Handed Resonator Ieee Transactions On Microwave Theory and Techniques. 58: 1401-1409. DOI: 10.1109/Tmtt.2010.2042854 |
0.577 |
|
| 2006 |
Chen M, Wu Y, Chang MF. Active 2nd-order intermodulation calibration for direct-conversion receivers Digest of Technical Papers - Ieee International Solid-State Circuits Conference. |
0.36 |
|
| 2005 |
Hu T, Chang MF, Weimann N, Chen J, Chen Y. Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers Applied Physics Letters. 86: 143508. DOI: 10.1063/1.1891270 |
0.536 |
|
| 2004 |
Yu KW, Lu YL, Chang DC, Liang V, Chang MF. K-Band Low-Noise Amplifiers Using 0.18 μm CMOS Technology Ieee Microwave and Wireless Components Letters. 14: 106-108. DOI: 10.1109/Lmwc.2004.825175 |
0.477 |
|
| 2004 |
Yu KW, Chang MF. CMOS K-Band LNAs design counting both interconnect transmission line and RF pad parasitics Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers. 101-104. |
0.37 |
|
| 2003 |
Shin H, Xu Z, Chang MF. A 1.8-V 6/9-GHz reconfigurable dual-band quadrature LC VCO in SiGe BiCMOS technology Ieee Journal of Solid-State Circuits. 38: 1028-1032. DOI: 10.1109/Jssc.2003.811970 |
0.501 |
|
| 2003 |
Jiang X, Wang Z, Chang MF. A 2GS/s 6b ADC in 0.18μm CMOS Digest of Technical Papers - Ieee International Solid-State Circuits Conference. |
0.316 |
|
| 2002 |
Shin H, Chang MF. 1.1 Gbit/s RF-interconnect based on 10 GHz RF-modulation in 0.18 μm CMOS Electronics Letters. 38: 71-72. DOI: 10.1049/el:20020052 |
0.408 |
|
| 2002 |
Wu YC, Chang MF. On-chip RF spiral inductors and bandpass filters using active magnetic energy recovery Proceedings of the Custom Integrated Circuits Conference. 275-278. |
0.337 |
|
| 2002 |
Shin H, Xu Z, Chang MF. A 1.8-V 6/9-GHz switchable dual-band quadrature LC VCO in SiGe BiCMOS technology Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers. 71-74. |
0.401 |
|
| 2002 |
Shin H, Xu Z, Chang MF. RF-interconnect for multi-Gb/s digital interface based on 10-GHz RF-modulation in 0.18μm CMOS Ieee Mtt-S International Microwave Symposium Digest. 1: 477-480. |
0.366 |
|
| 2001 |
Huang C, Lee C, Huang R, Chang MF. Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors Japanese Journal of Applied Physics. 40: 6761-6763. DOI: 10.1143/Jjap.40.6761 |
0.346 |
|
| 2000 |
Ma P, Yang Y, Zampardi P, Huang RT, Chang MF. Modulating HBT's current gain by using externally biased on-ledge Schottky diode [GaAs devices] Ieee Electron Device Letters. 21: 373-375. DOI: 10.1109/55.852954 |
0.403 |
|
| 2000 |
Tseng PD, Zhang L, Gao GB, Chang MF. 3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applications Ieee Journal of Solid-State Circuits. 35: 1338-1344. DOI: 10.1109/4.868045 |
0.302 |
|
| 1999 |
Ma P, Zampardi P, Zhang L, Chang MF. Determining the effectiveness of HBT emitter ledge passivation by using an on-ledge Schottky diode potentiometer Ieee Electron Device Letters. 20: 460-462. DOI: 10.1109/55.784452 |
0.342 |
|
| 1999 |
Qian Y, Chang BCC, Chang MF, Itoh T. Reconfigurable leaky-mode/multifunction patch antenna structure Electronics Letters. 35: 104-105. DOI: 10.1049/El:19990090 |
0.34 |
|
| 1998 |
Chang MF, Qian Y, Ma P, Itoh T. Silicon/metal/polyimide (SIMPOL) interconnects for broadband mixed signal silicon MMICs Electronics Letters. 34: 1670-1671. DOI: 10.1049/El:19981155 |
0.366 |
|
| 1997 |
Chang MF. Heterojunction BiFET technology for high speed electronic systems Advanced Workshop On Frontiers in Electronics, Proceedings, Wofe. 15-20. |
0.38 |
|
| 1995 |
Ho MC, Johnson RA, Asbeck PM, Ho WJ, Chang MF. High-Performance Low-Base-Collector Capacitance AlGaAs/GaAs Heterojunction Bipolar Transistors Fabricated by Deep Ion Implantation Ieee Electron Device Letters. 16: 512-514. DOI: 10.1109/55.468284 |
0.33 |
|
| 1995 |
Waldrop JR, Chang MF. Negative Differential Resistance of AlGaAs/GaAs Heterojunction Bipolar Transistors: Influence of Emitter Edge Current Ieee Electron Device Letters. 16: 8-10. DOI: 10.1109/55.363216 |
0.309 |
|
| 1995 |
Yu J, Beccue S, Ho WJ, Zampardi P, Chang MF, Wang KC. 10 bit 200 MSPS GaAs BiFET sample and hold circuit Electronics Letters. 31: 1335-1337. DOI: 10.1049/El:19950947 |
0.436 |
|
| 1995 |
Zampardi PJ, Beccue SM, Yu J, Pedrotti K, Pierson RL, Ho WJ, Chang MF, Wang KC. Circuit demonstrations in a GaAs BiFET technology Solid State Electronics. 38: 1723-1726. DOI: 10.1016/0038-1101(95)00039-V |
0.448 |
|
| 1995 |
Chang MF. Manufacturable GaAs BiFET technology for high speed signal processing Conference Proceedings of the International Symposium On Signals, Systems and Electronics. 279-282. |
0.349 |
|
| 1994 |
ASBECK P, CHANG M, PEDROTTI K. FUTURE DIRECTIONS FOR HBT DEVELOPMENT International Journal of High Speed Electronics and Systems. 5: 493-527. DOI: 10.1142/S0129156494000206 |
0.344 |
|
| 1994 |
Asbeck PM, Chang MF, Wang KC, Sullivan GJ. Heterojunction Bipolar Transistors in III—V Semiconductors Vlsi Electronics Microstructure Science. 24: 107-155. DOI: 10.1016/B978-0-12-234124-3.50009-4 |
0.364 |
|
| 1993 |
Ho WJ, Chang MF, Wang KC, Higgins JA. High Frequency AlGaAs/GaAs HBT The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1993.D-8-1 |
0.353 |
|
| 1993 |
Ho WJ, Chang MF, Sailer A, Zampardi P, Deakin D, McDermott B, Pierson R, Higgins JA, Waldrop J. GaInP/GaAs HBTs for high-speed integrated circuit applications Ieee Electron Device Letters. 14: 572-574. DOI: 10.1109/55.260793 |
0.459 |
|
| 1993 |
Pedrotti KD, Pierson RL, Sheng NH, Nubling RB, Farley CW, Chang MF. High-bandwidth OEIC receivers using heterojunction bipolar transistors. Design and demonstration Journal of Lightwave Technology. 11: 1601-1614. DOI: 10.1109/50.249902 |
0.466 |
|
| 1993 |
Zampardi PJ, Beccue SM, Pedrotti KD, Pierson RL, Chang MF, Wang KC, Cheskis D, Chang CE, Asbeck PM. Monolithically integrated HBT/MESFET circuit Electronics Letters. 29: 1100-1102. DOI: 10.1049/El:19930734 |
0.426 |
|
| 1991 |
Asbeck PM, Chang MF, Wang KC, Sullivan GJ, Higgins JA. GaAlAs/GaAs heterojunction bipolar transistors. Issues and prospects for application Conference On Solid State Devices and Materials. 71-73. DOI: 10.7567/Ssdm.1991.C-1-1 |
0.492 |
|
| 1991 |
Wang G-, Pierson RL, Asbeck PM, Wang K-, Wang N-, Nubling R, Chang MF, Salerno J, Sastry S. High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base Ieee Electron Device Letters. 12: 347-349. DOI: 10.1109/55.82083 |
0.413 |
|
| 1991 |
Pedrotti KD, Pierson RL, Nubling RB, Farley CW, Sovero EA, Chang MF. VA-2 Ultra-High Speed p-i-n/HBT Monolithic OEIC Photoreceiver Ieee Transactions On Electron Devices. 38: 2713-2714. DOI: 10.1109/16.158745 |
0.403 |
|
| 1990 |
Chang MF, Wang N, Asbeck PM, Ho W, Sheng N, Higgins JA, Sullivan GJ. Self-aligned AlGaAs/GaAs heterojunction bipolar transistors for microwave power amplification The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1990.B-2-2 |
0.368 |
|
| 1990 |
Chang MF, Asbeck PM. Iii-V Heterojunction Bipolar Transistors For High-Speed Applications International Journal of High Speed Electronics and Systems. 1: 245-301. DOI: 10.1142/S0129156490000137 |
0.399 |
|
| 1990 |
Sullivan GJ, Chang MF, Sheng N-, Anderson RJ, Wang N-, Wang K-, Higgins JA, Asbeck PM. AlGaAs/GaAs P-n-p HBTs with high maximum frequency of oscillation Ieee Electron Device Letters. 11: 463-465. DOI: 10.1109/55.62997 |
0.362 |
|
| 1990 |
Asbeck PM, Wang KC, Chang MF, Sullivan GJ. Application of heterojunction bipolar transistor integrated circuits in high speed lightwave systems Technical Digest Series. 68. |
0.352 |
|
| 1989 |
Farley C, Chang M, Asbeck P, Wang K, Sheng N, Pierson R, Nubling R. High performance AlInAs/GaInAs HBTs for high speed, low power digital circuits Ieee Transactions On Electron Devices. 36: 2601-2602. DOI: 10.1109/16.43696 |
0.488 |
|
| 1989 |
Wang KC, Asbeck PM, Chang MF, Sullivan GJ, Miller DL, Basit HF. Noninterfering optical method of HBT circuit evaluation Electronics Letters. 25: 1111-1112. DOI: 10.1049/El:19890745 |
0.369 |
|
| 1987 |
Asbeck PM, Chang MF, Wang K-, Miller DL, Sullivan GJ, Sheng NH, Sovero E, Higgins JA. Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits Ieee Transactions On Microwave Theory and Techniques. 35: 1462-1468. DOI: 10.1109/Tmtt.1987.1133876 |
0.454 |
|
| 1987 |
Chang M, Asbeck P, Wang K, Sullivan G, Miller D, Sheng N, Higgens J. IVA-1 self-aligned AlGaAs/GaAs heterojunction bipolar transistors with improved high-speed performance Ieee Transactions On Electron Devices. 34: 2369-2369. DOI: 10.1109/T-Ed.1987.23277 |
0.329 |
|
| 1987 |
Wang KC, Asbeck PM, Chang MF, Sullivan GJ, Miller DL. A 20-GHz Frequency Divider Implemented with Heterojunction Bipolar Transistors Ieee Electron Device Letters. 8: 383-385. DOI: 10.1109/Edl.1987.26668 |
0.41 |
|
| 1986 |
Sheng NH, Chang MF, Lee CP, Miller DL, Chen RT. Close drain—Source self-aligned high electron mobility transistors Ieee Electron Device Letters. 7: 11-12. DOI: 10.1109/Edl.1986.26275 |
0.327 |
|
| 1986 |
Chang MF, Asbeck PM, Miller DL, Wang KC. GaAs/(GaA1)As Heterojunction Bipolar Transistors Using a Self-Aligned Substitutional Emitter Process Ieee Electron Device Letters. 7: 8-10. DOI: 10.1109/Edl.1986.26274 |
0.347 |
|
| 1986 |
Chang MF, Asbeck PM, Wang KC, Sullivan GJ, Miller DL. AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performance Electronics Letters. 22: 1173-1174. DOI: 10.1049/El:19860803 |
0.465 |
|
| 1985 |
Chang MF, Lee SJ, Walton ER, Lee CP, Ryan FJ, Vahrenkamp RP, Kirkpatrick CG. High-speed GaAs frequency dividers using a self-aligned dual-level double lift-off substitution gate MESFET process Ieee Electron Device Letters. 6: 279-281. DOI: 10.1109/Edl.1985.26125 |
0.476 |
|
| 1985 |
Lee CP, Chang MF. Shielding of Backgating Effects in GaAs Integrated Circuits Ieee Electron Device Letters. 6: 169-171. DOI: 10.1109/Edl.1985.26085 |
0.341 |
|
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