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Nola S. Li, Ph.D. - Publications

Affiliations: 
2009 Georgia Institute of Technology, Atlanta, GA 
Area:
Electronics and Electrical Engineering
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32 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Li N, Wang S, Fenwick WE, Melton A, Huang C, Feng ZC, Summers C, Jamil M, Ferguson I. Al 2 O 3 as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD Mrs Proceedings. 1201. DOI: 10.1557/Proc-1201-H06-02  0.604
2009 Li N, Fenwick W, Melton A, Hung IH, Feng ZC, Summers C, Jamil M, Ferguson I. III-nitride epilayers on ZnO substrates by MOCVD using Al2O 3 as a transition layer Proceedings of Spie - the International Society For Optical Engineering. 7422. DOI: 10.1117/12.829482  0.675
2009 Fenwick W, Melton A, Li N, Xu T, Summers C, Jamil M, Ferguson I. MOCVD growth of GaN on Si substrates using an ALD-grown Al 2O3 interlayer Proceedings of Spie - the International Society For Optical Engineering. 7422. DOI: 10.1117/12.828462  0.621
2009 Hung I, Lan Y, Wu TH, Feng ZC, Li N, Yu H, Ferguson IT, Lu W. Nanoscale InGaN/GaN on ZnO substrate for LED applications Proceedings of Spie. 7422. DOI: 10.1117/12.825851  0.563
2009 Wang S, Li N, Yu HB, Feng ZC, Summers C, Ferguson I. Metalorganic chemical vapour deposition of GaN layers on ZnO substrates using α-Al2O3 as a transition layer Journal of Physics D. 42: 245302. DOI: 10.1088/0022-3727/42/24/245302  0.667
2009 Fenwick WE, Melton A, Xu T, Li N, Summers C, Jamil M, Ferguson IT. Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer Applied Physics Letters. 94. DOI: 10.1063/1.3148328  0.609
2009 Li N, Wang S, Park E, Feng ZC, Tsai H, Yang J, Ferguson I. Suppression of phase separation in InGaN layers grown on lattice-matched ZnO substrates Journal of Crystal Growth. 311: 4628-4631. DOI: 10.1016/J.Jcrysgro.2009.09.004  0.527
2009 Fenwick WE, Li N, Xu T, Melton A, Wang S, Yu H, Summers C, Jamil M, Ferguson IT. MOCVD growth of GaN on Si(1 1 1) substrates using an ALD-grown Al2O3 interlayer Journal of Crystal Growth. 311: 4306-4310. DOI: 10.1016/J.Jcrysgro.2009.07.022  0.63
2008 Zaidi T, Jamil M, Melton A, Li N, Fenwick WE, Ferguson IT. NH 3 Doping in MOCVD Growth of ZnO Thin Films Mrs Proceedings. 1109. DOI: 10.1557/Proc-1109-B06-01  0.424
2008 Yu H, Wang S, Li N, Fenwick W, Melton A, Kane MH, Klein B, Ferguson I. MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications Proceedings of Spie. 7058. DOI: 10.1117/12.798540  0.508
2008 Li N, Wang S, Huang C, Feng ZC, Valencia A, Nause J, Summers C, Ferguson I. Metalorganic Chemical Vapor Deposition of GaN and InGaN on ZnO Substrate using Al 2 O 3 as a Transition Layer Proceedings of Spie. 7058. DOI: 10.1117/12.797946  0.659
2008 Zaidi T, Fenwick WE, Melton A, Li N, Gupta S, Yu H, Ougazzaden A, Ferguson I. Effects of N doping on ZnO thin films grown by MOVPE Journal of Crystal Growth. 310: 5011-5015. DOI: 10.1016/J.Jcrysgro.2008.07.124  0.422
2008 Li N, Wang S, Huang C, Feng ZC, Valencia A, Nause J, Summers C, Ferguson I. Effect of an Al2O3 transition layer on InGaN on ZnO substrates by organometallic vapor-phase epitaxy Journal of Crystal Growth. 310: 4908-4912. DOI: 10.1016/J.Jcrysgro.2008.07.087  0.672
2008 Yu H, Wang S, Li N, Fenwick W, Melton A, Klein B, Ferguson I. MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications Journal of Crystal Growth. 310: 4904-4907. DOI: 10.1016/J.Jcrysgro.2008.07.071  0.487
2008 Wang S, Li N, Park E, Feng ZC, Valencia A, Nause J, Kane M, Summers C, Ferguson I. MOCVD growth of GaN‐based materials on ZnO substrates Physica Status Solidi (C). 5: 1736-1739. DOI: 10.1002/Pssc.200778614  0.501
2007 Li N, Wang S, Nause J, Valencia A, Summers C, Ferguson I. InGaN Layers Grown on Al2O3/ZnO Substrates Prepared by Atomic Layer Deposition Mrs Proceedings. 1035. DOI: 10.1557/Proc-1035-L11-23  0.618
2007 Zhang B, Zhou Z, Li N, Ferguson IT. Enhancement of light extraction of GaN light-emitting diode using opals layer Proceedings of Spie. 6669. DOI: 10.1117/12.760787  0.385
2007 Li N, Wang S, Park E, Feng ZC, Valencia A, Nause J, Summers C, Ferguson I. Growth of InGaN with high indium content on ZnO based sacrificial substrates Proceedings of Spie. 6669. DOI: 10.1117/12.741932  0.558
2007 Lee ZS, Feng ZC, Li AG, Tsai HL, Yang JR, Chen YF, Li N, Ferguson IT, Lu W. Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 6669. DOI: 10.1117/12.741718  0.428
2007 Wang S, Li N, Park E, Lien S, Feng ZC, Valencia A, Nause J, Ferguson I. Metalorganic chemical vapor deposition of InGaN layers on ZnO substrates Journal of Applied Physics. 102: 106105. DOI: 10.1063/1.2817482  0.551
2007 Kane MH, Gupta S, Fenwick WE, Li N, Park E, Strassburg M, Ferguson IT. Comparative study of Mn and Fe incorporation into GaN by metalorganic chemical vapor deposition Physica Status Solidi (a). 204: 61-71. DOI: 10.1002/Pssa.200673006  0.379
2006 Fenwick WE, Kane MH, Fang Z, Zaidi T, Li N, Rengarajan V, Nause J, Ferguson IT. Transition Metal-Doped ZnO: A Comparison of Optical, Magnetic, and Structural Behavior of Bulk and Thin Films Mrs Proceedings. 957. DOI: 10.1557/Proc-0957-K04-10  0.425
2006 Kane MH, Fenwick W, Li N, Gupta S, Park EH, Ferguson IT. Comparison of the Incorporation of Various Transition Metals into GaN by MOCVD Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I07-04  0.384
2006 Li N, Park E, Huang Y, Wang S, Valencia A, Nemeth B, Nause J, Ferguson I. Growth of GaN on ZnO for Solid State Lighting Applications Proceedings of Spie. 6337. DOI: 10.1117/12.696645  0.486
2006 Pan M, Fenwick W, Strassburg M, Li N, Kang H, Kane M, Asghar A, Gupta S, Varatharajan R, Nause J, El-Zein N, Fabiano P, Steiner T, Ferguson I. Metal-organic chemical vapor deposition of ZnO Journal of Crystal Growth. 287: 688-693. DOI: 10.1016/J.Jcrysgro.2005.10.093  0.414
2005 Gupta S, Kang H, Kane M, Fenwick WE, Li N, Strassburg M, Asghar A, Dietz N, Ferguson IT. Metal Organic Chemical Vapor Deposition Growth of GaN and GaMnN Multifunctional Nanostructures Mrs Proceedings. 901. DOI: 10.1557/Proc-0901-Ra13-04  0.408
2005 Senawiratne J, Strassburg M, Payne A, Asghar A, Fenwick W, Li N, Ferguson I, Dietz N. Cu Induced Optical Transitions in MOCVD Grown Cu Doped GaN Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff23-08  0.337
2005 Fenwick WE, Woods VT, Pan M, Li N, Kane MH, Gupta S, Rengarajan V, Nause J, Ferguson IT. Metal Organic Chemical Vapor Deposition of Zinc Oxide Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff18-07-Ee09-07  0.417
2005 Li N, Fenwick WE, Strassburg M, Asghar A, Gupta S, Kang H, Summers C, Ferguson IT. Structural, Optical, and Magnetic Behavior of in-situ Doped, MOCVD-Grown Ga 1-x Mn x N Epilayers and Heterostructures Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff07-04-Ee05-04  0.497
2005 Nicol D, Gupta S, Li N, Asghar A, Graugnard E, Summers C, Ferguson I. Towards a Novel Broadband Spectrally Dynamic Solid State Light Source Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff01-08  0.527
2005 Nause J, Pan M, Rengarajan V, Nemeth W, Ganesan S, Payne A, Li N, Ferguson I. ZnO semiconductors for lighting Proceedings of Spie. 5941: 75-82. DOI: 10.1117/12.624534  0.437
1996 Liao LS, Bao XM, Li NS, Zheng XQ, Min NB. Visible electroluminescence from Si+-implanted SiO2 films thermally grown on crystalline Si Solid State Communications. 97: 1039-1042.  0.327
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