| Year |
Citation |
Score |
| 2020 |
Claflin B, Grzybowski GJ, Ware ME, Zollner S, Kiefer AM. Process for Growth of Group-IV Alloys Containing Tin by Remote Plasma Enhanced Chemical Vapor Deposition Frontiers in Materials. 7. DOI: 10.3389/Fmats.2020.00044 |
0.461 |
|
| 2020 |
Samarasingha NS, Zollner S, Pal D, Singh R, Chattopadhyay S. Thickness dependence of infrared lattice absorption and excitonic absorption in ZnO layers on Si and SiO2 grown by atomic layer deposition Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 42201. DOI: 10.1116/6.0000184 |
0.464 |
|
| 2020 |
Emminger C, Abadizaman F, Samarasingha NS, Tiwald TE, Zollner S. Temperature dependent dielectric function and direct bandgap of Ge Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 12202. DOI: 10.1116/1.5129685 |
0.387 |
|
| 2019 |
Faul J, Neuhold G, Ley L, Fraxedas J, Zollner S, Riley JD, Leckey RC. Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center. Physical Review. B, Condensed Matter. 48: 14301-14308. PMID 10007847 DOI: 10.1103/Physrevb.48.14301 |
0.395 |
|
| 2019 |
Faul J, Neuhold G, Ley L, Fraxedas J, Zollner S, Riley JD, Leckey RC. Determination of conduction-band states in GaAs(110), InP(110), and InAs(110). Physical Review. B, Condensed Matter. 47: 12625-12635. PMID 10005457 DOI: 10.1103/Physrevb.47.12625 |
0.389 |
|
| 2019 |
Faul J, Neuhold G, Ley L, Fraxedas J, Zollner S, Riley JD, Leckey RC. Conduction-band states and surface core excitons in InSb(110) and other III-V compounds. Physical Review. B, Condensed Matter. 50: 7384-7388. PMID 9974716 DOI: 10.1103/Physrevb.50.7384 |
0.376 |
|
| 2019 |
Abadizaman F, Zollner S. Optical constants of polycrystalline Ni from 0.06 to 6.0 eV at 300 K Journal of Vacuum Science & Technology B. 37: 62920. DOI: 10.1116/1.5118841 |
0.398 |
|
| 2019 |
Mathur A, Pal D, Singh A, Singh R, Zollner S, Chattopadhyay S. Dual ion beam grown silicon carbide thin films: Variation of refractive index and bandgap with film thickness Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 41802. DOI: 10.1116/1.5097628 |
0.47 |
|
| 2019 |
Zollner S, Paradis PP, Abadizaman F, Samarasingha NS. Drude and Kukharskii mobility of doped semiconductors extracted from Fourier-transform infrared ellipsometry spectra Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 12904. DOI: 10.1116/1.5081055 |
0.402 |
|
| 2019 |
Espinoza S, Richter S, Rebarz M, Herrfurth O, Schmidt-Grund R, Andreasson J, Zollner S. Transient dielectric functions of Ge, Si, and InP from femtosecond pump-probe ellipsometry Applied Physics Letters. 115: 52105. DOI: 10.1063/1.5109927 |
0.457 |
|
| 2019 |
Carrasco RA, Zollner S, Chastang SA, Duan J, Grzybowski GJ, Claflin BB, Kiefer AM. Dielectric function and band structure of Sn1−xGex (x < 0.06) alloys on InSb Applied Physics Letters. 114: 062102. DOI: 10.1063/1.5086742 |
0.485 |
|
| 2018 |
Fernando NS, Carrasco RA, Hickey R, Hart J, Hazbun R, Schoeche S, Hilfiker JN, Kolodzey J, Zollner S. Band gap and strain engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs for photonic applications Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 21202. DOI: 10.1116/1.5001948 |
0.796 |
|
| 2018 |
Carrasco RA, Zamarripa CM, Zollner S, Menéndez J, Chastang SA, Duan J, Grzybowski GJ, Claflin BB, Kiefer AM. The direct bandgap of gray α-tin investigated by infrared ellipsometry Applied Physics Letters. 113: 232104. DOI: 10.1063/1.5053884 |
0.591 |
|
| 2018 |
Imbrenda D, Hickey R, Carrasco RA, Fernando NS, VanDerslice J, Zollner S, Kolodzey J. Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy Applied Physics Letters. 113: 122104. DOI: 10.1063/1.5040853 |
0.809 |
|
| 2017 |
Xu C, Fernando NS, Zollner S, Kouvetakis J, Menéndez J. Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n-Type Ge. Physical Review Letters. 118: 267402. PMID 28707902 DOI: 10.1103/Physrevlett.118.267402 |
0.786 |
|
| 2017 |
Hickey R, Fernando N, Zollner S, Hart J, Hazbun R, Kolodzey J. Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 21205. DOI: 10.1116/1.4975149 |
0.796 |
|
| 2017 |
Pal D, Mathur A, Singh A, Singhal J, Sengupta A, Dutta S, Zollner S, Chattopadhyay S. Tunable optical properties in atomic layer deposition grown ZnO thin films Journal of Vacuum Science and Technology. 35. DOI: 10.1116/1.4967296 |
0.489 |
|
| 2017 |
Pal D, Singhal J, Mathur A, Singh A, Dutta S, Zollner S, Chattopadhyay S. Effect of substrates and thickness on optical properties in atomic layer deposition grown ZnO thin films Applied Surface Science. 421: 341-348. DOI: 10.1016/J.Apsusc.2016.10.130 |
0.516 |
|
| 2017 |
Fernando NS, Nunley TN, Ghosh A, Nelson CM, Cooke JA, Medina AA, Zollner S, Xu C, Menendez J, Kouvetakis J. Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si Applied Surface Science. 421: 905-912. DOI: 10.1016/J.Apsusc.2016.09.019 |
0.799 |
|
| 2017 |
Zollner S, Nunley TN, Trujillo DP, Pineda LG, Abdallah LS. Temperature-dependent dielectric function of nickel Applied Surface Science. 421: 913-916. DOI: 10.1016/J.Apsusc.2016.07.140 |
0.37 |
|
| 2016 |
Talukder AA, Cui Y, Compton M, Geerts W, Scolfaro L, Zollner S. FTIR Ellipsometry Study on RF sputtered Permalloy-Oxide Thin Films Mrs Advances. 1: 3361-3366. DOI: 10.1557/Adv.2016.427 |
0.394 |
|
| 2016 |
Nunley TN, Fernando NS, Samarasingha N, Moya JM, Nelson CM, Medina AA, Zollner S. Optical constants of germanium and thermally grown germanium dioxide from 0.5 to 6.6eV via a multisample ellipsometry investigation Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4963075 |
0.786 |
|
| 2016 |
Nunley TN, Willett-Gies TI, Cooke JA, Manciu FS, Marsik P, Bernhard C, Zollner S. Optical constants, band gap, and infrared-active phonons of (LaAlO3)0.3(Sr2AlTaO6)0.35 (LSAT) from spectroscopic ellipsometry Journal of Vacuum Science and Technology. 34: 51507. DOI: 10.1116/1.4960356 |
0.423 |
|
| 2016 |
Fredrickson KD, Lin C, Zollner S, Demkov AA. Theoretical study of negative optical mode splitting in LaAl O3 Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.134301 |
0.309 |
|
| 2016 |
Hart J, Hazbun R, Eldridge D, Hickey R, Fernando N, Adam T, Zollner S, Kolodzey J. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys Thin Solid Films. 604: 23-27. DOI: 10.1016/J.Tsf.2016.03.010 |
0.794 |
|
| 2016 |
Hazbun R, Hart J, Hickey R, Ghosh A, Fernando N, Zollner S, Adam TN, Kolodzey J. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition Journal of Crystal Growth. 444: 21-27. DOI: 10.1016/J.Jcrysgro.2016.03.018 |
0.792 |
|
| 2015 |
Ghosh A, Nelson CM, Abdallah LS, Zollner S. Optical constants and band structure of trigonal NiO Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4932514 |
0.455 |
|
| 2015 |
Willett-Gies TI, Nelson CM, Abdallah LS, Zollner S. Two-phonon absorption in LiF and NiO from infrared ellipsometry Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4927159 |
0.393 |
|
| 2015 |
Choi M, Lin C, Butcher M, Rodriguez C, He Q, Posadas AB, Borisevich AY, Zollner S, Demkov AA. Quantum confinement in transition metal oxide quantum wells Applied Physics Letters. 106. DOI: 10.1063/1.4921013 |
0.376 |
|
| 2014 |
Abdallah LS, Zollner S, Lavoie C, Ozcan AS, Raymond M. Optical conductivity of Ni1-xPtxSi monosilicides (0 < x < 0.3) from spectroscopic ellipsometry Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4895111 |
0.491 |
|
| 2014 |
O'Hara A, Nunley TN, Posadas AB, Zollner S, Demkov AA. Electronic and optical properties of NbO2 Journal of Applied Physics. 116. DOI: 10.1063/1.4903067 |
0.454 |
|
| 2014 |
Choi M, Posadas AB, Rodriguez CA, O'Hara A, Seinige H, Kellock AJ, Frank MM, Tsoi M, Zollner S, Narayanan V, Demkov AA. Structural, optical, and electrical properties of strained La-doped SrTiO3 films Journal of Applied Physics. 116. DOI: 10.1063/1.4891225 |
0.408 |
|
| 2014 |
Kormondy KJ, Posadas AB, Slepko A, Dhamdhere A, Smith DJ, Mitchell KN, Willett-Gies TI, Zollner S, Marshall LG, Zhou J, Demkov AA. Epitaxy of polar semiconductor Co3O4 (110): Growth, structure, and characterization Journal of Applied Physics. 115. DOI: 10.1063/1.4885048 |
0.485 |
|
| 2014 |
Abdallah LS, Tawalbeh TM, Vasiliev IV, Zollner S, Lavoie C, Ozcan A, Raymond M. Optical conductivity of Ni1- XPtx alloys (0< x <0.25) from 0.76 to 6.6 eV Aip Advances. 4. DOI: 10.1063/1.4861214 |
0.456 |
|
| 2014 |
Zollner CJ, Willett-Gies TI, Zollner S, Choi S. Infrared to vacuum-ultraviolet ellipsometry studies of spinel (MgAl2O4) Thin Solid Films. 571: 689-694. DOI: 10.1016/J.Tsf.2013.11.141 |
0.383 |
|
| 2014 |
Willett-Gies T, Delong E, Zollner S. Vibrational properties of bulk LaAlO3 from Fourier-transform infrared ellipsometry Thin Solid Films. 571: 620-624. DOI: 10.1016/J.Tsf.2013.11.140 |
0.381 |
|
| 2014 |
Abdallah LS, Zollner S, Lavoie C, Ozcan A, Raymond M. Compositional dependence of the optical conductivity of Ni1 - XPtx alloys (0 < x < 0.25) determined by spectroscopic ellipsometry Thin Solid Films. 571: 484-489. DOI: 10.1016/J.Tsf.2013.11.022 |
0.467 |
|
| 2013 |
Posadas AB, Lin C, Demkov AA, Zollner S. Bandgap engineering in perovskite oxides: Al-doped SrTiO3 Applied Physics Letters. 103. DOI: 10.1063/1.4824023 |
0.445 |
|
| 2012 |
Nelson CM, Spies M, Abdallah LS, Zollner S, Xu Y, Luo H. Dielectric function of LaAlO3 from 0.8 to 6 eV between 77 and 700 K Journal of Vacuum Science and Technology. 30: 61404. DOI: 10.1116/1.4754811 |
0.34 |
|
| 2012 |
Choi SG, Hu J, Abdallah LS, Limpinsel M, Zhang YN, Zollner S, Wu RQ, Law M. Pseudodielectric function and critical-point energies of iron pyrite Physical Review B. 86: 115207. DOI: 10.1103/Physrevb.86.115207 |
0.343 |
|
| 2012 |
Weiss CV, Zhang J, Spies M, Abdallah LS, Zollner S, Cole MW, Alpay SP. Bulk-like dielectric properties from metallo-organic solution-deposited SrTiO 3 films on Pt-coated Si substrates Journal of Applied Physics. 111. DOI: 10.1063/1.3692811 |
0.464 |
|
| 2008 |
Luo X, Demkov AA, Triyoso D, Fejes P, Gregory R, Zollner S. Combined experimental and theoretical study of thin hafnia films Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.245314 |
0.421 |
|
| 2008 |
Bentmann H, Demkov AA, Gregory R, Zollner S. Electronic, optical, and surface properties of PtSi thin films Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.205302 |
0.43 |
|
| 2007 |
Zollner S, Qin W, Gregory RB, Edwards NV, Junker K, Tiwald TE. Stress-induced anisotropy of graphitelike amorphous carbon Journal of Applied Physics. 101: 53522. DOI: 10.1063/1.2562551 |
0.427 |
|
| 2006 |
Vartanian V, Zollner S, Thean AV-, White T, Nguyen B-, Prabhu L, Eades D, Parsons S, Desjardins H, Kim K, Jiang Z-, Dhandapani V, Hildreth J, Powers R, Spencer G, et al. Metrology Challenges for 45-nm Strained-Si Device Technology Ieee Transactions On Semiconductor Manufacturing. 19: 381-390. DOI: 10.1109/Tsm.2006.884603 |
0.416 |
|
| 2006 |
Niranjan MK, Zollner S, Kleinman L, Demkov AA. Theoretical investigation of PtSi surface energies and work functions Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.195332 |
0.36 |
|
| 2006 |
D'Costa VR, Cook CS, Birdwell AG, Littler CL, Canonico M, Zollner S, Kouvetakis J, Menéndez J. Optical critical points of thin-film Ge1-y Sny alloys: A comparative Ge1-y Sny Ge1-x six study Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.125207 |
0.608 |
|
| 2006 |
D'Costa VR, Cook CS, Menéndez J, Tolle J, Kouvetakis J, Zollner S. Transferability of optical bowing parameters between binary and ternary group-IV alloys Solid State Communications. 138: 309-313. DOI: 10.1016/J.Ssc.2006.02.023 |
0.572 |
|
| 2005 |
Lucovsky G, Fulton CC, Zhang Y, Zou Y, Luning J, Edge LF, Whitten JL, Nemanich RJ, Ade H, Schlom DG, Afanase'v VV, Stesmans A, Zollner S, Triyoso D, Rogers BR. Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect Ieee Transactions On Device and Materials Reliability. 5: 65-83. DOI: 10.1109/Tdmr.2005.845804 |
0.376 |
|
| 2005 |
Zollner S, Liang Y, Gregory RB, Fejes PL, Theodore D, Yu Z, Triyoso DH, Curless J, Tracy C. Limits of Optical and X‐ray Metrology Applied to Thin Gate Dielectrics Characterization and Metrology For Ulsi Technology. 788: 166-171. DOI: 10.1063/1.2062957 |
0.433 |
|
| 2005 |
Triyoso DH, Hegde RI, Zollner S, Ramon ME, Kalpat S, Gregory R, Wang X-, Jiang J, Raymond M, Rai R, Werho D, Roan D, White BE, Tobin PJ. Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition Journal of Applied Physics. 98: 54104. DOI: 10.1063/1.2030407 |
0.463 |
|
| 2005 |
Roucka R, Tolle J, Cook C, Chizmeshya AVG, Kouvetakis J, D'Costa V, Menendez J, Chen ZD, Zollner S. Versatile buffer layer architectures based on Ge 1- x Sn x alloys Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922078 |
0.617 |
|
| 2005 |
Schmidt J, Vogg G, Bensch F, Kreuzer S, Ramm P, Zollner S, Liu R, Wennekers P. Spectroscopic techniques for characterization of high-mobility strained-Si CMOS Materials Science in Semiconductor Processing. 8: 267-271. DOI: 10.1016/J.Mssp.2004.09.095 |
0.468 |
|
| 2005 |
Lucovsky G, Zhang Y, Luning J, Afanase'v VV, Stesmans A, Zollner S, Triyoso D, Rogers BR, Whitten JL. Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics Microelectronic Engineering. 80: 110-113. DOI: 10.1016/J.Mee.2005.04.052 |
0.392 |
|
| 2004 |
Passlack M, Medendorp N, Zollner S, Gregory R, Braddock D. Optical and electrical properties of amorphous GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs Applied Physics Letters. 84: 2521-2523. DOI: 10.1063/1.1695445 |
0.446 |
|
| 2004 |
Aella P, Cook C, Tolle J, Zollner S, Chizmeshya AVG, Kouvetakis J. Optical and structural properties of Si xSn yGe 1-x-y alloys Applied Physics Letters. 84: 888-890. DOI: 10.1063/1.1645324 |
0.474 |
|
| 2004 |
Cook CS, Zollner S, Bauer MR, Aella P, Kouvetakis J, Menendez J. Optical constants and interband transitions of Ge1-xSn x alloys (x<0.2) grown on Si by UHV-CVD Thin Solid Films. 455: 217-221. DOI: 10.1016/J.Tsf.2003.11.277 |
0.652 |
|
| 2004 |
Zollner S, Liu R, Volinsky AA, White T, Nguyen BY, Cook CS. Gate oxide metrology and silicon piezooptics Thin Solid Films. 455: 261-265. DOI: 10.1016/J.Tsf.2003.11.276 |
0.324 |
|
| 2004 |
Cook CS, Daly T, Liu R, Canonico M, Xie Q, Gregory RB, Zollner S. Spectroscopic ellipsometry for in-line monitoring of silicon nitrides Thin Solid Films. 455: 794-797. DOI: 10.1016/J.Tsf.2003.11.265 |
0.362 |
|
| 2003 |
Schaeffer J, Edwards NV, Liu R, Roan D, Hradsky B, Gregory R, Kulik J, Duda E, Contreras L, Christiansen J, Zollner S, Tobin P, Nguyen BY, Nieh R, Ramon M, et al. HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1554729 |
0.422 |
|
| 2003 |
Xie Q, Liu R, Wang X, Canonico M, Duda E, Lu S, Cook C, Volinsky AA, Zollner S, Thomas SG, White T, Barr A, Sadaka M, Nguyen B. Characterization Techniques for Evaluating Strained Si CMOS Materials Characterization and Metrology For Ulsi Technology. 683: 223-227. DOI: 10.1063/1.1622475 |
0.417 |
|
| 2003 |
Bauer MR, Cook CS, Aella P, Tolle J, Kouvetakis J, Crozier PA, Chizmeshya AVG, Smith DJ, Zollner S. SnGe superstructure materials for Si-based infrared optoelectronics Applied Physics Letters. 83: 3489-3491. DOI: 10.1063/1.1622435 |
0.499 |
|
| 2002 |
Bauer MR, Tolle J, Chizmeshya AVG, Zollner S, Menendez J, Kouvetakis J. New Ge-Sn materials with adjustable bandgaps and lattice constants Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M2.5 |
0.648 |
|
| 2002 |
Edwards NV, Lindquist OPA, Madsen LD, Zollner S, Järrehdahl K, Cobet C, Peters S, Esser N, Konkar A, Aspnes DE. Determination and critical assessment of the optical properties of common substrate materials used in III-V nitride heterostructures with vacuum ultraviolet spectroscopic ellipsometry Materials Research Society Symposium - Proceedings. 693: 509-514. DOI: 10.1557/Proc-693-I8.3.1 |
0.381 |
|
| 2002 |
Bauer M, Taraci J, Tolle J, Chizmeshya AVG, Zollner S, Smith DJ, Menendez J, Hu C, Kouvetakis J. Ge-Sn semiconductors for band-gap and lattice engineering Applied Physics Letters. 81: 2992-2994. DOI: 10.1063/1.1515133 |
0.661 |
|
| 2001 |
Taraci J, Zollner S, McCartney MR, Menendez J, Santana-Aranda MA, Smith DJ, Haaland A, Tutukin AV, Gundersen G, Wolf G, Kouvetakis J. Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods. Journal of the American Chemical Society. 123: 10980-7. PMID 11686702 DOI: 10.1021/Ja0115058 |
0.656 |
|
| 2001 |
Edwards N, Vella J, Xie Q, Zollner S, Werho D, Adhihetty I, Liu R, Tiwald T, Russell C, Vires J, Junker K. Spectroscopic Ellipsometry as a Potential In-Line Optical Metrology Tool For Relative Porosity Measurements of Low- K Dielectric Films Mrs Proceedings. 697. DOI: 10.1557/Proc-697-P4.7 |
0.398 |
|
| 2001 |
Taraci J, Zollner S, McCartney MR, Menendez J, Smith DJ, Tolle J, Bauer M, Duda E, Edwards NV, Kouvetakis J. Optical Vibrational and Structural Properties of Ge1−xSn x alloys by UHV-CVD Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H11.4.1 |
0.649 |
|
| 2001 |
Liu R, Zollner S, Fejes P, Gregory R, Lu S, Reid K, Gilmer D, Nguyen B, Yu Z, Droopad R. Materials and physical properties of novel high-k and medium-k gate dielectrics Mrs Proceedings. 670. DOI: 10.1557/Proc-670-K1.1 |
0.419 |
|
| 2001 |
Prokofyeva T, Seon M, Vanbuskirk J, Holtz M, Nikishin SA, Faleev NN, Temkin H, Zollner S. Vibrational properties of AIN grown on (111)-oriented silicon Physical Review B - Condensed Matter and Materials Physics. 63: 1253131-1253137. DOI: 10.1103/Physrevb.63.125313 |
0.43 |
|
| 2001 |
Zollner S. Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eV Journal of Applied Physics. 90: 515-517. DOI: 10.1063/1.1376400 |
0.383 |
|
| 2001 |
Zollner S, Apen E. Optical constants for metrology of hydrogenated amorphous silicon-nitrogen alloys on Si Characterization and Metrology For Ulsi Technology. 550: 532-537. DOI: 10.1063/1.1354451 |
0.472 |
|
| 2001 |
Wagner T, Hilfiker JN, Tiwald TE, Bungay CL, Zollner S. Materials Characterization in the Vacuum Ultraviolet with Variable Angle Spectroscopic Ellipsometry Physica Status Solidi (a). 188: 1553-1562. DOI: 10.1002/1521-396X(200112)188:4<1553::Aid-Pssa1553>3.0.Co;2-A |
0.411 |
|
| 2000 |
Zollner S, Konkar A, Liu R, Yapa H, Dryer PF, Neeley VA, Xie Q, Grom GF, Zhu Q, Krishnan R, Fauchet PM, Tsybeskov LV. Optical and Structural Characterization of Nanocrystalline Silicon Superlattices: Toward Nanoscale Silicon Metrology Mrs Proceedings. 638. DOI: 10.1557/Proc-638-F5.1.1 |
0.489 |
|
| 2000 |
Zollner S, Demkov A, Liu R, Curless J, Yu Z, Ramdani J, Droopad R. Optical Properties of Thin-Film SrTiO3 on Si Grown by MBE Mrs Proceedings. 619. DOI: 10.1557/Proc-619-167 |
0.452 |
|
| 2000 |
Zollner S, Demkov AA, Liu R, Fejes PL, Gregory RB, Alluri P, Curless JA, Yu Z, Ramdani J, Droopad R, Tiwald TE, Hilfiker JN, Woollam JA. Optical properties of bulk and thin-film SrTiO[sub 3] on Si and Pt Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 2242. DOI: 10.1116/1.1303741 |
0.52 |
|
| 2000 |
Zollner S, Hildreth J, Liu R, Zaumseil P, Weidner M, Tillack B. Optical constants and ellipsometric thickness determination of strained Si1−xGex:C layers on Si (100) and related heterostructures Journal of Applied Physics. 88: 4102-4108. DOI: 10.1063/1.1308070 |
0.466 |
|
| 2000 |
Holtz M, Duncan WM, Zollner S, Liu R. Visible and ultraviolet Raman scattering studies of Si1−xGex alloys Journal of Applied Physics. 88: 2523-2528. DOI: 10.1063/1.1287757 |
0.438 |
|
| 2000 |
Zollner S, Lee T-, Noehring K, Konkar A, Theodore ND, Huang WM, Monk D, Wetteroth T, Wilson SR, Hilfiker JN. Thin-film metrology of silicon-on-insulator materials Applied Physics Letters. 76: 46-48. DOI: 10.1063/1.125651 |
0.443 |
|
| 2000 |
Liaw HM, Doyle R, Fejes PL, Zollner S, Konkar A, Linthicum KJ, Gehrke T, Davis RF. Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates Solid-State Electronics. 44: 747-755. DOI: 10.1016/S0038-1101(99)00307-X |
0.436 |
|
| 2000 |
Zollner S. Ellipsometry of platinum films on silicon Physica Status Solidi (a). 177. DOI: 10.1002/(Sici)1521-396X(200002)177:23.0.Co;2-G |
0.359 |
|
| 1999 |
Hong SQ, Liaw HM, Linthicum K, Davis RF, Fejes P, Zollner S, Kottke M, Wilson SR. Epitaxial Growth of AlN on Si Substrates with Intermediate 3C-SiC as Buffer Layers Mrs Proceedings. 572. DOI: 10.1557/Proc-572-407 |
0.424 |
|
| 1999 |
Zollner S, Konkar A, Gregory RB, Wilson SR, Nikishin SA, Temkin H. Dielectric function of AlN grown on Si (111) by MBE Materials Research Society Symposium - Proceedings. 572: 231-236. DOI: 10.1557/Proc-572-231 |
0.493 |
|
| 1999 |
Liaw HM, Hong SQ, Fejes P, Werho D, Tompkins H, Zollner S, Wilson SR, Linthicum KJ, Davis RF. 3C-SiC Buffer Layers Converted from Si at a Low Temperature Mrs Proceedings. 572: 219. DOI: 10.1557/Proc-572-219 |
0.399 |
|
| 1999 |
Tiwald TE, Woollam JA, Zollner S, Christiansen J, Gregory RB, Wetteroth T, Wilson SR, Powell AR. Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry Physical Review B. 60: 11464-11474. DOI: 10.1103/Physrevb.60.11464 |
0.411 |
|
| 1999 |
Zollner S, Chen JG, Duda E, Wetteroth T, Wilson SR, Hilfiker JN. Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si Journal of Applied Physics. 85: 8353-8361. DOI: 10.1063/1.370682 |
0.438 |
|
| 1999 |
Zollner S, Liu R, Konkar A, Gutt J, Wilson SR, Tiwald TI, Woollam JA, Hilfiker JN. Dielectric Function of Polycrystalline SiC from 190 nm to 15 μm Physica Status Solidi B-Basic Solid State Physics. 215: 21-25. DOI: 10.1002/(Sici)1521-3951(199909)215:1<21::Aid-Pssb21>3.0.Co;2-O |
0.421 |
|
| 1998 |
Liu R, Zollner S, Liaw M, O'meara D, Cave N. Raman Spectroscopy of Epitaxial Si/Si 1-x Ge, x Heterostructures Mrs Proceedings. 533: 63. DOI: 10.1557/Proc-533-63 |
0.429 |
|
| 1998 |
Junge KE, Lange R, Dolan JM, Zollner S, Humlfcek J, Dashiell MW, Hits DA, Orner BA, Kolodzey J. Ellipsometry Studies, Optical Properties, And Band Structure of Gel. 1- y C y , Ge-RICH Si 1- x-y Ge x C y , And Boron-Doped Si 1- x Ge x Alloys Mrs Proceedings. 533: 125. DOI: 10.1557/Proc-533-125 |
0.483 |
|
| 1998 |
Zollner S, Liu R, Christiansen J, Chen W, Monarch K, Lee T, Singh R, Yater J, Paulson WM, Feng C. Raman and Spectroscopic Ellipsometry Studies of P-Doped Poly-Si Mrs Proceedings. 507. DOI: 10.1557/Proc-507-957 |
0.38 |
|
| 1998 |
Lange RJ, Lee SJ, Lynch DW, Canfield PC, Harmon BN, Zollner S. Ellipsometric and Kerr-effect studies ofPt3−X(X=Mn,Co) Physical Review B. 58: 351-358. DOI: 10.1103/Physrevb.58.351 |
0.424 |
|
| 1998 |
Zollner S, Liu R, Christiansen J, Chen W, Monarch K, Lee T, Singh R, Yater J, Paulson WM, Feng C. Optical studies of phosphorus-doped poly-Si films Characterization and Metrology For Ulsi Technology. 449: 298-302. DOI: 10.1063/1.56809 |
0.479 |
|
| 1998 |
Zollner S, Myers KD, Dolan JM, Bailey DW, Stanton CJ. Theory of femtosecond ellipsometry in Ge at 1.5 eV Thin Solid Films. 313: 568-573. DOI: 10.1016/S0040-6090(97)00886-9 |
0.377 |
|
| 1998 |
Lee SJ, Lange RJ, Hong S, Zollner S, Canfield PC, Panchula AF, Harmon BN, Lynch DW. Theoretical and experimental determination of optical and magneto-optical properties of LuFe2 single crystal Thin Solid Films. 313: 222-227. DOI: 10.1016/S0040-6090(97)00822-5 |
0.354 |
|
| 1998 |
Junge KE, Voss NR, Lange R, Dolan JM, Zollner S, Dashiell M, Hits DA, Orner BA, Jonczyk R, Kolodzey J. Optical properties and band structure of Ge1−yCy and Ge-rich Si1−x−yGexCy alloys Thin Solid Films. 313: 172-176. DOI: 10.1016/S0040-6090(97)00806-7 |
0.51 |
|
| 1997 |
Zollner S, Myers KD, Jensen KG, Dolan JM, Bailey DW, Stanton CJ. Femtosecond interband hole scattering in Ge studied by pump-probe reflectivity Solid State Communications. 104: 51-55. DOI: 10.1016/S0038-1098(97)00068-9 |
0.391 |
|
| 1996 |
Zollner S, Junge KE, Lange R, Affolder AA. Comment on “Optical Characterization of Si 1 - xCx/Si (0≤ x ≤0.014) Semiconductor Alloys" Japanese Journal of Applied Physics. 35: 5684-5685. DOI: 10.1143/Jjap.35.5684 |
0.423 |
|
| 1996 |
Lange R, Junge KE, Zollner S, Iyer SS, Powell AP, Eberl K. Dielectric response of strained and relaxed Si1−x−yGexCy alloys grown by molecular beam epitaxy on Si(001) Journal of Applied Physics. 80: 4578-4586. DOI: 10.1063/1.363827 |
0.449 |
|
| 1996 |
Junge KE, Lange R, Dolan JM, Zollner S, Dashiell M, Orner BA, Kolodzey J. Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si Applied Physics Letters. 69: 4084-4086. DOI: 10.1063/1.117826 |
0.493 |
|
| 1995 |
Zollner S, Herzinger CM, Woollam JA, Lyer SS, Powell AP, Eberl K. Spectroscopic Ellipsometry and Band Structure of Si 1–y C y Alloys Grown Pseudomorphically on Si (001) Mrs Proceedings. 379: 205-210. DOI: 10.1557/Proc-379-205 |
0.432 |
|
| 1995 |
Zollner S. Theory of optical interband transitions in strained Si1−yCy grown pseudomorphically on Si (001) Journal of Applied Physics. 78: 5209-5211. DOI: 10.1063/1.359696 |
0.431 |
|
| 1995 |
Zollner S, Herzinger CM, Woollam JA, Iyer SS, Powell AP, Eberl K. Piezo-optical response of Si1-yCy alloys grown pseudomorphically on Si (001) Solid State Communications. 96: 305-308. DOI: 10.1016/0038-1098(95)00441-6 |
0.491 |
|
| 1993 |
Zollner S, Garriga M, Kircher J, Humlicek J, Cardona M, Neuhold G. Temperature dependence of the dielectric function and the interband critical-point parameters of GaP. Physical Review. B, Condensed Matter. 48: 7915-7929. PMID 10006977 DOI: 10.1016/0040-6090(93)90086-5 |
0.517 |
|
| 1993 |
Zollner S. Model dielectric functions for native oxides on compound semiconductors Applied Physics Letters. 63: 2523-2524. DOI: 10.1063/1.110469 |
0.367 |
|
| 1993 |
Kelly MK, Zollner S, Cardon M. Modelling the optical response of surfaces measured by spectroscopic ellipsometry: application to Si and Ge Surface Science. 285: 282-294. DOI: 10.1016/0039-6028(93)90440-U |
0.39 |
|
| 1992 |
Zollner S, Cardona M, Gopalan S. Erratum: Isotope and temperature shifts of direct and indirect band gaps in diamond-type semiconductors Physical Review. B, Condensed Matter. 46: 7337. PMID 10002468 DOI: 10.1103/Physrevb.46.7337 |
0.503 |
|
| 1992 |
Zollner S, Cardona M, Gopalan S. Isotope and temperature shifts of direct and indirect band gaps in diamond-type semiconductors. Physical Review. B, Condensed Matter. 45: 3376-3385. PMID 10001912 DOI: 10.1103/Physrevb.45.3376 |
0.503 |
|
| 1992 |
Zollner S, Collins RT, Goorsky MS, Wang PJ, Tejwani MJ, Chu JO, Meyerson BS, LeGoues FK. Photoluminescence from pseudomorphically strained Si/Si 1-x Ge x multiple quantum wells grown on silicon Semiconductors. 1678: 81-88. DOI: 10.1117/12.60443 |
0.634 |
|
| 1992 |
Zollner S, Grein CH, Cardona M. Alloy versus phonon contributions to intervalley scattering in Al1-xGaxAs Semiconductors. 1677: 75-84. DOI: 10.1117/12.137698 |
0.485 |
|
| 1992 |
Zollner S, Cardona M, Gopalan S. Isotope and temperature shifts of direct and indirect band gaps in diamond-type semiconductors Physical Review B. 45: 3376-3385. DOI: 10.1103/PhysRevB.45.3376 |
0.454 |
|
| 1992 |
Zollner S, Gopalan S, Cardona M. Short-range deformation-potential interaction and its application to ultrafast processes in semiconductors Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/032 |
0.477 |
|
| 1992 |
Tsang JC, Eberl K, Zollner S, Iyer SS. Raman spectroscopy of CySi1-y alloys grown by molecular beam epitaxy Applied Physics Letters. 61: 961-963. DOI: 10.1063/1.107742 |
0.368 |
|
| 1992 |
Eberl K, Iyer SS, Zollner S, Tsang JC, Legoues FK. Growth and strain compensation effects in the ternary Si 1-x-yGexCy alloy system Applied Physics Letters. 60: 3033-3035. DOI: 10.1063/1.106774 |
0.443 |
|
| 1992 |
Cardona M, Grein CH, Fuchs HD, Zollner S. Isotope effects on the electronic excitations and phonons in semiconductors Journal of Non-Crystalline Solids. 141: 257-264. DOI: 10.1016/S0022-3093(05)80540-X |
0.434 |
|
| 1991 |
Zollner S, Gopalan S, Cardona M. Microscopic theory of intervalley scattering in InP. Physical Review. B, Condensed Matter. 44: 13446-13451. PMID 9999547 DOI: 10.1103/Physrevb.44.13446 |
0.475 |
|
| 1991 |
Grein CH, Zollner S, Cardona M. Calculation of intervalley scattering rates in AlxGa1-xAs: Effects of alloy and phonon scattering. Physical Review. B, Condensed Matter. 44: 12761-12768. PMID 9999451 DOI: 10.1103/Physrevb.44.12761 |
0.427 |
|
| 1991 |
Grein CH, Zollner S, Cardona M. Microscopic theory of second-order Raman scattering in silicon under uniaxial stress. Physical Review. B, Condensed Matter. 43: 6633-6641. PMID 9998106 DOI: 10.1103/Physrevb.43.6633 |
0.395 |
|
| 1991 |
Zollner S, Garriga M, Humlek J, Gopalan S, Cardona M. Temperature dependence of the dielectric function and the interband critical-point parameters of GaSb. Physical Review. B, Condensed Matter. 43: 4349-4360. PMID 9997789 |
0.368 |
|
| 1991 |
Tischler MA, Collins RT, Tsang JC, Stathis JH, Batstone JL, Zollner S. Optical Characteristics of Porous Silicon Mrs Proceedings. 256. DOI: 10.1557/Proc-256-189 |
0.536 |
|
| 1991 |
Zollner S, Gopalan S, Cardona M. Microscopic theory of intervalley scattering in InP Physical Review B. 44: 13446-13451. DOI: 10.1103/PhysRevB.44.13446 |
0.393 |
|
| 1991 |
Pierz K, Stutzmann M, Zollner S, Beyer W, Brillerty C. Structural properties of Li-doped hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 107-110. DOI: 10.1016/S0022-3093(05)80068-7 |
0.398 |
|
| 1991 |
Zollner S, Gopalan S, Cardona M. The temperature dependence of the band gaps in InP, InAs, InSb, and GaSb Solid State Communications. 77: 485-488. DOI: 10.1016/0038-1098(91)90725-B |
0.521 |
|
| 1990 |
Zollner S, Gopalan S, Cardona M. Microscopic theory of intervalley scattering in GaAs: K dependence of deformation potentials and scattering rates Journal of Applied Physics. 68: 1682-1693. DOI: 10.1063/1.346622 |
0.468 |
|
| 1990 |
Zollner S, Schmid U, Christensen NE, Cardona M. Conduction-band minima of InP: Ordering and absolute energies Applied Physics Letters. 57: 2339-2341. DOI: 10.1063/1.103886 |
0.488 |
|
| 1990 |
Zollner S, Gopalan S, Garriga M, Humlíček J, Viña L, Cardona M. Ultrafast initial relaxation of hot electrons and holes in tetrahedral semiconductors via deformation potential interaction: Theory and experiment Applied Physics Letters. 57: 2838-2840. DOI: 10.1063/1.103758 |
0.545 |
|
| 1990 |
Zollner S, Gopalan S, Cardona M. Effective intervalley deformation potentials in the description of time-resolved and hot-electron luminescence Solid State Communications. 76: 877-879. DOI: 10.1016/0038-1098(90)90875-C |
0.459 |
|
| 1989 |
Ingels M, Stutzmann M, Zollner S. Optical Properties of Microcrystalline Silicon Mrs Proceedings. 164. DOI: 10.1557/Proc-164-229 |
0.352 |
|
| 1989 |
Zollner S, Lin C, Schönherr E, Böhringer A, Cardona M. The dielectric function of AlSb from 1.4 to 5.8 eV determined by spectroscopic ellipsometry Journal of Applied Physics. 66: 383-387. DOI: 10.1063/1.343888 |
0.539 |
|
| 1989 |
Zollner S, Gopalan S, Cardona M. Intervalley deformation potentials and scattering rates in zinc blende semiconductors Applied Physics Letters. 54: 614-616. DOI: 10.1063/1.100895 |
0.484 |
|
| 1989 |
Zollner S, Kircher J, Cardona M, Gopalan S. Are transverse phonons important for Γ - X-intervalley scattering? Solid State Electronics. 32: 1585-1589. DOI: 10.1016/0038-1101(89)90278-5 |
0.51 |
|
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