Year |
Citation |
Score |
2021 |
Jung YK, Kim S, Kim YC, Walsh A. Low Barrier for Exciton Self-Trapping Enables High Photoluminescence Quantum Yield in CsCuI. The Journal of Physical Chemistry Letters. 8447-8452. PMID 34437809 DOI: 10.1021/acs.jpclett.1c02252 |
0.734 |
|
2021 |
Whalley LD, van Gerwen P, Frost JM, Kim S, Hood SN, Walsh A. Giant Huang-Rhys Factor for Electron Capture by the Iodine Intersitial in Perovskite Solar Cells. Journal of the American Chemical Society. PMID 34102845 DOI: 10.1021/jacs.1c03064 |
0.436 |
|
2020 |
Crovetto A, Kim S, Fischer M, Stenger N, Walsh A, Chorkendorff I, Vesborg PCK. Assessing the defect tolerance of kesterite-inspired solar absorbers Energy and Environmental Science. DOI: 10.1039/D0Ee02177F |
0.506 |
|
2020 |
Kim S, Márquez JA, Unold T, Walsh A. Upper limit to the photovoltaic efficiency of imperfect crystals from first principles Energy and Environmental Science. 13: 1481-1491. DOI: 10.1039/D0Ee00291G |
0.503 |
|
2019 |
Pastor E, Park JS, Steier L, Kim S, Grätzel M, Durrant JR, Walsh A, Bakulin AA. In situ observation of picosecond polaron self-localisation in α-FeO photoelectrochemical cells. Nature Communications. 10: 3962. PMID 31481691 DOI: 10.1038/S41467-019-11767-9 |
0.685 |
|
2019 |
Kim S, Hood SN, Walsh A. Anharmonic lattice relaxation during nonradiative carrier capture Physical Review B. 100. DOI: 10.1103/Physrevb.100.041202 |
0.503 |
|
2019 |
Park J, Kim S, Hood SN, Walsh A. Publisher's Note: “Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing” [Appl. Phys. Lett. 113, 212103 (2018)] Applied Physics Letters. 114: 259901. DOI: 10.1063/1.5094791 |
0.67 |
|
2019 |
Jung Y, Calbo J, Park J, Whalley LD, Kim S, Walsh A. Intrinsic doping limit and defect-assisted luminescence in Cs4PbBr6 Journal of Materials Chemistry A. 7: 20254-20261. DOI: 10.1039/C9Ta06874K |
0.455 |
|
2019 |
Kim S, Park J, Hood S, Walsh A. Lone-pair effect on carrier capture in Cu2ZnSnS4solar cells Journal of Materials Chemistry A. 7: 2686-2693. DOI: 10.1039/C8Ta10130B |
0.488 |
|
2019 |
Morita K, Park JS, Kim S, Yasuoka K, Walsh A. Crystal Engineering of Bi2WO6 to Polar Aurivillius-Phase Oxyhalides Journal of Physical Chemistry C. 123: 29155-29161. DOI: 10.1021/Acs.Jpcc.9B09806 |
0.466 |
|
2018 |
Park J, Kim S, Walsh A. Opposing effects of stacking faults and antisite domain boundaries on the conduction band edge in kesterite quaternary semiconductors Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.014602 |
0.477 |
|
2018 |
Park J, Kim S, Hood SN, Walsh A. Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing Applied Physics Letters. 113: 212103. DOI: 10.1063/1.5063793 |
0.69 |
|
2018 |
Park J, Kim S, Walsh A. Stability and electronic properties of planar defects in quaternary I2-II-IV-VI4 semiconductors Journal of Applied Physics. 124: 165705. DOI: 10.1063/1.5053424 |
0.681 |
|
2018 |
Monserrat B, Park J, Kim S, Walsh A. Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells Applied Physics Letters. 112: 193903. DOI: 10.1063/1.5028186 |
0.699 |
|
2018 |
Park JS, Kim S, Xie Z, Walsh A. Point defect engineering in thin-film solar cells Nature Reviews Materials. 3: 194-210. DOI: 10.1038/S41578-018-0026-7 |
0.518 |
|
2018 |
Kim S, Park J, Walsh A. Correction to “Identification of Killer Defects in Kesterite Thin-Film Solar Cells” Acs Energy Letters. 3: 1077-1077. DOI: 10.1021/Acsenergylett.8B00528 |
0.663 |
|
2018 |
Kim S, Park J, Walsh A. Identification of Killer Defects in Kesterite Thin-Film Solar Cells Acs Energy Letters. 3: 496-500. DOI: 10.1021/Acsenergylett.7B01313 |
0.538 |
|
2018 |
Kim M, Kim S, Song D, Oh S, Chang KJ, Cho E. Promotion of electrochemical oxygen evolution reaction by chemical coupling of cobalt to molybdenum carbide Applied Catalysis B: Environmental. 227: 340-348. DOI: 10.1016/J.Apcatb.2018.01.051 |
0.363 |
|
2017 |
Han W, Kim S, Lee IH, Chang KJ. Prediction of Green Phosphorus with Tunable Direct Band Gap and High Mobility. The Journal of Physical Chemistry Letters. PMID 28889743 DOI: 10.1021/Acs.Jpclett.7B02153 |
0.416 |
|
2017 |
Kim S, Han WH, Lee IH, Chang KJ. Boron Triangular Kagome Lattice with Half-Metallic Ferromagnetism. Scientific Reports. 7: 7279. PMID 28779140 DOI: 10.1038/S41598-017-07518-9 |
0.375 |
|
2017 |
Han WH, Oh YJ, Choe D, Kim S, Lee I, Chang KJ. Three-dimensional buckled honeycomb boron lattice with vacancies as an intermediate phase on the transition pathway from α-B to γ-B Npg Asia Materials. 9. DOI: 10.1038/Am.2017.98 |
0.717 |
|
2017 |
Sung H, Kim S, Lee I, Chang KJ. Semimetallic carbon allotrope with a topological nodal line in mixed sp2-sp3 bonding networks Npg Asia Materials. 9: e361-e361. DOI: 10.1038/Am.2017.26 |
0.369 |
|
2016 |
Oh YJ, Kim S, Lee IH, Lee J, Chang KJ. Direct band gap carbon superlattices with efficient optical transition Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.085201 |
0.423 |
|
2016 |
Pratidhina EFN, Kim S, Chang KJ. Design of Dipole-Allowed Direct Band Gaps in Ge/Sn Core–Shell Nanowires Journal of Physical Chemistry C. 120: 28169-28175. DOI: 10.1021/Acs.Jpcc.6B08779 |
0.4 |
|
2015 |
Oh YJ, Lee IH, Kim S, Lee J, Chang KJ. Dipole-allowed direct band gap silicon superlattices. Scientific Reports. 5: 18086. PMID 26656482 DOI: 10.1038/Srep18086 |
0.433 |
|
2015 |
Lee IH, Oh YJ, Kim S, Lee J, Chang KJ. Ab initio materials design using conformational space annealing and its application to searching for direct band gap silicon crystals Computer Physics Communications. DOI: 10.1016/J.Cpc.2016.02.011 |
0.376 |
|
2014 |
Lee I, Lee J, Oh YJ, Kim S, Chang K. Computational search for direct band gap silicon crystals Physical Review B. 90: 115209-115209. DOI: 10.1103/Physrevb.90.115209 |
0.41 |
|
2014 |
Kim S, Chang K, Park J. Finite-size supercell correction scheme for charged defects in one-dimensional systems Physical Review B. 90: 85435-85435. DOI: 10.1103/Physrevb.90.085435 |
0.648 |
|
2012 |
Kim S, Park JS, Chang KJ. Stability and segregation of B and P dopants in Si/SiO2 core-shell nanowires. Nano Letters. 12: 5068-73. PMID 22985080 DOI: 10.1021/Nl3013924 |
0.646 |
|
Show low-probability matches. |