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Babak Fallahazad - Publications

Affiliations: 
2015 University of Texas at Austin, Austin, Texas, U.S.A. 
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31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Movva HCP, Lovorn T, Fallahazad B, Larentis S, Kim K, Taniguchi T, Watanabe K, Banerjee SK, MacDonald AH, Tutuc E. Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}. Physical Review Letters. 120: 107703. PMID 29570322 DOI: 10.1103/Physrevlett.120.107703  0.774
2018 Larentis S, Movva HCP, Fallahazad B, Kim K, Behroozi A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Large effective mass and interaction-enhanced Zeeman splitting of K -valley electrons in MoSe2 Physical Review B. 97. DOI: 10.1103/Physrevb.97.201407  0.795
2017 Movva HCP, Fallahazad B, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}. Physical Review Letters. 118: 247701. PMID 28665633 DOI: 10.1103/Physrevlett.118.247701  0.794
2017 Burg GW, Prasad N, Fallahazad B, Valsaraj A, Kim K, Taniguchi T, Watanabe K, Wang Q, Kim MJ, Register LF, Tutuc E. Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene - WSe2 Heterostructures. Nano Letters. PMID 28557462 DOI: 10.1021/Acs.Nanolett.7B01505  0.774
2017 Larentis S, Fallahazad B, Movva HCP, Kim K, Rai A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits. Acs Nano. PMID 28414214 DOI: 10.1021/Acsnano.7B01306  0.797
2017 Kim K, DaSilva A, Huang S, Fallahazad B, Larentis S, Taniguchi T, Watanabe K, LeRoy BJ, MacDonald AH, Tutuc E. Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. PMID 28292902 DOI: 10.1073/Pnas.1620140114  0.837
2017 Lee K, Jung J, Fallahazad B, Tutuc E. Transport spectroscopy in bilayer graphene using double layer heterostructures 2d Materials. 4: 035018. DOI: 10.1088/2053-1583/AA7BCF  0.649
2017 Kang S, Mou X, Fallahazad B, Prasad N, Wu X, Valsaraj A, Movva HCP, Kim K, Tutuc E, Register LF, Banerjee SK. Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications Journal of Physics D: Applied Physics. 50: 383002. DOI: 10.1088/1361-6463/Aa8047  0.724
2016 Kim K, Yankowitz M, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Correction to van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 27526261 DOI: 10.1021/Acs.Nanolett.6B03255  0.738
2016 Dabidian N, Dutta Gupta S, Kholmanov I, Lai K, Lu F, Lee J, Jin M, Trendafilov S, Khanikaev A, Fallahazad B, Tutuc E, Belkin MA, Shvets G. Experimental Demonstration of Phase Modulation and Motion Sensing Using Graphene-Integrated Metasurfaces. Nano Letters. PMID 27152557 DOI: 10.1021/Acs.Nanolett.6B00732  0.679
2016 Fallahazad B, Movva HC, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility. Physical Review Letters. 116: 086601. PMID 26967432 DOI: 10.1103/Physrevlett.116.086601  0.778
2016 Kim K, Yankowitz MA, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 26859527 DOI: 10.1021/Acs.Nanolett.5B05263  0.815
2016 Movva HCP, Kang S, Rai A, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK. Room temperature gate-tunable negative differential resistance in MoS2/hBN/WSe2 heterostructures Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548486  0.316
2015 Movva HC, Rai A, Kang S, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors. Acs Nano. PMID 26343531 DOI: 10.1021/Acsnano.5B04611  0.801
2015 Kim K, Larentis S, Fallahazad B, Lee K, Xue J, Dillen DC, Corbet CM, Tutuc E. Band Alignment in WSe2-Graphene Heterostructures. Acs Nano. 9: 4527-32. PMID 25768037 DOI: 10.1021/Acsnano.5B01114  0.8
2015 Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33. PMID 25436861 DOI: 10.1021/Nl503756Y  0.801
2015 Kang S, Fallahazad B, Lee K, Movva H, Kim K, Corbet CM, Taniguchi T, Watanabe K, Colombo L, Register LF, Tutuc E, Banerjee SK. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET Ieee Electron Device Letters. 36: 405-407. DOI: 10.1109/Led.2015.2398737  0.806
2015 Tutuc E, Fallahazad B, Kang S, Lee K, Kim K, Movva HCP, Mou X, Corbet CM, Register LF, Banerjee SK, Taniguchi T, Watanabe K. Gate tunable resonant tunneling in graphene-based heterostructures and device applications Device Research Conference - Conference Digest, Drc. 2015: 269-270. DOI: 10.1109/DRC.2015.7175677  0.778
2014 Lee K, Fallahazad B, Xue J, Dillen DC, Kim K, Taniguchi T, Watanabe K, Tutuc E. Bilayer graphene. Chemical potential and quantum Hall ferromagnetism in bilayer graphene. Science (New York, N.Y.). 345: 58-61. PMID 24994645 DOI: 10.1126/Science.1251003  0.828
2014 Larentis S, Tolsma JR, Fallahazad B, Dillen DC, Kim K, MacDonald AH, Tutuc E. Band offset and negative compressibility in graphene-MoS2 heterostructures. Nano Letters. 14: 2039-45. PMID 24611616 DOI: 10.1021/Nl500212S  0.813
2013 Hao Y, Bharathi MS, Wang L, Liu Y, Chen H, Nie S, Wang X, Chou H, Tan C, Fallahazad B, Ramanarayan H, Magnuson CW, Tutuc E, Yakobson BI, McCarty KF, et al. The role of surface oxygen in the growth of large single-crystal graphene on copper. Science (New York, N.Y.). 342: 720-3. PMID 24158906 DOI: 10.1126/Science.1243879  0.65
2013 Liu E, Dillen DC, Nah J, Fallahazad B, Kim K, Tutuc E. Realization and Scaling of ${\rm Ge}{\hbox{--}}{\rm Si}_{1{\hbox{-}}{\rm x}}{\rm Ge}_{\rm x}$ Core-Shell Nanowire $n$-FETs Ieee Transactions On Electron Devices. 60: 4027-4033. DOI: 10.1109/Ted.2013.2285711  0.749
2013 Lee K, Fallahazad B, Min H, Tutuc E. Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as Dielectrics Ieee Transactions On Electron Devices. 60: 103-108. DOI: 10.1109/Ted.2012.2228203  0.783
2012 Kim S, Jo I, Dillen DC, Ferrer DA, Fallahazad B, Yao Z, Banerjee SK, Tutuc E. Direct measurement of the Fermi energy in graphene using a double-layer heterostructure. Physical Review Letters. 108: 116404. PMID 22540496 DOI: 10.1103/Physrevlett.108.116404  0.824
2012 Fallahazad B, Hao Y, Lee K, Kim S, Ruoff RS, Tutuc E. Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition Physical Review B. 85. DOI: 10.1103/Physrevb.85.201408  0.809
2012 Larentis S, Fallahazad B, Tutuc E. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers Applied Physics Letters. 101: 223104. DOI: 10.1063/1.4768218  0.812
2012 Zhang Y, Hosseini A, Ahn J, Kwong DN, Fallahazad B, Tutuc E, Chen RT. Vertically integrated double-layer on-chip silicon membranes for 1-to-12 waveguide fanouts Applied Physics Letters. 100: 181102. DOI: 10.1063/1.4709489  0.573
2012 Fallahazad B, Lee K, Lian G, Kim S, Corbet CM, Ferrer DA, Colombo L, Tutuc E. Scaling of Al2O3 dielectric for graphene field-effect transistors Applied Physics Letters. 100: 093112. DOI: 10.1063/1.3689785  0.753
2011 Gunawan O, Wang K, Fallahazad B, Zhang Y, Tutuc E, Guha S. High performance wire-array silicon solar cells Progress in Photovoltaics: Research and Applications. 19: 307-312. DOI: 10.1002/Pip.1027  0.555
2010 Wang KA, Gunawan O, Moumen N, Tulevski G, Mohamed H, Fallahazad B, Tutuc E, Guha S. Wire textured, multi-crystalline Si solar cells created using self-assembled masks. Optics Express. 18: A568-74. PMID 21165090 DOI: 10.1364/Oe.18.00A568  0.551
2010 Fallahazad B, Kim S, Colombo L, Tutuc E. Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric Applied Physics Letters. 97: 123105. DOI: 10.1063/1.3492843  0.778
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