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Tsung-ta Ho, Ph.D. - Publications

Affiliations: 
2010 Pennsylvania State University, State College, PA, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Solid State Physics
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5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Sarpatwari K, Awadelkarim OO, Passmore LJ, Ho TT, Kuo MW, Dellas NS, Mayer TS, Mohney SE. Low-frequency three-terminal charge pumping applied to silicon nanowire field-effect transistors Ieee Transactions On Nanotechnology. 10: 871-874. DOI: 10.1109/Tnano.2010.2087392  0.547
2008 Ho TT, Wang Y, Eichfeld S, Lew KK, Liu B, Mohney SE, Redwing JM, Mayer TS. In situ axially doped n-channel silicon nanowire field-effect transistors. Nano Letters. 8: 4359-64. PMID 19367848 DOI: 10.1021/Nl8022059  0.588
2008 Liu B, Wang Y, Ho TT, Lew KK, Eichfeld SM, Redwing JM, Mayer TS, Mohney SE. Oxidation of silicon nanowires for top-gated field effect transistors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 370-374. DOI: 10.1116/1.2899333  0.556
2007 Eichfeld SM, Ho TT, Eichfeld CM, Cranmer A, Mohney SE, Mayer TS, Redwing JM. Resistivity measurements of intentionally and unintentionally template-grown doped silicon nanowire arrays Nanotechnology. 18. DOI: 10.1088/0957-4484/18/31/315201  0.448
2005 Wang Y, Lew KK, Ho TT, Pan L, Novak SW, Dickey EC, Redwing JM, Mayer TS. Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires. Nano Letters. 5: 2139-43. PMID 16277441 DOI: 10.1021/Nl051442H  0.528
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