Year |
Citation |
Score |
2013 |
Ho B, Xu N, Wood B, Tran V, Chopra S, Kim Y, Nguyen B, Bonnin O, Mazure C, Kuppurao S, Chang C, Liu TK. Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width Dependence Ieee Transactions On Electron Devices. 60: 153-158. DOI: 10.1109/Ted.2012.2230175 |
0.592 |
|
2013 |
Ho B, Sun X, Shin C, Liu TK. Design Optimization of Multigate Bulk MOSFETs Ieee Transactions On Electron Devices. 60: 28-33. DOI: 10.1109/Ted.2012.2224870 |
0.637 |
|
2012 |
Ho B, Sun X, Xu N, Sako T, Maekawa K, Tomoyasu M, Akasaka Y, Bonnin O, Nguyen B, Liu TK. First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved Scalability Ieee Transactions On Electron Devices. 59: 2273-2276. DOI: 10.1109/Ted.2012.2201721 |
0.621 |
|
2012 |
Matheu P, Ho B, Jacobson ZA, Liu TJK. Planar GeOI TFET performance improvement with back biasing Ieee Transactions On Electron Devices. 59: 1629-1635. DOI: 10.1109/Ted.2012.2191410 |
0.647 |
|
2012 |
Xu N, Ho B, Choi M, Moroz V, Liu TJK. Effectiveness of stressors in aggressively scaled FinFETs Ieee Transactions On Electron Devices. 59: 1592-1598. DOI: 10.1109/Ted.2012.2189861 |
0.55 |
|
2012 |
Ho B, Xu N, Liu TK. pMOSFET Performance Enhancement With Strained Channels Ieee Transactions On Electron Devices. 59: 1468-1474. DOI: 10.1109/Ted.2012.2186576 |
0.515 |
|
2012 |
Xu N, Ho B, Andrieu F, Smith L, Nguyen B, Weber O, Poiroux T, Faynot O, Liu TK. Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs Ieee Electron Device Letters. 33: 318-320. DOI: 10.1109/Led.2011.2179113 |
0.52 |
|
2011 |
Ho B, Xu N, Liu TK. Study of High-Performance Ge pMOSFET Scaling Accounting for Direct Source-to-Drain Tunneling Ieee Transactions On Electron Devices. 58: 2895-2902. DOI: 10.1109/Ted.2011.2159008 |
0.6 |
|
2010 |
Ho B, Vega R, King-Liu T. Study of Germanium Epitaxial Recrystallization on Bulk-Si Substrates Mrs Proceedings. 1252. DOI: 10.1557/Proc-1252-I07-03 |
0.575 |
|
2010 |
Lee D, Tran H, Ho B, Liu TK. Electrical Characterization of Etch Rate for Micro- and Nano-Scale Gap Formation Ieee\/Asme Journal of Microelectromechanical Systems. 19: 1260-1263. DOI: 10.1109/Jmems.2010.2067432 |
0.559 |
|
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