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Siddhartha Ghosh, Ph.D. - Publications

Affiliations: 
2003 University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
semiconductors
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47 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Narayanan S, Dutta D, Arora N, Sahoo L, Ghosh SS. Phytaspase-loaded, Mn-doped ZnS quantum dots when embedded into chitosan nanoparticles leads to improved chemotherapy of HeLa cells using in cisplatin. Biotechnology Letters. PMID 28730426 DOI: 10.1007/s10529-017-2395-1  0.336
2013 Saha AK, Sharma P, Sohn HB, Ghosh S, Das RK, Hebard AF, Zeng H, Baligand C, Walter GA, Moudgil BM. Fe Doped CdTeS Magnetic Quantum Dots for Bioimaging. Journal of Materials Chemistry. B, Materials For Biology and Medicine. 1: 6312-6320. PMID 24634776 DOI: 10.1039/C3Tb20859A  0.314
2011 Banerjee K, Huang J, Ghosh S, Xu R, Takoudis CG, Plis E, Krishna S, Ketharanathan S, Chriss M. Surface study of thioacetamide and zinc sulfide passivated long wavelength infrared type-II strained layer superlattice Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.900198  0.391
2010 Ray M, Hossain SM, Klie RF, Banerjee K, Ghosh S. Free standing luminescent silicon quantum dots: evidence of quantum confinement and defect related transitions. Nanotechnology. 21: 505602. PMID 21098931 DOI: 10.1088/0957-4484/21/50/505602  0.376
2010 Ghosh S, Banerjee K, Duan Q, Grein CH, Plis EA, Krishna S, Hayat MM. Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.858012  0.451
2010 Banerjee K, Ghosh S, Plis E, Krishna S. Study of short-and long-term effectiveness of ammonium sulfide as surface passivation for InAs/GaSb superlattices using X-ray photoelectron spectroscopy Journal of Electronic Materials. 39: 2210-2214. DOI: 10.1007/S11664-010-1298-X  0.367
2009 Banerjee K, Ghosh S, Mallick S, Plis E, Krishna S, Grein C. Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode Applied Physics Letters. 94. DOI: 10.1063/1.3139012  0.472
2009 Banerjee K, Ghosh S, Mallick S, Plis E, Krishna S. Electrical characterization of different passivation treatments for long-wave infrared InAs/GaSb strained layer superlattice photodiodes Journal of Electronic Materials. 38: 1944-1947. DOI: 10.1007/S11664-009-0850-Z  0.415
2008 Banerjee K, Mallick S, Ghosh S, Plis E, Krishna S, Grein C. Hole initiated mid wave infrared InAs/GaSb strained layer superlattice avalanche photodiode Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 298-299. DOI: 10.1109/LEOS.2008.4688608  0.401
2008 Plis E, Kim HS, Bishop G, Krishna S, Banerjee K, Ghosh S. Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors Applied Physics Letters. 93. DOI: 10.1063/1.2990049  0.432
2008 Rupani RA, Ghosh S, Su X, Bhattacharya P. Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors Microelectronics Journal. 39: 307-313. DOI: 10.1016/J.Mejo.2007.07.108  0.578
2008 Ghosh S, Mallick S, Banerjee K, Grein C, Velicu S, Zhao J, Silversmith D, Rodriguez JB, Plis E, Krishna S. Low-noise mid-wavelength infrared avalanche photodiodes Journal of Electronic Materials. 37: 1764-1769. DOI: 10.1007/S11664-008-0542-0  0.438
2007 Mallick S, Banerjee K, Ghosh S, Plis E, Rodriguez JB, Krishna S, Grein C. Ultralow noise midwave infrared InAs-GaSb strain layer superlattice avalanche photodiode Applied Physics Letters. 91. DOI: 10.1063/1.2817608  0.463
2004 Bhattacharya P, Ghosh S, Stiff-Roberts AD. Quantum dot opto-electronic devices Annual Review of Materials Research. 34: 1-40. DOI: 10.1146/Annurev.Matsci.34.040203.111535  0.728
2004 Fathpour S, Bhattacharya P, Ghosh S. Low linewidth enhancement factor and chirp and suppressed filamentation in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 5361: 29-34. DOI: 10.1117/12.537972  0.683
2004 Topol'ančik J, Pradhan S, Yu PC, Ghosh S, Bhattacharya P. Electrically injected photonic crystal edge-emitting quantum-dot light source Ieee Photonics Technology Letters. 16: 960-962. DOI: 10.1109/Lpt.2004.824657  0.678
2004 Lenihan AS, Dutt MVG, Steel DG, Ghosh S, Bhattacharya P. Biexcitonic resonance in the nonlinear optical response of an InAs quantum dot ensemble Physical Review B - Condensed Matter and Materials Physics. 69: 453061-453066. DOI: 10.1103/Physrevb.69.045306  0.467
2004 Holub M, Chakrabarti S, Fathpour S, Bhattacharya P, Lei Y, Ghosh S. Mn-doped InAs self-organized diluted magnetic quantum-dot layers with Curie temperatures above 300 K Applied Physics Letters. 85: 973-975. DOI: 10.1063/1.1781361  0.737
2004 Farina LA, Lewis KM, Kurdak C, Ghosh S, Krishna S, Bhattacharya P. Drag coupling between a thin Al film and a two-dimensional electron gas near the superconducting transition Physica E: Low-Dimensional Systems and Nanostructures. 22: 341-344. DOI: 10.1016/J.Physe.2003.12.016  0.419
2003 Bhattacharya P, Ghosh S. High-Speed Tunnel Injection InGaAs/GaAs Quantum Dot Lasers Proceedings of Spie - the International Society For Optical Engineering. 4986: 1-10. DOI: 10.1117/12.482327  0.392
2003 Bhattacharya P, Ghosh S, Pradhan S, Singh J, Wu ZK, Urayama J, Kim K, Norris TB. Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers Ieee Journal of Quantum Electronics. 39: 952-962. DOI: 10.1109/Jqe.2003.814374  0.303
2003 Kim K, Norris TB, Ghosh S, Singh J, Bhattacharya P. Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots Applied Physics Letters. 82: 1959-1961. DOI: 10.1063/1.1563732  0.454
2003 Fathpour S, Bhattacharya P, Pradhan S, Ghosh S. Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers Electronics Letters. 39: 1443-1445. DOI: 10.1049/El:20030944  0.688
2003 Kim K, Norris TB, Ghosh S, Singh J, Bhattacharya P. Temperature-dependent carrier distributions and level degeneracy in self-assembled quantum dots Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 89: QThI6/1-QThI6/2.  0.444
2003 Wu ZK, Kim K, Norris TB, Ghosh S, Bhattacharya PK. Ultrafast carrier dynamics in tunneling injection quantum dot lasers Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 89: QThI2/1-QThI2/2.  0.421
2003 Topolancik J, Pradhan S, Yu PC, Ghosh S, Bhattarcharya P. Electrically injected photonic crystal edge emitting quantum dot light source Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 210-211.  0.422
2003 Fathpour S, Bhattacharya P, Pradhan S, Ghosh S, Topolancik J. Modulation characteristics of In0.4Ga0.6As/GaAs quantum dot gain-coupled distributed feedback lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 202-203.  0.408
2003 Bhattacharya P, Fathpour S, Chakrabarti S, Holub M, Ghosh S. Application of diluted magnetic semiconductors and quantum dots to spin polarized light sources Materials Research Society Symposium - Proceedings. 794: 215-225.  0.39
2002 Lenihan AS, Gurudev Dutt MV, Steel DG, Ghosh S, Bhattacharya PK. Raman coherence beats from entangled polarization eigenstates in InAs quantum dots. Physical Review Letters. 88: 223601. PMID 12059418 DOI: 10.1103/Physrevlett.88.223601  0.614
2002 Ghosh S, Bhattacharya P. Electrical spin injection into In0.4Ga0.6As/GaAs quantum dots using (Ga,Mn)As Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1182-1184. DOI: 10.1116/1.1456521  0.302
2002 Ghosh S, Bhattacharya P, Wu ZK, Norris T, Singh J, Kochman B. Quantum dot tunnel injection lasers with large modulation bandwidth at room temperature Device Research Conference - Conference Digest, Drc. 2002: 137-138. DOI: 10.1109/DRC.2002.1029554  0.422
2002 Bhattacharya P, Ghosh S, Wu ZK, Norris T. High speed quantum dot lasers Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 2002: 17-23. DOI: 10.1109/COMMAD.2002.1237179  0.469
2002 Kochman B, Ghosh S, Singh J, Bhattacharya P. Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots Journal of Physics D: Applied Physics. 35: L65-L68. DOI: 10.1088/0022-3727/35/15/101  0.732
2002 Ghosh S, Pradhan S, Bhattacharya P. Dynamic characteristics of high-speed In0.4Ga 0.6As/GaAs self-organized quantum dot lasers at room temperature Applied Physics Letters. 81: 3055-3057. DOI: 10.1063/1.1514823  0.436
2002 Bhattacharya P, Ghosh S. Response to "comment on 'Tunnel injection In0.4Ga 0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature'" [Appl. Phys. Lett. 81, 2659 (2002)] Applied Physics Letters. 81: 2661-2662. DOI: 10.1063/1.1510944  0.383
2002 Bhattacharya P, Ghosh S. Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature Applied Physics Letters. 80: 3482-3484. DOI: 10.1063/1.1478129  0.442
2002 Ghosh S, Bhattacharya P. Surface-emitting spin-polarized In0.4Ga0.6As/GaAs quantum-dot light-emitting diode Applied Physics Letters. 80: 658-660. DOI: 10.1063/1.1436526  0.318
2002 Pradhan S, Ghosh S, Bhattacharya P. Temperature dependent steady-state characteristics of high-performance tunnel injection quantum dot lasers Electronics Letters. 38: 1449-1450. DOI: 10.1049/el:20020835  0.352
2002 Kochman B, Ghosh S, Singh J, Bhattacharya P. In-plane velocity-field characteristics of InAs self-assembled quantum dot layers Electronics Letters. 38: 752-753. DOI: 10.1049/El:20020504  0.743
2002 Bhattacharya P, Ghosh S. Spin polarized quantum dot light emitters Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 19-20.  0.486
2002 Pradhan S, Ghosh S, Bhattacharya P. Modulation characteristics of high-speed tunnel injection In0.4Ga0.6As quantum dot lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 27-28.  0.457
2002 Ghosh S, Bhattacharya P, Urayama J, Wu ZK, Norris T, Kamath KK. Tunnel injection quantum dot lasers Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 543.  0.463
2001 Ghosh S, Lenihan AS, Dutt MVG, Qasaimeh O, Steel DG, Bhattacharya P. Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1455-1458. DOI: 10.1116/1.1374623  0.696
2001 Lenihan AS, Dutt MVG, Steel DG, Ghosh S, Bhattacharya PK. Spin relaxation in InAs quantum dots probed by transient nonlinear optical spectroscopy Technical Digest - Summaries of Papers Presented At the Quantum Electronics and Laser Science Conference, Qels 2001. 5-6. DOI: 10.1109/QELS.2001.961773  0.347
2001 Ghosh S, Bhattacharya P, Stoner E, Singh J, Jiang H, Nuttinck S, Laskar J. Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots Applied Physics Letters. 79: 722-724. DOI: 10.1063/1.139140  0.498
2001 Ghosh S, Bhattacharya P, Stoner E, Jiang H, Nuttinck S, Singh J, Laskar J. Temperature-dependent large signal modulation and Auger recombination in In0.4Ga0.6As quantum-dot lasers Annual Device Research Conference Digest. 39-40.  0.465
2000 Ghosh S, Kochman B, Singh J, Bhattacharya P. Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy Applied Physics Letters. 76: 2571-2573.  0.447
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