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Kang L. Wang - Publications

Affiliations: 
1979- Electrical Engineering University of California, Los Angeles, Los Angeles, CA 
Area:
Nanoelectronics, spintronics and nanomagnetics, non-volatile electronics and low dissipation devices, quantum device and systems, frontier materials by molecular beam epitaxy, photonics and energy
Website:
https://cegn.kacst.edu.sa/team/kang-wang.html
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Year Citation  Score
2023 Qiu G, Yang HY, Hu L, Zhang H, Chen CY, Lyu Y, Eckberg C, Deng P, Krylyuk S, Davydov AV, Zhang R, Wang KL. Emergent ferromagnetism with superconductivity in Fe(Te,Se) van der Waals Josephson junctions. Nature Communications. 14: 6691. PMID 37872165 DOI: 10.1038/s41467-023-42447-4  0.628
2023 Qiu G, Yang HY, Chong SK, Cheng Y, Tai L, Wang KL. Manipulating Topological Phases in Magnetic Topological Insulators. Nanomaterials (Basel, Switzerland). 13. PMID 37836296 DOI: 10.3390/nano13192655  0.602
2023 Zhang P, Balakrishnan PP, Eckberg C, Deng P, Nozaki T, Chong SK, Quarterman P, Holtz ME, Maranville BB, Qiu G, Pan L, Emmanouilidou E, Ni N, Sahashi M, Grutter A, ... Wang KL, et al. Exchange-Biased Quantum Anomalous Hall Effect. Advanced Materials (Deerfield Beach, Fla.). e2300391. PMID 37207689 DOI: 10.1002/adma.202300391  0.616
2022 Tai L, Dai B, Li J, Huang H, Chong SK, Wong KL, Zhang H, Zhang P, Deng P, Eckberg C, Qiu G, He H, Wu D, Xu S, Davydov A, ... ... Wang KL, et al. Distinguishing the Two-Component Anomalous Hall Effect from the Topological Hall Effect. Acs Nano. PMID 36126321 DOI: 10.1021/acsnano.2c08155  0.596
2022 Deng P, Eckberg C, Zhang P, Qiu G, Emmanouilidou E, Yin G, Chong SK, Tai L, Ni N, Wang KL. Probing the mesoscopic size limit of quantum anomalous Hall insulators. Nature Communications. 13: 4246. PMID 35869045 DOI: 10.1038/s41467-022-31105-w  0.589
2022 Qiu G, Zhang P, Deng P, Chong SK, Tai L, Eckberg C, Wang KL. Mesoscopic Transport of Quantum Anomalous Hall Effect in the Submicron Size Regime. Physical Review Letters. 128: 217704. PMID 35687463 DOI: 10.1103/PhysRevLett.128.217704  0.628
2022 Qi L, Hu H, Wang Y, Hu H, Wang K, Li P, Yin J, Shi Y, Wang Y, Zhao Y, Lyu H, Feng M, Xue M, Li X, Li Y, et al. New insights into the central sympathetic hyperactivity post-myocardial infarction: Roles of METTL3-mediated m A methylation. Journal of Cellular and Molecular Medicine. PMID 35040253 DOI: 10.1111/jcmm.17183  0.307
2020 Yang CY, Pan L, Grutter AJ, Wang H, Che X, He QL, Wu Y, Gilbert DA, Shafer P, Arenholz E, Wu H, Yin G, Deng P, Borchers JA, Ratcliff W, ... Wang KL, et al. Termination switching of antiferromagnetic proximity effect in topological insulator. Science Advances. 6: eaaz8463. PMID 32851159 DOI: 10.1126/Sciadv.Aaz8463  0.322
2020 Wu Y, Zhang S, Zhang J, Wang W, Zhu YL, Hu J, Yin G, Wong K, Fang C, Wan C, Han X, Shao Q, Taniguchi T, Watanabe K, Zang J, ... ... Wang KL, et al. Néel-type skyrmion in WTe/FeGeTe van der Waals heterostructure. Nature Communications. 11: 3860. PMID 32737289 DOI: 10.1038/S41467-020-17566-X  0.376
2020 Zhao L, Wang Z, Zhang X, Liang X, Xia J, Wu K, Zhou HA, Dong Y, Yu G, Wang KL, Liu X, Zhou Y, Jiang W. Topology-Dependent Brownian Gyromotion of a Single Skyrmion. Physical Review Letters. 125: 027206. PMID 32701308 DOI: 10.1103/Physrevlett.125.027206  0.331
2020 Pan L, Grutter A, Zhang P, Che X, Nozaki T, Stern A, Street M, Zhang B, Casas B, He QL, Choi ES, Disseler SM, Gilbert DA, Yin G, Shao Q, ... ... Wang KL, et al. Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure. Advanced Materials (Deerfield Beach, Fla.). e2001460. PMID 32691882 DOI: 10.1002/Adma.202001460  0.361
2020 Wang H, Liu Y, Wu P, Hou W, Jiang Y, Li X, Pandey C, Chen D, Yang Q, Wang H, Wei D, Lei N, Kang W, Wen L, Nie T, ... ... Wang KL, et al. Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe3GeTe2 Tailored by Topological Insulator. Acs Nano. PMID 32686930 DOI: 10.1021/Acsnano.0C03152  0.381
2020 Wu H, Groß F, Dai B, Lujan D, Razavi SA, Zhang P, Liu Y, Sobotkiewich K, Förster J, Weigand M, Schütz G, Li X, Gräfe J, Wang KL. Ferrimagnetic Skyrmions in Topological Insulator/Ferrimagnet Heterostructures. Advanced Materials (Deerfield Beach, Fla.). e2003380. PMID 32666575 DOI: 10.1002/Adma.202003380  0.349
2020 Pan L, Liu X, He QL, Stern A, Yin G, Che X, Shao Q, Zhang P, Deng P, Yang CY, Casas B, Choi ES, Xia J, Kou X, Wang KL. Probing the low-temperature limit of the quantum anomalous Hall effect. Science Advances. 6: eaaz3595. PMID 32596443 DOI: 10.1126/Sciadv.Aaz3595  0.368
2020 Tu S, Ziman T, Yu G, Wan C, Hu J, Wu H, Wang H, Liu M, Liu C, Guo C, Zhang J, Cabero Z MA, Zhang Y, Gao P, Liu S, ... ... Wang KL, et al. Record thermopower found in an IrMn-based spintronic stack. Nature Communications. 11: 2023. PMID 32332726 DOI: 10.1038/S41467-020-15797-6  0.355
2020 Razavi A, Wu H, Shao Q, Fang C, Dai B, Wong KL, Han X, Yu G, Wang KL. Deterministic spin-orbit torque switching by a light-metal insertion. Nano Letters. PMID 32227904 DOI: 10.1021/Acs.Nanolett.0C00647  0.333
2020 Che X, Pan Q, Vareskic B, Zou J, Pan L, Zhang P, Yin G, Wu H, Shao Q, Deng P, Wang KL. Strongly Surface State Carrier-Dependent Spin-Orbit Torque in Magnetic Topological Insulators. Advanced Materials (Deerfield Beach, Fla.). e1907661. PMID 32108391 DOI: 10.1002/Adma.201907661  0.345
2020 Xiao Z, Lo Conte R, Goiriena-Goikoetxea M, Chopdekar RV, Lambert CH, Li X, N'Diaye AT, Shafer P, Tiwari S, Barra A, Chavez A, Mohanchandra KP, Carman GP, Wang K, Salahuddin S, et al. Tunable Magnetoelastic Effect in Voltage-controlled Exchange-coupled Composite Multiferroic Microstructures. Acs Applied Materials & Interfaces. PMID 31927947 DOI: 10.1021/Acsami.9B20876  0.347
2020 Wang KL, Wu Y, Eckberg C, Yin G, Pan Q. Topological quantum materials Mrs Bulletin. 45: 373-379. DOI: 10.1557/Mrs.2020.122  0.335
2020 He C, Razavi SA, Yu G, Ma X, Wu H, Shao Q, Wong KL, Shen S, Zhao Y, Pei Y, Chen Q, Li X, Wang S, Wang KL. Study of the perpendicular magnetic anisotropy, spin–orbit torque, and Dzyaloshinskii–Moriya interaction in the heavy metal/CoFeB bilayers with Ir22Mn78 insertion Applied Physics Letters. 116: 242407. DOI: 10.1063/5.0006138  0.333
2020 Wang Z, Wu H, Burr GW, Hwang CS, Wang KL, Xia Q, Yang JJ. Resistive switching materials for information processing Nature Reviews Materials. 5: 173-195. DOI: 10.1038/S41578-019-0159-3  0.306
2020 Cui B, Wu H, Chang M, Yun J, Zuo Y, Gao M, Wang KL, Xi L. Investigating the influence of the depinning energy barrier on domain wall motion in perpendicularly magnetized Pt/Co/Cr/Ta multilayers Journal of Magnetism and Magnetic Materials. 493: 165676. DOI: 10.1016/J.Jmmm.2019.165676  0.302
2019 Shen J, Lyu J, Gao JZ, Xie YM, Chen CZ, Cho CW, Atanov O, Chen Z, Liu K, Hu YJ, Yip KY, Goh SK, He QL, Pan L, Wang KL, et al. Spectroscopic fingerprint of chiral Majorana modes at the edge of a quantum anomalous Hall insulator/superconductor heterostructure. Proceedings of the National Academy of Sciences of the United States of America. PMID 31852824 DOI: 10.1073/Pnas.1910967117  0.319
2019 Wu H, Zhang P, Deng P, Lan Q, Pan Q, Razavi SA, Che X, Huang L, Dai B, Wong K, Han X, Wang KL. Room-Temperature Spin-Orbit Torque from Topological Surface States. Physical Review Letters. 123: 207205. PMID 31809108 DOI: 10.1103/Physrevlett.123.207205  0.313
2019 Li X, Sasaki T, Grezes C, Wu D, Wong KL, Bi C, Ong PV, Ebrahimi F, Yu G, Kioussis N, Wang W, Ohkubo T, Khalili Amiri P, Wang KL. Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution. Nano Letters. PMID 31697502 DOI: 10.1021/Acs.Nanolett.9B03190  0.363
2019 Cui B, Wu H, Li D, Razavi SA, Wu D, Wong KL, Chang M, Gao M, Zuo Y, Xi L, Wang KL. Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface. Acs Applied Materials & Interfaces. PMID 31603641 DOI: 10.1021/Acsami.9B13622  0.347
2019 Tsai SH, Lei S, Zhu X, Tsai SP, Yin G, Che X, Deng P, Ng J, Zhang X, Lin WH, Jin Z, Qasem H, Vajtai R, Yeh NC, Ajayan PM, ... ... Wang KL, et al. Interfacial States and Fano-Feshbach Resonance in Graphene-Silicon Vertical Junction. Nano Letters. PMID 31545901 DOI: 10.1021/Acs.Nanolett.9B01658  0.378
2019 Wu H, Xu Y, Deng P, Pan Q, Razavi SA, Wong K, Huang L, Dai B, Shao Q, Yu G, Han X, Rojas-Sánchez JC, Mangin S, Wang KL. Spin-Orbit Torque Switching of a Nearly Compensated Ferrimagnet by Topological Surface States. Advanced Materials (Deerfield Beach, Fla.). e1901681. PMID 31282067 DOI: 10.1002/Adma.201901681  0.348
2019 Zhou J, Qiao J, Duan CG, Bournel A, Wang KL, Zhao W. Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction. Acs Applied Materials & Interfaces. PMID 30983319 DOI: 10.1021/Acsami.9B02493  0.389
2019 Liu W, Xu Y, He L, van der Laan G, Zhang R, Wang K. Experimental observation of dual magnetic states in topological insulators. Science Advances. 5: eaav2088. PMID 30783626 DOI: 10.1126/Sciadv.Aav2088  0.353
2019 Fan Y, Shao Q, Pan L, Che X, He QL, Yin G, Zheng C, Yu G, Nie T, Masir MR, MacDonald AH, Wang KL. Unidirectional Magneto-Resistance in Modulation-doped Magnetic Topological Insulators. Nano Letters. PMID 30685979 DOI: 10.1021/Acs.Nanolett.8B03702  0.355
2019 Jiang HW, Johnson CE, Wang KL, Hannahs ST. Observation of magnetic-field-induced delocalization: Transition from Anderson insulator to quantum Hall conductor. Physical Review Letters. 71: 1439-1442. PMID 10055540 DOI: 10.1103/Physrevlett.71.1439  0.338
2019 Jiang HW, Johnson CE, Wang KL. Giant negative magnetoresistance of a degenerate two-dimensional electron gas in the variable-range-hopping regime. Physical Review. B, Condensed Matter. 46: 12830-12833. PMID 10003220 DOI: 10.1103/Physrevb.46.12830  0.309
2019 Cui B, Yun J, Yang K, Wu H, Zhu Z, Zuo Y, Yang D, Gao M, Zhang Z, Xi L, Wang KL. Current induced magnetization switching in Pt/Co/Cr structures with enhanced perpendicular magnetic anisotropy and spin Hall effect Applied Physics Express. 12: 43001. DOI: 10.7567/1882-0786/Ab0A42  0.32
2019 Gao T, Zeng L, Zhang D, Zhang Y, Wang KL, Zhao W. Compact Model for Negative Capacitance Enhanced Spintronics Devices Ieee Transactions On Electron Devices. 66: 2795-2801. DOI: 10.1109/Ted.2019.2908957  0.349
2019 Jenkins A, Pelliccione M, Yu G, Ma X, Li X, Wang KL, Jayich ACB. Single-spin sensing of domain-wall structure and dynamics in a thin-film skyrmion host Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.083801  0.332
2019 Wu H, Razavi SA, Shao Q, Li X, Wong KL, Liu Y, Yin G, Wang KL. Spin-orbit torque from a ferromagnetic metal Physical Review B. 99: 184403. DOI: 10.1103/Physrevb.99.184403  0.313
2019 Shao Q, Grutter A, Liu Y, Yu G, Yang C, Gilbert DA, Arenholz E, Shafer P, Che X, Tang C, Aldosary M, Navabi A, He QL, Kirby BJ, Shi J, ... Wang KL, et al. Exploring interfacial exchange coupling and sublattice effect in heavy metal/ferrimagnetic insulator heterostructures using Hall measurements, x-ray magnetic circular dichroism, and neutron reflectometry Physical Review B. 99. DOI: 10.1103/Physrevb.99.104401  0.318
2019 Wang Z, Zhang X, Xia J, Zhao L, Wu K, Yu G, Wang KL, Liu X, te Velthuis SGE, Hoffmann A, Zhou Y, Jiang W. Generation and Hall effect of skyrmions enabled using nonmagnetic point contacts Physical Review B. 100. DOI: 10.1103/Physrevb.100.184426  0.346
2019 Yang H, Zhang B, Zhang X, Yan X, Cai W, Zhao Y, Sun J, Wang KL, Zhu D, Zhao W. Giant Charge-to-Spin Conversion Efficiency in Sr Ti O 3 -Based Electron Gas Interface Physical Review Applied. 12: 34004. DOI: 10.1103/Physrevapplied.12.034004  0.325
2019 Drobitch JL, Hsiao Y, Wu H, Wang KL, Lynch CS, Bussmann K, Bandyopadhyay S, Gopman DB. Effect of CoFe dusting layer and annealing on the magnetic properties of sputtered Ta/W/CoFeB/CoFe/MgO layer structures Journal of Physics D: Applied Physics. 53: 105001. DOI: 10.1088/1361-6463/Ab5C97  0.308
2019 Grezes C, Li X, Wong KL, Ebrahimi F, Amiri PK, Wang KL. Voltage-controlled magnetic tunnel junctions with synthetic ferromagnet free layer sandwiched by asymmetric double MgO barriers Journal of Physics D. 53: 14006. DOI: 10.1088/1361-6463/Ab4856  0.334
2019 Shao Q, Liu Y, Yu G, Kim SK, Che X, Tang C, He QL, Tserkovnyak Y, Shi J, Wang KL. Topological Hall effect at above room temperature in heterostructures composed of a magnetic insulator and a heavy metal Arxiv: Materials Science. 2: 182-186. DOI: 10.1038/S41928-019-0246-X  0.35
2019 Ren N, Hu H, Lyu X, Wu J, Xu H, Li R, Zuo Z, Wang K, Sheng K. Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT Solid-State Electronics. 152: 33-40. DOI: 10.1016/J.Sse.2018.11.010  0.337
2018 Fox EJ, Rosen IT, Yang Y, Jones GR, Elmquist RE, Kou X, Pan L, Wang KL, Goldhaber-Gordon D. Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect. Physical Review. B. 98. PMID 30984899 DOI: 10.1103/Physrevb.98.075145  0.353
2018 He QL, Yin G, Yu L, Grutter AJ, Pan L, Chen CZ, Che X, Yu G, Zhang B, Shao Q, Stern AL, Casas B, Xia J, Han X, Kirby BJ, ... ... Wang KL, et al. Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator. Physical Review Letters. 121: 096802. PMID 30230908 DOI: 10.1103/Physrevlett.121.096802  0.332
2018 Shao Q, Tang C, Yu G, Navabi A, Wu H, He C, Li J, Upadhyaya P, Zhang P, Razavi SA, He QL, Liu Y, Yang P, Kim SK, Zheng C, ... ... Wang KL, et al. Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films. Nature Communications. 9: 3612. PMID 30190509 DOI: 10.1038/S41467-018-06059-7  0.347
2018 He QL, Yin G, Grutter AJ, Pan L, Che X, Yu G, Gilbert DA, Disseler SM, Liu Y, Shafer P, Zhang B, Wu Y, Kirby BJ, Arenholz E, Lake RK, ... ... Wang KL, et al. Exchange-biasing topological charges by antiferromagnetism. Nature Communications. 9: 2767. PMID 30018306 DOI: 10.1038/S41467-018-05166-9  0.321
2018 Biswas C, Candan I, Alaskar Y, Qasem H, Zhang W, Stieg AZ, Xie YH, Wang KL. Layer-by-layer hybrid chemical doping for high transmittance uniformity in graphene-polymer flexible transparent conductive nanocomposite. Scientific Reports. 8: 10259. PMID 29980765 DOI: 10.1038/S41598-018-28658-6  0.343
2018 Che X, Murata K, Pan L, He QL, Yu G, Shao Q, Yin G, Deng P, Fan Y, Ma B, Liang X, Zhang B, Han X, Bi L, Yang QH, ... ... Wang KL, et al. Proximity-Induced Magnetic Order in a Transferred Topological Insulator Thin Film on a Magnetic Insulator. Acs Nano. PMID 29733577 DOI: 10.1021/Acsnano.8B02647  0.348
2018 Zhu X, Lei S, Tsai SH, Zhang X, Liu J, Yin G, Tang M, Torres CM, Navabi A, Jin Z, Tsai SP, Qasem H, Wang Y, Vajtai R, Lake RK, ... ... Wang KL, et al. A Study of Vertical Transport through Graphene towards Control of Quantum Tunneling. Nano Letters. PMID 29300487 DOI: 10.1021/Acs.Nanolett.7B03221  0.389
2018 Li X, Lee A, Razavi SA, Wu H, Wang KL. Voltage-controlled magnetoelectric memory and logic devices Mrs Bulletin. 43: 970-977. DOI: 10.1557/Mrs.2018.298  0.345
2018 Peng S, Wang L, Li X, Wang Z, Zhou J, Qiao J, Chen R, Zhang Y, Wang KL, Zhao W. Enhancement of Perpendicular Magnetic Anisotropy Through Fe Insertion at the CoFe/W Interface Ieee Transactions On Magnetics. 54: 1-5. DOI: 10.1109/Tmag.2018.2848303  0.339
2018 Lee H, Lee A, Wang S, Ebrahimi F, Gupta P, Amiri PK, Wang KL. Analysis and Compact Modeling of Magnetic Tunnel Junctions Utilizing Voltage-Controlled Magnetic Anisotropy Ieee Transactions On Magnetics. 54: 1-9. DOI: 10.1109/Tmag.2017.2788010  0.318
2018 Wang L, Kang W, Ebrahimi F, Li X, Huang Y, Zhao C, Wang KL, Zhao W. Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation Ieee Electron Device Letters. 39: 440-443. DOI: 10.1109/Led.2018.2791510  0.319
2018 Dowben PA, Binek C, Zhang K, Wang L, Mei W, Bird JP, Singisetti U, Hong X, Wang KL, Nikonov D. Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 4: 1-9. DOI: 10.1109/Jxcdc.2018.2809640  0.36
2018 Qu D, Che X, Kou X, Pan L, Crowhurst J, Armstrong MR, Dubois J, Wang KL, Chapline GF. Anomalous helicity-dependent photocurrent in the topological insulator ( Bi0.5Sb0.5 ) 2Te3 on a GaAs substrate Physical Review B. 97. DOI: 10.1103/Physrevb.97.045308  0.389
2018 Wang Q, Domann J, Yu G, Barra A, Wang KL, Carman GP. Strain-Mediated Spin-Orbit-Torque Switching for Magnetic Memory Physical Review Applied. 10. DOI: 10.1103/Physrevapplied.10.034052  0.34
2018 Huang Y, Li X, Wang L, Yu G, Wang KL, Zhao W. Interface control of domain wall depinning field Aip Advances. 8: 56314. DOI: 10.1063/1.5007270  0.32
2018 Guan B, Li P, Arafin S, Alaskar Y, Wang KL. Investigation of Single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR Photonics and Nanostructures: Fundamentals and Applications. 28: 56-60. DOI: 10.1016/J.Photonics.2017.07.005  0.343
2017 Yu G, Jenkins A, Ma X, Razavi SA, He C, Yin G, Shao Q, He QL, Wu H, Li W, Jiang W, Han X, Li XE, Bleszynski Jayich AC, Amiri PK, ... Wang KL, et al. Room-temperature skyrmions in an antiferromagnet-based heterostructure. Nano Letters. PMID 29271208 DOI: 10.1021/Acs.Nanolett.7B04400  0.362
2017 Mahoney AC, Colless JI, Peeters L, Pauka SJ, Fox EJ, Kou X, Pan L, Wang KL, Goldhaber-Gordon D, Reilly DJ. Zero-field edge plasmons in a magnetic topological insulator. Nature Communications. 8: 1836. PMID 29184065 DOI: 10.1038/S41467-017-01984-5  0.363
2017 Lin CY, Zhu X, Tsai SH, Tsai SP, Lei S, Li MY, Shi Y, Li LJ, Huang SJ, Wu WF, Yeh WK, Su YK, Wang KL, Lan YW. Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon. Acs Nano. PMID 28976732 DOI: 10.1021/Acsnano.7B05012  0.353
2017 Koumoulis D, Taylor RE, McCormick J, Ertas YN, Pan L, Che X, Wang KL, Bouchard LS. Effects of Cd vacancies and unconventional spin dynamics in the Dirac semimetal Cd3As2. The Journal of Chemical Physics. 147: 084706. PMID 28863530 DOI: 10.1063/1.4999467  0.314
2017 Ma X, Yu G, Razavi SA, Sasaki SS, Li X, Hao K, Tolbert SH, Wang KL, Li X. Dzyaloshinskii-Moriya Interaction across an Antiferromagnet-Ferromagnet Interface. Physical Review Letters. 119: 027202. PMID 28753324 DOI: 10.1103/Physrevlett.119.027202  0.341
2017 He QL, Pan L, Stern AL, Burks EC, Che X, Yin G, Wang J, Lian B, Zhou Q, Choi ES, Murata K, Kou X, Chen Z, Nie T, Shao Q, ... ... Wang KL, et al. Chiral Majorana fermion modes in a quantum anomalous Hall insulator-superconductor structure. Science (New York, N.Y.). 357: 294-299. PMID 28729508 DOI: 10.1126/Science.Aag2792  0.339
2017 Nie T, Kou X, Tang J, Fan Y, Lee S, He Q, Chang LT, Murata K, Gen Y, Wang KL. Nanoengineering of an Si/MnGe quantum dot superlattice for high Curie-temperature ferromagnetism. Nanoscale. PMID 28195299 DOI: 10.1039/C6Nr08688H  0.589
2017 Suhara T, Murata K, Navabi A, Hara KO, Nakagawa Y, Trinh CT, Kurokawa Y, Suemasu T, Wang KL, Usami N. Postannealing effects on undoped BaSi2evaporated films grown on Si substrates Japanese Journal of Applied Physics. 56. DOI: 10.7567/Jjap.56.05Db05  0.302
2017 Zeng L, Gao T, Zhang D, Peng S, Wang L, Gong F, Qin X, Long M, Zhang Y, Wang KL, Zhao W. Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect Ieee Transactions On Electron Devices. 64: 4919-4927. DOI: 10.1109/Ted.2017.2761877  0.328
2017 Wang S, Pan A, Grezes C, Amiri PK, Wang KL, Chui CO, Gupta P. Leveraging nMOS Negative Differential Resistance for Low Power, High Reliability Magnetic Memory Ieee Transactions On Electron Devices. 64: 4084-4090. DOI: 10.1109/Ted.2017.2742500  0.316
2017 Zhang H, Kang W, Wang L, Wang KL, Zhao W. Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory Ieee Transactions On Electron Devices. 64: 4295-4301. DOI: 10.1109/Ted.2017.2726544  0.331
2017 Lee H, Lee A, Ebrahimi F, Amiri PK, Wang KL. Array-Level Analysis of Magneto-Electric Random-Access Memory for High-Performance Embedded Applications Ieee Magnetics Letters. 8: 1-5. DOI: 10.1109/Lmag.2017.2693963  0.325
2017 Peng S, Kang W, Wang M, Cao K, Zhao X, Wang L, Zhang Y, Zhang Y, Zhou Y, Wang KL, Zhao W. Interfacial Perpendicular Magnetic Anisotropy in Sub-20 nm Tunnel Junctions for Large-Capacity Spin-Transfer Torque Magnetic Random-Access Memory Ieee Magnetics Letters. 8: 1-5. DOI: 10.1109/Lmag.2017.2693961  0.338
2017 Grezes C, Lee H, Lee A, Wang S, Ebrahimi F, Li X, Wong K, Katine JA, Ocker B, Langer J, Gupta P, Amiri PK, Wang KL. Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory Ieee Magnetics Letters. 8: 1-5. DOI: 10.1109/Lmag.2016.2630667  0.313
2017 Lee H, Lee A, Ebrahimi F, Amiri PK, Wang KL. Analog to Stochastic Bit Stream Converter Utilizing Voltage-Assisted Spin Hall Effect Ieee Electron Device Letters. 38: 1343-1346. DOI: 10.1109/Led.2017.2730844  0.33
2017 Li J, Yu G, Tang C, Liu Y, Shi Z, Liu Y, Navabi A, Aldosary M, Shao Q, Wang KL, Lake R, Shi J. Deficiency of the bulk spin Hall effect model for spin-orbit torques in magnetic-insulator/heavy-metal heterostructures Physical Review B. 95. DOI: 10.1103/Physrevb.95.241305  0.323
2017 Chavez AC, Sun W, Atulasimha J, Wang KL, Carman GP. Voltage induced artificial ferromagnetic-antiferromagnetic ordering in synthetic multiferroics Journal of Applied Physics. 122: 224102. DOI: 10.1063/1.4997612  0.325
2017 Zhang Y, Zhang Z, Wang L, Nan J, Zheng Z, Li X, Wong K, Wang Y, Klein J, Amiri PK, Zhang Y, Wang KL, Zhao W. Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale Applied Physics Letters. 111: 52407. DOI: 10.1063/1.4997422  0.341
2017 Tu S, Hu J, Yu G, Yu H, Liu C, Heimbach F, Wang X, Zhang J, Zhang Y, Hamzić A, Wang KL, Zhao W, Ansermet J. Anomalous Nernst effect in Ir22Mn78/Co20Fe60B20/MgO layers with perpendicular magnetic anisotropy Applied Physics Letters. 111: 222401. DOI: 10.1063/1.4996399  0.315
2017 Peng S, Li S, Kang W, Zhou J, Lei N, Zhang Y, Yang H, Li X, Amiri PK, Wang KL, Zhao W. Large voltage-controlled magnetic anisotropy in the SrTiO3/Fe/Cu structure Applied Physics Letters. 111: 152403. DOI: 10.1063/1.4996275  0.305
2017 Zou W, Wang W, Kou X, Lang M, Fan Y, Choi ES, Fedorov AV, Wang K, He L, Xu Y, Wang KL. Observation of Quantum Hall effect in an ultra-thin (Bi0.53Sb0.47)2Te3 film Applied Physics Letters. 110: 212401. DOI: 10.1063/1.4983684  0.355
2017 Lee H, Ebrahimi F, Amiri PK, Wang KL. Design of high-throughput and low-power true random number generator utilizing perpendicularly magnetized voltage-controlled magnetic tunnel junction Aip Advances. 7: 55934. DOI: 10.1063/1.4978320  0.343
2017 Peng S, Zhao W, Qiao J, Su L, Zhou J, Yang H, Zhang Q, Zhang Y, Grezes C, Amiri PK, Wang KL. Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures Applied Physics Letters. 110: 72403. DOI: 10.1063/1.4976517  0.343
2017 Li X, Fitzell K, Wu D, Karaba CT, Buditama A, Yu G, Wong KL, Altieri N, Grezes C, Kioussis N, Tolbert S, Zhang Z, Chang JP, Amiri PK, Wang KL. Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface Applied Physics Letters. 110: 52401. DOI: 10.1063/1.4975160  0.325
2017 Rosen IT, Fox EJ, Kou X, Pan L, Wang KL, Goldhaber-Gordon D. Chiral transport along magnetic domain walls in the quantum anomalous Hall effect Npj Quantum Materials. 2. DOI: 10.1038/S41535-017-0073-0  0.33
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2014 Chu CP, Arafin S, Nie T, Yao K, Kou X, He L, Wang CY, Chen SY, Chen LJ, Qasim SM, Bensaleh MS, Wang KL. Nanoscale growth of GaAs on patterned Si(111) substrates by molecular beam epitaxy Crystal Growth and Design. 14: 593-598. DOI: 10.1021/Cg401423D  0.36
2014 Alaskar Y, Arafin S, Wickramaratne D, Zurbuchen MA, He L, Mckay J, Lin Q, Goorsky MS, Lake RK, Wang KL. Towards van der waals epitaxial growth of GaAs on Si using a graphene buffer layer Advanced Functional Materials. DOI: 10.1002/Adfm.201400960  0.388
2013 He L, Kou X, Lang M, Choi ES, Jiang Y, Nie T, Jiang W, Fan Y, Wang Y, Xiu F, Wang KL. Evidence of the two surface states of (Bi0.53Sb0.47)2Te3 films grown by van der Waals epitaxy. Scientific Reports. 3: 3406. PMID 24297036 DOI: 10.1038/Srep03406  0.343
2013 Kou X, Lang M, Fan Y, Jiang Y, Nie T, Zhang J, Jiang W, Wang Y, Yao Y, He L, Wang KL. Interplay between different magnetisms in Cr-doped topological insulators. Acs Nano. 7: 9205-12. PMID 24079601 DOI: 10.1021/Nn4038145  0.365
2013 Kou X, He L, Lang M, Fan Y, Wong K, Jiang Y, Nie T, Jiang W, Upadhyaya P, Xing Z, Wang Y, Xiu F, Schwartz RN, Wang KL. Manipulating surface-related ferromagnetism in modulation-doped topological insulators. Nano Letters. 13: 4587-93. PMID 24020459 DOI: 10.1021/Nl4020638  0.368
2013 Tang J, Wang CY, Chang LT, Fan Y, Nie T, Chan M, Jiang W, Chen YT, Yang HJ, Tuan HY, Chen LJ, Wang KL. Electrical spin injection and detection in Mn5Ge3/Ge/Mn5Ge3 nanowire transistors. Nano Letters. 13: 4036-43. PMID 23937588 DOI: 10.1021/Nl401238P  0.569
2013 Jiang Y, Wang Y, Sagendorf J, West D, Kou X, Wei X, He L, Wang KL, Zhang S, Zhang Z. Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators. Nano Letters. 13: 2851-6. PMID 23713705 DOI: 10.1021/Nl401186D  0.345
2013 Jiang W, Upadhyaya P, Fan Y, Zhao J, Wang M, Chang LT, Lang M, Wong KL, Lewis M, Lin YT, Tang J, Cherepov S, Zhou X, Tserkovnyak Y, Schwartz RN, ... Wang KL, et al. Direct imaging of thermally driven domain wall motion in magnetic insulators. Physical Review Letters. 110: 177202. PMID 23679764 DOI: 10.1103/Physrevlett.110.177202  0.637
2013 Zeng C, Song EB, Wang M, Lee S, Torres CM, Tang J, Weiller BH, Wang KL. Vertical graphene-base hot-electron transistor. Nano Letters. 13: 2370-5. PMID 23668939 DOI: 10.1021/Nl304541S  0.795
2013 Zeng Z, Finocchio G, Zhang B, Khalili Amiri P, Katine JA, Krivorotov IN, Huai Y, Langer J, Azzerboni B, Wang KL, Jiang H. Ultralow-current-density and bias-field-free spin-transfer nano-oscillator. Scientific Reports. 3: 1426. PMID 23478390 DOI: 10.1038/Srep01426  0.345
2013 Xu K, Zeng C, Zhang Q, Yan R, Ye P, Wang K, Seabaugh AC, Xing HG, Suehle JS, Richter CA, Gundlach DJ, Nguyen NV. Direct measurement of Dirac point energy at the graphene/oxide interface. Nano Letters. 13: 131-6. PMID 23244683 DOI: 10.1021/Nl303669W  0.731
2013 Yu X, He L, Lang M, Jiang W, Xiu F, Liao Z, Wang Y, Kou X, Zhang P, Tang J, Huang G, Zou J, Wang KL. Separation of top and bottom surface conduction in Bi2Te3 thin films. Nanotechnology. 24: 015705. PMID 23221282 DOI: 10.1088/0957-4484/24/1/015705  0.553
2013 Lang M, He L, Kou X, Upadhyaya P, Fan Y, Chu H, Jiang Y, Bardarson JH, Jiang W, Choi ES, Wang Y, Yeh NC, Moore J, Wang KL. Competing weak localization and weak antilocalization in ultrathin topological insulators. Nano Letters. 13: 48-53. PMID 23198980 DOI: 10.1021/Nl303424N  0.379
2013 Balendhran S, Deng J, Ou JZ, Walia S, Scott J, Tang J, Wang KL, Field MR, Russo S, Zhuiykov S, Strano MS, Medhekar N, Sriram S, Bhaskaran M, Kalantar-zadeh K. Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide. Advanced Materials (Deerfield Beach, Fla.). 25: 109-14. PMID 23090760 DOI: 10.1002/Adma.201203346  0.571
2013 Kochergin V, Cherepov S, Schwartz RN, Flanagan K, Krivorotov IN, Kochergin EV, Wang KL. Ultrafast all-optical magnetization reversal in GdFeCo films around plasmonic nanostructures Proceedings of Spie - the International Society For Optical Engineering. 8809. DOI: 10.1117/12.2021907  0.303
2013 Dorrance R, Alzate JG, Cherepov SS, Upadhyaya P, Krivorotov IN, Katine JA, Langer J, Wang KL, Amiri PK, Marković D. Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM Ieee Electron Device Letters. 34: 753-755. DOI: 10.1109/Led.2013.2255096  0.347
2013 Xu G, Zhang Y, Duan X, Balandin AA, Wang KL. Variability effects in graphene: Challenges and opportunities for device engineering and applications Proceedings of the Ieee. 101: 1670-1688. DOI: 10.1109/Jproc.2013.2247971  0.324
2013 Zhang JM, Ming W, Huang Z, Liu GB, Kou X, Fan Y, Wang KL, Yao Y. Stability, electronic, and magnetic properties of the magnetically doped topological insulators Bi 2 Se 3, Bi 2 Te 3, and Sb 2 Te 3 Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.235131  0.339
2013 Upadhyaya P, Dusad R, Hoffman S, Tserkovnyak Y, Alzate JG, Amiri PK, Wang KL. Electric field induced domain-wall dynamics: Depinning and chirality switching Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.224422  0.303
2013 Jiang W, Fan Y, Upadhyaya P, Lang M, Wang M, Chang LT, Wong KL, Tang J, Lewis M, Zhao J, He L, Kou X, Zeng C, Zhou XZ, Schwartz RN, ... Wang KL, et al. Mapping the domain wall pinning profile by stochastic imaging reconstruction Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.014427  0.714
2013 Fischer IA, Gebauer J, Rolseth E, Winkel P, Chang LT, Wang KL, Sürgers C, Schulze J. Ferromagnetic Mn5Ge3C0.8 contacts on Ge: Work function and specific contact resistivity Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/12/125002  0.335
2013 Chang LT, Han W, Zhou Y, Tang J, Fischer IA, Oehme M, Schulze J, Kawakami RK, Wang KL. Comparison of spin lifetimes in n-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/1/015018  0.507
2013 Wang KL, Alzate JG, Khalili Amiri P. Low-power non-volatile spintronic memory: STT-RAM and beyond Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/7/074003  0.345
2013 Poljak M, Suligoj T, Wang KL. Influence of substrate type and quality on carrier mobility in graphene nanoribbons Journal of Applied Physics. 114. DOI: 10.1063/1.4817077  0.342
2013 Lee S, Lee Y, Song EB, Wang KL, Hiramoto T. Gate-tunable selective operation of single electron/hole transistor modes in a silicon single quantum dot at room temperature Applied Physics Letters. 102. DOI: 10.1063/1.4793564  0.707
2013 Khalili Amiri P, Upadhyaya P, Alzate JG, Wang KL. Electric-field-induced thermally assisted switching of monodomain magnetic bits Journal of Applied Physics. 113. DOI: 10.1063/1.4773342  0.317
2013 Poljak M, Wang M, Song EB, Suligoj T, Wang KL. Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons Solid-State Electronics. 84: 103-111. DOI: 10.1016/J.Sse.2013.02.014  0.761
2013 He L, Kou X, Wang KL. Review of 3D topological insulator thin-film growth by molecular beam epitaxy and potential applications Physica Status Solidi - Rapid Research Letters. 7: 50-63. DOI: 10.1002/Pssr.201307003  0.352
2013 Balendhran S, Deng J, Ou JZ, Walia S, Scott J, Tang J, Wang KL, Field MR, Russo S, Zhuiykov S, Strano MS, Medhekar N, Sriram S, Bhaskaran M, Kalantar-zadeh K. Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide (Adv. Mater. 1/2013) Advanced Materials. 25: 108-108. DOI: 10.1002/Adma.201370007  0.53
2012 Tang J, Wang CY, Jiang W, Chang LT, Fan Y, Chan M, Wu C, Hung MH, Liu PH, Yang HJ, Tuan HY, Chen LJ, Wang KL. Electrical probing of magnetic phase transition and domain wall motion in single-crystalline Mn₅Ge₃ nanowire. Nano Letters. 12: 6372-9. PMID 23167773 DOI: 10.1021/Nl303645K  0.556
2012 Bao L, He L, Meyer N, Kou X, Zhang P, Chen ZG, Fedorov AV, Zou J, Riedemann TM, Lograsso TA, Wang KL, Tuttle G, Xiu F. Weak anti-localization and quantum oscillations of surface states in topological insulator Bi₂Se₂Te. Scientific Reports. 2: 726. PMID 23061009 DOI: 10.1038/Srep00726  0.315
2012 Zhu J, Katine JA, Rowlands GE, Chen YJ, Duan Z, Alzate JG, Upadhyaya P, Langer J, Amiri PK, Wang KL, Krivorotov IN. Voltage-induced ferromagnetic resonance in magnetic tunnel junctions. Physical Review Letters. 108: 197203. PMID 23003081 DOI: 10.1103/Physrevlett.108.197203  0.324
2012 Xiu F, Meyer N, Kou X, He L, Lang M, Wang Y, Yu X, Fedorov AV, Zou J, Wang KL. Quantum capacitance in topological insulators. Scientific Reports. 2: 669. PMID 22993694 DOI: 10.1038/Srep00669  0.355
2012 Kim SM, Song EB, Lee S, Zhu J, Seo DH, Mecklenburg M, Seo S, Wang KL. Transparent and flexible graphene charge-trap memory. Acs Nano. 6: 7879-84. PMID 22889250 DOI: 10.1021/Nn302193Q  0.722
2012 Lee S, In J, Yoo Y, Jo Y, Park YC, Kim HJ, Koo HC, Kim J, Kim B, Wang KL. Single crystalline β-Ag2Te nanowire as a new topological insulator. Nano Letters. 12: 4194-9. PMID 22783921 DOI: 10.1021/Nl301763R  0.315
2012 Kim RS, Zhu J, Park JH, Li L, Yu Z, Shen H, Xue M, Wang KL, Park G, Anderson TJ, Pei Q. E-beam deposited Ag-nanoparticles plasmonic organic solar cell and its absorption enhancement analysis using FDTD-based cylindrical nano-particle optical model. Optics Express. 20: 12649-57. PMID 22714293 DOI: 10.1364/Oe.20.012649  0.424
2012 Zeng Z, Amiri PK, Krivorotov IN, Zhao H, Finocchio G, Wang JP, Katine JA, Huai Y, Langer J, Galatsis K, Wang KL, Jiang H. High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy. Acs Nano. 6: 6115-21. PMID 22663148 DOI: 10.1021/Nn301222V  0.342
2012 Tang J, Wang CY, Hung MH, Jiang X, Chang LT, He L, Liu PH, Yang HJ, Tuan HY, Chen LJ, Wang KL. Ferromagnetic germanide in Ge nanowire transistors for spintronics application. Acs Nano. 6: 5710-7. PMID 22658951 DOI: 10.1021/Nn301956M  0.586
2012 Hung MH, Wang CY, Tang J, Lin CC, Hou TC, Jiang X, Wang KL, Chen LJ. Free-standing and single-crystalline Fe(1-x)Mn(x)Si nanowires with room-temperature ferromagnetism and excellent magnetic response. Acs Nano. 6: 4884-91. PMID 22584099 DOI: 10.1021/Nn300344K  0.538
2012 Zhu J, Xue M, Hoekstra R, Xiu F, Zeng B, Wang KL. Light concentration and redistribution in polymer solar cells by plasmonic nanoparticles. Nanoscale. 4: 1978-81. PMID 22354350 DOI: 10.1039/C2Nr11920J  0.424
2012 He L, Xiu F, Yu X, Teague M, Jiang W, Fan Y, Kou X, Lang M, Wang Y, Huang G, Yeh NC, Wang KL. Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film. Nano Letters. 12: 1486-90. PMID 22316380 DOI: 10.1021/Nl204234J  0.329
2012 Wang Y, Xiu F, Cheng L, He L, Lang M, Tang J, Kou X, Yu X, Jiang X, Chen Z, Zou J, Wang KL. Gate-controlled surface conduction in Na-doped Bi2Te3 topological insulator nanoplates. Nano Letters. 12: 1170-5. PMID 22313251 DOI: 10.1021/Nl202920P  0.572
2012 Lang M, He L, Xiu F, Yu X, Tang J, Wang Y, Kou X, Jiang W, Fedorov AV, Wang KL. Revelation of topological surface states in Bi2Se3 thin films by in situ Al passivation. Acs Nano. 6: 295-302. PMID 22147687 DOI: 10.1021/Nn204239D  0.523
2012 Lee S, Kim SM, Song EB, Wang KL, Seo DH, Seo S. Fabrication and electrical characteristics of graphene-based charge-trap memory devices Journal of the Korean Physical Society. 61: 108-112. DOI: 10.3938/Jkps.61.108  0.733
2012 Xue M, Wang KL. Molecular Rotors as Switches Sensors. 12: 11612-11637. DOI: 10.3390/S120911612  0.51
2012 Hobbs RG, Schmidt M, Bolger CT, Georgiev YM, Fleming P, Morris MA, Petkov N, Holmes JD, Xiu F, Wang KL, Djara V, Yu R, Colinge JP. Resist-substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4724302  0.327
2012 Poljak M, Song EB, Wang M, Suligoj T, Wang KL. Influence of edge defects, vacancies, and potential fluctuations on transport properties of extremely scaled graphene nanoribbons Ieee Transactions On Electron Devices. 59: 3231-3238. DOI: 10.1109/Ted.2012.2217969  0.767
2012 Poljak M, Song EB, Wang M, Suligoj T, Wang KL. Effects of disorder on transport properties of extremely scaled graphene nanoribbons European Solid-State Device Research Conference. 298-301. DOI: 10.1109/ESSDERC.2012.6343392  0.75
2012 Zhao H, Glass B, Amiri PK, Lyle A, Zhang Y, Chen YJ, Rowlands G, Upadhyaya P, Zeng Z, Katine JA, Langer J, Galatsis K, Jiang H, Wang KL, Krivorotov IN, et al. Sub-200ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/2/025001  0.343
2012 Kong BD, Zeng C, Gaskill DK, Wang KL, Kim KW. Two dimensional crystal tunneling devices for THz operation Applied Physics Letters. 101. DOI: 10.1063/1.4773514  0.589
2012 Lee S, Song EB, Min Kim S, Lee Y, Seo DH, Seo S, Wang KL. Reduced electron back-injection in Al2O3/AlO x/Al2O3/graphene charge-trap memory devices Applied Physics Letters. 101. DOI: 10.1063/1.4770381  0.72
2012 Fan Y, Ovchinnikov IV, Jiang W, Schwartz RN, Wang KL. Fluctuations in nanoscale magnetoelectronics devices Journal of Applied Physics. 112. DOI: 10.1063/1.4759251  0.337
2012 Kou XF, Jiang WJ, Lang MR, Xiu FX, He L, Wang Y, Yu XX, Fedorov AV, Zhang P, Wang KL. Magnetically doped semiconducting topological insulators Journal of Applied Physics. 112. DOI: 10.1063/1.4754452  0.366
2012 Zhu G, Wong KL, Zhao J, Amiri PK, Wang KL, Hockel J, Carman GP, Zhu J, Krivorotov I. The influence of in-plane ferroelectric crystal orientation on electrical modulation of magnetic properties in Co 60Fe 20B 20/SiO 2/(011) xPb(Mg 1/3Nb 2/3)O 3-(1 - X)PbTiO 3 heterostructures Journal of Applied Physics. 112. DOI: 10.1063/1.4745903  0.301
2012 Hoffman S, Tserkovnyak Y, Khalili Amiri P, Wang KL. Magnetic bit stability: Competition between domain-wall and monodomain switching Applied Physics Letters. 100. DOI: 10.1063/1.4716023  0.308
2012 Zhu J, Zhu X, Hoekstra R, Li L, Xiu F, Xue M, Zeng B, Wang KL. Metallic nanomesh electrodes with controllable optical properties for organic solar cells Applied Physics Letters. 100. DOI: 10.1063/1.3701582  0.454
2012 Lee S, Song EB, Kim S, Seo DH, Seo S, Won Kang T, Wang KL. Impact of gate work-function on memory characteristics in Al 2O 3/HfO x/Al 2O 3/graphene charge-trap memory devices Applied Physics Letters. 100. DOI: 10.1063/1.3675633  0.723
2012 Rahman MT, Lyle A, Khalili Amiri P, Harms J, Glass B, Zhao H, Rowlands G, Katine JA, Langer J, Krivorotov IN, Wang KL, Wang JP. Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer Journal of Applied Physics. 111. DOI: 10.1063/1.3673834  0.33
2011 Wang Y, Liao Z, Xu H, Xiu F, Kou X, Wang Y, Wang KL, Drennan J, Zou J. Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions. Nanoscale Research Letters. 6: 624. PMID 22151995 DOI: 10.1186/1556-276X-6-624  0.341
2011 Xiu F, Wang Y, Zou J, Wang KL. Electric-field controlled ferromagnetism in MnGe magnetic quantum dots. Nano Reviews. 2. PMID 22110869 DOI: 10.3402/Nano.V2I0.5896  0.403
2011 Tsai CI, Wang CY, Tang J, Hung MH, Wang KL, Chen LJ. Electrical properties and magnetic response of cobalt germanosilicide nanowires. Acs Nano. 5: 9552-8. PMID 22067017 DOI: 10.1021/Nn202695A  0.535
2011 Chen P, Fu Y, Aminirad R, Wang C, Zhang J, Wang K, Galatsis K, Zhou C. Fully printed separated carbon nanotube thin film transistor circuits and its application in organic light emitting diode control. Nano Letters. 11: 5301-8. PMID 22050730 DOI: 10.1021/Nl202765B  0.327
2011 Wang M, Song EB, Lee S, Tang J, Lang M, Zeng C, Xu G, Zhou Y, Wang KL. Quantum dot behavior in bilayer graphene nanoribbons. Acs Nano. 5: 8769-73. PMID 22017308 DOI: 10.1021/Nn2027566  0.798
2011 Hong AJ, Song EB, Yu HS, Allen MJ, Kim J, Fowler JD, Wassei JK, Park Y, Wang Y, Zou J, Kaner RB, Weiller BH, Wang KL. Graphene flash memory. Acs Nano. 5: 7812-7. PMID 21854056 DOI: 10.1021/Nn201809K  0.803
2011 Rasool HI, Song EB, Mecklenburg M, Regan BC, Wang KL, Weiller BH, Gimzewski JK. Atomic-scale characterization of graphene grown on copper (100) single crystals. Journal of the American Chemical Society. 133: 12536-43. PMID 21732685 DOI: 10.1021/Ja200245P  0.717
2011 Wang Y, Xiu F, Wang Y, Zou J, Beyermann WP, Zhou Y, Wang KL. Coherent magnetic semiconductor nanodot arrays. Nanoscale Research Letters. 6: 134. PMID 21711627 DOI: 10.1186/1556-276X-6-134  0.368
2011 Tang J, Wang CY, Xiu F, Lang M, Chu LW, Tsai CJ, Chueh YL, Chen LJ, Wang KL. Oxide-confined formation of germanium nanowire heterostructures for high-performance transistors. Acs Nano. 5: 6008-15. PMID 21699197 DOI: 10.1021/Nn2017777  0.587
2011 Kim J, Hong AJ, Kim SM, Shin KS, Song EB, Hwang Y, Xiu F, Galatsis K, Chui CO, Candler RN, Choi S, Moon JT, Wang KL. A stacked memory device on logic 3D technology for ultra-high-density data storage. Nanotechnology. 22: 254006. PMID 21572190 DOI: 10.1088/0957-4484/22/25/254006  0.77
2011 Wang KL, Ovchinnikov I, Xiu F, Khitun A, Bao M. From nanoelectronics to nano-spintronics. Journal of Nanoscience and Nanotechnology. 11: 306-13. PMID 21446445 DOI: 10.1166/Jnn.2011.3155  0.386
2011 Xu G, Torres CM, Tang J, Bai J, Song EB, Huang Y, Duan X, Zhang Y, Wang KL. Edge effect on resistance scaling rules in graphene nanostructures. Nano Letters. 11: 1082-6. PMID 21322591 DOI: 10.1021/Nl103966T  0.774
2011 Xiu F, He L, Wang Y, Cheng L, Chang LT, Lang M, Huang G, Kou X, Zhou Y, Jiang X, Chen Z, Zou J, Shailos A, Wang KL. Manipulating surface states in topological insulator nanoribbons. Nature Nanotechnology. 6: 216-21. PMID 21317891 DOI: 10.1038/Nnano.2011.19  0.329
2011 Liao Y, Zhang C, Zhang Y, Strong V, Tang J, Li XG, Kalantar-Zadeh K, Hoek EMV, Wang KL, Kaner RB. Carbon nanotube/polyaniline composite nanofibers: Facile synthesis and chemosensors Nano Letters. 11: 954-959. PMID 21288040 DOI: 10.1021/Nl103322B  0.506
2011 Dong A, Chen J, Oh SJ, Koh WK, Xiu F, Ye X, Ko DK, Wang KL, Kagan CR, Murray CB. Multiscale periodic assembly of striped nanocrystal superlattice films on a liquid surface. Nano Letters. 11: 841-6. PMID 21226509 DOI: 10.1021/Nl104208X  0.316
2011 Rasool HI, Song EB, Allen MJ, Wassei JK, Kaner RB, Wang KL, Weiller BH, Gimzewski JK. Continuity of graphene on polycrystalline copper. Nano Letters. 11: 251-6. PMID 21117698 DOI: 10.1021/Nl1036403  0.712
2011 Tang J, Wang CY, Xiu F, Zhou Y, Chen LJ, Wang KL. Formation and device application of Ge nanowire heterostructures via rapid thermal annealing Advances in Materials Science and Engineering. 2011. DOI: 10.1155/2011/316513  0.592
2011 Chu L, Hung S, Wang CY, Chen Y, Tang J, Wang KL, Chen L. Field Emission and Magnetic Properties of Free-Standing Gd Silicide Nanowires Prepared by Reacting Ultrahigh Vacuum Deposited Gd Films with Well-Aligned Si Nanowires Journal of the Electrochemical Society. 158: K64. DOI: 10.1149/1.3529943  0.561
2011 Hong R, Zhou Y, Wang KL, Wu Z. 4H-SiC Nano-Pillar Avalanche Photodiode With Illumination-Dependent Characteristics Ieee Photonics Technology Letters. 23: 816-818. DOI: 10.1109/Lpt.2011.2140391  0.309
2011 Khalili Amiri P, Zeng ZM, Upadhyaya P, Rowlands G, Zhao H, Krivorotov IN, Wang JP, Jiang HW, Katine JA, Langer J, Galatsis K, Wang KL. Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM Ieee Electron Device Letters. 32: 57-59. DOI: 10.1109/Led.2010.2082487  0.336
2011 Zhou Y, Han W, Chang LT, Xiu F, Wang M, Oehme M, Fischer IA, Schulze J, Kawakami RK, Wang KL. Electrical spin injection and transport in germanium Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.125323  0.536
2011 Hong AJ, Kim J, Kim K, Wang Y, Xiu F, Jeon J, Park J, Rauda I, Chen LM, Yang Y, Tolbert S, Zou J, Wang KL. Cr metal thin film memory Journal of Applied Physics. 110. DOI: 10.1063/1.3626901  0.722
2011 Song EB, Lian B, Min Kim S, Lee S, Chung TK, Wang M, Zeng C, Xu G, Wong K, Zhou Y, Rasool HI, Seo DH, Chung HJ, Heo J, Seo S, ... Wang KL, et al. Robust bi-stable memory operation in single-layer graphene ferroelectric memory Applied Physics Letters. 99. DOI: 10.1063/1.3619816  0.807
2011 Zeng ZM, Upadhyaya P, Khalili Amiri P, Cheung KH, Katine JA, Langer J, Wang KL, Jiang HW. Enhancement of microwave emission in magnetic tunnel junction oscillators through in-plane field orientation Applied Physics Letters. 99. DOI: 10.1063/1.3613965  0.312
2011 Kim SM, Song EB, Lee S, Seo S, Seo DH, Hwang Y, Candler R, Wang KL. Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current Applied Physics Letters. 99. DOI: 10.1063/1.3610571  0.716
2011 Wu T, Bur A, Wong K, Zhao P, Lynch CS, Amiri PK, Wang KL, Carman GP. Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices Applied Physics Letters. 98. DOI: 10.1063/1.3605571  0.322
2011 Xue M, Li L, Tremolet De Villers BJ, Shen H, Zhu J, Yu Z, Stieg AZ, Pei Q, Schwartz BJ, Wang KL. Charge-carrier dynamics in hybrid plasmonic organic solar cells with Ag nanoparticles Applied Physics Letters. 98. DOI: 10.1063/1.3601742  0.46
2011 Xu G, Torres CM, Bai J, Tang J, Yu T, Huang Y, Duan X, Zhang Y, Wang KL. Linewidth roughness in nanowire-mask-based graphene nanoribbons Applied Physics Letters. 98. DOI: 10.1063/1.3599596  0.613
2011 Bur A, Wu T, Hockel J, Hsu CJ, Kim HKD, Chung TK, Wong K, Wang KL, Carman GP. Strain-induced magnetization change in patterned ferromagnetic nickel nanostructures Journal of Applied Physics. 109. DOI: 10.1063/1.3592344  0.303
2011 He L, Xiu F, Wang Y, Fedorov AV, Huang G, Kou X, Lang M, Beyermann WP, Zou J, Wang KL. Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111) Journal of Applied Physics. 109. DOI: 10.1063/1.3585673  0.351
2011 Zhu J, Xue M, Shen H, Wu Z, Kim S, Ho J, Hassani-Afshar A, Zeng B, Wang KL. Plasmonic effects for light concentration in organic photovoltaic thin films induced by hexagonal periodic metallic nanospheres Applied Physics Letters. 98: 151110. DOI: 10.1063/1.3577611  0.475
2011 Khalili Amiri P, Zeng ZM, Langer J, Zhao H, Rowlands G, Chen YJ, Krivorotov IN, Wang JP, Jiang HW, Katine JA, Huai Y, Galatsis K, Wang KL. Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions Applied Physics Letters. 98. DOI: 10.1063/1.3567780  0.353
2011 Vulović BM, Ovchinnikov I, Wang KL. On the upper limit for optical spin pumping in III-V semiconductor quantum dots Journal of Applied Physics. 109: 63916. DOI: 10.1063/1.3567303  0.312
2011 Wu T, Bur A, Wong K, Leon Hockel J, Hsu CJ, Kim HKD, Wang KL, Carman GP. Electric-poling-induced magnetic anisotropy and electric-field-induced magnetization reorientation in magnetoelectric Ni/(011) [Pb(Mg 1/3Nb2/3)O3](1-x)-[PbTiO 3]x heterostructure Journal of Applied Physics. 109. DOI: 10.1063/1.3563040  0.31
2011 Zhao H, Lyle A, Zhang Y, Amiri PK, Rowlands G, Zeng Z, Katine J, Jiang H, Galatsis K, Wang KL, Krivorotov IN, Wang JP. Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory Journal of Applied Physics. 109. DOI: 10.1063/1.3556784  0.32
2011 Zeng ZM, Khalili Amiri P, Rowlands G, Zhao H, Krivorotov IN, Wang JP, Katine JA, Langer J, Galatsis K, Wang KL, Jiang HW. Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells Applied Physics Letters. 98. DOI: 10.1063/1.3556615  0.305
2011 Upadhyaya P, Amiri PK, Kovalev AA, Tserkovnyak Y, Rowlands G, Zeng Z, Krivorotov I, Jiang H, Wang KL. Thermal stability characterization of magnetic tunnel junctions using hard-axis magnetoresistance measurements Journal of Applied Physics. 109. DOI: 10.1063/1.3548830  0.315
2011 Wu T, Bur A, Zhao P, Mohanchandra KP, Wong K, Wang KL, Lynch CS, Carman GP. Giant electric-field-induced reversible and permanent magnetization reorientation on magnetoelectric Ni/(011) [Pb (Mg1/3 Nb 2/3) O3](1-x) - [PbTiO3] x heterostructure Applied Physics Letters. 98. DOI: 10.1063/1.3534788  0.309
2011 Lee S, Song EB, Wang KL, Yoon CS, Yoon IT, Shon Y, Kang TW. Thermodynamic behavior of excitonic emission properties in manganese- and zinc-codoped indium phosphide diluted magnetic semiconductor layers Journal of Physical Chemistry C. 115: 23564-23567. DOI: 10.1021/Jp207879B  0.688
2011 Cheng Y, Ho J, Tsai S, Ye Z, Lee W, Hwang D, Chang S, Chang C, Wang KL. Efficiency improved by acid texturization for multi-crystalline silicon solar cells Solar Energy. 85: 87-94. DOI: 10.1016/J.Solener.2010.10.020  0.311
2010 Tang J, Wang CY, Xiu F, Hong AJ, Chen S, Wang M, Zeng C, Yang HJ, Tuan HY, Tsai CJ, Chen LJ, Wang KL. Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors. Nanotechnology. 21: 505704. PMID 21098938 DOI: 10.1088/0957-4484/21/50/505704  0.784
2010 Kabehie S, Xue M, Stieg AZ, Liong M, Wang KL, Zink JI. Heteroleptic copper switches. Journal of the American Chemical Society. 132: 15987-96. PMID 20964417 DOI: 10.1021/Ja103937V  0.424
2010 Xu G, Torres CM, Song EB, Tang J, Bai J, Duan X, Zhang Y, Wang KL. Enhanced conductance fluctuation by quantum confinement effect in graphene nanoribbons. Nano Letters. 10: 4590-4. PMID 20939609 DOI: 10.1021/Nl1025979  0.773
2010 Liao L, Lin YC, Bao M, Cheng R, Bai J, Liu Y, Qu Y, Wang KL, Huang Y, Duan X. High-speed graphene transistors with a self-aligned nanowire gate. Nature. 467: 305-8. PMID 20811365 DOI: 10.1038/Nature09405  0.37
2010 Xiu F, Ovchinnikov IV, Upadhyaya P, Wong K, Kou X, Zhou Y, Wang KL. Voltage-controlled ferromagnetic order in MnGe quantum dots. Nanotechnology. 21: 375606. PMID 20724774 DOI: 10.1088/0957-4484/21/37/375606  0.349
2010 Bai J, Cheng R, Xiu F, Liao L, Wang M, Shailos A, Wang KL, Huang Y, Duan X. Very large magnetoresistance in graphene nanoribbons. Nature Nanotechnology. 5: 655-9. PMID 20693988 DOI: 10.1038/Nnano.2010.154  0.636
2010 Xu G, Torres CM, Zhang Y, Liu F, Song EB, Wang M, Zhou Y, Zeng C, Wang KL. Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene. Nano Letters. 10: 3312-7. PMID 20684526 DOI: 10.1021/Nl100985Z  0.787
2010 Xiu F, Wang Y, Kou X, Upadhyaya P, Zhou Y, Zou J, Wang KL. Synthesis of high-Curie-temperature Fe0.02Ge0.98 quantum dots. Journal of the American Chemical Society. 132: 11425-7. PMID 20672800 DOI: 10.1021/Ja105036J  0.342
2010 Xiu F, Wang Y, Kim J, Upadhyaya P, Zhou Y, Kou X, Han W, Kawakami RK, Zou J, Wang KL. Room-temperature electric-field controlled ferromagnetism in Mn0.05Ge0.95 quantum dots. Acs Nano. 4: 4948-54. PMID 20666361 DOI: 10.1021/Nn101516T  0.397
2010 Kalantar-Zadeh K, Tang J, Wang M, Wang KL, Shailos A, Galatsis K, Kojima R, Strong V, Lech A, Wlodarski W, Kaner RB. Synthesis of nanometre-thick MoO3 sheets Nanoscale. 2: 429-433. PMID 20644828 DOI: 10.1039/B9Nr00320G  0.641
2010 He J, Wu Y, Wang KL. Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer. Nanotechnology. 21: 255705. PMID 20516585 DOI: 10.1088/0957-4484/21/25/255705  0.322
2010 Xiu F, Wang Y, Wong K, Zhou Y, Kou X, Zou J, Wang KL. MnGe magnetic nanocolumns and nanowells. Nanotechnology. 21: 255602. PMID 20508314 DOI: 10.1088/0957-4484/21/25/255602  0.361
2010 Xiu F, Wang Y, Kim J, Hong A, Tang J, Jacob AP, Zou J, Wang KL. Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots. Nature Materials. 9: 337-44. PMID 20208524 DOI: 10.1038/Nmat2716  0.789
2010 Liu W, Xiu F, Sun K, Xie YH, Wang KL, Wang Y, Zou J, Yang Z, Liu J. Na-doped p-type ZnO microwires. Journal of the American Chemical Society. 132: 2498-9. PMID 20141133 DOI: 10.1021/Ja908521S  0.321
2010 Hong AJ, Liu CC, Wang Y, Kim J, Xiu F, Ji S, Zou J, Nealey PF, Wang KL. Metal nanodot memory by self-assembled block copolymer lift-off. Nano Letters. 10: 224-9. PMID 19957954 DOI: 10.1021/Nl903340A  0.72
2010 Wu Y, Bao M, Khitun A, Kim J, Hong A, Wang KL. A Three-Terminal Spin-Wave Device for Logic Applications Journal of Nanoelectronics and Optoelectronics. 4: 394-397. DOI: 10.1166/Jno.2009.1045  0.714
2010 Ho JJ, Cheng YT, Lee WJ, Tsai SY, Lu YA, Liou JJ, Chang SH, Wang KL. Investigation of low-cost surface processing techniques for large-size multicrystalline silicon solar cells International Journal of Photoenergy. 2010. DOI: 10.1155/2010/268035  0.318
2010 Lei B, Ryu K, De-Arco LG, Han S, Badmaev A, Farmer D, Kim K, Gordon R, Wang KL, Zhou C. Raman characterization and polarity tuning of aligned single-walled carbon nanotubes on quartz Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.02Bc02  0.324
2010 Xue M, Kabehie S, Stieg AZ, Tkatchouk E, Benitez D, Goddard WA, Zink JI, Wang KL. A molecular-rotor device for nonvolatile high-density memory applications Ieee Electron Device Letters. 31: 1047-1049. DOI: 10.1109/Led.2010.2052018  0.497
2010 Xu G, Bai J, Torres CM, Song EB, Tang J, Zhou Y, Duan X, Zhang Y, Wang KL. Low-noise submicron channel graphene nanoribbons Applied Physics Letters. 97. DOI: 10.1063/1.3481351  0.769
2010 Zeng C, Wang M, Zhou Y, Lang M, Lian B, Song E, Xu G, Tang J, Torres C, Wang KL. Tunneling spectroscopy of metal-oxide-graphene structure Applied Physics Letters. 97: 032104. DOI: 10.1063/1.3460283  0.81
2010 Zhou Y, Han W, Wang Y, Xiu F, Zou J, Kawakami RK, Wang KL. Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films Applied Physics Letters. 96. DOI: 10.1063/1.3357423  0.338
2010 Song EB, Lian B, Xu G, Yuan B, Zeng C, Chen A, Wang M, Kim S, Lang M, Zhou Y, Wang KL. Visibility and Raman spectroscopy of mono and bilayer graphene on crystalline silicon Applied Physics Letters. 96. DOI: 10.1063/1.3323105  0.805
2010 Zou J, Wang Y, Xiu F, Wang KL, Jacob AP. Tadpole shaped Ge0.96 Mn0.04 magnetic semiconductors grown on Si Applied Physics Letters. 96. DOI: 10.1063/1.3297880  0.381
2010 Kabehie S, Stieg AZ, Xue M, Liong M, Wang KL, Zink JI. Surface immobilized heteroleptic copper compounds as state variables that show negative differential resistance Journal of Physical Chemistry Letters. 1: 589-593. DOI: 10.1021/Jz900324F  0.443
2010 Wang KL, Xiu F. Quest of electric field controlled spintronics in MnGe Thin Solid Films. 518: S104-S112. DOI: 10.1016/J.Tsf.2009.10.066  0.391
2010 Khitun A, Bao M, Wang KL. Magnetic cellular nonlinear network with spin wave bus for image processing Superlattices and Microstructures. 47: 464-483. DOI: 10.1016/J.Spmi.2009.11.004  0.309
2010 Zhou JC, Wang X, Xue M, Xu Z, Hamasaki T, Yang Y, Wang K, Dunn B. Characterization of gold nanoparticle binding to microtubule filaments Materials Science and Engineering: C. 30: 20-26. DOI: 10.1016/J.Msec.2009.08.003  0.432
2010 Wang Y, Xiu F, Xu H, Li D, Kou X, Wang KL, Jacob AP, Zou J. Effect of Mn concentration and growth temperature on nanostructures and magnetic properties of Ge1-xMnx grown on Si Journal of Crystal Growth. 312: 3034-3039. DOI: 10.1016/J.Jcrysgro.2010.07.008  0.346
2009 Allen MJ, Wang M, Jannuzzi SA, Yang Y, Wang KL, Kaner RB. Chemically induced folding of single and bilayer graphene. Chemical Communications (Cambridge, England). 6285-7. PMID 19826696 DOI: 10.1039/B911972H  0.578
2009 Wang Y, Zou J, Zhao ZM, Hao Z, Wang KL. High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer. Nanotechnology. 20: 305301. PMID 19581699 DOI: 10.1088/0957-4484/20/30/305301  0.354
2009 Zhao Z, Yadavalli K, Hao Z, Wang KL. Direct integration of III-V compound semiconductor nanostructures on silicon by selective epitaxy. Nanotechnology. 20: 035304. PMID 19417293 DOI: 10.1088/0957-4484/20/3/035304  0.375
2009 van der Meulen MI, Petkov N, Morris MA, Kazakova O, Han X, Wang KL, Jacob AP, Holmes JD. Single crystalline Ge(1-x)Mn(x) nanowires as building blocks for nanoelectronics. Nano Letters. 9: 50-6. PMID 19032036 DOI: 10.1021/Nl802114X  0.395
2009 Chung TK, Wong K, Keller S, Wang KL, Carman GP. Electrical control of magnetic remanent states in a magnetoelectric layered nanostructure Journal of Applied Physics. 106. DOI: 10.1063/1.3261727  0.318
2009 Xue M, Kabehie S, Stieg AZ, Tkatchouk E, Benitez D, Stephenson RM, Goddard WA, Zink JI, Wang KL. Room temperature negative differential resistance of a monolayer molecular rotor device Applied Physics Letters. 95. DOI: 10.1063/1.3222861  0.512
2009 Zhou Y, Ogawa M, Bao M, Han W, Kawakami RK, Wang KL. Engineering of tunnel junctions for prospective spin injection in germanium Applied Physics Letters. 94: 242104. DOI: 10.1063/1.3157128  0.367
2009 Yang XL, Chen ZT, Wang CD, Zhang Y, Pei XD, Yang ZJ, Zhang GY, Ding ZB, Wang K, Yao SD. Structural, optical, and magnetic properties of Cu-implanted GaN films Journal of Applied Physics. 105. DOI: 10.1063/1.3079519  0.316
2009 Han W, Zhou Y, Wang Y, Li Y, Wong JJI, Pi K, Swartz AG, McCreary KM, Xiu F, Wang KL, Zou J, Kawakami RK. Growth of single-crystalline, atomically smooth MgO films on Ge(0 0 1) by molecular beam epitaxy Journal of Crystal Growth. 312: 44-47. DOI: 10.1016/J.Jcrysgro.2009.09.052  0.306
2009 Ogawa M, Han X, Zhao Z, Wang Y, Wang KL, Zou J. Mn distribution behaviors and magnetic properties of GeMn films grown on Si (001) substrates Journal of Crystal Growth. 311: 2147-2150. DOI: 10.1016/J.Jcrysgro.2008.12.013  0.354
2008 He J, Yadavalli K, Zhao Z, Li N, Hao Z, Wang KL, Jacob AP. InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy. Nanotechnology. 19: 455607. PMID 21832784 DOI: 10.1088/0957-4484/19/45/455607  0.388
2008 Liu C, Hughes TL, Qi XL, Wang K, Zhang SC. Quantum spin Hall effect in inverted type-II semiconductors. Physical Review Letters. 100: 236601. PMID 18643529 DOI: 10.1103/Physrevlett.100.236601  0.318
2008 Yue YM, Wang KL, Zhang W, Chen HS, Wang M. [Relationships between soil and environment in peak-cluster depression areas of Karst region based on canonical correspondence analysis]. Huan Jing Ke Xue= Huanjing Kexue / [Bian Ji, Zhongguo Ke Xue Yuan Huan Jing Ke Xue Wei Yuan Hui "Huan Jing Ke Xue" Bian Ji Wei Yuan Hui.]. 29: 1400-5. PMID 18624214  0.412
2008 Khitun A, Bao M, Wu Y, Kim J, Hong A, Jacob AP, Galatsis K, Wang KL. Logic Devices with Spin Wave Buses - an Approach to Scalable Magneto-Electric Circuitry Mrs Proceedings. 1067. DOI: 10.1557/Proc-1067-B01-04  0.716
2008 Khitun A, Bao M, Wang KL. Spin Wave Magnetic NanoFabric: A New Approach to Spin-Based Logic Circuitry Ieee Transactions On Magnetics. 44: 2141-2152. DOI: 10.1109/Tmag.2008.2000812  0.32
2008 Zhou Y, Ogawa M, Han X, Wang KL. Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide Applied Physics Letters. 93: 202105. DOI: 10.1063/1.3028343  0.316
2008 Bao M, Khitun A, Wu Y, Lee J, Wang KL, Jacob AP. Coplanar waveguide radio frequency ferromagnetic parametric amplifier Applied Physics Letters. 93: 072509. DOI: 10.1063/1.2975174  0.309
2008 Hong AJ, Ogawa M, Wang KL, Wang Y, Zou J, Xu Z, Yang Y. Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications Applied Physics Letters. 93. DOI: 10.1063/1.2957476  0.738
2008 Xu G, Liu F, Han S, Ryu K, Badmaev A, Lei B, Zhou C, Wang KL. Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2940590  0.311
2008 Ovchinnikov IV, Wang KL. Variability of electronics and spintronics nanoscale devices Applied Physics Letters. 92: 93503. DOI: 10.1063/1.2888744  0.337
2008 Wang Y, Zou J, Zhao Z, Han X, Zhou X, Wang KL. Mn behavior in Ge0.96Mn0.04 magnetic thin films grown on Si Journal of Applied Physics. 103: 66104. DOI: 10.1063/1.2875110  0.33
2008 Zhao Z, Hao Z, Yadavalli K, Wang KL, Jacob AP. Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer Applied Physics Letters. 92: 83111. DOI: 10.1063/1.2833700  0.38
2008 Wang K, Han XD, Zhang Z, Li T, Zhang M, Yan H. Fabrication, characterization, and the rectifying properties of the interfacial structural controlled LaSrMnO–Si heterojunctions Journal of Applied Physics. 103: 14315. DOI: 10.1063/1.2831077  0.349
2008 Mao Y, Huang JY, Ostroumov R, Wang KL, Chang JP. Synthesis and Luminescence Properties of Erbium-Doped Y2O3 Nanotubes Journal of Physical Chemistry C. 112: 2278-2285. DOI: 10.1021/Jp0773738  0.768
2008 Wang KL, Zhao Z, Khitun A. Spintronics for nanoelectronics and nanosystems Thin Solid Films. 517: 184-190. DOI: 10.1016/J.Tsf.2008.08.145  0.363
2008 Cheng SF, Gao L, Woo RL, Pangan A, Malouf G, Goorsky MS, Wang KL, Hicks RF. Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon Journal of Crystal Growth. 310: 562-569. DOI: 10.1016/J.Jcrysgro.2007.11.056  0.348
2008 Yim HI, Lee SY, Hwang JY, Rhee JR, Chun BS, Wang KL, Kim YK, Kim TW, Lee SS, Hwang DG. Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers Physica Status Solidi (a) Applications and Materials Science. 205: 1847-1850. DOI: 10.1002/Pssa.200723639  0.357
2007 Gilje S, Han S, Wang M, Wang KL, Kaner RB. A chemical route to graphene for device applications. Nano Letters. 7: 3394-8. PMID 17944523 DOI: 10.1021/Nl0717715  0.621
2007 Hoang J, Van TT, Sawkar-Mathur M, Hoex B, Van De Sanden MCM, Kessels WMM, Ostroumov R, Wang KL, Bargar JR, Chang JP. Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition Journal of Applied Physics. 101. DOI: 10.1063/1.2748629  0.309
2007 Chen J, Wang KL, Galatsis K. Electrical field control magnetic phase transition in nanostructured MnxGe1−x Applied Physics Letters. 90: 12501. DOI: 10.1063/1.2424658  0.339
2007 Ogawa M, Cha Dh, Lee Jy, Wang KL. Dosage dependence of Ge quantum dots grown on carbon-implanted Si substrates Journal of Crystal Growth. 301: 766-770. DOI: 10.1016/J.Jcrysgro.2006.11.323  0.527
2007 Lee J, Wang KL, Chen H-, Chen L-. High-quality heteroepitaxial Ge growth on nano-patterned Si templates using diblock copolymer patterning Journal of Crystal Growth. 301: 330-334. DOI: 10.1016/J.Jcrysgro.2006.11.108  0.326
2007 Cha D, Ogawa M, Chen C, Kim S, Lee J, Wang KL, Wang J, Russell TP. Intersubband absorption in p-type Si1-xGex quantum dots on pre-patterned Si substrates made by a diblock copolymer process Journal of Crystal Growth. 301: 833-836. DOI: 10.1016/J.Jcrysgro.2006.11.093  0.353
2006 Wang X, Liu F, Andavan GT, Jing X, Singh K, Yazdanpanah VR, Bruque N, Pandey RR, Lake R, Ozkan M, Wang KL, Ozkan CS. Carbon nanotube-DNA nanoarchitectures and electronic functionality. Small (Weinheim An Der Bergstrasse, Germany). 2: 1356-65. PMID 17192987 DOI: 10.1002/Smll.200600056  0.306
2006 Liu WL, Chen YL, Balandin AA, Wang KL. Capacitance-Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors Journal of Nanoelectronics and Optoelectronics. 1: 258-263. DOI: 10.1166/Jno.2006.212  0.338
2006 Yang Z, Liu J, Shi Y, Zheng Y, Wang KL. Folded Acoustic Phonon Modes in Ge/Si Quantum Dot Superlattices With Different Periods Journal of Nanoelectronics and Optoelectronics. 1: 86-91. DOI: 10.1166/Jno.2006.009  0.338
2006 Choi DS, Balandin AA, Leung MS, Stupian GW, Presser N, Chung SW, Heath JR, Khitun A, Wang KL. Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks Applied Physics Letters. 89. DOI: 10.1063/1.2357847  0.343
2006 Van TT, Hoang J, Ostroumov R, Wang KL, Bargar JR, Lu J, Blom HO, Chang JP. Nanostructure and temperature-dependent photoluminescence of Er-doped Y 2O 3 thin films for micro-optoelectronic integrated circuits Journal of Applied Physics. 100. DOI: 10.1063/1.2349477  0.303
2006 Liu JL, Yang Z, Wang KL. Sb surfactant-mediated SiGe graded layers for Ge photodiodes integrated on Si Journal of Applied Physics. 99: 24504. DOI: 10.1063/1.2163013  0.365
2006 Zhao ZM, Yoon TS, Feng W, Li BY, Kim JH, Liu J, Hulko O, Xie YH, Kim HM, Kim KB, Kim HJ, Wang KL, Ratsch C, Caflisch R, Ryu DY, et al. The challenges in guided self-assembly of Ge and InAs quantum dots on Si Thin Solid Films. 508: 195-199. DOI: 10.1016/J.Tsf.2005.08.407  0.314
2006 Lee J, Kim H, Bao M, Wang KL. Pattern size dependence of Si1-xGex epitaxial growth for high mobility device applications Thin Solid Films. 508: 10-13. DOI: 10.1016/J.Tsf.2005.07.358  0.347
2006 Lee J, Chang MN, Wang KL. Size dependence of hall mobility and dislocation density in Ge heteroepitaxial layers grown by MBE on a SiO2 patterned Si template Microelectronics Journal. 37: 1523-1527. DOI: 10.1016/J.Mejo.2006.05.014  0.347
2006 Kim S, Kwack H, Hwang S, Cho Y, Cho HI, Lee JH, Wang KL. Optical characteristics of two‐dimensional electrons in single and multiple AlxGa1–xN/GaN heterostructures grown by metalorganic chemical vapor deposition Physica Status Solidi (C). 3: 2113-2116. DOI: 10.1002/Pssc.200565361  0.32
2005 Zhou J, Luo TM, Gao Y, Xue M, Lau J, Hamasaki T, Hu E, Wang K, Dunn B. Nanoscale Assembly of Nanowires Templated by Microtubules Mrs Proceedings. 901. DOI: 10.1557/Proc-0901-Ra16-41-Rb16-41  0.476
2005 Chen C, Cha D, Lee J, Kim H, Liu F, Tong S, Wang KL, Wang J, Russell TP. Nano-patterned Growth of Ge Quantum Dots for Infrared Detector Applications Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee06-01  0.341
2005 Park CJ, Park YS, Lee HS, Yoon I, Kang TW, Cho HY, Oh J, Wang KL. Deep-Level Defects in AlGaN/GaN Heterostructures Grown Using rf-Plasma-Assisted Molecular Beam Epitaxy Japanese Journal of Applied Physics. 44: 1722-1725. DOI: 10.1143/Jjap.44.1722  0.313
2005 Bao M, Liu F, Baron F, Wang KL, Li R. Tunneling spectroscopy of metal-oxide-semiconductor field-effect transistor at low temperature Applied Physics Letters. 86: 242104. DOI: 10.1063/1.1951055  0.752
2005 Tong S, Kim H, Wang KL. Normal incidence intersubband photoresponse from phosphorus δ-doped Ge dots Applied Physics Letters. 87: 81104. DOI: 10.1063/1.1929068  0.38
2005 Liu F, Bao M, Wang KL, Li C, Lei B, Zhou C. One-dimensional transport of In2O3 nanowires Applied Physics Letters. 86: 213101. DOI: 10.1063/1.1928323  0.365
2005 Khitun A, Wang KL. Multi-functional edge driven nano-scale cellular automata based on semiconductor tunneling nano-structure with a self-assembled quantum dot layer Superlattices and Microstructures. 37: 55-76. DOI: 10.1016/J.Spmi.2004.07.001  0.333
2005 Tong S, Lee J, Kim H, Liu F, Wang KL. Ge dot mid-infrared photodetectors Optical Materials. 27: 1097-1100. DOI: 10.1016/J.Optmat.2004.08.065  0.378
2005 Liu F, Tong S, Kim H, Wang KL. Photoconductive gain of SiGe/Si quantum well photodetectors Optical Materials. 27: 864-867. DOI: 10.1016/J.Optmat.2004.08.025  0.328
2005 Wang KL, Tong S, Kim HJ. Properties and applications of SiGe nanodots Materials Science in Semiconductor Processing. 8: 389-399. DOI: 10.1016/J.Mssp.2004.09.134  0.358
2005 Kang YM, Lee SJ, Kim DY, Kim TW, Woo Y-, Wang KL. Formation of Si nanocrystals utilizing a Au nanoscale island etching mask Materials Research Bulletin. 40: 193-198. DOI: 10.1016/J.Materresbull.2004.06.019  0.338
2005 Liu JL, Wang KL, Xie QH, Thomas SG. The effect of plastic strain relaxation on the morphology of Ge quantum dot superlattices Journal of Crystal Growth. 274: 367-371. DOI: 10.1016/J.Jcrysgro.2004.10.057  0.31
2005 Lee S, Kim DY, Wang KL. Surface, structural, and electrical properties of C54 T{i}S{i}2 thin films grown on n -Si (100) substrates by using high-temperature sputtering and one-step annealing Journal of Materials Science. 40: 5173-5176. DOI: 10.1007/S10853-005-4409-Y  0.346
2004 Zhang Y, Baron FA, Wang KL, Krivokapic Z. Complimentary single-electron/hole action of nanoscale SOI CMOS transistors Ieee Electron Device Letters. 25: 492-494. DOI: 10.1109/Led.2004.830281  0.762
2004 Tong S, Liu F, Khitun A, Wang KL, Liu JL. Tunable normal incidence Ge quantum dot midinfrared detectors Journal of Applied Physics. 96: 773-776. DOI: 10.1063/1.1759081  0.354
2004 Khitun A, Liu J, Wang KL. On the modeling of lattice thermal conductivity in semiconductor quantum dot superlattices Applied Physics Letters. 84: 1762-1764. DOI: 10.1063/1.1668317  0.314
2004 Lee S, Shim YS, Cho HY, Kang TW, Kim DY, Lee YH, Wang KL. Fabrication and characterization of silicon-nanocrystal using platinum-nanomask Thin Solid Films. 451: 379-383. DOI: 10.1016/J.Tsf.2003.10.132  0.343
2004 Liu F, Tong S, Liu J, Wang KL. Normal-Incidence Mid-Infrared Ge Quantum-Dot Photodetector Journal of Electronic Materials. 33: 846-850. DOI: 10.1007/S11664-004-0210-Y  0.311
2004 Lozovik YE, Ovchinnikov IV, Ostroumov RP, Wang KL. Interwell exciton dispersion engineering, coherent phonons generation and optical detection of exciton condensate Physica Status Solidi (B) Basic Research. 241: 85-100. DOI: 10.1002/Pssb.200301927  0.774
2003 Lee S, Shim YS, Cho HY, Kim DY, Kim TW, Wang KL. Optical and Electrical Properties of Si Nanocrystals Embedded in SiO2 Layers Japanese Journal of Applied Physics. 42: 7180-7183. DOI: 10.1143/Jjap.42.7180  0.333
2003 Suligoj T, Koricic M, Biljanovic P, Wang KL. Fabrication of horizontal current bipolar transistor (HCBT) Ieee Transactions On Electron Devices. 50: 1645-1651. DOI: 10.1109/Ted.2003.813910  0.303
2003 Baron FA, Kiselev AA, Robinson HD, Kim KW, Wang KL, Yablonovitch E. Manipulating the L-valley electron g factor in Si-Ge heterostructures Physical Review B. 68: 195306. DOI: 10.1103/Physrevb.68.195306  0.746
2003 Liu JL, Khitun A, Wang KL, Liu WL, Chen G, Xie QH, Thomas SG. Cross-plane thermal conductivity of self-assembled Ge quantum dot superlattices Physical Review B. 67: 165333. DOI: 10.1103/Physrevb.67.165333  0.316
2003 Jin G, Liu JL, Wang KL. Temperature effect on the formation of uniform self-assembled Ge dots Applied Physics Letters. 83: 2847-2849. DOI: 10.1063/1.1616978  0.31
2003 Baron FA, Zhang Y, Bao M, Li R, Li J, Wang KL. Effect of magnetic field on random telegraph noise in the source current of p-channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 83: 710-712. DOI: 10.1063/1.1596381  0.746
2003 Liu JL, Wan J, Wang KL, Yu DP. Critical thickness of self-assembled Ge quantum dot superlattices Journal of Crystal Growth. 251: 666-669. DOI: 10.1016/S0022-0248(02)02509-5  0.335
2002 Wang KL. Issues of nanoelectronics: a possible roadmap. Journal of Nanoscience and Nanotechnology. 2: 235-66. PMID 12908252 DOI: 10.1166/Jnn.2002.115  0.366
2002 Zhang Y, Wan J, Wang KL, Nguyen B. Design of 10-nm-scale recessed asymmetric Schottky barrier MOSFETs Ieee Electron Device Letters. 23: 419-421. DOI: 10.1109/Led.2002.1015225  0.302
2002 Liao XZ, Zou J, Cockayne DJH, Wan J, Jiang ZM, Jin G, Wang KL. Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots Physical Review B. 65: 153306. DOI: 10.1103/Physrevb.65.153306  0.34
2002 Yang B, Liu JL, Wang KL, Chen G. Simultaneous measurements of Seebeck coefficient and thermal conductivity across superlattice Applied Physics Letters. 80: 1758-1760. DOI: 10.1063/1.1458693  0.331
2002 Tong S, Liu JL, Wan J, Wang KL. Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate Applied Physics Letters. 80: 1189-1191. DOI: 10.1063/1.1449525  0.369
2002 Wang KL, Liu JL, Jin G. Self-assembled Ge quantum dots on Si and their applications Journal of Crystal Growth. 237: 1892-1897. DOI: 10.1016/S0022-0248(01)02212-6  0.537
2001 Yang B, Liu JL, Wang KL, Chen G. Cross-Plane Thermoelectric Properties in Si/Ge Superlattices Mrs Proceedings. 691. DOI: 10.1557/Proc-691-G3.2  0.303
2001 Luo YH, Wan J, Liu JL, Wang KL. Optical study of SiGe films grown with low temperature Si buffer Mrs Proceedings. 673. DOI: 10.1557/Proc-673-P3.11  0.3
2001 Wan J, Luo YH, Jin GL, Jiang ZM, Liu JL, Liao XZ, Zou J, Wang KL. Photoluminescence of multi-layer GeSi dots grown on Si (001) Mrs Proceedings. 667. DOI: 10.1557/Proc-667-G6.4  0.357
2001 Knoch J, Appenzeller J, Lengeler B, Martel R, Solomon P, Avouris P, Dieker C, Lu Y, Wang KL, Scholvin J, del Alamo JA. Technology for the fabrication of ultrashort channel metal–oxide–semiconductor field-effect transistors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 19: 1737-1741. DOI: 10.1116/1.1351803  0.335
2001 Khitun A, Ostroumov R, Wang KL. Spin-wave utilization in a quantum computer Physical Review A. 64: 62304. DOI: 10.1103/Physreva.64.062304  0.311
2001 Altukhov IV, Chirkova EG, Sinis VP, Kagan MS, Gousev YP, Thomas SG, Wang KL, Odnoblyudov MA, Yassievich IN. Towards Si1−xGex quantum-well resonant-state terahertz laser Applied Physics Letters. 79: 3909-3911. DOI: 10.1063/1.1423771  0.33
2001 Liu JL, Tong S, Luo YH, Wan J, Wang KL. High-quality Ge films on Si substrates using Sb surfactant-mediated graded SiGe buffers Applied Physics Letters. 79: 3431-3433. DOI: 10.1063/1.1421092  0.357
2001 Wan J, Luo YH, Jiang ZM, Jin G, Liu JL, Wang KL, Liao XZ, Zou J. Effects of interdiffusion on the band alignment of GeSi dots Applied Physics Letters. 79: 1980-1982. DOI: 10.1063/1.1405152  0.332
2001 Wan J, Luo YH, Jiang ZM, Jin G, Liu JL, Wang KL, Liao XZ, Zou J. Ge/Si interdiffusion in the GeSi dots and wetting layers Journal of Applied Physics. 90: 4290-4292. DOI: 10.1063/1.1403667  0.364
2001 Liao XZ, Zou J, Cockayne DJH, Wan J, Jiang ZM, Jin G, Wang KL. Annealing effects on the microstructure of Ge/Si(001) quantum dots Applied Physics Letters. 79: 1258-1260. DOI: 10.1063/1.1398615  0.345
2001 Wan J, Jin GL, Jiang ZM, Luo YH, Liu JL, Wang KL. Band alignments and photon-induced carrier transfer from wetting layers to Ge islands grown on Si(001) Applied Physics Letters. 78: 1763-1765. DOI: 10.1063/1.1356454  0.352
2001 Luo YH, Liu JL, Jin G, Wan J, Wang KL, Moore CD, Goorsky MS, Chin C, Tu KN. Effective compliant substrate for low-dislocation relaxed sige growth Applied Physics Letters. 78: 1219-1221. DOI: 10.1063/1.1351520  0.363
2001 Krapf D, Adoram B, Shappir J, Sa'ar A, Thomas SG, Liu JL, Wang KL. Infrared multispectral detection using Si/SixGe1-x quantum well infrared photodetectors Applied Physics Letters. 78: 495-497. DOI: 10.1063/1.1343498  0.358
2001 Appenzeller J, Martel R, Solomon P, Chan K, Avouris P, Knoch J, Benedict J, Tanner M, Thomas S, Wang KL, Del Alamo JA. A 10 nm MOSFET concept Microelectronic Engineering. 56: 213-219. DOI: 10.1016/S0167-9317(00)00530-X  0.307
2001 Liu JL, Khitun A, Wang KL, Borca-Tasciuc T, Liu WL, Chen G, Yu DP. Growth of Ge quantum dot superlattices for thermoelectric applications Journal of Crystal Growth. 227: 1111-1115. DOI: 10.1016/S0022-0248(01)00998-8  0.324
2001 Jin G, Wan J, Luo YH, Liu JL, Wang KL. Uniform and ordered self-assembled Ge dots on patterned Si substrates with selectively epitaxial growth technique Journal of Crystal Growth. 227: 1100-1105. DOI: 10.1016/S0022-0248(01)00996-4  0.504
2001 Khitun A, Balandin A, Liu JL, Wang KL. The effect of the long-range order in a quantum dot array on the in-plane lattice thermal conductivity Superlattices and Microstructures. 30: 1-8. DOI: 10.1006/Spmi.2001.0981  0.334
2000 Choi SH, Li R, Pak M, Wang KL, Leung MS, Stupian GW, Presser N. In-situ characterization of thin films by the focused ion beam Journal of Vacuum Science and Technology. 18: 1701-1703. DOI: 10.1116/1.582410  0.332
2000 Choi SH, Wang KL, Leung MS, Stupian GW, Presser N, Morgan BA, Robertson RE, Abraham M, King EE, Tueling MB, Chung SW, Heath JR, Cho SL, Ketterson JB. Fabrication of bismuth nanowires with a silver nanocrystal shadowmask Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 1326-1328. DOI: 10.1116/1.582348  0.369
2000 Vrijen R, Yablonovitch E, Wang K, Jiang HW, Balandin A, Roychowdhury V, Mor T, DiVincenzo D. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures Physical Review a - Atomic, Molecular, and Optical Physics. 62: 1-10. DOI: 10.1103/Physreva.62.012306  0.372
2000 Khitun A, Wang KL, Chen G. Thermoelectric figure of merit enhancement in a quantum dot superlattice Nanotechnology. 11: 327-331. DOI: 10.1088/0957-4484/11/4/327  0.336
2000 Khitun A, Balandin A, Liu JL, Wang KL. In-plane lattice thermal conductivity of a quantum-dot superlattice Journal of Applied Physics. 88: 696-699. DOI: 10.1063/1.373723  0.349
2000 Jin G, Liu JL, Wang KL. Regimented placement of self-assembled Ge dots on selectively grown Si mesas Applied Physics Letters. 76: 3591-3593. DOI: 10.1063/1.126716  0.319
2000 Liu JL, Jin G, Tang YS, Luo YH, Wang KL, Yu DP. Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices Applied Physics Letters. 76: 586-588. DOI: 10.1063/1.125825  0.32
2000 Balandin A, Wang KL, Kouklin N, Bandyopadhyay S. Raman spectroscopy of electrochemically self-assembled CdS quantum dots Applied Physics Letters. 76: 137-139. DOI: 10.1063/1.125681  0.307
2000 Adoram B, Krapf D, Levy M, Beserman R, Thomas S, Wang KL, Shappir J, Sa'ar A. Thermal relaxation processes in Si1-xGex/Si quantum wells studied by inter-subband and inter-valence band spectroscopy Physica E: Low-Dimensional Systems and Nanostructures. 7: 255-258. DOI: 10.1016/S1386-9477(99)00317-3  0.343
2000 Khitun A, Balandin A, Wang KL, Chen G. Enhancement of the thermoelectric figure of merit of Si1−xGex quantum wires due to spatial confinement of acoustic phonons Physica E-Low-Dimensional Systems & Nanostructures. 8: 13-18. DOI: 10.1016/S1386-9477(00)00119-3  0.35
2000 D. U'Ren G, Goorsky MS, Wang KL. Influence of misfit strain on {311} facet development in selective epitaxial growth of Si1-xGex/Si(100) grown by gas-source molecular beam epitaxy Thin Solid Films. 365: 147-150. DOI: 10.1016/S0040-6090(99)01114-1  0.318
2000 Kagan MS, Altukhov IV, Sinis VP, Thomas SG, Wang KL, Chao KA, Yassievich IN. Terahertz emission of SiGe/Si quantum wells Thin Solid Films. 380: 237-239. DOI: 10.1016/S0040-6090(00)01530-3  0.326
2000 Altukhov IV, Kagan MS, Sinis VP, Thomas SG, Wang KL, Blom A, Odnoblyudov MO. Hole transport due to shallow acceptors along boron doped SiGe quantum wells Thin Solid Films. 380: 218-220. DOI: 10.1016/S0040-6090(00)01509-1  0.356
2000 Jin G, Liu JL, Luo YH, Wang KL. Cooperative arrangement of self-assembled Ge dots on pre-grown Si mesas Thin Solid Films. 380: 169-172. DOI: 10.1016/S0040-6090(00)01495-4  0.524
2000 Liu JL, Radetic T, Tang YS, Teng D, Jin G, Luo YH, Wan J, Gronsky R, Wang KL. Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55-μm photodetector applications Thin Solid Films. 380: 54-56. DOI: 10.1016/S0040-6090(00)01468-1  0.541
2000 Liu JL, Wang KL, Moore CD, Goorsky MS, Borca-Tasciuc T, Chen G. Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications Thin Solid Films. 369: 121-125. DOI: 10.1016/S0040-6090(00)00849-X  0.33
2000 Jin G, Liu JL, Luo YH, Wang KL. Control of the arrangement of self-organized Ge dots on patterned Si(001) substrates Thin Solid Films. 369: 49-54. DOI: 10.1016/S0040-6090(00)00833-6  0.508
2000 Luo YH, Liu JL, Jin G, Wang KL, Moore CD, Goorsky MS, Chih C, Tu K. Low-dislocation relaxed SiGe grown on an effective compliant substrate Journal of Electronic Materials. 29: 950-955. DOI: 10.1007/S11664-000-0187-0  0.368
2000 Balandin A, Wang KL, Cai S, Li R, Viswanathan CR, Wang EN, Wojtowicz M. Investigation of flicker noise and deep-levels in GaN/AlGaN transistors Journal of Electronic Materials. 29: 297-301. DOI: 10.1007/S11664-000-0066-8  0.317
2000 Borca-Tasciuc T, Liu W, Liu J, Zeng T, Song DW, Moore CD, Chen G, Wang KL, Goorsky MS, Radetic T, Gronsky R, Koga T, Dresselhaus MS. Thermal conductivity of symmetrically strained Si/Ge superlattices Superlattices and Microstructures. 28: 199-206. DOI: 10.1006/Spmi.2000.0900  0.333
1999 Jin G, Tang YS, Liu JL, Thomas SG, Wang KL. Mechanism of the Preferential Edge-Positioning of Self-Organized Ge Quantum Dots on Si Mesas Mrs Proceedings. 571: 31. DOI: 10.1557/Proc-571-31  0.307
1999 Liu JL, Cai SJ, Jin GL, Wang KL. Wirelike Growth of Si on an Au / Si ( 111 ) Substrate by Gas Source Molecular Beam Epitaxy Electrochemical and Solid State Letters. 1: 188-190. DOI: 10.1149/1.1390680  0.318
1999 Liu JL, Wu WG, Tang YS, Wang KL, Radetic T, Gronsky R. Raman scattering and infrared absorption in multiple boron-doped Ge dots Journal of Vacuum Science and Technology. 17: 1420-1424. DOI: 10.1116/1.581830  0.357
1999 Jin G, Tang YS, Liu JL, Wang KL. Self-organized Ge quantum wires on Si(111) substrates Journal of Vacuum Science and Technology. 17: 1406-1409. DOI: 10.1116/1.581828  0.332
1999 Balandin A, Wang KL, Svizhenko A, Bandyopadhyay S. The fundamental 1/f noise and the Hooge parameter in semiconductor quantum wires Ieee Transactions On Electron Devices. 46: 1240-1244. DOI: 10.1109/16.766892  0.306
1999 Jin G, Liu JL, Thomas SG, Luo YH, Wang KL, Nguyen B. Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates Applied Physics Letters. 75: 2752-2754. DOI: 10.1063/1.125138  0.313
1999 Adoram B, Krapf D, Shappir J, Sa’ar A, Levy M, Beserman R, Thomas SG, Wang KL. Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si1−xGex multiple quantum wells Applied Physics Letters. 75: 2232-2234. DOI: 10.1063/1.124974  0.339
1999 Balandin A, Morozov S, Wijeratne G, Cai SJ, Li R, Li J, Wang KL, Viswanathan CR, Dubrovskii Y. Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors Applied Physics Letters. 75: 2064-2066. DOI: 10.1063/1.124917  0.322
1999 Liu JL, Wu WG, Balandin A, Jin G, Luo YH, Thomas SG, Lu Y, Wang KL. Observation of inter-sub-level transitions in modulation-doped Ge quantum dots Applied Physics Letters. 75: 1745-1747. DOI: 10.1063/1.124806  0.353
1999 Liu JL, Moore CD, U’Ren GD, Luo YH, Lu Y, Jin G, Thomas SG, Goorsky MS, Wang KL. A surfactant-mediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface Applied Physics Letters. 75: 1586-1588. DOI: 10.1063/1.124762  0.345
1999 Liu JL, Tang YS, Wang KL, Radetic T, Gronsky R. Raman scattering from a self-organized Ge dot superlattice Applied Physics Letters. 74: 1863-1865. DOI: 10.1063/1.123694  0.348
1999 Liu JL, Cai SJ, Jin GL, Thomas SG, Wang KL. Growth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE) Journal of Crystal Growth. 200: 106-111. DOI: 10.1016/S0022-0248(98)01408-0  0.307
1999 Liu J, Tang Y, Wang KL. Study of phonons in self-organized multiple Ge quantum dots Journal of Electronic Materials. 28: 1010. DOI: 10.1007/S11664-000-0044-1  0.339
1999 Wu W, Liu J, Tang Y, Wang KL. Infrared spectroscopy of intraband transitions in Ge/Si quantum dot superlattices Superlattices and Microstructures. 26: 219-227. DOI: 10.1006/Spmi.1999.0778  0.359
1999 Khitun A, Balandin A, Wang KL. Modification of the lattice thermal conductivity in silicon quantum wires due to spatial confinement of acoustic phonons Superlattices and Microstructures. 26: 181-193. DOI: 10.1006/Spmi.1999.0772  0.321
1999 Liu JL, Cai SJ, Jin GL, Tang YS, Wang KL. Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate Superlattices and Microstructures. 25: 477-479. DOI: 10.1006/Spmi.1998.0678  0.334
1999 Kagan MS, Altukhov IV, Korolev KA, Orlov DV, Sinis VP, Thomas SG, Wang KL, Schmalz K, Yassievich IN. Lateral Transport In Boron Doped Sige Quantum Wells Superlattices and Microstructures. 25: 203-206. DOI: 10.1006/Spmi.1998.0638  0.359
1999 Balandin A, Wang KL. Feasibility study of the quantum XOR gate based on coupled asymmetric semiconductor quantum dots Superlattices and Microstructures. 25: 509-518. DOI: 10.1006/Spmi.1998.0601  0.309
1998 Borca-Tasciuc T, Song D, Liu JL, Chen G, Wang KL, Sun X, Dresselhaus MS, Radetic T, Gronsky R. Anisotropic Thermal Conductivity of A Si/Ge Superlattice Mrs Proceedings. 545. DOI: 10.1557/Proc-545-473  0.303
1998 Sun X, Liu J, Cronin SB, Wang KL, Chen G, Koga T, Dresselhaus MS. Experimental Study of the Effect of the Quantum Well Structures on the Thermoelectric Figure of Merit in Si/Si1-xGex System Mrs Proceedings. 545. DOI: 10.1557/Proc-545-369  0.374
1998 Liu J, Balandin A, Borca-Tascjuc T, Tang YS, Wang KL, Chen G. Experimental Study of Phonon-Folding in Si/Ge and Si/Sige Structures Designed for Thermoelectric Applications Mrs Proceedings. 545. DOI: 10.1557/Proc-545-111  0.351
1998 Balandin A, Wang KL. Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well Physical Review B. 58: 1544-1549. DOI: 10.1103/Physrevb.58.1544  0.328
1998 Schmalz K, Yassievich IN, Wang KL, Thomas SG. Localized-State Band Induced By B Delta -Doping In Si/Si1-Xgex/Si Quantum Wells Physical Review B. 57: 6579-6583. DOI: 10.1103/Physrevb.57.6579  0.326
1998 Balandin A, Wang KL. Effect of phonon confinement on the thermoelectric figure of merit of quantum wells Journal of Applied Physics. 84: 6149-6153. DOI: 10.1063/1.368928  0.313
1998 Zhu X, Zheng X, Pak M, Tanner MO, Wang KL. Bistable diodes grown by silicon molecular beam epitaxy Thin Solid Films. 321: 201-205. DOI: 10.1016/S0040-6090(98)00473-8  0.354
1998 Tang Y, Cai S, Jin G, Wang K, Soyez H, Dunn B. Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate Thin Solid Films. 321: 76-80. DOI: 10.1016/S0040-6090(98)00447-7  0.34
1998 Sakamoto K, Matsuhata H, Tanner MO, Wang D, Wang KL. Alignment of Ge three-dimensional islands on faceted Si(001) surfaces Thin Solid Films. 321: 55-59. DOI: 10.1016/S0040-6090(98)00443-X  0.34
1997 Tang YS, Cai S, Wang D, Jin G, Duan J, Wang KL, Soyez HM, Dunn BS. Control of Sizes and Optical Emission of Sige Quantum Dots Prepared on Ordered Mesoporous Silica Coated Si Wafer Mrs Proceedings. 486. DOI: 10.1557/Proc-486-255  0.524
1997 Perera AOU, Shen WZ, Tanner MO, Wang KL, Schaff W. Free Carrier Absorption in P-Type Epitaxial Si and GaAs Films for far-Infrared Detection Mrs Proceedings. 484: 199. DOI: 10.1557/Proc-484-199  0.31
1997 Sun X, Dresselhaus MS, Wang KL, Tanner MO. Quantum Confinement Effects on the Thermoelectric Figure of Merit in Si/Si1−xGex System Mrs Proceedings. 478. DOI: 10.1557/Proc-478-169  0.388
1997 Im S, Eisen F, Nicolet MA, Tanner MO, Wang KL, Theodore ND. Strain-conserving doping of a pseudomorphic metastable Ge0.06Si0.94 layer on Si(100) by low-dose BF2+ implantation Journal of Applied Physics. 81: 1695-1699. DOI: 10.1063/1.364026  0.356
1997 Tang YS, Cai S, Jin G, Duan J, Wang KL, Soyez HM, Dunn BS. SiGe quantum dots prepared on an ordered mesoporous silica coated Si substrate Applied Physics Letters. 71: 2448-2450. DOI: 10.1063/1.120085  0.534
1997 Wang D, Thomas SG, Wang KL, Xia Y, Whitesides GM. Nanometer scale patterning and pattern transfer on amorphous Si, crystalline Si, and SiO2 surfaces using self-assembled monolayers Applied Physics Letters. 70: 1593-1595. DOI: 10.1063/1.118625  0.308
1997 Huang FY, Tang YS, Duan JN, Wang KL. Photoluminescence from SiGe/Si quantum dots with wavelength in the visible range Electronics Letters. 33: 1736-1737. DOI: 10.1049/El:19971171  0.353
1997 Xiang Q, Li S, Wang D, Sakamoto K, Wang KL, U'Ren G, Goorsky M. Sidewall faceting and inter-facet mass transport in selectively grown epitaxial layers on SiO2-masked Si(1 1 0) substrates Journal of Crystal Growth. 469-472. DOI: 10.1016/S0022-0248(96)01217-1  0.316
1997 Chu MA, Tanner MO, Huang F, Wang KL, Chu GG, Goorsky MS. Photoluminescence and X-ray characterization of relaxed Si1 − xGex alloys grown on silicon on insulator (SOI) and implanted SOI substrates Journal of Crystal Growth. 1278-1283. DOI: 10.1016/S0022-0248(96)00933-5  0.347
1997 Khurgin JB, Wang KL. Solid state spin-flip terahertz maser Superlattices and Microstructures. 22. DOI: 10.1006/Spmi.1997.0469  0.309
1997 Ding Y, Cui A, Gorbounova O, Veliadis J, Lee S, Khurgin J, Wang K. Evidence of strong sequential band filling at interface islands in asymmetric coupled quantum wells Superlattices and Microstructures. 22: 497-503. DOI: 10.1006/Spmi.1996.0435  0.309
1996 Sun X, Dresselhaus MS, Wang KL, Tanner MO. Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit in the Si/Si1-xGex System Mrs Proceedings. 452. DOI: 10.1557/Proc-452-261  0.347
1996 Nayak DK, Woo JCS, Park JS, Wang KL, MacWilliams KP. Hole confinement in a Si/GeSi/Si quantum well on SIMOX Ieee Transactions On Electron Devices. 43: 180-182. DOI: 10.1109/16.477614  0.362
1996 Kim TW, Kang TW, Wang KL. Magnetotransport and electronic subband studies in SixGe1−xSi strained single quantum wells Solid State Communications. 99: 47-51. DOI: 10.1016/0038-1098(96)00078-6  0.374
1995 Kang TW, Park WJ, Chung CK, Park JS, Wang KL, Kim TW. Interface-related defects in a Ge0.4Si0.6/Si single well Semiconductor Science and Technology. 10: 179-182. DOI: 10.1088/0268-1242/10/2/010  0.32
1995 Lie DYC, Song JH, Vantomme A, Eisen F, Nicolet M‐, Theodore ND, Carns TK, Wang KL. Dependence of damage and strain on the temperature of Si irradiation in epitaxial Ge0.10Si0.90 films on Si(100) Journal of Applied Physics. 77: 2329-2338. DOI: 10.1063/1.358755  0.304
1995 Wang D, Tsau L, Wang KL, Chow P. Nanofabrication Of Thin Chromium Film Deposited On Si(100) Surfaces By Tip Induced Anodization In Atomic Force Microscopy Applied Physics Letters. 67: 1295-1297. DOI: 10.1063/1.114402  0.334
1995 Heyd AR, Alterovitz SA, Croke ET, Wang KL, Lee CH. Applications of variable angle spectroscopic ellipsometry to strained SiGe alloy heterostructures Thin Solid Films. 270: 91-96. DOI: 10.1016/0040-6090(95)06848-1  0.301
1995 Woo YD, Lee HI, Kang TW, Kim T, Wang KL. Optical properties of strained SimGen monolayer superlattices grown on Si(100) substrates by molecular beam epitaxy Solid State Communications. 96: 975-979. DOI: 10.1016/0038-1098(95)00503-X  0.304
1995 Zhu X, Xiang Q, Chu M, Wang KL. Band-gap luminescence in strain-symmetrized Sim/Gen superlattices grown by molecular beam epitaxy using gaseous Si2H6 and solid Ge Journal of Crystal Growth. 150: 1045-1049. DOI: 10.1016/0022-0248(95)80098-W  0.33
1995 Tanner MO, Chu MA, Wang KL, Meshkinpour M, Goorsky MS. Relaxed Si1-xGex films with reduced dislocation densities grown by molecular beam epitaxy Journal of Crystal Growth. 157: 121-125. DOI: 10.1016/0022-0248(95)00379-7  0.34
1995 Woo YD, Lee HI, Kang TW, Kim TW, Wang KL. Reduction of the dislocation density for GaAs thin films on Si substrates grown by molecular beam epitaxy using the two-step growth method Journal of Materials Science Letters. 14: 1340-1343. DOI: 10.1007/Bf00270721  0.376
1995 Wang KL, Thomas SG, Tanner MO. SiGe band engineering for MOS, CMOS and quantum effect devices Journal of Materials Science: Materials in Electronics. 6: 311-324. DOI: 10.1007/Bf00125886  0.349
1994 Ming ZH, Huang S, Soo YL, Kao YH, Carns T, Wang KL. Variations of Interfacial Roughness with Epilayer Thickness and Scaling Behavior in Si1−x,Gex, Grown on Si(100) Substrates Mrs Proceedings. 367. DOI: 10.1557/Proc-367-311  0.32
1994 Lie DYC, Song JH, Theodore ND, Eisen F, Nicolet M, Cams TK, Wang KL, Kinoshita H, Huang T, Kwong DL. Steady-State Versus Rapid Thermal Annealing of Phosphorusimplanted Pseudomorphic Si(100)/Ge0.12Si0.88 Mrs Proceedings. 342. DOI: 10.1557/Proc-342-51  0.302
1994 Hartung J, Higgs V, Davies G, Lightowlers EC, Arbet-Engels V, Wang KL. Photoluminescence from Localized Excitons in Si/Ge Superlattices Japanese Journal of Applied Physics. 33: 2340-2343. DOI: 10.1143/Jjap.33.2340  0.341
1994 Li HS, Chen YW, Wang KL, Pan DS, Chen LP, Liu JM. Photocontrolled double‐barrier resonant‐tunneling diode Journal of Vacuum Science & Technology B. 12: 1269-1272. DOI: 10.1116/1.587019  0.312
1994 Carns TK, Chun SK, Tanner MO, Wang KL, Kamins TI, Turner JE, Lie DYC, Nicolet M-, Wilson RG. Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers Ieee Transactions On Electron Devices. 41: 1273-1281. DOI: 10.1109/16.293358  0.32
1994 Jo J, Li HS, Chen YW, Wang KL. Observation of a large capacitive current in a double barrier resonant tunneling diode at resonance Applied Physics Letters. 64: 2276-2278. DOI: 10.1063/1.111642  0.315
1994 Jiang HW, Johnson CE, Wang KL, Hannahs ST. Magnetic-field-induced transition: from an Anderson insulator to a quantum Hall conductor Physica B-Condensed Matter. 197: 120-123. DOI: 10.1016/0921-4526(94)90244-5  0.342
1994 Woo YD, Kang TW, Kim T, Lee JY, Kuo TC, Wang KL. High-resolution transmission electron microscopy of the CoGa/GaAs heterostructure grown by molecular beam epitaxy Solid State Communications. 91: 219-221. DOI: 10.1016/0038-1098(94)90227-5  0.337
1994 Liu WS, Nicolet M-, Carns TK, Wang KL. Epitaxial Ge layers on Si via Ge x Si 1−x O 2 reduction: the roles of the hydrogen partial pressure and the Ge content Journal of Electronic Materials. 23: 437-440. DOI: 10.1007/Bf02671226  0.325
1994 Lie DYC, Vantomme A, Eisen F, Vreeland T, Nicolet M-, Carns TK, Wang KL, Höllander B. Damage and strain in pseudomorphic vs relaxed Ge x Si 1−x layers on Si(100) generated by Si ion irradiation Journal of Electronic Materials. 23: 369-373. DOI: 10.1007/Bf02671216  0.303
1993 Nayak DK, Woo JCS, Park JS, Wang KL, MacWilliams KP. Hole Confinement in a Si/GeSi/Si Quantum Well on SIMOX The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1993.S-I-9-3  0.321
1993 Hartung J, Higgs V, Davies G, Lightowlers EC, Arbet-Engels V, Wang KL. Photoluminescence from Si/Ge Superlattices The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1993.Pb-1-14  0.302
1993 Nayak DK, Woo JCS, Yabiku GK, MacWilliams KP, Park JS, Wang KL. High-mobility GeSi PMOS on SIMOX Ieee Electron Device Letters. 14: 520-522. DOI: 10.1109/55.258002  0.328
1993 Sieg RM, Alterovitz SA, Croke ET, Harrell MJ, Tanner M, Wang KL, Mena RA, Young PG. Characterization of SixGe1-x/Si heterostructures for device applications using spectroscopic ellipsometry Journal of Applied Physics. 74: 586-595. DOI: 10.1063/1.355271  0.366
1993 Tijero JMG, Arbet‐Engels V, Manissadjian A, Wang KL, Higgs V. Effect of hydrogenation on the luminescence of strained Si1−xGex alloy layers grown by molecular beam epitaxy Journal of Applied Physics. 74: 1279-1282. DOI: 10.1063/1.354932  0.31
1993 Wu SL, Carns TK, Wang S, Wang KL. Boron delta-doped Si metal semiconductor field-effect transistor grown by molecular-beam epitaxy Applied Physics Letters. 63: 1363-1365. DOI: 10.1063/1.110769  0.389
1993 Khorram S, Wang KL, Block T, Streit D. Carrier transport in GaAs/AlGaAs heterostructures by microwave time-of-flight technique Applied Physics Letters. 63: 3491-3493. DOI: 10.1063/1.110130  0.316
1993 Nayak DK, Woo JCS, Park JS, Wang KL, MacWilliams KP. High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si Applied Physics Letters. 62: 2853-2855. DOI: 10.1063/1.109205  0.341
1993 Kim K, Choi SD, Wang KL. Si heterojunction diodes with a thin β-SiC layer prepared with gas layer source molecular beam epitaxy Thin Solid Films. 225: 235-239. DOI: 10.1016/0040-6090(93)90161-H  0.325
1993 Arbet-Engels V, Tijero JMG, Manissadjian A, Wang KL, Higgs V. Investigation of the growth technique dependence on the optical properties of Si1-xGex alloy layers Journal of Crystal Growth. 127: 406-410. DOI: 10.1016/0022-0248(93)90649-H  0.327
1993 Chen Y, Li H, Wang K. Study of Stark effect in AlSb/GaSb/InAs/AlSb quantum well Superlattices and Microstructures. 14: 137-140. DOI: 10.1006/Spmi.1993.1114  0.331
1993 Kim DY, Kang TW, Kim TW, Wang KL, Bojen WS. Photoluminescence studies on GaAs/Ge/Si and GaAs/SiGe/Ge/Si heterostructures after annealing and hydrogenation Physica Status Solidi (a). 139: 443-449. DOI: 10.1002/Pssa.2211390217  0.335
1992 Chern CH, Tijero JMG, Wang KL, Wang SJ. Resonant magnetotunneling of GexSi1−x resonant tunneling structures grown at extremely low temperature by molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 10: 937-939. DOI: 10.1116/1.586093  0.331
1992 Kim K, Choi S, Wang KL. Growth of β‐SiC film on Si substrate by surface reaction using hydrocarbon gas and Si molecular beams in ultrahigh vacuum Journal of Vacuum Science & Technology B. 10: 930-933. DOI: 10.1116/1.586091  0.314
1992 Nayak DK, Kamjoo K, Park JS, Woo JCS, Wang KL. Rapid isothermal processing of strained GeSi layers Ieee Transactions On Electron Devices. 39: 56-63. DOI: 10.1109/16.108212  0.315
1992 Liu WS, Lee EW, Nicolet MA, Arbet-Engels V, Wang KL, Abuhadba NM, Aita CR. Wet oxidation of GeSi at 700°C Journal of Applied Physics. 71: 4015-4018. DOI: 10.1063/1.350847  0.328
1992 Adams PM, Bowman RC, Ahn CC, Chang SJ, Arbet-Engels V, Kallel MA, Wang KL. Structural characterization of SimGen strained layer superlattices Journal of Applied Physics. 71: 4305-4313. DOI: 10.1063/1.350812  0.32
1992 Arbet‐Engels V, Tijero JMG, Manissadjian A, Wang KL, Higgs V. Luminescence of strained Si1-xGex alloy layers grown by molecular beam epitaxy Applied Physics Letters. 61: 2586-2588. DOI: 10.1063/1.108135  0.349
1992 Kiledjian MS, Schulman JN, Wang KL, Rousseau KV. Hole and interband resonant tunneling in GaAs/GaAlAs and InAs/GaSb/AlSb tunnel structures Surface Science. 267: 405-408. DOI: 10.1016/0039-6028(92)91163-6  0.321
1992 Wang KL, Karunasiri RPG, Park JS. Intersubband absorption in Si1-xGex/Si and δ-dope Si multiple quantum wells Surface Science. 267: 74-78. DOI: 10.1016/0039-6028(92)91092-P  0.368
1991 Park JS, Karunasiri RPG, Wang KL, Mii YJ, Murray J. Observation of Intersubband Absorption in Boron δ-Doped Si Layers Mrs Proceedings. 220: 85. DOI: 10.1557/Proc-220-85  0.335
1991 Kennedy TA, Glaser ER, Trombetta JM, Wang KL, Chern CH, Arbet-Engels V. Characterization of Si 1−x Ge x /Si Heterostructures Using Optically-Detected Magnetic Resonance Mrs Proceedings. 220. DOI: 10.1557/Proc-220-271  0.345
1991 Baugh DA, Talin AA, Williams RS, Kuo TC, Wang KL. Phase stability versus the lattice mismatch of (100)Co1-xGax thin films on (100)GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2154-2157. DOI: 10.1116/1.585756  0.362
1991 Nayak DK, Woo JCS, Park JS, Wang KL, MacWilliams KP. Enhancement-Mode Quantum-Well Ge<inf>x</inf> Si<inf>1―x</inf> PMOS Ieee Electron Device Letters. 12: 154-156. DOI: 10.1109/55.75748  0.344
1991 Kamjoo K, Nayak DK, Park JS, Woo JCS, Wang KL. Study of Si/GeSi p-n heterostructures Journal of Applied Physics. 69: 6674-6678. DOI: 10.1063/1.348884  0.325
1991 Park JS, Karunasiri RPG, Mii YJ, Wang KL. Hole intersubband absorption in δ‐doped multiple Si layers Applied Physics Letters. 58: 1083-1085. DOI: 10.1063/1.104378  0.352
1991 Prokes SM, Glembocki OJ, Wang KL. Optical and structural studies of relaxation in strained-layer superlattices Superlattices and Microstructures. 10: 113-118. DOI: 10.1016/0749-6036(91)90158-N  0.302
1991 Kuo TC, Kang TW, Wang KL. RHEED studies of epitaxial growth of CoGa on GaAs by MBE — determination of epitaxial phases and orientations Journal of Crystal Growth. 111: 996-1002. DOI: 10.1016/0022-0248(91)91121-P  0.316
1991 Kallel MA, Arbet-Engels V, Wang KL, Karunasiri RPG. MBE SimGen strained monolayer superlattices Journal of Crystal Growth. 111: 897-901. DOI: 10.1016/0022-0248(91)91103-H  0.331
1991 Wu BJ, Mii YJ, Chen M, Wang KL, Murray JJ. Reduced silicon donor incorporation in MBE grown GaAs layers using cracker-generated dimer arsenic Journal of Crystal Growth. 111: 252-259. DOI: 10.1016/0022-0248(91)90980-J  0.35
1991 Prokes SM, Glembocki OJ, Twigg ME, Wang KL. The study of relaxation in asymmetrically strained Si 1-x Ge x/ Si superlattices Journal of Electronic Materials. 20: 389-394. DOI: 10.1007/Bf02670889  0.321
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