Year |
Citation |
Score |
2010 |
Xu D, Sriram V, Ozolins V, Yang J, Tu KN, Stafford GR, Beauchamp C. Erratum: “In situ measurements of stress evolution for nanotwin formation during pulse electrodeposition of copper” [J. Appl. Phys. 105, 023521 (2009)] Journal of Applied Physics. 108: 099901. DOI: 10.1063/1.3503174 |
0.485 |
|
2010 |
Xu D, Kwan WL, Chen K, Zhang X, Ozolins V, Tu K. Erratum: “Nanotwin formation in copper thin films by stress/strain relaxation in pulse electrodeposition” [Appl. Phys. Lett. 91, 254105 (2007)] Applied Physics Letters. 97: 129904. DOI: 10.1063/1.3489689 |
0.499 |
|
2009 |
Xu D, Sriram V, Ozolins V, Yang JM, Tu KN, Stafford GR, Beauchamp C. In situ measurements of stress evolution for nanotwin formation during pulse electrodeposition of copper Journal of Applied Physics. 105. DOI: 10.1063/1.3068191 |
0.507 |
|
2008 |
Wang DH, Xu D, Wang Q, Hao YJ, Jin GQ, Guo XY, Tu KN. Periodically twinned SiC nanowires. Nanotechnology. 19: 215602. PMID 21730575 DOI: 10.1088/0957-4484/19/21/215602 |
0.457 |
|
2008 |
Xu L, Xu D, Tu KN, Cai Y, Wang N, Dixit P, Pang JHL, Miao J. Structure and migration of (112) step on (111) twin boundaries in nanocrystalline copper Journal of Applied Physics. 104: 113717. DOI: 10.1063/1.3035944 |
0.479 |
|
2008 |
Xu D, Sriram V, Ozolins V, Yang JM, Tu KN, Stafford GR, Beauchamp C, Zienert I, Geisler H, Hofmann P, Zschech E. Nanotwin formation and its physical properties and effect on reliability of copper interconnects Microelectronic Engineering. 85: 2155-2158. DOI: 10.1016/J.Mee.2008.04.035 |
0.33 |
|
2007 |
Xu D, Kwan WL, Chen K, Zhang X, Ozoliņš V, Tu KN. Nanotwin formation in copper thin films by stress/strain relaxation in pulse electrodeposition Applied Physics Letters. 91: 254105. DOI: 10.1063/1.2825412 |
0.345 |
|
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