| Year |
Citation |
Score |
| 2020 |
Suh T, Yang Y, Zhao P, Lao KU, Ko HY, Wong J, DiStasio RA, Engstrom JR. Competitive Adsorption as a Route to Area-Selective Deposition. Acs Applied Materials & Interfaces. PMID 32043857 DOI: 10.1021/acsami.9b22065 |
0.701 |
|
| 2020 |
Coffey BM, Nallan HC, Engstrom JR, Lam CH, Ekerdt JG. Vacuum Ultraviolet-Enhanced OxidationA Routeto the Atomic Layer Etching of Palladium Metal Chemistry of Materials. 32: 6035-6042. DOI: 10.1021/Acs.Chemmater.0C01379 |
0.326 |
|
| 2017 |
Engstrom JR, Kummel AC. Preface: Special Topic on Atomic and Molecular Layer Processing: Deposition, Patterning, and Etching. The Journal of Chemical Physics. 146: 052501. PMID 28178820 DOI: 10.1063/1.4975141 |
0.443 |
|
| 2017 |
Nahm RK, Engstrom JR. Who's on first? Tracking in real time the growth of multiple crystalline phases of an organic semiconductor: Tetracene on SiO2. The Journal of Chemical Physics. 146: 052815. PMID 28178818 DOI: 10.1063/1.4971288 |
0.802 |
|
| 2017 |
Chen J, Zhang W, Nahm RK, DiFeo MA, Engstrom JR. Design and characterization of a microreactor for spatially confined atomic layer deposition and in situ UHV surface analysis Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 35: 061604. DOI: 10.1116/1.4996553 |
0.813 |
|
| 2017 |
Nahm RK, Bullen HJ, Suh T, Engstrom JR. Faster Is Smoother and So Is Lower Temperature: The Curious Case of Thin Film Growth of Tetracene on SiO2 The Journal of Physical Chemistry C. 121: 8464-8472. DOI: 10.1021/Acs.Jpcc.7B01369 |
0.818 |
|
| 2016 |
Zhang H, Yang J, Chen JR, Engstrom JR, Hanrath T, Wise FW. Tuning of Coupling and Surface Quality of PbS Nanocrystals via a Combined Ammonium Sulfide and Iodine Treatment. The Journal of Physical Chemistry Letters. PMID 26807665 DOI: 10.1021/Acs.Jpclett.5B02813 |
0.673 |
|
| 2016 |
Zhang W, Engstrom JR. Effect of substrate composition on atomic layer deposition using self-assembled monolayers as blocking layers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4931722 |
0.512 |
|
| 2016 |
Kish ER, Nahm RK, Woll AR, Engstrom JR. When the Sequence of Thin Film Deposition Matters: Examination of Organic-on-Organic Heterostructure Formation Using Molecular Beam Techniques and in Situ Real Time X-ray Synchrotron Radiation Journal of Physical Chemistry C. 120: 6165-6179. DOI: 10.1021/Acs.Jpcc.6B01717 |
0.838 |
|
| 2016 |
Nahm RK, Engstrom JR. Unexpected Effects of the Rate of Deposition on the Mode of Growth and Morphology of Thin Films of Tetracene Grown on SiO2 Journal of Physical Chemistry C. 120: 7183-7191. DOI: 10.1021/Acs.Jpcc.6B00963 |
0.819 |
|
| 2015 |
Kish ER, Desai TV, Greer DR, Woll AR, Engstrom JR. Nucleation of diindenoperylene and pentacene at thermal and hyperthermal incident kinetic energies Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4916885 |
0.445 |
|
| 2013 |
Zhang W, Nahm RK, Ma PF, Engstrom JR. Probing ultrathin film continuity and interface abruptness with x-ray photoelectron spectroscopy and low-energy ion scattering Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4812695 |
0.82 |
|
| 2012 |
Hughes KJ, Engstrom JR. Nucleation delay in atomic layer deposition on a thin organic layer and the role of reaction thermochemistry Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3625564 |
0.667 |
|
| 2012 |
Hughes KJ, Dube A, Sharma M, Engstrom JR. Initial stages of atomic layer deposition of tantalum nitride on SiO 2 and porous low-κ substrates modified by a branched interfacial organic layer: Chemisorption and the transition to steady-state growth Journal of Physical Chemistry C. 116: 21948-21960. DOI: 10.1021/Jp3086232 |
0.758 |
|
| 2012 |
Desai TV, Woll AR, Engstrom JR. Thin film growth of pentacene on polymeric dielectrics: Unexpected changes in the evolution of surface morphology with substrate Journal of Physical Chemistry C. 116: 12541-12552. DOI: 10.1021/Jp300635U |
0.54 |
|
| 2011 |
Desai TV, Hong S, Woll AR, Hughes KJ, Kaushik AP, Clancy P, Engstrom JR. Hyperthermal organic thin film growth on surfaces terminated with self-assembled monolayers. I. The dynamics of trapping. The Journal of Chemical Physics. 134: 224702. PMID 21682528 DOI: 10.1063/1.3591965 |
0.841 |
|
| 2011 |
Choi JJ, Bealing CR, Bian K, Hughes KJ, Zhang W, Smilgies DM, Hennig RG, Engstrom JR, Hanrath T. Controlling nanocrystal superlattice symmetry and shape-anisotropic interactions through variable ligand surface coverage. Journal of the American Chemical Society. 133: 3131-8. PMID 21306161 DOI: 10.1021/Ja110454B |
0.647 |
|
| 2011 |
Shaw J, Zhong YW, Hughes KJ, Hou TH, Raza H, Rajwade S, Bellfy J, Engstrom JR, Abruña HD, Kan EC. Integration of self-assembled redox molecules in flash memory devices Ieee Transactions On Electron Devices. 58: 826-834. DOI: 10.1109/Ted.2010.2097266 |
0.513 |
|
| 2011 |
Woll AR, Desai TV, Engstrom JR. Quantitative modeling of in situ x-ray reflectivity during organic molecule thin film growth Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075479 |
0.497 |
|
| 2011 |
Desai TV, Kish ER, Woll AR, Engstrom JR. Hyperthermal growth of N, N′ -ditridecylperylene-3,4,9,10- tetracarboxylic diimide on self-assembled monolayers: Adsorption dynamics and sub- and multilayer thin film growth Journal of Physical Chemistry C. 115: 18221-18234. DOI: 10.1021/Jp204495U |
0.496 |
|
| 2010 |
Hughes KJ, Engstrom JR. Interfacial organic layers: Tailored surface chemistry for nucleation and growth Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 1033-1059. DOI: 10.1116/1.3480920 |
0.558 |
|
| 2010 |
Xin HL, Ercius P, Hughes KJ, Engstrom JR, Muller DA. Three-dimensional imaging of pore structures inside low-κ dielectrics Applied Physics Letters. 96. DOI: 10.1063/1.3442496 |
0.522 |
|
| 2010 |
Desai TV, Woll AR, Schreiber F, Engstrom JR. Nucleation and growth of perfluoropentacene on self-assembled monolayers: Significant changes in island density and shape with surface termination Journal of Physical Chemistry C. 114: 20120-20129. DOI: 10.1021/Jp107518F |
0.493 |
|
| 2009 |
Amassian A, Desai TV, Kowarik S, Hong S, Woll AR, Malliaras GG, Schreiber F, Engstrom JR. Coverage dependent adsorption dynamics in hyperthermal organic thin film growth Journal of Chemical Physics. 130. PMID 19334866 DOI: 10.1063/1.3088835 |
0.827 |
|
| 2009 |
Amassian A, Pozdin VA, Desai TV, Hong S, Woll AR, Ferguson JD, Brock JD, Malliaras GG, Engstrom JR. Post-deposition reorganization of pentacene films deposited on low-energy surfaces Journal of Materials Chemistry. 19: 5580-5592. DOI: 10.1039/B907947E |
0.541 |
|
| 2009 |
Goose JE, Killampalli A, Clancy P, Engstrom JR. Molecular-scale events in hyperthermal deposition of organic semiconductors implicated from experiment and molecular simulation Journal of Physical Chemistry C. 113: 6068-6073. DOI: 10.1021/Jp807207V |
0.826 |
|
| 2009 |
Papadimitratos A, Amassian A, Killampalli AS, MacK JL, Malliaras GG, Engstrom JR. Organic thin-film transistors of pentacene films fabricated from a supersonic molecular beam source Applied Physics a: Materials Science and Processing. 95: 29-35. DOI: 10.1007/S00339-008-5025-X |
0.828 |
|
| 2008 |
Sharma M, Komiyama M, Engstrom JR. Observation from scanning tunneling microscopy of a striped phase for octanethiol adsorbed on Au(111) from solution. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 9937-40. PMID 18707143 DOI: 10.1021/La800905E |
0.516 |
|
| 2008 |
Sharma M, Dube A, Hughes KJ, Engstrom JR. Gas-surface reactions between pentakis(dimethylamido)tantalum and surface grown hyperbranched polyglycidol films. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 8610-9. PMID 18636717 DOI: 10.1021/La800790U |
0.799 |
|
| 2008 |
Hong S, Amassian A, Woll AR, Bhargava S, Ferguson JD, Malliaras GG, Brock JD, Engstrom JR. Real time monitoring of pentacene growth on Si O2 from a supersonic source Applied Physics Letters. 92. DOI: 10.1063/1.2946497 |
0.536 |
|
| 2007 |
Sharma M, Dube A, Engstrom JR. Growth of first generation dendrons on SiO2: controlling chemisorption of transition metal coordination complexes. Journal of the American Chemical Society. 129: 15022-33. PMID 17997558 DOI: 10.1021/Ja0752944 |
0.704 |
|
| 2007 |
Dube A, Sharma M, Ma PF, Ercius PA, Muller DA, Engstrom JR. Effects of interfacial organic layers on nucleation, growth, and morphological evolution in atomic layer thin film deposition Journal of Physical Chemistry C. 111: 11045-11058. DOI: 10.1021/Jp072264E |
0.791 |
|
| 2006 |
Ma PF, Dube A, Killampalli AS, Engstrom JR. A supersonic molecular beam study of the reaction of tetrakis(dimethylamido)titanium with self-assembled alkyltrichlorosilane monolayers. The Journal of Chemical Physics. 125: 34706. PMID 16863372 DOI: 10.1063/1.2220562 |
0.791 |
|
| 2006 |
Haran M, Engstrom JR, Clancy P. Ab initio calculations of the reaction mechanisms for metal-nitride deposition from organo-metallic precursors onto functionalized self-assembled monolayers. Journal of the American Chemical Society. 128: 836-47. PMID 16417373 DOI: 10.1021/Ja054685K |
0.303 |
|
| 2006 |
Dube A, Sharma M, Ma PF, Engstrom JR. Effects of interfacial organic layers on thin film nucleation in atomic layer deposition Applied Physics Letters. 89. DOI: 10.1063/1.2360902 |
0.791 |
|
| 2006 |
Killampalli AS, Engstrom JR. Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane Applied Physics Letters. 88. DOI: 10.1063/1.2182012 |
0.838 |
|
| 2005 |
Dube A, Chadeayne AR, Sharma M, Wolczanski PT, Engstrom JR. Covalent attachment of a transition metal coordination complex to functionalized oligo(phenylene-ethynylene) self-assembled monolayers. Journal of the American Chemical Society. 127: 14299-309. PMID 16218624 DOI: 10.1021/Ja054378E |
0.703 |
|
| 2005 |
Diao J, Ren D, Engstrom JR, Lee KH. A surface modification strategy on silicon nitride for developing biosensors. Analytical Biochemistry. 343: 322-8. PMID 15993368 DOI: 10.1016/J.Ab.2005.05.010 |
0.339 |
|
| 2005 |
Killampalli AS, Ma PF, Engstrom JR. The reaction of tetrakis(dimethylamido)titanium with self-assembled alkyltrichlorosilane monolayers possessing -OH, -NH2, and -CH3 terminal groups. Journal of the American Chemical Society. 127: 6300-10. PMID 15853337 DOI: 10.1021/Ja047922C |
0.789 |
|
| 2005 |
Killampalli AS, Schroeder TW, Engstrom JR. Nucleation of pentacene on silicon dioxide at hyperthermal energies Applied Physics Letters. 87. DOI: 10.1063/1.1990254 |
0.789 |
|
| 2004 |
Schroeder TW, Lam AM, Ma PF, Engstrom JR. Effects of atomic hydrogen on the selective area growth of Si and Si 1-xGe x thin films on Si and SiO 2 surfaces: Inhibition, nucleation, and growth Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 578-593. DOI: 10.1116/1.1699336 |
0.825 |
|
| 2004 |
Schroeder TW, Engstrom JR. The nucleation and growth of silicon thin films on silicate glasses of variable composition using supersonic gas source molecular beam deposition Journal of Applied Physics. 95: 6470-6479. DOI: 10.1063/1.1728287 |
0.803 |
|
| 2004 |
Cypes SH, Engstrom JR. Analysis of a toluene stripping process: A comparison between a microfabricated stripping column and a conventional packed tower Chemical Engineering Journal. 101: 49-56. DOI: 10.1016/J.Cej.2003.10.014 |
0.305 |
|
| 2002 |
Ma PF, Schroeder TW, Engstrom JR. Nucleation of copper on TiN and SiO2 from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane Applied Physics Letters. 80: 2604-2606. DOI: 10.1063/1.1469687 |
0.819 |
|
| 2001 |
Schroeder TW, Ma PF, Lam AM, Zheng YJ, Engstrom JR. Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation Applied Physics Letters. 79: 2181-2183. DOI: 10.1063/1.1408271 |
0.816 |
|
| 2001 |
Zheng YJ, Ma PF, Engstrom JR. Etching by atomic hydrogen of Ge overlayers on Si(100) Journal of Applied Physics. 90: 3614-3622. DOI: 10.1063/1.1394898 |
0.689 |
|
| 2001 |
Lee D, Blakely JM, Schroeder TW, Engstrom JR. A growth method for creating arrays of atomically flat mesas on silicon Applied Physics Letters. 78: 1349-1351. DOI: 10.1063/1.1352656 |
0.802 |
|
| 2000 |
Lee D, Schroeder T, Engstrom J, Blakely J. A Growth Technique to Make Extensive Atomically Flat Silicon Surfaces Mrs Proceedings. 648. DOI: 10.1557/Proc-648-P10.11 |
0.79 |
|
| 2000 |
Zheng YJ, Engstrom JR, Zhang J, Schellinger A, Joyce BA. The effect of coincident atomic hydrogen on the gas-source molecular beam epitaxial growth of silicon from disilane Surface Science. 470: 131-140. DOI: 10.1016/S0039-6028(00)00848-7 |
0.469 |
|
| 2000 |
Engstrom JR, Weinberg WH. Combinatorial materials science: Paradigm shift in materials discovery and optimization Aiche Journal. 46: 2-5. |
0.312 |
|
| 1999 |
Chen G, Boyd ID, Engstrom JR. Three dimensional modeling of silicon deposition process scale-up employing supersonic jets. II Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 978-985. DOI: 10.1116/1.581673 |
0.483 |
|
| 1999 |
Zheng YJ, Lam AM, Engstrom JR. Modeling of Ge surface segregation in vapor-phase deposited Si1 - xGex thin films Applied Physics Letters. 75: 817-819. DOI: 10.1063/1.124523 |
0.69 |
|
| 1999 |
Roadman SE, Levine SW, Zheng YJ, Clancy P, Engstrom JR. Pattern formation and shadow instability in collimated energetic molecular beam growth of silicon Applied Physics Letters. 74: 25-27. DOI: 10.1063/1.123121 |
0.838 |
|
| 1998 |
Roadman SE, Maity N, Carter JN, Engstrom JR. Study of thin film deposition processes employing variable kinetic energy, highly collimated neutral molecular beams Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 3423-3433. DOI: 10.1116/1.581497 |
0.842 |
|
| 1998 |
Chen G, Boyd ID, Roadman SE, Engstrom JR. Monte Carlo analysis of a hyperthermal silicon deposition process Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 689-699. DOI: 10.1116/1.581089 |
0.826 |
|
| 1998 |
Lam AM, Zheng YJ, Engstrom JR. Direct in situ characterization of Ge surface segregation in strained Si1-xGex epitaxial thin films Applied Physics Letters. 73: 2027-2029. DOI: 10.1063/1.122357 |
0.531 |
|
| 1998 |
Zhang J, Lees AK, Schellinger A, Engstrom JR, Hsieh ML, Zettler JT, Taylor AG, Joyce BA. Kinetics and dynamics of Si GSMBE studied by reflectance anisotropy spectroscopy Surface Science. 402: 480-486. DOI: 10.1016/S0039-6028(98)00027-2 |
0.476 |
|
| 1998 |
Levine SW, Engstrom JR, Clancy P. A kinetic Monte Carlo study of the growth of Si on Si(100) at varying angles of incident deposition Surface Science. 401: 112-123. DOI: 10.1016/S0039-6028(97)00904-7 |
0.504 |
|
| 1998 |
Lam AM, Zheng YJ, Engstrom JR. The effect of strain on gas-surface reactivity in group-IV heteroepitaxial systems Chemical Physics Letters. 292: 229-234. DOI: 10.1016/S0009-2614(98)00668-X |
0.679 |
|
| 1997 |
Levine SW, Engstrom JR, Clancy P. 3-D Kinetic Monte Carlo study of the growth of Si thin films using beams with varying angle of incidence Materials Research Society Symposium - Proceedings. 440: 413-418. DOI: 10.1557/Proc-440-413 |
0.528 |
|
| 1997 |
Lam AM, Zheng YJ, Engstrom JR. Gas-surface reactivity in mixed-crystal systems: The reaction of GeH4 and Ge2H6 on Si surfaces Surface Science. 393: 205-221. DOI: 10.1016/S0039-6028(97)00587-6 |
0.693 |
|
| 1996 |
Jones ME, Roadman SE, Lam AM, Eres G, Engstrom JR. Supersonic molecular beam studies of the dissociative chemisorption of GeH4 and Ge2H6 on the Ge(100) and Ge(111) surfaces Journal of Chemical Physics. 105: 7140-7151. DOI: 10.1063/1.472516 |
0.818 |
|
| 1995 |
Xia LQ, Jones ME, Maity N, Roadman SE, Engstrom JR. Dissociative chemisorption at hyperthermal energies: benchmark studies in group IV systems Materials Research Society Symposium - Proceedings. 388: 221-226. DOI: 10.1557/Proc-388-221 |
0.83 |
|
| 1995 |
Xia LQ, Jones ME, Maitv N, Engstrom JR. Supersonic molecular beam scattering as a probe of thin film deposition processes Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 2651-2664. DOI: 10.1116/1.579464 |
0.55 |
|
| 1995 |
Xia LQ, Jones ME, Maity N, Engstrom JR. Dissociation and pyrolysis of Si2H6 on Si surfaces: The influence of surface structure and adlayer composition The Journal of Chemical Physics. 103: 1691-1701. DOI: 10.1063/1.469739 |
0.495 |
|
| 1995 |
Jones ME, Shealy JR, Engstrom JR. Thermal and plasma-assisted nitridation of GaAs(100) using NH3 Applied Physics Letters. 67: 542. DOI: 10.1063/1.115182 |
0.429 |
|
| 1995 |
Maity N, Xia LQ, Engstrom JR. Effect of PH3 on the dissociative chemisorption of SiH4 and Si2H6 on Si(100): Implications on the growth of in situ doped Si thin films Applied Physics Letters. 1909. DOI: 10.1063/1.113318 |
0.538 |
|
| 1995 |
Maity N, Xia LQ, Roadman SE, Engstrom JR. The adsorption of PH3 on the Si(111)-(7 × 7) surface: an example of autocatalytic dissociative chemisorption Surface Science. 344: L1201-L1206. DOI: 10.1016/0039-6028(95)01005-X |
0.807 |
|
| 1995 |
Maity N, Xia LQ, Roadman SE, Engstrom JR. A supersonic molecular beam study of the chemisorption of PH3 on the Si(100) surface Surface Science. 344: 203-220. DOI: 10.1016/0039-6028(95)00834-9 |
0.824 |
|
| 1994 |
Xia LQ, Engstrom JR. The role of surface corrugation in direct translationally activated dissociative adsorption The Journal of Chemical Physics. 101: 5329-5342. DOI: 10.1063/1.468424 |
0.387 |
|
| 1994 |
Jones ME, Xia LQ, Maity N, Engstrom JR. Translationally activated dissociative chemisorption of SiH4 on the Si(100) and Si(111) surfaces Chemical Physics Letters. 229: 401-407. DOI: 10.1016/0009-2614(94)01093-5 |
0.513 |
|
| 1993 |
Engstrom JR, Hansen DA, Furjanic MJ, Xia LQ. Dynamics of the dissociative adsorption of disilane on Si(100): Energy scaling and the effect of corrugation The Journal of Chemical Physics. 99: 4051-4054. DOI: 10.1063/1.466228 |
0.485 |
|
| 1993 |
Engstrom JR, Xia LQ, Furjanic MJ, Hansen DA. Dissociative adsorption of Si2H6 on silicon at hyperthermal energies: The influence of surface structure Applied Physics Letters. 63: 1821-1823. DOI: 10.1063/1.110674 |
0.507 |
|
| 1993 |
Hansen DA, Furjanic MJ, Xia LQ, Engstrom JR. Reactive scattering of Si2H6 from the Si(100) surface Materials Research Society Symposium Proceedings. 282: 549-554. |
0.338 |
|
| 1992 |
Hansen DA, Furjanic MJ, Xia L-, Engstrom JR. Reactive Scattering of Si 2 H 6 from the Si(100) Surface Mrs Proceedings. 282. DOI: 10.1557/Proc-282-549 |
0.386 |
|
| 1992 |
Engstrom JR, Bonser DJ, Engel T. The reaction of atomic oxygen with Si(100) and Si(111). II. Adsorption, passive oxidation and the effect of coincident ion bombardment Surface Science. 268: 238-264. DOI: 10.1016/0039-6028(92)90966-A |
0.449 |
|
| 1991 |
Engstrom JR, Bonser DJ, Nelson MM, Engel T. The reaction of atomic oxygen with Si(100) and Si(111). I. Oxide decomposition, active oxidation and the transition to passive oxidation Surface Science. 256: 317-343. DOI: 10.1016/0039-6028(91)90875-S |
0.459 |
|
| 1990 |
Engstrom JR, Engel T. Atomic versus molecular reactivity at the gas-solid interface: The adsorption and reaction of atomic oxygen on the Si(100) surface Physical Review B. 41: 1038-1041. DOI: 10.1103/Physrevb.41.1038 |
0.467 |
|
| 1990 |
Engstrom JR, Goodman DW, Weinberg WH. Reaction of cyclopropane, methylcyclopropane, and propylene with hydrogen on the (111) and (110)-(1 times 2) surfaces of iridium The Journal of Physical Chemistry. 94: 396-409. DOI: 10.1021/J100364A067 |
0.408 |
|
| 1990 |
Engstrom JR, Goodman DW, Weinberg WH. Reaction of cyclopropane, methylcyclopropane, and propylene with hydrogen on the (111) and (110)-(1X2) surfaces of iridium Journal of Physical Chemistry. 94: 396-409. |
0.456 |
|
| 1989 |
Engstrom JR, Nelson MM, Engel T. Reactive atom-surface scattering: The adsorption and reaction of atomic oxygen on the Si(100) surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 1837-1840. DOI: 10.1116/1.576011 |
0.475 |
|
| 1989 |
Engstrom JR, Bonser DJ, Engel T. Effect of coincident ion bombardment on the oxidation of Si (100) by atomic oxygen Applied Physics Letters. 55: 2202-2204. DOI: 10.1063/1.102352 |
0.325 |
|
| 1989 |
Engstrom JR, Nelson MM, Engel T. The adsorption and reaction of fluorine on the Si(100) surface Surface Science. 215: 437-500. DOI: 10.1016/0039-6028(89)90271-9 |
0.469 |
|
| 1988 |
Engstrom JR, Nelson MM, Engel T. Thermal decomposition of a silicon-fluoride adlayer: Evidence for spatially inhomogeneous removal of a single monolayer of the silicon substrate Physical Review B. 37: 6563-6566. DOI: 10.1103/Physrevb.37.6563 |
0.459 |
|
| 1988 |
Engstrom JR, Goodman DW, Weinberg WH. Hydrogenolysis of ethane, propane, n-butane, and neopentane on the (111) and (110)-(1 times 2) surfaces of iridium Journal of the American Chemical Society. 110: 8305-8319. DOI: 10.1021/Ja00233A005 |
0.396 |
|
| 1988 |
Engstrom JR, Weinberg WH. Analysis of gas-surface reactions by surface temperature modulation: Experimental applications to the adsorption and oxidation of carbon monoxide on the Pt(110)-(1 × 2) surface Surface Science. 201: 145-170. DOI: 10.1016/0039-6028(88)90603-6 |
0.481 |
|
| 1988 |
Engstrom JR, Goodman DW, Weinberg WH. Hydrogenolysis of ethane, propane, n-butane, and neopentane on the (111) and (110)-(1×2) surfaces of iridium Journal of the American Chemical Society. 110: 8305-8319. |
0.499 |
|
| 1987 |
Engstrom JR, Weinberg WH. Summary abstract: The oxidation of carbon monoxide on the Pt(110)-(1 x2) surface: The influence of the adlayer composition on the reaction dynamics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 640-642. DOI: 10.1116/1.574655 |
0.421 |
|
| 1987 |
Engstrom JR, Weinberg WH, Goodman DW. Summary Abstract: The hydrogenolysis of alkanes over single-crystalline surfaces of iridium: The influence of surface structure on the catalytic selectivity Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 825-827. DOI: 10.1116/1.574362 |
0.545 |
|
| 1987 |
Engstrom JR, Tsai W, Weinberg WH. The chemisorption of hydrogen on the (111) and (110)-(1 × 2) surfaces of iridium and platinum The Journal of Chemical Physics. 87: 3104-3119. DOI: 10.1063/1.453048 |
0.555 |
|
| 1987 |
Engstrom JR, Weinberg WH. Analysis of gas-surface reactions by surface temperature modulation: Theoretical formulation The Journal of Chemical Physics. 87: 4211-4222. DOI: 10.1063/1.452926 |
0.562 |
|
| 1986 |
Engstrom JR, Goodman DW, Weinberg WH. Hydrogenolysis of n-butane over the (111) and (110)-(1.times.2) surfaces of iridium: a direct correlation between catalytic selectivity and surface structure Journal of the American Chemical Society. 108: 4653-4655. DOI: 10.1021/Ja00275A068 |
0.312 |
|
| 1986 |
Engstrom JR, Goodman DW, Weinberg WH. Hydrogenolysis of n-butane over the (111) and (110)-(1×2) surfaces of indium: A direct correlation between catalytic selectivity and surface structure Journal of the American Chemical Society. 108: 4653-4655. |
0.453 |
|
| 1985 |
Engstrom JR, Weinberg WH. Surface reaction dynamics via temperature modulation: Applications to the oxidation of carbon monoxide on the Pt(110)-(1 x 2) surface. Physical Review Letters. 55: 2017-2020. PMID 10031988 |
0.46 |
|
| 1985 |
Szuromi PD, Engstrom JR, Wittrig TS, Weinberg WH. Summary Abstract: Comparative studies of alkane activation by low-index surfaces of iridium and platinum Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 1560-1561. DOI: 10.1116/1.573170 |
0.321 |
|
| 1984 |
Szuromi PD, Engstrom JR, Weinberg WH. The reaction of saturated and unsaturated hydrocarbons with the (110)-(1×2) and (111) surfaces of iridium The Journal of Chemical Physics. 80: 508-517. DOI: 10.1002/Chin.198415147 |
0.397 |
|
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