| Year |
Citation |
Score |
| 2023 |
Meng Y, Li X, Kang X, Li W, Wang W, Lai Z, Wang W, Quan Q, Bu X, Yip S, Xie P, Chen D, Li D, Wang F, Yeung CF, ... ... Ho JC, et al. Van der Waals nanomesh electronics on arbitrary surfaces. Nature Communications. 14: 2431. PMID 37105992 DOI: 10.1038/s41467-023-38090-8 |
0.315 |
|
| 2021 |
Shil SK, Wang F, Egbo KO, Lai Z, Wang Y, Wang Y, Zhao D, Tsang SW, Ho JC, Yu KM. Two-Step Chemical Vapor Deposition-Synthesized Lead-Free All-Inorganic CsSbBr Perovskite Microplates for Optoelectronic Applications. Acs Applied Materials & Interfaces. PMID 34288658 DOI: 10.1021/acsami.1c07839 |
0.306 |
|
| 2020 |
Meng Y, Lai Z, Li F, Wang W, Yip S, Quan Q, Bu X, Wang F, Bao Y, Hosomi T, Takahashi T, Nagashima K, Yanagida T, Lu J, Ho JC. Perovskite Core-Shell Nanowire Transistors: Interfacial Transfer Doping and Surface Passivation. Acs Nano. PMID 32910641 DOI: 10.1021/acsnano.0c03101 |
0.316 |
|
| 2020 |
Lai Z, Dong R, Zhu Q, Meng Y, Wang F, Li F, Bu X, Kang X, Zhang H, Quan Q, Wang W, Wang F, Yip S, Ho JC. Bication Mediated Quasi-2D Halide Perovskites for High-Performance Flexible Photodetectors: From Ruddlesden-Popper Type to Dion-Jacobson Type. Acs Applied Materials & Interfaces. PMID 32805871 DOI: 10.1021/Acsami.0C09651 |
0.364 |
|
| 2020 |
Li F, Meng Y, Kang X, Yip S, Bu X, Zhang H, Ho JC. High-mobility In and Ga co-doped ZnO nanowires for high-performance transistors and ultraviolet photodetectors. Nanoscale. PMID 32700718 DOI: 10.1039/D0Nr03740K |
0.432 |
|
| 2020 |
Zhu X, Lin F, Zhang Z, Chen X, Huang H, Wang D, Tang J, Fang X, Fang D, Ho JC, Liao L, Wei Z. Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure. Nano Letters. PMID 32101689 DOI: 10.1021/Acs.Nanolett.0C00232 |
0.404 |
|
| 2020 |
Hou Y, Wang L, Zou X, Wan D, Liu C, Li G, Liu X, Liu Y, Jiang C, Ho JC, Liao L. Substantially Improving Device Performance of All-Inorganic Perovskite-Based Phototransistors via Indium Tin Oxide Nanowire Incorporation. Small (Weinheim An Der Bergstrasse, Germany). e1905609. PMID 31899596 DOI: 10.1002/Smll.201905609 |
0.416 |
|
| 2020 |
Bu X, Li Y, Ho JC. Efficient and stable electrocatalysts for water splitting Mrs Bulletin. 45: 531-538. DOI: 10.1557/Mrs.2020.170 |
0.333 |
|
| 2020 |
Zhang Z, Su M, Li G, Wang J, Zhang X, Ho JC, Wang C, Wan D, Liu X, Liao L. Stable Hysteresis-Free MoS 2 Transistors With Low-k/High-k Bilayer Gate Dielectrics Ieee Electron Device Letters. 41: 1036-1039. DOI: 10.1109/Led.2020.3000259 |
0.37 |
|
| 2020 |
Yip S, Li D, Li F, Wang W, Kang X, Meng Y, Zhang H, Lai Z, Wang F, Ho JC. Unusual phase-pure zinc blende and highly-crystalline As-rich InAs1−xSbx nanowires for high-mobility transistors Journal of Materials Chemistry C. DOI: 10.1039/D0Tc02715D |
0.445 |
|
| 2020 |
Gao W, Gou W, Wei R, Bu X, Ma Y, Ho JC. In situ electrochemical conversion of cobalt oxide@MOF-74 core-shell structure as an efficient and robust electrocatalyst for water oxidation Applied Materials Today. 21: 100820. DOI: 10.1016/J.Apmt.2020.100820 |
0.364 |
|
| 2020 |
Bu X, Liang X, Egbo KO, Li Z, Meng Y, Quan Q, Li YY, Yu KM, Wu CL, Ho JC. Morphology and strain control of hierarchical cobalt oxide nanowire electrocatalysts via solvent effect Nano Research. 13: 3130-3136. DOI: 10.1007/S12274-020-2983-6 |
0.344 |
|
| 2020 |
Fang M, Han D, Xu W, Shen Y, Lu Y, Cao P, Han S, Xu W, Zhu D, Liu W, Ho JC. Surface‐Guided Formation of Amorphous Mixed‐Metal Oxyhydroxides on Ultrathin MnO2 Nanosheet Arrays for Efficient Electrocatalytic Oxygen Evolution Advanced Energy Materials. 10: 2001059. DOI: 10.1002/Aenm.202001059 |
0.311 |
|
| 2020 |
Lan C, Li C, Ho JC, Liu Y. 2D WS2: From Vapor Phase Synthesis to Device Applications Advanced Electronic Materials. DOI: 10.1002/Aelm.202000688 |
0.307 |
|
| 2019 |
Wei S, Wang F, Zou X, Wang L, Liu C, Liu X, Hu W, Fan Z, Ho JC, Liao L. Flexible Quasi-2D Perovskite/IGZO Phototransistors for Ultrasensitive and Broadband Photodetection. Advanced Materials (Deerfield Beach, Fla.). e1907527. PMID 31867813 DOI: 10.1002/Adma.201907527 |
0.582 |
|
| 2019 |
Li F, Meng Y, Dong R, Yip S, Lan C, Kang X, Wang F, Chan KS, Ho JC. High-Performance Transparent Ultraviolet Photodetectors Based on InGaZnO Superlattice Nanowire Arrays. Acs Nano. PMID 31580641 DOI: 10.1021/Acsnano.9B06311 |
0.459 |
|
| 2019 |
Bu X, Chiang C, Wei R, Li Z, Meng Y, Peng C, Lin YC, Li Y, Lin YG, Chan KS, Ho JC. 2D Cobalt Phosphate Hydroxide Nanosheets: A New Type of High-Performance Electrocatalysts with Intrinsic CoO Lattice Distortion for Water Oxidation. Acs Applied Materials & Interfaces. PMID 31550123 DOI: 10.1021/Acsami.9B11594 |
0.338 |
|
| 2019 |
Lan C, Kang X, Wei R, Meng Y, Yip S, Zhang H, Ho JC. Utilizing NaOH promoter to achieve large single-domain monolayer WS films modified chemical vapor deposition. Acs Applied Materials & Interfaces. PMID 31462044 DOI: 10.1021/Acsami.9B12516 |
0.4 |
|
| 2019 |
Wei R, Bu X, Gao W, Villaos RAB, Macam G, Huang ZQ, Lan C, Chuang FC, Qu Y, Ho JC. Engineering Surface Structure of Spinel Oxides via High-valent Vanadium Doping for Remarkably Enhanced Electrocatalytic Oxygen Evolution Reaction. Acs Applied Materials & Interfaces. PMID 31414595 DOI: 10.1021/Acsami.9B10868 |
0.426 |
|
| 2019 |
Zelewski SJ, Zhou Z, Li F, Kang X, Meng Y, Ho JC, Kudrawiec R. Optical Properties of InGaO Nanowires Revealed by Photoacoustic Spectroscopy. Acs Applied Materials & Interfaces. PMID 31075196 DOI: 10.1021/Acsami.9B00756 |
0.417 |
|
| 2019 |
Meng Y, Lan C, Li F, Yip S, Wei R, Kang X, Bu X, Dong R, Zhang H, Ho JC. Direct Vapor-Liquid-Solid Synthesis of All-Inorganic Perovskite Nanowires for High-Performance Electronics and Optoelectronics. Acs Nano. PMID 31067402 DOI: 10.1021/acsnano.9b02379 |
0.325 |
|
| 2019 |
Li D, Lan C, Manikandan A, Yip S, Zhou Z, Liang X, Shu L, Chueh YL, Han N, Ho JC. Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires. Nature Communications. 10: 1664. PMID 30971702 DOI: 10.1038/S41467-019-09606-Y |
0.447 |
|
| 2019 |
Wang L, Zou X, Lin J, Jiang J, Liu Y, Liu X, Zhao X, Liu YF, Ho JC, Liao L. Perovskite/Black Phosphorus/MoS2 Photogate Reversed Photodiodes with Ultrahigh Light On/Off Ratio and Fast Response. Acs Nano. PMID 30938515 DOI: 10.1021/Acsnano.9B01713 |
0.373 |
|
| 2019 |
Yip SP, Shen L, Ho J. Recent advances in III-Sb nanowires: from synthesis to applications. Nanotechnology. PMID 30625448 DOI: 10.1088/1361-6528/Aafcce |
0.424 |
|
| 2019 |
Yip S, Shen L, Ho JC. Recent advances in flexible photodetectors based on 1D nanostructures Journal of Semiconductors. 40: 111602. DOI: 10.1088/1674-4926/40/11/111602 |
0.435 |
|
| 2019 |
Fan Z, Ho JC, Wang C, Long Y, Liu H. Preface to the Special Issue on Flexible and Wearable Sensors for Robotics and Health Journal of Semiconductors. 40: 110101. DOI: 10.1088/1674-4926/40/11/110101 |
0.462 |
|
| 2019 |
Cai Z, Bu X, Wang P, Su W, Wei R, Ho JC, Yang J, Wang X. Simple and cost effective fabrication of 3D porous core-shell Ni nanochains@NiFe layered double hydroxide nanosheet bifunctional electrocatalysts for overall water splitting Journal of Materials Chemistry. 7: 21722-21729. DOI: 10.1039/C9Ta07282A |
0.352 |
|
| 2019 |
Bu X, Wei R, Gao W, Lan C, Ho JC. A unique sandwich structure of a CoMnP/Ni2P/NiFe electrocatalyst for highly efficient overall water splitting Journal of Materials Chemistry. 7: 12325-12332. DOI: 10.1039/C9Ta02551K |
0.358 |
|
| 2019 |
Zhou Z, Lan C, Wei R, Ho JC. Transparent metal-oxide nanowires and their applications in harsh electronics Journal of Materials Chemistry C. 7: 202-217. DOI: 10.1039/C8Tc04501A |
0.371 |
|
| 2019 |
Cai Z, Bu X, Wang P, Ho JC, Yang J, Wang X. Recent advances in layered double hydroxide electrocatalysts for the oxygen evolution reaction Journal of Materials Chemistry. 7: 5069-5089. DOI: 10.1039/C8Ta11273H |
0.338 |
|
| 2019 |
Lan C, Zhou Z, Wei R, Ho JC. Two-dimensional perovskite materials: From synthesis to energy-related applications Materials Today Energy. 11: 61-82. DOI: 10.1016/J.Mtener.2018.10.008 |
0.355 |
|
| 2019 |
Gao W, Wen D, Ho JC, Qu Y. Incorporation of rare earth elements with transition metal–based materials for electrocatalysis: a review for recent progress Materials Today Chemistry. 12: 266-281. DOI: 10.1016/J.Mtchem.2019.02.002 |
0.302 |
|
| 2019 |
Li F, Yip S, Dong R, Zhou Z, Lan C, Liang X, Li D, Meng Y, Kang X, Ho JC. Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors Nano Research. 12: 1796-1803. DOI: 10.1007/S12274-019-2434-4 |
0.431 |
|
| 2019 |
Liang X, Dong R, Ho JC. Self‐Assembly of Colloidal Spheres toward Fabrication of Hierarchical and Periodic Nanostructures for Technological Applications Advanced Materials and Technologies. 4: 1800541. DOI: 10.1002/Admt.201800541 |
0.32 |
|
| 2018 |
Su M, Zou X, Gong Y, Wang J, Liu Y, Ho JC, Liu X, Liao L. Sub-kT/q switching in InO nanowire negative capacitance field-effect transistors. Nanoscale. PMID 30298891 DOI: 10.1039/C8Nr06163G |
0.391 |
|
| 2018 |
Sun J, Yin Y, Han M, Yang ZX, Lan C, Liu L, Wang Y, Han N, Shen L, Wu X, Ho JC. Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit. Acs Nano. PMID 30285417 DOI: 10.1021/Acsnano.8B05947 |
0.419 |
|
| 2018 |
Chen YZ, You YT, Chen PJ, Li D, Su TY, Lee L, Shih YC, Chen CW, Chang CC, Wang YC, Hong CY, Wei TC, Ho JC, Wei KH, Shen CH, et al. Environmentally and Mechanically Stable Selenium 1D/2D Hybrid Structures for Broad-Range Photoresponse from Ultraviolet to Infrared Wavelengths. Acs Applied Materials & Interfaces. PMID 30107132 DOI: 10.1021/Acsami.8B11676 |
0.423 |
|
| 2018 |
Zheng D, Fang H, Long M, Wu F, Wang P, Gong F, Wu X, Ho JC, Liao L, Hu W. High-Performance Near-Infrared Photodetectors Based on p-type SnX (X=S, Se) Nanowires Grown via Chemical Vapor Deposition. Acs Nano. PMID 29928792 DOI: 10.1021/Acsnano.8B03291 |
0.439 |
|
| 2018 |
Dong R, Lan C, Xu X, Liang X, Hu X, Li D, Zhou Z, Shu L, Yip S, Li C, Tsang SW, Ho JC. A Novel Series of Quasi-2D Ruddlesden-Popper Perovskites Based on Short-Chained Spacer Cation for Enhanced Photodetection. Acs Applied Materials & Interfaces. PMID 29741083 DOI: 10.1021/Acsami.8B03517 |
0.362 |
|
| 2018 |
Yang ZX, Yin Y, Sun J, Bian L, Han N, Zhou Z, Shu L, Wang F, Chen Y, Song A, Ho JC. Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires. Scientific Reports. 8: 6928. PMID 29720609 DOI: 10.1038/S41598-018-25209-X |
0.416 |
|
| 2018 |
Wei R, Fang M, Dong G, Lan C, Shu L, Zhang H, Bu X, Ho JC. High-Index Faceted Porous Co3O4 Nanosheets with Oxygen Vacancy for Highly Efficient Water Oxidation. Acs Applied Materials & Interfaces. PMID 29406690 DOI: 10.1021/Acsami.7B18208 |
0.34 |
|
| 2018 |
Tiwari A, Novak T, Bu X, Ho J, Jeon S. Layered Ternary and Quaternary Transition Metal Chalcogenide Based Catalysts for Water Splitting Catalysts. 8: 551. DOI: 10.3390/Catal8110551 |
0.305 |
|
| 2018 |
Wang Z, Wang Y, Zhou X, Yang Z, Yin Y, Zhang J, Han N, Ho JC, Chen Y. Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier Crystal Growth & Design. 18: 4438-4444. DOI: 10.1021/Acs.Cgd.8B00409 |
0.392 |
|
| 2018 |
Ma Y, Gao W, Zhang Z, Zhang S, Tian Z, Liu Y, Ho JC, Qu Y. Regulating the surface of nanoceria and its applications in heterogeneous catalysis Surface Science Reports. 73: 1-36. DOI: 10.1016/J.Surfrep.2018.02.001 |
0.336 |
|
| 2018 |
Liang X, Cheng Y, Xu X, Dong R, Li D, Zhou Z, Wei R, Dong G, Tsang S, Ho JC. Enhanced performance of perovskite solar cells based on vertical TiO2 nanotube arrays with full filling of CH3NH3PbI3 Applied Surface Science. 451: 250-257. DOI: 10.1016/J.Apsusc.2018.04.245 |
0.417 |
|
| 2018 |
Zhou Z, Lan C, Yip S, Wei R, Li D, Shu L, Ho JC. Towards high-mobility In2xGa2–2xO3 nanowire field-effect transistors Nano Research. 11: 5935-5945. DOI: 10.1007/S12274-018-2106-9 |
0.436 |
|
| 2018 |
Lan C, Zhou Z, Zhou Z, Li C, Shu L, Shen L, Li D, Dong R, Yip S, Ho JC. Wafer-scale synthesis of monolayer WS2 for high-performance flexible photodetectors by enhanced chemical vapor deposition Nano Research. 11: 3371-3384. DOI: 10.1007/S12274-017-1941-4 |
0.441 |
|
| 2018 |
Zhang H, Meng Y, Song L, Luo L, Qin Y, Han N, Yang Z, Liu L, Ho JC, Wang F. High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks Nano Research. 11: 1227-1237. DOI: 10.1007/S12274-017-1735-8 |
0.399 |
|
| 2018 |
Wang F, Song L, Zhang H, Meng Y, Luo L, Xi Y, Liu L, Han N, Yang Z, Tang J, Shan F, Ho JC. Thin‐Film Transistors: ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages (Adv. Electron. Mater. 1/2018) Advanced Electronic Materials. 4: 1870007. DOI: 10.1002/Aelm.201870007 |
0.319 |
|
| 2018 |
Wang F, Song L, Zhang H, Meng Y, Luo L, Xi Y, Liu L, Han N, Yang Z, Tang J, Shan F, Ho JC. ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages Advanced Electronic Materials. 4: 1700336. DOI: 10.1002/Aelm.201700336 |
0.398 |
|
| 2017 |
Gao W, Gou W, Zhou X, Ho JC, Ma Y, Qu Y. Amine-modulated/engineered interfaces of NiMo electrocatalysts for improved hydrogen evolution reaction in alkaline solutions. Acs Applied Materials & Interfaces. PMID 29282973 DOI: 10.1021/Acsami.7B16125 |
0.408 |
|
| 2017 |
Gong F, Fang H, Wang P, Su M, Li Q, Ho JC, Chen X, Lu W, Liao L, Wang J, Hu W. Visible to near-infrared photodetectors based on MoS2 vertical Schottky junctions. Nanotechnology. 28: 484002. PMID 29119947 DOI: 10.1088/1361-6528/Aa9172 |
0.426 |
|
| 2017 |
Lan C, Dong R, Zhou Z, Shu L, Li D, Yip S, Ho JC. Large-Scale Synthesis of Freestanding Layer-Structured PbI2 and MAPbI3 Nanosheets for High-Performance Photodetection. Advanced Materials (Deerfield Beach, Fla.). PMID 28815755 DOI: 10.1002/Adma.201702759 |
0.407 |
|
| 2017 |
Vinzons LU, Shu L, Yip S, Wong CY, Chan LLH, Ho JC. Unraveling the Morphological Evolution and Etching Kinetics of Porous Silicon Nanowires During Metal-Assisted Chemical Etching. Nanoscale Research Letters. 12: 385. PMID 28582967 DOI: 10.1186/S11671-017-2156-Z |
0.406 |
|
| 2017 |
Yang ZX, Liu L, Yip S, Li D, Shen L, Zhou Z, Han N, Hung TF, Pun EY, Wu X, Song A, Ho JC. Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, <111>-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition. Acs Nano. PMID 28355076 DOI: 10.1021/Acsnano.7B01217 |
0.432 |
|
| 2017 |
Liang X, Zhang H, Li HW, Shu L, Cheung H, Li D, Yip S, Yang QD, Wong CY, Tsang SW, Ho JC. Enhanced Self-Assembly of Crystalline, Large-Area and Periodicity-Tunable TiO2 Nanotube Arrays on Various Substrates. Acs Applied Materials & Interfaces. PMID 28146628 DOI: 10.1021/Acsami.6B12474 |
0.452 |
|
| 2017 |
Shen L, Pun EYB, Ho JC. Recent developments in III–V semiconducting nanowires for high-performance photodetectors Materials Chemistry Frontiers. 1: 630-645. DOI: 10.1039/C6Qm00279J |
0.439 |
|
| 2017 |
Wei R, Zhou X, Zhou T, Hu J, Ho JC. Co3O4 Nanosheets with In-Plane Pores and Highly Active {112} Exposed Facets for High Performance Lithium Storage Journal of Physical Chemistry C. 121: 19002-19009. DOI: 10.1021/Acs.Jpcc.7B04799 |
0.341 |
|
| 2017 |
Gao W, Yan M, Cheung H, Xia Z, Zhou X, Qin Y, Wong C, Ho JC, Chang C, Qu Y. Modulating electronic structure of CoP electrocatalysts towards enhanced hydrogen evolution by Ce chemical doping in both acidic and basic media Nano Energy. 38: 290-296. DOI: 10.1016/J.Nanoen.2017.06.002 |
0.331 |
|
| 2017 |
Fang M, Dong G, Wei R, Ho JC. Hierarchical Nanostructures: Design for Sustainable Water Splitting Advanced Energy Materials. 7: 1700559. DOI: 10.1002/Aenm.201700559 |
0.322 |
|
| 2017 |
Wang F, Yip S, Dong G, Xiu F, Song L, Yang Z, Li D, Hung TF, Han N, Ho JC. Nanowire Transistors: Manipulating III–V Nanowire Transistor Performance via Surface Decoration of Metal‐Oxide Nanoparticles (Adv. Mater. Interfaces 12/2017) Advanced Materials Interfaces. 4. DOI: 10.1002/Admi.201770060 |
0.374 |
|
| 2017 |
Shen L, Yip S, Lan C, Shu L, Li D, Zhou Z, Wong C, Pun EYB, Ho JC. Enhanced Negative Photoconductivity in InAs Nanowire Phototransistors Surface-Modified with Molecular Monolayers Advanced Materials Interfaces. 5: 1701104. DOI: 10.1002/Admi.201701104 |
0.338 |
|
| 2017 |
Wang F, Yip S, Dong G, Xiu F, Song L, Yang Z, Li D, Hung TF, Han N, Ho JC. Manipulating III–V Nanowire Transistor Performance via Surface Decoration of Metal‐Oxide Nanoparticles Advanced Materials Interfaces. 4: 1700260. DOI: 10.1002/Admi.201700260 |
0.429 |
|
| 2017 |
Yang Z, Liu X, Zou X, Wang J, Ma C, Jiang C, Ho JC, Pan C, Xiao X, Xiong J, Liao L. Performance Limits of the Self‐Aligned Nanowire Top‐Gated MoS2 Transistors Advanced Functional Materials. 27: 1602250. DOI: 10.1002/Adfm.201602250 |
0.389 |
|
| 2016 |
Su M, Yang Z, Liao L, Zou X, Ho JC, Wang J, Wang J, Hu W, Xiao X, Jiang C, Liu C, Guo T. Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 3: 1600078. PMID 27711260 DOI: 10.1002/Advs.201600078 |
0.325 |
|
| 2016 |
Liang X, Shu L, Lin H, Fang M, Zhang H, Dong G, Yip S, Xiu F, Ho JC. Inverted Silicon Nanopencil Array Solar Cells with Enhanced Contact Structures. Scientific Reports. 6: 34139. PMID 27671709 DOI: 10.1038/Srep34139 |
0.438 |
|
| 2016 |
Wang F, Wang C, Wang Y, Zhang M, Han Z, Yip S, Shen L, Han N, Pun EY, Ho JC. Diameter Dependence of Planar Defects in InP Nanowires. Scientific Reports. 6: 32910. PMID 27616584 DOI: 10.1038/Srep32910 |
0.411 |
|
| 2016 |
Guo P, Xu J, Gong K, Shen X, Lu Y, Qiu Y, Xu J, Zou Z, Wang C, Yan H, Luo Y, Pan A, Zhang H, Ho JC, Yu K. On-Nanowire Axial Heterojunction Design for High-Performance Photodetectors. Acs Nano. PMID 27419468 DOI: 10.1021/Acsnano.6B03458 |
0.399 |
|
| 2016 |
Han N, Yang ZX, Wang F, Yip S, Li D, Hung TF, Chen Y, Ho JC. Crystal Orientation Controlled Photovoltaic Properties of Multi-Layer GaAs Nanowire Arrays. Acs Nano. PMID 27223050 DOI: 10.1021/Acsnano.6B02473 |
0.414 |
|
| 2016 |
Wang Y, Yang Z, Wu X, Han N, Liu H, Wang S, Li J, Tse W, Yip S, Chen Y, Ho JC. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method. Nanoscale Research Letters. 11: 191. PMID 27071678 DOI: 10.1186/S11671-016-1420-Y |
0.436 |
|
| 2016 |
Zou X, Huang CW, Wang L, Yin LJ, Li W, Wang J, Wu B, Liu Y, Yao Q, Jiang C, Wu WW, He L, Chen S, Ho JC, Liao L. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors. Advanced Materials (Deerfield Beach, Fla.). PMID 26762171 DOI: 10.1002/Adma.201505205 |
0.364 |
|
| 2016 |
Zheng D, Fang H, Wang P, Luo W, Gong F, Ho JC, Chen X, Lu W, Liao L, Wang J, Hu W. High-Performance Ferroelectric Polymer Side-Gated CdS Nanowire Ultraviolet Photodetectors Advanced Functional Materials. 26: 7690-7696. DOI: 10.1002/Adfm.201603152 |
0.355 |
|
| 2016 |
Gong F, Luo W, Wang J, Wang P, Fang H, Zheng D, Guo N, Luo M, Ho JC, Chen X, Lu W, Liao L, Hu W. High-Sensitivity Floating-Gate Phototransistors Based on WS2 and MoS2 Advanced Functional Materials. 26: 6084-6090. DOI: 10.1002/Adfm.201601346 |
0.414 |
|
| 2015 |
Shen LF, Yip S, Yang ZX, Fang M, Hung T, Pun EY, Ho JC. High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics. Scientific Reports. 5: 16871. PMID 26607169 DOI: 10.1038/srep16871 |
0.319 |
|
| 2015 |
Wang J, Li S, Zou X, Ho J, Liao L, Xiao X, Jiang C, Hu W, Wang J, Li J. Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation. Small (Weinheim An Der Bergstrasse, Germany). PMID 26426344 DOI: 10.1002/Smll.201501260 |
0.361 |
|
| 2015 |
Han N, Yang ZX, Wang F, Dong G, Yip S, Liang X, Hung TF, Chen Y, Ho JC. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics. Acs Applied Materials & Interfaces. PMID 26284305 DOI: 10.1021/acsami.5b06452 |
0.326 |
|
| 2015 |
Yang ZX, Yip S, Li D, Han N, Dong G, Liang X, Shu L, Hung TF, Mo X, Ho JC. Approaching the Hole Mobility Limit of GaSb Nanowires. Acs Nano. PMID 26279583 DOI: 10.1021/Acsnano.5B04152 |
0.437 |
|
| 2015 |
Cheung HY, Yip S, Han N, Dong G, Fang M, Yang ZX, Wang F, Lin H, Wong CY, Ho JC. Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers. Acs Nano. PMID 26083845 DOI: 10.1021/Acsnano.5B02745 |
0.437 |
|
| 2015 |
Zhang Z, Zou X, Xu L, Liao L, Liu W, Ho J, Xiao X, Jiang C, Li J. Hydrogen gas sensor based on metal oxide nanoparticles decorated graphene transistor. Nanoscale. 7: 10078-84. PMID 25978618 DOI: 10.1039/C5Nr01924A |
0.315 |
|
| 2015 |
Han N, Yang Z, Wang F, Yip S, Dong G, Liang X, Hung T, Chen Y, Ho JC. Modulating the morphology and electrical properties of GaAs nanowires via catalyst stabilization by oxygen. Acs Applied Materials & Interfaces. 7: 5591-7. PMID 25700210 DOI: 10.1021/Acsami.5B00666 |
0.439 |
|
| 2015 |
Miao J, Hu W, Guo N, Lu Z, Liu X, Liao L, Chen P, Jiang T, Wu S, Ho JC, Wang L, Chen X, Lu W. High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios. Small (Weinheim An Der Bergstrasse, Germany). 11: 936-42. PMID 25363206 DOI: 10.1002/Smll.201402312 |
0.317 |
|
| 2015 |
Wang J, Zou X, Xiao X, Xu L, Wang C, Jiang C, Ho JC, Wang T, Li J, Liao L. Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics. Small (Weinheim An Der Bergstrasse, Germany). 11: 208-13. PMID 25115804 DOI: 10.1002/Smll.201401872 |
0.301 |
|
| 2015 |
Miao J, Hu W, Guo N, Lu Z, Liu X, Liao L, Chen P, Jiang T, Wu S, Ho JC, Wang L, Chen X, Lu W. Photodetectors: High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios (Small 8/2015) Small. 11: 890-890. DOI: 10.1002/Smll.201570046 |
0.325 |
|
| 2014 |
Leung SF, Zhang Q, Xiu F, Yu D, Ho JC, Li D, Fan Z. Light Management with Nanostructures for Optoelectronic Devices. The Journal of Physical Chemistry Letters. 5: 1479-95. PMID 26269997 DOI: 10.1021/Jz500306F |
0.562 |
|
| 2014 |
Fang M, Lin H, Cheung HY, Xiu F, Shen L, Yip S, Pun EY, Wong CY, Ho JC. Polymer-confined colloidal monolayer: a reusable soft photomask for rapid wafer-scale nanopatterning. Acs Applied Materials & Interfaces. 6: 20837-41. PMID 25375239 DOI: 10.1021/Am505221G |
0.336 |
|
| 2014 |
Guo N, Hu W, Liao L, Yip S, Ho JC, Miao J, Zhang Z, Zou J, Jiang T, Wu S, Chen X, Lu W. Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature. Advanced Materials (Deerfield Beach, Fla.). 26: 8203-9. PMID 25352322 DOI: 10.1002/Adma.201403664 |
0.39 |
|
| 2014 |
Yang ZX, Han N, Fang M, Lin H, Cheung HY, Yip S, Wang EJ, Hung T, Wong CY, Ho JC. Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires. Nature Communications. 5: 5249. PMID 25319499 DOI: 10.1038/Ncomms6249 |
0.454 |
|
| 2014 |
Han N, Wang F, Yang Z, Yip S, Dong G, Lin H, Fang M, Hung T, Ho JC. Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition. Nanoscale Research Letters. 9: 347. PMID 25114641 DOI: 10.1186/1556-276X-9-347 |
0.418 |
|
| 2014 |
Zou X, Wang J, Chiu CH, Wu Y, Xiao X, Jiang C, Wu WW, Mai L, Chen T, Li J, Ho JC, Liao L. Interface engineering for high-performance top-gated MoS2 field-effect transistors. Advanced Materials (Deerfield Beach, Fla.). 26: 6255-61. PMID 25070646 DOI: 10.1002/Adma.201402008 |
0.366 |
|
| 2014 |
Zhang M, Wang F, Wang C, Wang Y, Yip S, Ho JC. Formation mechanisms for the dominant kinks with different angles in InP nanowires. Nanoscale Research Letters. 9: 211. PMID 24910572 DOI: 10.1186/1556-276X-9-211 |
0.384 |
|
| 2014 |
Miao J, Hu W, Guo N, Lu Z, Zou X, Liao L, Shi S, Chen P, Fan Z, Ho JC, Li TX, Chen XS, Lu W. Single InAs nanowire room-temperature near-infrared photodetectors. Acs Nano. 8: 3628-35. PMID 24592971 DOI: 10.1021/Nn500201G |
0.599 |
|
| 2014 |
Lin H, Xiu F, Fang M, Yip S, Cheung HY, Wang F, Han N, Chan KS, Wong CY, Ho JC. Rational design of inverted nanopencil arrays for cost-effective, broadband, and omnidirectional light harvesting. Acs Nano. 8: 3752-60. PMID 24579981 DOI: 10.1021/Nn500418X |
0.404 |
|
| 2014 |
Xiu F, Lin H, Fang M, Dong G, Yip S, Ho JC. Fabrication and enhanced light-trapping properties of three-dimensional silicon nanostructures for photovoltaic applications Pure and Applied Chemistry. 86: 557-573. DOI: 10.1515/Pac-2013-1119 |
0.388 |
|
| 2014 |
Fang M, Han N, Wang F, Yang Z, Yip S, Dong G, Hou JJ, Chueh Y, Ho JC. III–V Nanowires: Synthesis, Property Manipulations, and Device Applications Journal of Nanomaterials. 2014: 1-14. DOI: 10.1155/2014/702859 |
0.454 |
|
| 2014 |
Han N, Ho JC. Manipulating properties of nanowire transistors Spie Newsroom. DOI: 10.1117/2.1201402.005344 |
0.378 |
|
| 2014 |
Shi X, Dong G, Fang M, Wang F, Lin H, Yen WC, Chan KS, Chueh YL, Ho JC. Selective n-type doping in graphene via the aluminium nanoparticle decoration approach Journal of Materials Chemistry C. 2: 5417-5421. DOI: 10.1039/C4Tc00454J |
0.318 |
|
| 2014 |
Lin H, Fang M, Cheung HY, Xiu F, Yip SP, Wong CY, Ho JC. Hierarchical silicon nanostructured arrays via metal-assisted chemical etching Rsc Advances. 4: 50081-50085. DOI: 10.1039/C4Ra06172A |
0.425 |
|
| 2014 |
Cheung HY, Lin H, Xiu F, Wang F, Yip S, Ho JC, Wong CY. Mechanistic characteristics of metal-assisted chemical etching in GaAs Journal of Physical Chemistry C. 118: 6903-6908. DOI: 10.1021/Jp500968P |
0.443 |
|
| 2014 |
Guo N, Hu W, Liao L, Yip S, Ho JC, Miao J, Zhang Z, Zou J, Jiang T, Wu S, Chen X, Lu W. Nanowires: Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature (Adv. Mater. 48/2014) Advanced Materials. 26: 8232-8232. DOI: 10.1002/Adma.201470329 |
0.34 |
|
| 2013 |
Yang ZX, Wang F, Han N, Lin H, Cheung HY, Fang M, Yip S, Hung T, Wong CY, Ho JC. Crystalline GaSb nanowires synthesized on amorphous substrates: from the formation mechanism to p-channel transistor applications. Acs Applied Materials & Interfaces. 5: 10946-52. PMID 24107082 DOI: 10.1021/Am403161T |
0.448 |
|
| 2013 |
Yang ZX, Han N, Wang F, Cheung HY, Shi X, Yip S, Hung T, Lee MH, Wong CY, Ho JC. Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors. Nanoscale. 5: 9671-6. PMID 24056889 DOI: 10.1039/C3Nr03080F |
0.449 |
|
| 2013 |
Han N, Hou JJ, Wang F, Yip S, Yen YT, Yang ZX, Dong G, Hung T, Chueh YL, Ho JC. GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties. Acs Nano. 7: 9138-46. PMID 24016352 DOI: 10.1021/Nn403767J |
0.389 |
|
| 2013 |
Wang F, Yip S, Han N, Fok K, Lin H, Hou JJ, Dong G, Hung T, Chan KS, Ho JC. Surface roughness induced electron mobility degradation in InAs nanowires. Nanotechnology. 24: 375202. PMID 23965340 DOI: 10.1088/0957-4484/24/37/375202 |
0.385 |
|
| 2013 |
Zou X, Wang J, Liu X, Wang C, Jiang Y, Wang Y, Xiao X, Ho JC, Li J, Jiang C, Fang Y, Liu W, Liao L. Rational design of sub-parts per million specific gas sensors array based on metal nanoparticles decorated nanowire enhancement-mode transistors. Nano Letters. 13: 3287-92. PMID 23796312 DOI: 10.1021/Nl401498T |
0.355 |
|
| 2013 |
Han N, Wang F, Hou JJ, Yip SP, Lin H, Xiu F, Fang M, Yang Z, Shi X, Dong G, Hung TF, Ho JC. Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors. Advanced Materials (Deerfield Beach, Fla.). 25: 4445-51. PMID 23784849 DOI: 10.1002/Adma.201301362 |
0.339 |
|
| 2013 |
Chen SY, Wang CY, Ford AC, Chou JC, Wang YC, Wang FY, Ho JC, Wang HC, Javey A, Gan JY, Chen LJ, Chueh YL. Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors. Physical Chemistry Chemical Physics : Pccp. 15: 2654-9. PMID 23340577 DOI: 10.1039/C2Cp44213B |
0.574 |
|
| 2013 |
Zou X, Liu X, Wang C, Jiang Y, Wang Y, Xiao X, Ho JC, Li J, Jiang C, Xiong Q, Liao L. Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors. Acs Nano. 7: 804-10. PMID 23228028 DOI: 10.1021/Nn305289W |
0.386 |
|
| 2013 |
Wahl RE, Wang F, Chung HE, Kunnen GR, Yip S, Lee EH, Pun EYB, Raupp GB, Allee DR, Ho JC. Stability and low-frequency noise in InAs NW parallel-array thin-film transistors Ieee Electron Device Letters. 34: 765-767. DOI: 10.1109/Led.2013.2250896 |
0.323 |
|
| 2013 |
Hou JJ, Wang F, Han N, Zhu H, Fok K, Lam W, Yip S, Hung T, Lee JE, Ho JC. Diameter dependence of electron mobility in InGaAs nanowires Applied Physics Letters. 102: 093112. DOI: 10.1063/1.4794414 |
0.426 |
|
| 2013 |
Lin H, Cheung HY, Xiu F, Wang F, Yip S, Han N, Hung T, Zhou J, Ho JC, Wong CY. Developing controllable anisotropic wet etching to achieve silicon nanorods, nanopencils and nanocones for efficient photon trapping Journal of Materials Chemistry A. 1: 9942-9946. DOI: 10.1039/C3Ta11889D |
0.42 |
|
| 2013 |
Fan Z, Ho JC, Huang B. One-Dimensional Nanostructures for Energy Harvesting One-Dimensional Nanostructures: Principles and Applications. 237-270. DOI: 10.1002/9781118310342.ch11 |
0.42 |
|
| 2012 |
Han N, Hou JJ, Wang F, Yip S, Lin H, Fang M, Xiu F, Shi X, Hung T, Ho JC. Large-scale and uniform preparation of pure-phase wurtzite GaAs NWs on non-crystalline substrates. Nanoscale Research Letters. 7: 632. PMID 23171521 DOI: 10.1186/1556-276X-7-632 |
0.431 |
|
| 2012 |
Hou JJ, Wang F, Han N, Xiu F, Yip S, Fang M, Lin H, Hung TF, Ho JC. Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires. Acs Nano. 6: 9320-5. PMID 23020254 DOI: 10.1021/Nn304174G |
0.427 |
|
| 2012 |
Han N, Wang F, Hou JJ, Xiu F, Yip S, Hui AT, Hung T, Ho JC. Controllable p-n switching behaviors of GaAs nanowires via an interface effect. Acs Nano. 6: 4428-33. PMID 22519669 DOI: 10.1021/Nn3011416 |
0.445 |
|
| 2012 |
Hou JJ, Han N, Wang F, Xiu F, Yip S, Hui AT, Hung T, Ho JC. Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices. Acs Nano. 6: 3624-30. PMID 22443352 DOI: 10.1021/Nn300966J |
0.488 |
|
| 2012 |
Han N, Wang F, Yip S, Hou JJ, Xiu F, Shi X, Hui AT, Hung T, Ho JC. GaAs nanowire Schottky barrier photovoltaics utilizing Au-Ga alloy catalytic tips Applied Physics Letters. 101. DOI: 10.1063/1.4727907 |
0.434 |
|
| 2012 |
Hui AT, Wang F, Han N, Yip S, Xiu F, Hou JJ, Yen YT, Hung T, Chueh YL, Ho JC. High-performance indium phosphide nanowires synthesized on amorphous substrates: From formation mechanism to optical and electrical transport measurements Journal of Materials Chemistry. 22: 10704-10708. DOI: 10.1039/C2Jm31232H |
0.461 |
|
| 2012 |
Han N, Wang F, Hou JJ, Yip S, Lin H, Fang M, Xiu F, Shi X, Hung T, Ho JC. Manipulated growth of GaAs nanowires: Controllable crystal quality and growth orientations via a supersaturation-controlled engineering process Crystal Growth and Design. 12: 6243-6249. DOI: 10.1021/Cg301452D |
0.341 |
|
| 2012 |
Hu P, Han N, Zhang D, Ho JC, Chen Y. Highly formaldehyde-sensitive, transition-metal doped ZnO nanorods prepared by plasma-enhanced chemical vapor deposition Sensors and Actuators B: Chemical. 169: 74-80. DOI: 10.1016/J.Snb.2012.03.035 |
0.343 |
|
| 2011 |
Liu CH, Chen SY, Chen CY, He JH, Chen LJ, Ho JC, Chueh YL. Kinetic growth of self-formed In2O3 nanodots via phase segregation: Ni/InAs system. Acs Nano. 5: 6637-42. PMID 21780832 DOI: 10.1021/Nn202109U |
0.319 |
|
| 2011 |
Wang FY, Yang QD, Xu G, Lei NY, Tsang YK, Wong NB, Ho JC. Highly active and enhanced photocatalytic silicon nanowire arrays. Nanoscale. 3: 3269-76. PMID 21717011 DOI: 10.1039/C1Nr10266D |
0.381 |
|
| 2011 |
Han N, Wang F, Hui AT, Hou JJ, Shan G, Xiu F, Hung T, Ho JC. Facile synthesis and growth mechanism of Ni-catalyzed GaAs nanowires on non-crystalline substrates. Nanotechnology. 22: 285607. PMID 21654028 DOI: 10.1088/0957-4484/22/28/285607 |
0.435 |
|
| 2011 |
Fan Z, Ho JC. Self-assembly of one-dimensional nanomaterials for cost-effective photovoltaics International Journal of Nanoparticles. 4: 164-183. DOI: 10.1504/Ijnp.2011.040507 |
0.525 |
|
| 2011 |
Han N, Hui AT, Wang F, Hou JJ, Xiu F, Hung T, Ho JC. Crystal phase and growth orientation dependence of GaAs nanowires on NixGay seeds via vapor-solid-solid mechanism Applied Physics Letters. 99. DOI: 10.1063/1.3630006 |
0.339 |
|
| 2010 |
Takei K, Takahashi T, Ho JC, Ko H, Gillies AG, Leu PW, Fearing RS, Javey A. Nanowire active-matrix circuitry for low-voltage macroscale artificial skin. Nature Materials. 9: 821-6. PMID 20835235 DOI: 10.1038/Nmat2835 |
0.786 |
|
| 2010 |
Chueh YL, Boswell CN, Yuan CW, Shin SJ, Takei K, Ho JC, Ko H, Fan Z, Haller EE, Chrzan DC, Javey A. Nanoscale structural engineering via phase segregation: Au-Ge system. Nano Letters. 10: 393-7. PMID 20050674 DOI: 10.1021/Nl902597M |
0.775 |
|
| 2010 |
Ford AC, Chuang S, Ho JC, Chueh YL, Fan Z, Javey A. Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn. Nano Letters. 10: 509-13. PMID 20044838 DOI: 10.1021/Nl903322S |
0.743 |
|
| 2010 |
Ko H, Zhang Z, Ho JC, Takei K, Kapadia R, Chueh YL, Cao W, Cruden BA, Javey A. Flexible carbon-nanofiber connectors with anisotropic adhesion properties. Small (Weinheim An Der Bergstrasse, Germany). 6: 22-6. PMID 19937609 DOI: 10.1002/Smll.200901867 |
0.762 |
|
| 2009 |
Fan Z, Razavi H, Do JW, Moriwaki A, Ergen O, Chueh YL, Leu PW, Ho JC, Takahashi T, Reichertz LA, Neale S, Yu K, Wu M, Ager JW, Javey A. Three-dimensional nanopillar-array photovoltaics on low-cost and flexible substrates. Nature Materials. 8: 648-53. PMID 19578336 DOI: 10.1038/Nmat2493 |
0.732 |
|
| 2009 |
Takahashi T, Takei K, Ho JC, Chueh YL, Fan Z, Javey A. Monolayer resist for patterned contact printing of aligned nanowire arrays. Journal of the American Chemical Society. 131: 2102-3. PMID 19173560 DOI: 10.1021/Ja8099954 |
0.723 |
|
| 2009 |
Ho JC, Yerushalmi R, Smith G, Majhi P, Bennett J, Halim J, Faifer VN, Javey A. Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing. Nano Letters. 9: 725-30. PMID 19161334 DOI: 10.1021/Nl8032526 |
0.575 |
|
| 2009 |
Ford AC, Ho JC, Chueh YL, Tseng YC, Fan Z, Guo J, Bokor J, Javey A. Diameter-dependent electron mobility of InAs nanowires. Nano Letters. 9: 360-5. PMID 19143505 DOI: 10.1021/Nl803154M |
0.673 |
|
| 2009 |
Ho JC, Ford AC, Chueh Y, Leu PW, Ergen O, Takei K, Smith G, Majhi P, Bennett J, Javey A. Nanoscale doping of InAs via sulfur monolayers Applied Physics Letters. 95: 072108. DOI: 10.1063/1.3205113 |
0.602 |
|
| 2009 |
Kapadia R, Ko H, Chueh Y, Ho JC, Takahashi T, Zhang Z, Javey A. Hybrid core-multishell nanowire forests for electrical connector applications Applied Physics Letters. 94: 263110. DOI: 10.1063/1.3148365 |
0.776 |
|
| 2009 |
Fan Z, Ho JC, Takahashi T, Yerushalmi R, Takei K, Ford AC, Chueh Y, Javey A. Toward the Development of Printable Nanowire Electronics and Sensors Advanced Materials. 21: 3730-3743. DOI: 10.1002/Adma.200900860 |
0.737 |
|
| 2009 |
Ko H, Zhang Z, Chueh Y, Ho JC, Lee J, Fearing RS, Javey A. Wet and Dry Adhesion Properties of Self-Selective Nanowire Connectors Advanced Functional Materials. 19: 3098-3102. DOI: 10.1002/Adfm.200901178 |
0.737 |
|
| 2008 |
Chueh YL, Ford AC, Ho JC, Jacobson ZA, Fan Z, Chen CY, Chou LJ, Javey A. Formation and characterization of NixInAs/InAs nanowire heterostructures by solid source reaction. Nano Letters. 8: 4528-33. PMID 19367855 DOI: 10.1021/Nl802681X |
0.674 |
|
| 2008 |
Fan Z, Ho JC, Jacobson ZA, Razavi H, Javey A. Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry. Proceedings of the National Academy of Sciences of the United States of America. 105: 11066-70. PMID 18685094 DOI: 10.1073/Pnas.0801994105 |
0.685 |
|
| 2008 |
Yerushalmi R, Ho JC, Fan Z, Javey A. Phosphine oxide monolayers on SiO2 surfaces. Angewandte Chemie (International Ed. in English). 47: 4440-2. PMID 18461577 DOI: 10.1002/Anie.200800737 |
0.607 |
|
| 2008 |
Ho JC, Yerushalmi R, Jacobson ZA, Fan Z, Alley RL, Javey A. Controlled nanoscale doping of semiconductors via molecular monolayers. Nature Materials. 7: 62-7. PMID 17994026 DOI: 10.1038/Nmat2058 |
0.686 |
|
| 2008 |
Fan Z, Ho JC, Jacobson ZA, Yerushalmi R, Alley RL, Razavi H, Javey A. Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing. Nano Letters. 8: 20-5. PMID 17696563 DOI: 10.1021/Nl071626R |
0.71 |
|
| 2008 |
Ford AC, Ho JC, Fan Z, Ergen O, Altoe V, Aloni S, Razavi H, Javey A. Synthesis, contact printing, and device characterization of Ni-catalyzed, crystalline InAs nanowires Nano Research. 1: 32-39. DOI: 10.1007/S12274-008-8009-4 |
0.721 |
|
| 2007 |
Yerushalmi R, Ho JC, Jacobson ZA, Javey A. Generic nanomaterial positioning by carrier and stationary phase design. Nano Letters. 7: 2764-8. PMID 17661524 DOI: 10.1021/Nl071271B |
0.53 |
|
| 2007 |
Yerushalmi R, Jacobson ZA, Ho JC, Fan Z, Javey A. Large scale, highly ordered assembly of nanowire parallel arrays by differential roll printing Applied Physics Letters. 91: 203104. DOI: 10.1063/1.2813618 |
0.671 |
|
| 2006 |
Specht P, Ho JC, Xu X, Armitage R, Weber ER, Erni E, Kisielowski C. Zincblende and wurtzite phases in InN epilayers and their respective band transitions Journal of Crystal Growth. 288: 225-229. DOI: 10.1016/J.Jcrysgro.2005.12.002 |
0.314 |
|
| 2005 |
Ho JC, Specht P, Yang Q, Xu X, Hao D, Weber ER. Effects of stoichiometry on electrical, optical, and structural properties of indium nitride Journal of Applied Physics. 98: 93712. DOI: 10.1063/1.2130514 |
0.303 |
|
| 2005 |
Xu X, Specht P, Armitage R, Ho JC, Weber ER, Kisielowski C. Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy Applied Physics Letters. 87: 92102. DOI: 10.1063/1.2035330 |
0.318 |
|
| 2004 |
Specht P, Armitage R, Ho J, Gunawan E, Yang Q, Xu X, Kisielowski C, Weber ER. The influence of structural properties on conductivity and luminescence of MBE grown InN Journal of Crystal Growth. 269: 111-118. DOI: 10.1016/J.Jcrysgro.2004.05.097 |
0.378 |
|
| 1990 |
Qian JJ, Wang YT, Ho J, Hsu CC. Atomic structure at the LaSi2−x/Si(100) interface Applied Physics Letters. 57: 43-45. DOI: 10.1063/1.104235 |
0.343 |
|
| Show low-probability matches. |