Year |
Citation |
Score |
2007 |
Dey S, Lee S, Joshi SV, Majhi P, Banerjee SK. Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate Mrs Proceedings. 995. DOI: 10.1557/Proc-0995-G05-16 |
0.637 |
|
2007 |
Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1098-1102. DOI: 10.1116/1.2713119 |
0.666 |
|
2007 |
Sarkar J, Dey S, Shahrjerdi D, Banerjee SK. Vertical flash memory cell with nanocrystal floating gate for ultradense integration and good retention Ieee Electron Device Letters. 28: 449-451. DOI: 10.1109/Led.2007.895445 |
0.607 |
|
2007 |
Joshi S, Dey S, Chaumont M, Campion A, Banerjee SK. Ultra-Thin Si1−x Ge x Dislocation Blocking Layers for Ge/Strained Si CMOS Devices Journal of Electronic Materials. 36: 641-647. DOI: 10.1007/S11664-007-0137-1 |
0.62 |
|
2006 |
Liu Y, Dey S, Tang S, Kelly DQ, Sarkar J, Banerjee SK. Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier Ieee Transactions On Electron Devices. 53: 2598-2602. DOI: 10.1109/Ted.2006.882395 |
0.569 |
|
2006 |
Kelly DQ, Donnelly JP, Dey S, Joshi SV, Gutierrez DIG, Yacaman MJ, Banerjee SK. BC high-/spl kappa//metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates Ieee Electron Device Letters. 27: 265-268. DOI: 10.1109/Led.2006.870866 |
0.615 |
|
2006 |
Kelly DQ, Wiedmann I, Donnelly JP, Joshi SV, Dey S, Banerjee SK, Garcia-Gutierrez DI, José-Yacamán M. Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications Applied Physics Letters. 88: 152101. DOI: 10.1063/1.2195008 |
0.648 |
|
2006 |
Jayanarayanan SK, Dey S, Donnelly JP, Banerjee SK. A novel 50 nm vertical MOSFET with a dielectric pocket Solid-State Electronics. 50: 897-900. DOI: 10.1016/J.Sse.2006.04.003 |
0.664 |
|
2006 |
Dey S, Joshi S, Garcia-Gutierrez D, Chaumont M, Campion A, Jose-Yacaman M, Banerjee SK. Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors Journal of Electronic Materials. 35: 1607-1612. DOI: 10.1007/S11664-006-0205-Y |
0.596 |
|
2005 |
Dey S, Joshi S, Banerjee SK. Current-crowding effect in multiple cantilever channel MOSFET Solid-State Electronics. 49: 1248-1250. DOI: 10.1016/J.Sse.2005.04.011 |
0.556 |
|
2005 |
Kelly DQ, Dey S, Onsongo D, Banerjee SK. Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs Microelectronics Reliability. 45: 1033-1040. DOI: 10.1016/J.Microrel.2005.01.011 |
0.521 |
|
2004 |
Onsongo D, Kelly DQ, Dey S, Wise RL, Cleavelin CR, Banerjee SK. Improved hot-electron reliability in strained-Si nMOS Ieee Transactions On Electron Devices. 51: 2193-2199. DOI: 10.1109/Ted.2004.839871 |
0.512 |
|
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