Year |
Citation |
Score |
2018 |
Chen X, Chen C, Lee R. Fast Evaluation of the High-Frequency Channel Noise in Nanoscale MOSFETs Ieee Transactions On Electron Devices. 65: 1502-1509. DOI: 10.1109/Ted.2018.2808184 |
0.434 |
|
2017 |
Chen X, Chen C, Lee R, Chen DC, Wu DY. Direct Deembedding of Noise Factors for On-Wafer Noise Measurement Ieee Transactions On Microwave Theory and Techniques. 65: 916-922. DOI: 10.1109/Tmtt.2016.2627555 |
0.438 |
|
2015 |
Jeong E, Deen MJ, Chen C, Baek R, Lee J, Jeong Y. Physical DC and thermal noise models of 18 nm double-gate junctionless p-type MOSFETs for low noise RF applications Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.04Dc08 |
0.438 |
|
2012 |
Chen C, Lee R, Tan G, Chen DC, Lei P, Yeh C. Equivalent Sheet Resistance of Intrinsic Noise in Sub-100-nm MOSFETs Ieee Transactions On Electron Devices. 59: 2215-2220. DOI: 10.1109/Ted.2012.2198651 |
0.423 |
|
2008 |
Chen C. Accuracy Issues Of On-Wafer Microwave Noise Measurements Fluctuation and Noise Letters. 8. DOI: 10.1142/S0219477508005136 |
0.431 |
|
2008 |
Chen C, Wang Y, Bakr MH, Zeng Z. Novel Noise Parameter Determination for On-Wafer Microwave Noise Measurements Ieee Transactions On Instrumentation and Measurement. 57: 2462-2471. DOI: 10.1109/Tim.2008.925021 |
0.434 |
|
2007 |
Asgaran S, Deen MJ, Chen C. Design of the Input Matching Network of RF CMOS LNAs for Low-Power Operation Ieee Transactions On Circuits and Systems I: Regular Papers. 54: 544-554. DOI: 10.1109/Tcsi.2006.887622 |
0.38 |
|
2007 |
Asgaran S, Deen MJ, Chen C, Rezvani GA, Kamali Y, Kiyota Y. Analytical Determination of MOSFET's High-Frequency Noise Parameters From NF $_{50}$ Measurements and Its Application in RFIC Design Ieee Journal of Solid-State Circuits. 42: 1034-1043. DOI: 10.1109/Jssc.2007.894309 |
0.452 |
|
2006 |
Deen MJ, Chen C, Asgaran S, Rezvani GA, Tao J, Kiyota Y. High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues Ieee Transactions On Electron Devices. 53: 2062-2081. DOI: 10.1109/Ted.2006.880370 |
0.46 |
|
2006 |
Asgaran S, Deen MJ, Chen C. A 4-mW monolithic CMOS LNA at 5.7GHz with the gate resistance used for input matching Ieee Microwave and Wireless Components Letters. 16: 188-190. DOI: 10.1109/Lmwc.2006.872128 |
0.398 |
|
2006 |
Naseh S, Deen MJ, Chen C. Hot-carrier reliability of submicron NMOSFETs and integrated NMOS low noise amplifiers Microelectronics Reliability. 46: 201-212. DOI: 10.1016/J.Microrel.2005.04.009 |
0.405 |
|
2005 |
Cheng Y, Deen MJ, Chen C. MOSFET modeling for RF IC design Ieee Transactions On Electron Devices. 52: 1286-1303. DOI: 10.1109/Ted.2005.850656 |
0.395 |
|
2005 |
Naseh S, Deen MJ, Chen C. Effects of hot-carrier stress on the performance of CMOS low-noise amplifiers Ieee Transactions On Device and Materials Reliability. 5: 501-508. DOI: 10.1109/Tdmr.2005.853502 |
0.392 |
|
2005 |
Ranuarez JC, Deen MJ, Chen C. Modeling the partition of noise from the gate-tunneling current in MOSFETs Ieee Electron Device Letters. 26: 550-552. DOI: 10.1109/Led.2005.851813 |
0.402 |
|
2004 |
Asgaran S, Deen MJ, Chen C. Analytical modeling of MOSFETs channel noise and noise parameters Ieee Transactions On Electron Devices. 51: 2109-2114. DOI: 10.1109/Ted.2004.838450 |
0.446 |
|
2002 |
Chen C, Deen MJ. Channel noise modeling of deep submicron MOSFETs Ieee Transactions On Electron Devices. 49: 1484-1487. DOI: 10.1109/Ted.2002.801229 |
0.422 |
|
2002 |
Cheng Y, Chen C, Matloubian M, Deen MJ. High-frequency small signal AC and noise modeling of MOSFETs for RF IC design Ieee Transactions On Electron Devices. 49: 400-408. DOI: 10.1109/16.987109 |
0.442 |
|
2001 |
Chen C, Deen MJ, Cheng Y, Matloubian M. Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements Ieee Transactions On Electron Devices. 48: 2884-2892. DOI: 10.1109/16.974722 |
0.417 |
|
2001 |
Chen C, Deen MJ. Rf Cmos Noise Characterization And Modeling International Journal of High Speed Electronics and Systems. 11: 1085-1157. DOI: 10.1016/S0129-1564(01)00106-4 |
0.466 |
|
2000 |
Chen C, Deen MJ. Direct extraction of the channel thermal noise in metal-oxide-semiconductor field effect transistor from measurements of their rf noise parameters Journal of Vacuum Science and Technology. 18: 757-760. DOI: 10.1116/1.582174 |
0.433 |
|
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