Byoung H. Moon, Ph.D. - Publications
Affiliations: | 2010 | University of Florida, Gainesville, Gainesville, FL, United States |
Area:
General PhysicsYear | Citation | Score | |||
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2019 | Moon BH, Bae JJ, Han GH, Kim H, Choi H, Lee YH. Anomalous Conductance near Percolative Metal-Insulator Transition in Monolayer MoS at Low Voltage Regime. Acs Nano. PMID 31122017 DOI: 10.1021/Acsnano.9B00755 | 0.378 | |||
2018 | Moon BH, Bae JJ, Joo MK, Choi H, Han GH, Lim H, Lee YH. Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS. Nature Communications. 9: 2052. PMID 29795384 DOI: 10.1038/S41467-018-04474-4 | 0.339 | |||
2017 | Moon BH, Han GH, Kim H, Choi H, Bae JJ, Kim J, Jin Y, Jeong HY, Joo MK, Lee YH, Lim SC. Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors. Acs Applied Materials & Interfaces. PMID 28266221 DOI: 10.1021/Acsami.6B16692 | 0.348 | |||
2016 | Lee JH, Gul HZ, Kim H, Moon BH, Adhikari S, Kim JH, Choi H, Lee YH, Lim SC. Photocurrent Switching of Monolayer MoS2 using Metal-Insulator Transition. Nano Letters. PMID 28029262 DOI: 10.1021/Acs.Nanolett.6B03689 | 0.315 | |||
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