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Michele Amato - Publications

Affiliations: 
Laboratoire de Physique des Solides (LPS) Université Paris-Saclay 
Area:
Computational materials science; Condensed matter physics; First-principles calculations; Density Functional Theory
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28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Marri I, Grillo S, Amato M, Ossicini S, Pulci O. Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core-Shell Nanocrystals. The Journal of Physical Chemistry. C, Nanomaterials and Interfaces. 127: 1209-1219. PMID 36704663 DOI: 10.1021/acs.jpcc.2c07024  0.625
2020 Marri I, Amato M, Bertocchi M, Ferretti A, Varsano D, Ossicini S. Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures. Physical Chemistry Chemical Physics : Pccp. PMID 33164017 DOI: 10.1039/d0cp04013d  0.59
2020 Ossicini S, Marri I, Amato M, Palummo M, Canadell E, Rurali R. Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase. Faraday Discussions. PMID 32108213 DOI: 10.1039/C9Fd00085B  0.67
2020 Galvão Tizei LH, Amato M. Electronic structure and optical properties of semiconductor nanowires polytypes The European Physical Journal B. 93. DOI: 10.1140/epjb/e2019-100375-7  0.323
2019 Amato M, Ossicini S, Canadell E, Rurali R. Preferential positioning, stability and segregation of dopants in hexagonal Si nanowires. Nano Letters. PMID 30608707 DOI: 10.1021/Acs.Nanolett.8B04083  0.618
2018 Fasolato C, De Luca M, Djomani D, Vincent L, Renard C, Di Iorio G, Paillard V, Amato M, Rurali R, Zardo I. Crystalline, Phononic, and Electronic Properties of Heterostructured Polytypic Ge Nanowires by Raman Spectroscopy. Nano Letters. PMID 30185053 DOI: 10.1021/acs.nanolett.8b03073  0.432
2018 Marri I, Amato M, Guerra R, Ossicini S. First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications Physica Status Solidi (B). 255: 1700627. DOI: 10.1002/Pssb.201700627  0.594
2017 David T, Liu K, Ronda A, Favre L, Abbarchi M, Gailhanou M, Gentile P, Buttard D, Calvo V, Amato M, Aqua JN, Berbezier I. Tailoring strain and morphology of core-shell SiGe nanowires by low temperature Ge condensation. Nano Letters. PMID 29116815 DOI: 10.1021/acs.nanolett.7b02832  0.33
2016 Amato M, Kaewmaraya T, Zobelli A, Palummo M, Rurali R. Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions. Nano Letters. PMID 27530077 DOI: 10.1021/acs.nanolett.6b02362  0.494
2016 Amato M, Bertocchi M, Ossicini S. Work function bowing in Si1- xGex heterostructures: Ab initio results Journal of Applied Physics. 119. DOI: 10.1063/1.4942526  0.572
2016 Amato M, Rurali R. Surface physics of semiconducting nanowires Progress in Surface Science. 91: 1-28. DOI: 10.1016/j.progsurf.2015.11.001  0.403
2015 Amato M, Rurali R. Shell-Thickness Controlled Semiconductor-Metal Transition in Si-SiC Core-Shell Nanowires. Nano Letters. 15: 3425-30. PMID 25840046 DOI: 10.1021/acs.nanolett.5b00670  0.408
2015 Amato M, Rurali R. Shell-thickness controlled semiconductor-metal transition in Si-SiC core-shell nanowires Nano Letters. 15: 3425-3430. DOI: 10.1021/acs.nanolett.5b00670  0.406
2015 Pouch S, Amato M, Bertocchi M, Ossicini S, Chevalier N, Mélin T, Hartmann JM, Renault O, Delaye V, Mariolle D, Borowik L. Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy Journal of Physical Chemistry C. 119: 26776-26782. DOI: 10.1021/Acs.Jpcc.5B09278  0.515
2014 Amato M, Palummo M, Rurali R, Ossicini S. Silicon-germanium nanowires: chemistry and physics in play, from basic principles to advanced applications. Chemical Reviews. 114: 1371-412. PMID 24266833 DOI: 10.1021/Cr400261Y  0.556
2014 Amato M, Rurali R, Palummo M, Ossicini S. Understanding doping at the nanoscale: The case of codoped Si and Ge nanowires Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/39/394013  0.672
2014 Bourrellier R, Amato M, Galvão Tizei LH, Giorgetti C, Gloter A, Heggie MI, March K, Stéphan O, Reining L, Kociak M, Zobelli A. Nanometric Resolved Luminescence in h-BN Flakes: Excitons and Stacking Order Acs Photonics. 1: 857-862. DOI: 10.1021/Ph500141J  0.546
2014 Zobelli A, Bourrellier R, Amato M, Meuret S, Tizei LHG, Giorgetti C, Gloter A, Heggie MI, March K, Stephan O, Reining L, Kociak M. Nanometric resolved cathodoluminescence on few-layer h-BN flakes Microscopy and Microanalysis. 20: 1746-1747. DOI: 10.1017/S1431927614010460  0.6
2012 Amato M, Ossicini S, Rurali R. Electron transport in SiGe alloy nanowires in the ballistic regime from first-principles. Nano Letters. 12: 2717-21. PMID 22545577 DOI: 10.1021/Nl204313V  0.546
2012 Amato M, Palummo M, Rurali R, Ossicini S. Optical absorption modulation by selective codoping of SiGe core-shell nanowires Journal of Applied Physics. 112. DOI: 10.1063/1.4768475  0.6
2012 Amato M, Palummo M, Ossicini S. Band structure analysis in SiGe nanowires Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 177: 705-711. DOI: 10.1016/J.Mseb.2011.10.008  0.66
2012 Amato M, Rurali R, Ossicini S. Doping of SiGe core-shell nanowires Journal of Computational Electronics. 11: 272-279. DOI: 10.1007/S10825-012-0394-Y  0.669
2011 Amato M, Ossicini S, Rurali R. Band-offset driven efficiency of the doping of SiGe core-shell nanowires. Nano Letters. 11: 594-8. PMID 21188962 DOI: 10.1021/Nl103621S  0.653
2010 Ossicini S, Amato M, Guerra R, Palummo M, Pulci O. Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results. Nanoscale Research Letters. 5: 1637-1649. PMID 21076696 DOI: 10.1007/S11671-010-9688-9  0.658
2010 Palummo M, Amato M, Ossicini S. Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.073305  0.549
2010 Amato M, Palummo M, Ossicini S. Segregation, quantum confinement effect and band offset for [110] SiGe NWs Physica Status Solidi (B) Basic Research. 247: 2096-2101. DOI: 10.1002/Pssb.200983931  0.622
2009 Amato M, Palummo M, Ossicini S. SiGe nanowires: Structural stability, quantum confinement, and electronic properties Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.235333  0.651
2009 Amato M, Palummo M, Ossicini S. Reduced quantum confinement effect and electron-hole separation in SiGe nanowires Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.201302  0.656
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