Vijay R. D'Costa, Ph.D.
Affiliations: | Arizona State University, Tempe, AZ, United States |
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semiconductorsGoogle:
"Vijay D'Costa"Mean distance: 17.53
Parents
Sign in to add mentorJosé Menéndez | grad student | 2006 | Arizona State | |
(Electronic and vibrational properties of germanium-tin and silicon -germanium -tin alloys.) |
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Publications
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D'Costa VR, Wang W, Yeo Y. (2016) Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy Journal of Applied Physics. 120: 063104 |
Wang W, Loke WK, Yin T, et al. (2016) Growth and characterization of highly tensile strained Ge1−xSnx formed on relaxed InyGa1−yP buffer layers Journal of Applied Physics. 119: 125303 |
D'Costa VR, Wang W, Zhou Q, et al. (2014) Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys Journal of Applied Physics. 116 |
Huang Y, Ryou JH, Dupuis RD, et al. (2011) Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors Journal of Crystal Growth. 314: 92-96 |
Tice JB, D'Costa VR, Grzybowski G, et al. (2010) Synthesis and optical properties of amorphous Si3N 4- xPx dielectrics and complementary insights from ab initio structural simulations Chemistry of Materials. 22: 5296-5305 |
D'Costa VR, Fang YY, Tolle J, et al. (2010) Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors Thin Solid Films. 518: 2531-2537 |
Tice JB, Weng C, Tolle J, et al. (2009) Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics. Dalton Transactions (Cambridge, England : 2003). 6773-82 |
D'Costa VR, Fang YY, Tolle J, et al. (2009) Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys. Physical Review Letters. 102: 107403 |
D'Costa VR, Tolle J, Xie J, et al. (2009) Infrared dielectric function of p -type Ge0.98 Sn0.02 alloys Physical Review B - Condensed Matter and Materials Physics. 80 |
D'Costa VR, Fang Y, Mathews J, et al. (2009) Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands Semiconductor Science and Technology. 24 |