Daniel Recht, Ph.D.
Affiliations: | Engineering and Applied Sciences | Harvard University, Cambridge, MA, United States |
Area:
Materials and Energy TechnologiesGoogle:
"Daniel Recht"Mean distance: 14.21 | S | N | B | C | P |
Parents
Sign in to add mentor| Michael J. Aziz | grad student | 2012 | Harvard | |
| (Energetic Beam Processing of Silicon to Engineer Optoelectronically Active Defects.) | ||||
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Publications
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| Akey AJ, Recht D, Williams JS, et al. (2015) Single-Phase Filamentary Cellular Breakdown Via Laser-Induced Solute Segregation Advanced Functional Materials. 25: 4642-4649 |
| Mailoa JP, Akey AJ, Simmons CB, et al. (2014) Room-temperature sub-band gap optoelectronic response of hyperdoped silicon. Nature Communications. 5: 3011 |
| Mailoa JP, Akey AJ, Simmons CB, et al. (2014) Hyperdoped silicon sub-band gap photoresponse for an intermediate band solar cell in silicon 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1073-1076 |
| Sher MJ, Simmons CB, Krich JJ, et al. (2014) Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon Applied Physics Letters. 105 |
| Warrender JM, Mathews J, Recht D, et al. (2014) Morphological stability during solidification of silicon incorporating metallic impurities Journal of Applied Physics. 115 |
| Mathews J, Akey AJ, Recht D, et al. (2014) On the limits to Ti incorporation into Si using pulsed laser melting Applied Physics Letters. 104 |
| Simmons CB, Akey AJ, Mailoa JP, et al. (2014) Enhancing the infrared photoresponse of silicon by controlling the fermi level location within an impurity band Advanced Functional Materials. 24: 2852-2858 |
| Lu C, Recht D, Arnold C. (2013) Generalized model for photoinduced surface structure in amorphous thin films. Physical Review Letters. 111: 105503 |
| Simmons CB, Akey AJ, Krich JJ, et al. (2013) Deactivation of metastable single-crystal silicon hyperdoped with sulfur Journal of Applied Physics. 114 |
| Recht D, Smith MJ, Charnvanichborikarn S, et al. (2013) Supersaturating silicon with transition metals by ion implantation and pulsed laser melting Journal of Applied Physics. 114 |