Dmitry A. Ruzmetov, Ph.D.

Affiliations: 
Indiana University, Bloomington, Bloomington, IN, United States 
Area:
Materials Physics
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"Dmitry Ruzmetov"
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Parents

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David V. Baxter grad student 2003 Indiana University
 (Hall effect in gallium manganese arsenide-diluted magnetic semiconductors.)
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Publications

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Crawford KG, Weil JD, Shah PB, et al. (2020) Diamond Field-Effect Transistors With V 2 O 5 -Induced Transfer Doping: Scaling to 50-nm Gate Length Ieee Transactions On Electron Devices. 67: 2270-2275
Zhang K, Jariwala B, Li J, et al. (2017) Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides. Nanoscale
O'Regan TP, Ruzmetov D, Neupane MR, et al. (2017) Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN Applied Physics Letters. 111: 051602
Talin AA, Ruzmetov D, Kolmakov A, et al. (2016) Fabrication, Testing, and Simulation of All-Solid-State Three-Dimensional Li-Ion Batteries. Acs Applied Materials & Interfaces. 8: 32385-32391
Ruzmetov D, Zhang K, Stan G, et al. (2016) Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride. Acs Nano
Gong C, Ruzmetov D, Pearse AJ, et al. (2015) Surface/Interface Effects on High-Performance Thin-Film All-Solid-State Li-Ion Batteries. Acs Applied Materials & Interfaces
Ruzmetov D, Oleshko VP, Haney PM, et al. (2012) Electrolyte stability determines scaling limits for solid-state 3D Li ion batteries. Nano Letters. 12: 505-11
Chang CL, Sankaranarayanan SKRS, Ruzmetov D, et al. (2010) Compositional tuning of ultrathin surface oxides on metal and alloy substrates using photons: Dynamic simulations and experiments Physical Review B - Condensed Matter and Materials Physics. 81
Aydogdu GH, Ruzmetov D, Ramanathan S. (2010) Metastable oxygen incorporation into thin film NiO by low temperature active oxidation: Influence on hole conduction Journal of Applied Physics. 108: 113702
Ruzmetov D, Gopalakrishnan G, Ko C, et al. (2010) Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer Journal of Applied Physics. 107
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