Dmitry A. Ruzmetov, Ph.D.
Affiliations: | Indiana University, Bloomington, Bloomington, IN, United States |
Area:
Materials PhysicsGoogle:
"Dmitry Ruzmetov"Mean distance: 16.92 | S | N | B | C | P |
Parents
Sign in to add mentorDavid V. Baxter | grad student | 2003 | Indiana University | |
(Hall effect in gallium manganese arsenide-diluted magnetic semiconductors.) |
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Publications
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Crawford KG, Weil JD, Shah PB, et al. (2020) Diamond Field-Effect Transistors With V 2 O 5 -Induced Transfer Doping: Scaling to 50-nm Gate Length Ieee Transactions On Electron Devices. 67: 2270-2275 |
Zhang K, Jariwala B, Li J, et al. (2017) Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides. Nanoscale |
O'Regan TP, Ruzmetov D, Neupane MR, et al. (2017) Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN Applied Physics Letters. 111: 051602 |
Talin AA, Ruzmetov D, Kolmakov A, et al. (2016) Fabrication, Testing, and Simulation of All-Solid-State Three-Dimensional Li-Ion Batteries. Acs Applied Materials & Interfaces. 8: 32385-32391 |
Ruzmetov D, Zhang K, Stan G, et al. (2016) Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride. Acs Nano |
Gong C, Ruzmetov D, Pearse AJ, et al. (2015) Surface/Interface Effects on High-Performance Thin-Film All-Solid-State Li-Ion Batteries. Acs Applied Materials & Interfaces |
Ruzmetov D, Oleshko VP, Haney PM, et al. (2012) Electrolyte stability determines scaling limits for solid-state 3D Li ion batteries. Nano Letters. 12: 505-11 |
Chang CL, Sankaranarayanan SKRS, Ruzmetov D, et al. (2010) Compositional tuning of ultrathin surface oxides on metal and alloy substrates using photons: Dynamic simulations and experiments Physical Review B - Condensed Matter and Materials Physics. 81 |
Aydogdu GH, Ruzmetov D, Ramanathan S. (2010) Metastable oxygen incorporation into thin film NiO by low temperature active oxidation: Influence on hole conduction Journal of Applied Physics. 108: 113702 |
Ruzmetov D, Gopalakrishnan G, Ko C, et al. (2010) Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer Journal of Applied Physics. 107 |