John S. Colton, Ph.D.
Affiliations: | University of California, Berkeley, Berkeley, CA, United States |
Area:
semiconductor physicsGoogle:
"John Colton"Mean distance: 17.55 | S | N | B | C | P |
Parents
Sign in to add mentor| Peter Y. Yu | grad student | 2000 | UC Berkeley | |
| (Selective excitation of the yellow and blue luminescence in n- and p-doped gallium nitride.) | ||||
Children
Sign in to add trainee| Aaron Mitchell Jones | research assistant | 2008-2010 | BYU (Chemistry Tree) |
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Publications
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| Hansen KR, Peterson JR, Perego A, et al. (2018) Lead sulfide quantum dots inside ferritin: synthesis and application to photovoltaics Applied Nanoscience. 8: 1687-1699 |
| Olsen C, Embley J, Hansen K, et al. (2017) Tuning Ferritin's Band Gap through Mixed Metal Oxide Nanoparticle Formation. Nanotechnology |
| Olsen C, Smith T, Embley J, et al. (2017) Permanganate-Based Synthesis of Manganese Oxide Nanoparticles in Ferritin. Nanotechnology |
| Erickson SD, Smith TJ, Moses LM, et al. (2015) Non-native Co-, Mn-, and Ti-oxyhydroxide nanocrystals in ferritin for high efficiency solar energy conversion. Nanotechnology. 26: 015703 |
| Bair N, Hancock JM, Simonson CJ, et al. (2015) Assemblies composed of oligothiophene-ruthenium complexes bound to CdSe nanoparticles Journal of Luminescence. 158: 501-509 |
| Colton JS, Erickson SD, Smith TJ, et al. (2014) Sensitive detection of surface- and size-dependent direct and indirect band gap transitions in ferritin. Nanotechnology. 25: 135703 |
| Park TD, Colton JS, Farrer JK, et al. (2014) Annealing-induced change in quantum dot chain formation mechanism Aip Advances. 4 |
| Yang H, Kim DJ, Colton JS, et al. (2014) Growth and temperature dependent photoluminescence of InGaAs quantum dot chains Applied Surface Science. 296: 8-14 |
| Colton JS, Meyer D, Clark K, et al. (2012) Long-lived electron spins in a modulation doped (100) GaAs quantum well Journal of Applied Physics. 112 |
| Colton JS, Clark K, Meyer D, et al. (2012) Universal scheme for measuring the electron T 1 in semiconductors and application to a lightly-doped n-GaAs sample Solid State Communications. 152: 410-413 |