Daniel C. Worledge, Ph.D.
Affiliations: | 2000 | Stanford University, Palo Alto, CA |
Area:
Condensed Matter, Nano Sci/Eng, Synchrotron RadiationGoogle:
"Daniel Worledge"Mean distance: 14.54 | S | N | B | C | P |
Parents
Sign in to add mentor| Theodore H. Geballe | grad student | 2000 | Stanford | |
| (Adiabatic small polaron hopping and spin -polarized tunneling in perovskite oxides.) | ||||
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Publications
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| Kent AD, Worledge DC. (2015) A new spin on magnetic memories. Nature Nanotechnology. 10: 187-91 |
| Sun JZ, Brown SL, Chen W, et al. (2013) Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions Physical Review B - Condensed Matter and Materials Physics. 88 |
| Worledge DC, Gajek M, Abraham DW, et al. (2012) Recent advances in spin torque MRAM 2012 4th Ieee International Memory Workshop, Imw 2012 |
| Gajek M, Nowak JJ, Sun JZ, et al. (2012) Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy Applied Physics Letters. 100 |
| Sun JZ, Robertazzi RP, Nowak JJ, et al. (2011) Spin-torque switchable perpendicular magnetic junctions for solid-state memory Device Research Conference - Conference Digest, Drc. 171-174 |
| Worledge DC, Hu G, Abraham DW, et al. (2011) Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions Applied Physics Letters. 98 |
| Konovalenko A, Lindgren E, Cherepov SS, et al. (2009) Spin dynamics of two-coupled nanomagnets in spin-flop tunnel junctions Physical Review B - Condensed Matter and Materials Physics. 80 |
| Worledge DC. (2004) Spin flop switching for magnetic random access memory Applied Physics Letters. 84: 4559-4561 |
| Worledge DC, Geballe TH. (2000) Negative spin-polarization of SrRuO3 Physical Review Letters. 85: 5182-5 |
| Worledge DC, Geballe TH. (2000) Magnetoresistive double spin filter tunnel junction Journal of Applied Physics. 88: 5277-5279 |