Yun Sun, Ph.D.

Affiliations: 
2003 Stanford University, Palo Alto, CA 
Area:
Photoemission spectroscopy
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"Yun Sun"
Mean distance: 15.36
 
SNBCP

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Piero Antonio Pianetta grad student 2003 Stanford
 (Indium phosphide negative electron affinity photocathodes: Surface cleaning and activation.)
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Publications

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Kuzum D, Krishnamohan T, Nainani A, et al. (2011) High-mobility Ge N-MOSFETs and mobility degradation mechanisms Ieee Transactions On Electron Devices. 58: 59-66
Hu J, Nainani A, Sun Y, et al. (2011) Impact of fixed charge on metal-insulator-semiconductor barrier height reduction Applied Physics Letters. 99
Swaminathan S, Sun Y, Pianetta P, et al. (2011) Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties Journal of Applied Physics. 110
Nainani A, Sun Y, Irisawa T, et al. (2011) Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning Journal of Applied Physics. 109
Yuan Z, Nainani A, Sun Y, et al. (2011) Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance Applied Physics Letters. 98
Lin JYJ, Roy AM, Nainani A, et al. (2011) Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height Applied Physics Letters. 98
Schwede JW, Bargatin I, Riley DC, et al. (2010) Photon-enhanced thermionic emission for solar concentrator systems. Nature Materials. 9: 762-7
Ardalan P, Sun Y, Pianetta P, et al. (2010) Reaction mechanism, bonding, and thermal stability of 1-alkanethiols self-assembled on halogenated Ge surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 8419-29
Toyoda S, Okabayashi J, Komatsu M, et al. (2010) Effects of Al doping and annealing on chemical states and band diagram of Y2 O3 /Si gate stacks studied by photoemission and x-ray absorption spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 16-19
Sun Y, Liu Z, Pianetta P. (2010) The dependence of the oxidation enhancement of InP(100) surface on the coverage of the adsorbed Cs Journal of Applied Physics. 107
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