Bruce M. Green, Ph.D.

Affiliations: 
2001 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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"Bruce Green"
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SNBCP

Parents

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Lester F. Eastman grad student 2001 Cornell
 (Characteristics, optimization, and integrated circuit applications of aluminum gallium nitride/gallium nitride high electron mobility transistors.)
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Publications

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Green B, Weitzel C. (2015) A brief history of GaAs technology at the GaAs IC symposium and a look ahead to the 2015 CSICS [Speakers' Corner] Ieee Microwave Magazine. 16: 120-123
Green B, Moore K, Hill D, et al. (2013) GaN RF device technology and applications, present and future Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting
Skromme BJ, Sasikumar A, Green BM, et al. (2010) Reduction of low-temperature nonlinearities in pseudomorphic AlGaAs/ingaas hemts due to si-related DX centers Ieee Transactions On Electron Devices. 57: 749-754
Hartin O, Green B. (2010) AlGaN/GaN HEMT TCAD simulation and model extraction for RF applications Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 232-236
Green BM, Henry H, Selbee J, et al. (2008) Characterization and thermal analysis of a 48 v GaN HFET device technology for wireless infrastructure applications Ieee Mtt-S International Microwave Symposium Digest. 651-654
Green B, Henry H, Moore K, et al. (2007) A GaN on SiC HFET device technology for wireless infrastructure applications International Journal of High Speed Electronics and Systems. 17: 11-14
Green BM, Henry H, Selbee J, et al. (2006) A GaN HFET device technology on 3" SiC substrates for wireless infrastructure applications Ieee Mtt-S International Microwave Symposium Digest. 706-709
Lan E, Green BM, Li P, et al. (2005) High power density InGaP PHEMTs for 26 V operation Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 375-378
Hwang J, Schaff WJ, Green BM, et al. (2004) Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors Solid-State Electronics. 48: 363-366
Green BM, Lan E, Li P, et al. (2004) A high power density 26 V GaAs pHEMT technology Ieee Mtt-S International Microwave Symposium Digest. 2: 817-820
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