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Vinayak Tilak, Ph.D.

Affiliations: 
2002 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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"Vinayak Tilak"
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Lester F. Eastman grad student 2002 Cornell
 (Fabrication and characterization of aluminum gallium nitride/gallium nitride high electron mobility transistors.)

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Publications

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Matocha K, Tilak V. (2011) Understanding the inversion-layer properties of the 4H-SiC/SiO2 interface Materials Science Forum. 679: 318-325
Tilak V, Matocha K. (2009) Comment on A. Agarwal and S. Haney, "some critical materials and processing issues in SiC power devices" [J. Electron. Mater. 37, 646 (2008)] Journal of Electronic Materials. 38: 618-620
Tucker JB, Matocha K, Tilak V, et al. (2006) 1500V SiC DIMOSFET development Ecs Transactions. 3: 367-372
Tilak V, Vertiatchikh A, Jiang J, et al. (2006) Piezoresistive and piezoelectric effects in GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2307-2311
Danylyuk SV, Vitusevich SA, Kaper V, et al. (2005) Phase noise study of AlGaN/GaN HEMT X-band oscillator Physica Status Solidi C: Conferences. 2: 2615-2618
Lee S, Webb KJ, Tilak V, et al. (2003) Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs Ieee Transactions On Microwave Theory and Techniques. 51: 1567-1577
Green BM, Tilak V, Kaper VS, et al. (2003) Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions Ieee Transactions On Microwave Theory and Techniques. 51: 618-623
Sahoo DK, Lal RK, Kim H, et al. (2003) High-field effects in silicon nitride passivated GaN MODFETs Ieee Transactions On Electron Devices. 50: 1163-1170
Koley G, Tilak V, Eastman LF, et al. (2003) Slow transients observed in AlGaN/GaN HFETs: Effects of SiNx passivation and UV illumination Ieee Transactions On Electron Devices. 50: 886-893
Kim H, Thompson RM, Tilak V, et al. (2003) Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation Ieee Electron Device Letters. 24: 421-423
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