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Hai Lu, Ph.D.

Affiliations: 
2003 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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"Hai Lu"
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Lester F. Eastman grad student 2003 Cornell
 (Electrical and optical properties of indium nitride and indium-rich nitrides prepared by molecular beam epitaxy for opto-electronics applications.)

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Publications

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Wu Y, Liu B, Li Z, et al. (2019) Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted–molecular beam epitaxy Journal of Crystal Growth. 506: 30-35
Zhang Z, Li Y, Liu W, et al. (2016) Controllable lasing behavior enabled by compound dielectric waveguide grating structures. Optics Express. 24: 19458-19466
Jiang T, Zhang YD, Chen Q, et al. (2016) TREM2 modifies microglial phenotype and provides neuroprotection in P301S tau transgenic mice. Neuropharmacology
Jiang T, Wan Y, Zhang YD, et al. (2016) TREM2 Overexpression has No Improvement on Neuropathology and Cognitive Impairment in Aging APPswe/PS1dE9 Mice. Molecular Neurobiology
Wu WJ, Shi J, Hu G, et al. (2015) Wnt/β-catenin signaling inhibits FBXW7 expression by upregulation of microRNA-770 in hepatocellular carcinoma. Tumour Biology : the Journal of the International Society For Oncodevelopmental Biology and Medicine
Inushima T, K. Maude D, Lu H, et al. (2012) Superconducting Properties of InN with Low Carrier Density near the Mott Transition Journal of the Physical Society of Japan. 81: 044704
Rauch C, Tuomisto F, King PDC, et al. (2012) Self-compensation in highly n-type InN Applied Physics Letters. 101: 11903
Davydov VY, Klochikhin AA, Smirnov AN, et al. (2010) Resonant raman scattering and dispersion of polar optical and acoustic phonons in hexagonal inn Semiconductors. 44: 161-170
Rauch C, Reurings F, Tuomisto F, et al. (2010) In-vacancies in Si-doped InN Physica Status Solidi (a) Applications and Materials Science. 207: 1083-1086
Jones RE, Li SX, Yu KM, et al. (2009) Properties of native point defects in In1-xAlxN alloys Journal of Physics D: Applied Physics. 42
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