Kristopher D. Matthews, Ph.D.
Affiliations: | 2011 | Cornell University, Ithaca, NY, United States |
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistorsGoogle:
"Kristopher Matthews"Mean distance: 16.2 | S | N | B | C | P |
Parents
Sign in to add mentorLester F. Eastman | grad student | 2011 | Cornell | |
(MBE growth of high performance nitride devices for energy, communications, and defense applications.) |
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Publications
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Matthews KD, Chen X, Hao D, et al. (2010) GaN photovoltaic leakage current and correlation to grain size Journal of Applied Physics. 108 |
Chen X, Matthews KD, Hao D, et al. (2009) MBE growth and characterization of Mg-doped III-nitrides on sapphire International Journal of High Speed Electronics and Systems. 19: 113-119 |
Chen X, Matthews KD, Hao D, et al. (2008) Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications Conference Record of the Ieee Photovoltaic Specialists Conference |
Matthews KD, Chen X, Hao D, et al. (2008) MBE growth and characterization of Mg-doped InGaN and InAlN Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1863-1865 |
Schaff WJ, Chen X, Hao D, et al. (2008) Electrical properties of InGaN grown by molecular beam epitaxy Physica Status Solidi (B) Basic Research. 245: 868-872 |
Chen X, Matthews KD, Hao D, et al. (2008) Growth, fabrication, and characterization of InGaN solar cells Physica Status Solidi (a) Applications and Materials Science. 205: 1103-1105 |