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Kristopher D. Matthews, Ph.D.

Affiliations: 
2011 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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"Kristopher Matthews"
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Lester F. Eastman grad student 2011 Cornell
 (MBE growth of high performance nitride devices for energy, communications, and defense applications.)

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Publications

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Matthews KD, Chen X, Hao D, et al. (2010) GaN photovoltaic leakage current and correlation to grain size Journal of Applied Physics. 108
Chen X, Matthews KD, Hao D, et al. (2009) MBE growth and characterization of Mg-doped III-nitrides on sapphire International Journal of High Speed Electronics and Systems. 19: 113-119
Chen X, Matthews KD, Hao D, et al. (2008) Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications Conference Record of the Ieee Photovoltaic Specialists Conference
Matthews KD, Chen X, Hao D, et al. (2008) MBE growth and characterization of Mg-doped InGaN and InAlN Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1863-1865
Schaff WJ, Chen X, Hao D, et al. (2008) Electrical properties of InGaN grown by molecular beam epitaxy Physica Status Solidi (B) Basic Research. 245: 868-872
Chen X, Matthews KD, Hao D, et al. (2008) Growth, fabrication, and characterization of InGaN solar cells Physica Status Solidi (a) Applications and Materials Science. 205: 1103-1105
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