Zhores I. Alferov

A.F. Ioffe Physico-Technical Institute, St. Petersburg 
"Zhores I. Alferov"

The Nobel Prize in Physics 2000 was awarded "for basic work on information and communication technology" with one half jointly to Zhores I. Alferov and Herbert Kroemer "for developing semiconductor heterostructures used in high-speed- and opto-electronics" and the other half to Jack S. Kilby "for his part in the invention of the integrated circuit".

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Mozharov AM, Bolshakov AD, Cirlin GE, et al. (2016) Simulation of photovoltaic efficiency of a tandem solar cell on Si with GaN nanowires as an emitter layer Journal of Physics: Conference Series. 690
Alferov ZI, Laverov NP, Sarkisov AA. (2012) The Academy of sciences' role in ensuring the protection and concealment of Russian Naval Ships Herald of the Russian Academy of Sciences. 82: 302-310
Alferov ZI. (2011) Semiconductor lasers and nanotechnologies Herald of the Russian Academy of Sciences. 81: 197-203
Ledentsov NN, Ustinov VM, Shchukin VA, et al. (2001) High-power long-wavelength lasers using GaAs-based quantum dots Proceedings of Spie - the International Society For Optical Engineering. 4287: 71-82
Ledentsov NN, Litvinov D, Rosenauer A, et al. (2001) Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces Journal of Electronic Materials. 30: 463-470
Maximov MV, Tsatsul'nikov AF, Volovik BV, et al. (2000) Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors Physica E: Low-Dimensional Systems and Nanostructures. 7: 326-330
Heitz R, Ledentsov NN, Bimberg D, et al. (2000) Optical properties of InAs quantum dots in a Si matrix Physica E: Low-Dimensional Systems and Nanostructures. 7: 317-321
Zhukov AE, Kovsh AR, Ustinov VM, et al. (2000) 3.5 W continuous wave operation from quantum dot laser Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 74: 70-74
Ustinov VM, Zhukov AE, Kovsh AR, et al. (2000) Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates Microelectronics Journal. 31: 1-7
Hoist J, Straßburg M, Ledentsov NM, et al. (1998) Lasing and gain mechanisms in AlGaN-GaN-double heterostructures: Correlation with structural properties Materials Science Forum. 264: 1291-1294
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