Herbert Kroemer

1968-1976 Electrical Engineering University of Colorado, Boulder, Boulder, CO, United States 
 1976- Electrical Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Heterostructures; Semiconductor/Superconductor Hybrids; Molecular-Beam Epitaxy
"Herbert Kroemer"

AKA Herbert Krömer
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Mean distance: 10.12


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Friedrich Hermann Hund research assistant 1948 Universität Jena
Richard Becker grad student 1952 Universität Göttingen
 (Zur Theorie des Germaniumgleichrichters und des Transistors)


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Mark S. Miller grad student UC Santa Barbara (E-Tree)
Colombo R. Bolognesi grad student 1993 UC Santa Barbara (E-Tree)
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J Koester S, Bolognesi CR, Hu EL, et al. (1994) Quantized conductance in an InAs/AlSb split-gate ballistic constriction with 1.0 microm channel length. Physical Review. B, Condensed Matter. 49: 8514-8517
Koester SJ, Bolognesi CR, Thomas M, et al. (1994) Determination of one-dimensional subband spacings in InAs/AlSb ballistic constrictions using magnetic-field measurements. Physical Review. B, Condensed Matter. 50: 5710-5712
Bolognesi CR, Caine EJ, Kroemer H. (1994) Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors Ieee Electron Device Letters. 15: 16-18
Gauer C, Scriba J, Wixforth A, et al. (1994) Energy-dependant cyclotron mass in InAs/AlSb quantum wells Semiconductor Science and Technology. 9: 1580-1583
Utzmeier T, Schlösser T, Ensslin K, et al. (1994) Lateral potential modulation in InAs/AlSb quantum wells by wet etching Solid-State Electronics. 37: 575-578
Bolognesi CR, Sela I, Ibbetson J, et al. (1993) On the interface structure in InAs/AlSb quantum wells grown by molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 11: 868-871
Bolognesi CR, Werking JD, Caine EJ, et al. (1993) Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor Ieee Electron Device Letters. 14: 13-15
Bolognesi CR, Caine EJ, Kroemer H. (1993) Improved charge control and the frequency performance in InAs/AlSb HFET's Ieee Transactions On Electron Devices. 40: 2114
Nguyen C, Brar B, Bolognesi CR, et al. (1993) Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations Journal of Electronic Materials. 22: 255-258
Sela I, Bolognesi CR, Kroemer H. (1992) Single-mode behavior of AlSb1-xAsx alloys. Physical Review. B, Condensed Matter. 46: 16142-16143
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