Herbert Kroemer
Affiliations: | 1968-1976 | Electrical Engineering | University of Colorado, Boulder, Boulder, CO, United States |
| 1976- | Electrical Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Heterostructures; Semiconductor/Superconductor Hybrids; Molecular-Beam EpitaxyWebsite:
http://www.nobelprize.org/nobel_prizes/physics/laureates/2000/kroemer-bio.htmlGoogle:
"Herbert Kroemer"Bio:
AKA Herbert Krömer
http://www.nasonline.org/member-directory/members/53605.html
http://engineering.ucsb.edu/faculty/profile/100
https://history.aip.org/phn/11604002.html
https://www.uni-goettingen.de/en/3240.html?cid=294
https://de.wikipedia.org/wiki/Herbert_Kroemer
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Mean distance: 10.12 | S | N | B | C | P |
Parents
Sign in to add mentor| Friedrich Hermann Hund | research assistant | 1948 | Universität Jena | |
| Richard Becker | grad student | 1952 | Universität Göttingen | |
| (Zur Theorie des Germaniumgleichrichters und des Transistors) | ||||
Children
Sign in to add trainee| Mark S. Miller | grad student | UC Santa Barbara (E-Tree) | |
| Colombo R. Bolognesi | grad student | 1993 | UC Santa Barbara (E-Tree) |
BETA: Related publications
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Publications
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| J Koester S, Bolognesi CR, Hu EL, et al. (1994) Quantized conductance in an InAs/AlSb split-gate ballistic constriction with 1.0 microm channel length. Physical Review. B, Condensed Matter. 49: 8514-8517 |
| Koester SJ, Bolognesi CR, Thomas M, et al. (1994) Determination of one-dimensional subband spacings in InAs/AlSb ballistic constrictions using magnetic-field measurements. Physical Review. B, Condensed Matter. 50: 5710-5712 |
| Bolognesi CR, Caine EJ, Kroemer H. (1994) Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors Ieee Electron Device Letters. 15: 16-18 |
| Gauer C, Scriba J, Wixforth A, et al. (1994) Energy-dependant cyclotron mass in InAs/AlSb quantum wells Semiconductor Science and Technology. 9: 1580-1583 |
| Utzmeier T, Schlösser T, Ensslin K, et al. (1994) Lateral potential modulation in InAs/AlSb quantum wells by wet etching Solid-State Electronics. 37: 575-578 |
| Bolognesi CR, Sela I, Ibbetson J, et al. (1993) On the interface structure in InAs/AlSb quantum wells grown by molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 11: 868-871 |
| Bolognesi CR, Werking JD, Caine EJ, et al. (1993) Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor Ieee Electron Device Letters. 14: 13-15 |
| Bolognesi CR, Caine EJ, Kroemer H. (1993) Improved charge control and the frequency performance in InAs/AlSb HFET's Ieee Transactions On Electron Devices. 40: 2114 |
| Nguyen C, Brar B, Bolognesi CR, et al. (1993) Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations Journal of Electronic Materials. 22: 255-258 |
| Sela I, Bolognesi CR, Kroemer H. (1992) Single-mode behavior of AlSb1-xAsx alloys. Physical Review. B, Condensed Matter. 46: 16142-16143 |