Herbert Kroemer

Affiliations: 
1968-1976 Electrical Engineering University of Colorado, Boulder, Boulder, CO, United States 
 1976- Electrical Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Heterostructures; Semiconductor/Superconductor Hybrids; Molecular-Beam Epitaxy
Website:
http://www.nobelprize.org/nobel_prizes/physics/laureates/2000/kroemer-bio.html
Google:
"Herbert Kroemer"
Bio:

AKA Herbert Krömer
http://www.nasonline.org/member-directory/members/53605.html
http://engineering.ucsb.edu/faculty/profile/100
https://history.aip.org/phn/11604002.html
https://www.uni-goettingen.de/en/3240.html?cid=294
https://de.wikipedia.org/wiki/Herbert_Kroemer
(Show more)

Mean distance: 10.12
 
SNBCP

Parents

Sign in to add mentor
Friedrich Hermann Hund research assistant 1948 Universität Jena
Richard Becker grad student 1952 Universität Göttingen
 (Zur Theorie des Germaniumgleichrichters und des Transistors)

Children

Sign in to add trainee
Mark S. Miller grad student UC Santa Barbara (E-Tree)
Colombo R. Bolognesi grad student 1993 UC Santa Barbara (E-Tree)
BETA: Related publications

Publications

You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

J Koester S, Bolognesi CR, Hu EL, et al. (1994) Quantized conductance in an InAs/AlSb split-gate ballistic constriction with 1.0 microm channel length. Physical Review. B, Condensed Matter. 49: 8514-8517
Koester SJ, Bolognesi CR, Thomas M, et al. (1994) Determination of one-dimensional subband spacings in InAs/AlSb ballistic constrictions using magnetic-field measurements. Physical Review. B, Condensed Matter. 50: 5710-5712
Bolognesi CR, Caine EJ, Kroemer H. (1994) Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors Ieee Electron Device Letters. 15: 16-18
Gauer C, Scriba J, Wixforth A, et al. (1994) Energy-dependant cyclotron mass in InAs/AlSb quantum wells Semiconductor Science and Technology. 9: 1580-1583
Utzmeier T, Schlösser T, Ensslin K, et al. (1994) Lateral potential modulation in InAs/AlSb quantum wells by wet etching Solid-State Electronics. 37: 575-578
Bolognesi CR, Sela I, Ibbetson J, et al. (1993) On the interface structure in InAs/AlSb quantum wells grown by molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 11: 868-871
Bolognesi CR, Werking JD, Caine EJ, et al. (1993) Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor Ieee Electron Device Letters. 14: 13-15
Bolognesi CR, Caine EJ, Kroemer H. (1993) Improved charge control and the frequency performance in InAs/AlSb HFET's Ieee Transactions On Electron Devices. 40: 2114
Nguyen C, Brar B, Bolognesi CR, et al. (1993) Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations Journal of Electronic Materials. 22: 255-258
Sela I, Bolognesi CR, Kroemer H. (1992) Single-mode behavior of AlSb1-xAsx alloys. Physical Review. B, Condensed Matter. 46: 16142-16143
See more...