Changhwan Shin, Ph.D.
Affiliations: | 2011 | Electrical Engineering & Computer Sciences | University of California, Berkeley, Berkeley, CA, United States |
Area:
NanofabricationGoogle:
"Changhwan Shin"Mean distance: 17.34
Parents
Sign in to add mentorTsu-Jae King Liu | grad student | 2011 | UC Berkeley | |
(Advanced MOSFET Designs and Implications for SRAM Scaling.) |
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Publications
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Noh C, Han C, Won SM, et al. (2022) Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm Technology. Micromachines. 13 |
Sun M, Baac HW, Shin C. (2022) Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM. Micromachines. 13 |
Park J, Jang W, Shin C. (2021) Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate Device. Micromachines. 12 |
Yoon C, Moon S, Shin C. (2020) Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor. Nano Convergence. 7: 19 |
Choi Y, Shin J, Moon S, et al. (2020) Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO/AlO Superlattice on Transparent ITO/Glass Substrate. Micromachines. 11 |
Park J, Kim J, Showdhury S, et al. (2020) Electrical Characteristics of Bulk FinFET According to Spacer Length Electronics. 9: 1283 |
Yoon C, Shin C. (2020) Electrical Characteristics of Nanoelectromechanical Relay with Multi-Domain HfO2-Based Ferroelectric Materials Electronics. 9: 1208 |
Moon S, Shin J, Shin C. (2020) Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications Electronics. 9: 704 |
Lee C, Sung J, Shin C. (2020) Understanding of Feedback Field-Effect Transistor and Its Applications Applied Sciences. 10: 3070 |
Lee C, Shin C. (2020) Study on Various Device Structures for Steep-Switching Silicon-on-Insulator Feedback Field-Effect Transistors Ieee Transactions On Electron Devices. 67: 1852-1858 |