Ammar Nayfeh, Ph.D.
Affiliations: | 2006 | Stanford University, Palo Alto, CA |
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"Ammar Nayfeh"Mean distance: 18.66
Parents
Sign in to add mentor| Krishna C. Saraswat | grad student | 2006 | Stanford | |
| (Heteroepitaxial growth of relaxed germanium on silicon.) | ||||
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Publications
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| Rezk A, Ansari MHR, Ranjeesh KC, et al. (2023) Nano-scale charge trapping memory based on two-dimensional conjugated microporous polymer. Scientific Reports. 13: 18845 |
| Rezk A, Alhammadi A, Alnaqbi W, et al. (2022) Utilizing trapped charge at bilayer 2D MoS/SiOinterface for memory applications. Nanotechnology. 33 |
| Abbas Y, Rezk A, Saadat I, et al. (2020) Time dependence of electrical characteristics during the charge decay from a single gold nanoparticle on silicon. Rsc Advances. 10: 41741-41746 |
| Rezk A, Abbas Y, Saadat I, et al. (2020) Charging and discharging characteristics of a single gold nanoparticle embedded in Al2O3 thin films Applied Physics Letters. 116: 223501 |
| Abbas Y, Rezk A, Anwer S, et al. (2019) Improved figures of merit of nano Schottky diode by embedding and characterizing individual gold nanoparticles on n-Si substrate. Nanotechnology |
| Abbas Y, Rezk A, Saadat I, et al. (2019) Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces. Scientific Reports. 9: 13586 |
| Dushaq G, Nayfeh A, Rasras M. (2019) Hexagonal germanium formation at room temperature using controlled penetration depth nano-indentation. Scientific Reports. 9: 1593 |
| Alkis S, Chowdhury FI, Alevli M, et al. (2019) Corrigendum: Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles (2015 J. Opt. 17 105903) Journal of Optics. 21: 049501 |
| Enders B, Kocyigit A, Bahceci E, et al. (2019) Wet non-thermal integration of nano binary silicon-gold system with strong plasmonic and luminescent characteristics Aip Advances. 9: 095039 |
| Dushaq G, Nayfeh A, Rasras M. (2019) Complementary metal oxide semiconductor (CMOS) compatible gallium arsenide metal-semiconductor-metal photodetectors (GaAs MSMPDs) on silicon using ultra-thin germanium buffer layer for visible photonic applications Journal of Applied Physics. 126: 193106 |