Anne S. Verhulst, Ph.D.

Affiliations: 
2005 Stanford University, Palo Alto, CA 
Area:
AMO Physics, Condensed Matter, Electrical Engineering, Information Sci/Tech, Laser Physics, Nano Sci/Eng, Photonics, Quantum Engineering, Quantum Information, Quantum Many-Body Physics, Quantum Optics, Statistical Physics
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"Anne Verhulst"
Mean distance: 18.08
 

Parents

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Yoshihisa Yamamoto grad student 2005 Stanford
 (Optical pumping experiments to increase the polarization in nuclear-spin based quantum computers.)
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Publications

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Smets Q, Verhulst AS, El Kazzi S, et al. (2016) Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction Ieee Transactions On Electron Devices
Verreck D, Verhulst AS, Van De Put ML, et al. (2016) Uniform strain in heterostructure tunnel field-effect transistors Ieee Electron Device Letters. 37: 337-340
Alian A, Franco J, Vandooren A, et al. (2016) Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET Technical Digest - International Electron Devices Meeting, Iedm. 2016: 31.7.1-31.7.4
Dehaene W, Verhulst AS. (2016) New devices for internet of things: A circuit level perspective Technical Digest - International Electron Devices Meeting, Iedm. 2016: 25.5.1-25.5.4
Thean AVY, Collaert N, Radu I, et al. (2015) Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics Ecs Transactions. 66: 3-14
Verreck D, Van De Put ML, Verhulst AS, et al. (2015) 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors 18th International Workshop On Computational Electronics, Iwce 2015
Verhulst AS, Verreck D, Smets Q, et al. (2015) Perspective of tunnel-FET for future low-power technology nodes Technical Digest - International Electron Devices Meeting, Iedm. 2015: 30.2.1-30.2.4
Smets Q, Verhulst AS, El Kazzi S, et al. (2015) Novel method to determine the band offset in hetero staggered bandgap TFET using Esaki diodes Device Research Conference - Conference Digest, Drc. 2015: 251-252
Verreck D, Verhulst AS, Van De Put M, et al. (2015) Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors Journal of Applied Physics. 118
Smets Q, Verhulst AS, El Kazzi S, et al. (2015) Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements Applied Physics Letters. 107
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