Rubin Braunstein
Affiliations: | Physics | University of California, Los Angeles, Los Angeles, CA |
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"Rubin Braunstein"Mean distance: 13552
Children
Sign in to add trainee| donald korn | grad student | 1971 | UCLA |
| donald deal | grad student | 1982 | UCLA |
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Publications
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| Boshta M, Morchshakov V, Bärner K, et al. (2008) The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure Advances in Materials Science and Engineering. 2008: 1-4 |
| Hahn W, Boshta M, Bärner K, et al. (2006) The charge transport properties of a-Si:H thin films under hydrostatic pressure Materials Science and Engineering B-Advanced Functional Solid-State Materials. 130: 184-188 |
| Boshta M, Bärner K, Braunstein R, et al. (2005) Determination of the Trap State Density Differences in Hydrogenated Amorphous Silicon-Germanium Alloys Journal of Materials Research. 20: 48-53 |
| Boshta M, Alavi B, Braunstein R, et al. (2005) Electronic transport properties of the μc-(Si,Ge) alloys prepared by ECR Solar Energy Materials and Solar Cells. 87: 387-393 |
| Boshta M, Bärner K, Braunstein R, et al. (2004) Determination of the trap state density differences in hydrogenated microcrystalline silicon - Germanium (Si:Ge:H) alloys Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 112: 69-72 |
| Nelson BP, Xu Y, Williamson DL, et al. (2003) Narrow gap a-SiGe:H grown by hot-wire chemical vapor deposition Thin Solid Films. 430: 104-109 |
| Boshta M, Braunstein R, Ganguly G. (2003) Electronic transport properties of low band gap a-SiGe:H alloys prepared by PECVD technique Journal of Non-Crystalline Solids. 315: 223-227 |
| Sheng SR, Sun GS, Liebe J, et al. (2002) Electronic properties of hydrogenated amorphous silicon-germanium alloys and long-range potential fluctuations Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 325: 490-496 |
| Sheng SR, Boshta M, Braunstein R, et al. (2002) On the electronic transport properties of amorphous (Si,Ge) alloys: Charged scattering centers and compositional disorder Journal of Non-Crystalline Solids. 303: 201-207 |
| Liebe J, Kattwinkel A, Bärner K, et al. (2000) Determination of the gap state density differences in hydrogenated amorphous silicon and Si/Ge Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 282: 158-163 |