Dipankar Saha, Ph.D.
Affiliations: | 2009 | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
semiconductorsGoogle:
"Dipankar Saha"Mean distance: 16.24
Parents
Sign in to add mentor| Pallab K. Bhattacharya | grad student | 2009 | University of Michigan | |
| (Ferromagnet/semiconductor based spintronic devices.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Udai A, Ganguly S, Bhattacharya P, et al. (2022) Real-time observation of delayed excited-state dynamics in InGaN/GaN quantum-wells by femtosecond transient absorption spectroscopy. Nanotechnology |
| Aggarwal T, Udai A, Saha PK, et al. (2022) Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs. Acs Applied Materials & Interfaces. 14: 13812-13819 |
| Udai A, Aiello A, Aggarwal T, et al. (2021) Gradual Carrier Filling Effect in "Green" InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption. Acs Applied Materials & Interfaces |
| Saha PK, Aggarwal T, Udai A, et al. (2020) Femto-second Carrier and Photon Dynamics in Site Controlled Hexagonal InGaN/GaN Isolated Quantum Dots: Natural radial potential well and its dynamic modulation Acs Photonics |
| Rawat A, Surana VK, Ganguly S, et al. (2020) Tensile strain and Fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTs Solid-State Electronics. 164: 107702 |
| Pendem V, Udai A, Aggarwal T, et al. (2019) Theoretical modelling of exciton binding energy, steady-state and transient optical response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN core-shell nanostructures. Nanotechnology |
| Chouksey S, Sreenadh S, Ganguly S, et al. (2019) Determination of size dependent carrier capture in InGaN/GaN quantum nanowires by femto-second transient absorption spectroscopy: effect of optical phonon, electron-electron scattering and diffusion. Nanotechnology |
| Rawat A, Surana VK, Meer M, et al. (2019) Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO 2 as a Dielectric Ieee Transactions On Electron Devices. 66: 2557-2562 |
| Sarkar R, Bhunia S, Nag D, et al. (2019) Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application Applied Physics Letters. 115: 63502 |
| Saha PK, Pendem V, Chouksey S, et al. (2018) Enhanced Luminescence from InGaN/GaN Nano-disk in a wire Array Caused by Surface Potential Modulation during Wet Treatment. Nanotechnology |