Chi-Sen Lee, Ph.D.
Affiliations: | 2012 | University of Michigan, Ann Arbor, Ann Arbor, MI |
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"Chi-Sen Lee"Mean distance: 16.24
Parents
Sign in to add mentorPallab K. Bhattacharya | grad student | 2012 | University of Michigan | |
(High Performance Quantum Dot Laser WDM Arrays for Optical Interconnects.) |
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Publications
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Yao R, Lee C, Podolskiy V, et al. (2019) Parity-Time Symmetry: Electrically Injected Parity Time-Symmetric Single Transverse-Mode Lasers (Laser Photonics Rev. 13(1)/2019) Laser & Photonics Reviews. 13: 1970010 |
Yao R, Lee CS, Podolskiy V, et al. (2018) Single-transverse-mode broadband InAs quantum dot superluminescent light emitting diodes by parity-time symmetry. Optics Express. 26: 30588-30595 |
Yao R, Lee C, Podolskiy V, et al. (2018) Electrically Injected Parity Time-Symmetric Single Transverse-Mode Lasers Laser & Photonics Reviews. 13: 1800154 |
Wang Z, Fanto ML, Steidle JA, et al. (2017) Passively mode-locked InAs quantum dot lasers on a silicon substrate by Pd-GaAs wafer bonding Applied Physics Letters. 110: 141110 |
Yao R, Weirs N, Lee C, et al. (2016) Broadband Swept-Source Laser in 1.1 to 1.3 µm with InAs Quantum Dot Gain Chip Devices Frontiers in Optics |
Wang Z, Preble SF, Fanto ML, et al. (2016) InAs quantum dot mode-locked lasers on a Si substrate by Pd-GaAs wafer bonding Frontiers in Optics |
Wang Z, Yao R, Preble S, et al. (2016) Characterizations of InAs quantum dot lasers butt-joint coupled with silicon photonics waveguides Proceedings of Spie. 9753: 975316 |
Weir N, Yao R, Lee C, et al. (2016) Effects of thickness and V/III ratio of low temperature capping layer growth to the optical properties of InAs quantum dots Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 41223 |
Yao R, Lee CS, Guo W. (2016) InAs Quantum Dot Lasers with Dry Etched Facet by Br-Ion Beam-Assisted Etching Ieee Photonics Technology Letters. 28: 1905-1907 |
Yao R, Weir N, Lee C, et al. (2016) Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With In x Al 1-x As Strain-Reducing Layers Ieee Photonics Journal. 8: 1-7 |