Sonny X. Li, Ph.D.

2006

Eugene E. Haller	grad student	2006	UC Berkeley
(Native point defects in indium nitride and indium-rich indium gallium nitride alloys.)

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Jones RE, Li SX, Yu KM, et al. (2009) Properties of native point defects in In1-xAlxN alloys Journal of Physics D: Applied Physics. 42
Hsu L, Jones RE, Li SX, et al. (2007) Electron mobility in InN and III-N alloys Journal of Applied Physics. 102
Jones R, Li S, Haller E, et al. (2007) High Electron Mobility InN Applied Physics Letters. 90: 162103
Ager JW, Jones RE, Yamaguchi DM, et al. (2007) p-type InN and In-rich InGaN Physica Status Solidi (B). 244: 1820-1824
Jones RE, Yu KM, Li SX, et al. (2006) Evidence for p-type doping of InN. Physical Review Letters. 96: 125505
Walukiewicz W, Ager JW, Yu KM, et al. (2006) Structure and electronic properties of InN and In-rich group III-nitride alloys Journal of Physics D. 39
Yu KM, Walukiewicz W, Ager JW, et al. (2006) Multiband GaNAsP quaternary alloys Applied Physics Letters. 88
Jones RE, Li SX, Hsu L, et al. (2006) Native-defect-controlled n-type conductivity in InN Physica B-Condensed Matter. 376: 436-439
Li SX, Yu KM, Wu J, et al. (2006) Native defects in InxGa1−xN alloys Physica B-Condensed Matter. 376: 432-435
Walukiewicz W, Jones R, Li S, et al. (2006) Dopants and defects in InN and InGaN alloys Journal of Crystal Growth. 288: 278-282