Parents

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James D. Oliver grad student 1985 UVA
 (Transient-photoresistance spectroscopy of deep levels in high resistivity semiconductors.)

Children

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Yan Yan grad student 2003 Notre Dame
Qingmin Liu grad student 2006 Notre Dame
Wei Zhao grad student 2006 Notre Dame
Zoltan Racz grad student 2007 Notre Dame
Jialin Zhao grad student 2007 Notre Dame
Surajit Sutar grad student 2009 Notre Dame
Dana C. Wheeler grad student 2009 Notre Dame
Qin Zhang grad student 2009 Notre Dame
Sajid Kabeer grad student 2010 Notre Dame
Bin Wu grad student 2010 Notre Dame
Hao Lu grad student 2014 Notre Dame
Timothy J. Vasen grad student 2014 Notre Dame
Sara Fathipour grad student 2017 Notre Dame
Cristobal Alessandri grad student 2019 Notre Dame
Mina Asghari Heidarlou grad student 2019 Notre Dame
Paolo Paletti grad student 2019 Notre Dame
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Publications

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Seabaugh A, Fathipour S, Li W, et al. (2016) Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels Technical Digest - International Electron Devices Meeting, Iedm. 2016: 35.6.1-35.6.4
Xu H, Fathipour S, Kinder EW, et al. (2015) Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte. Acs Nano. 9: 4900-10
Li HM, Lee D, Qu D, et al. (2015) Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide. Nature Communications. 6: 6564
Jiang Z, Lu Y, Tan Y, et al. (2015) Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction Ieee Transactions On Electron Devices. 62: 2445-2449
Jena D, Li M, Ma N, et al. (2015) Electron transport in 2D crystal semiconductors and their device applications 2014 Silicon Nanoelectronics Workshop, Snw 2014
Li W, Sharmin S, Ilatikhameneh H, et al. (2015) Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 28-34
Esseni D, Ionescu AM, Seabaugh A, et al. (2015) Foreword special issue on transistors with steep subthreshold swing for low-power electronics Ieee Journal of the Electron Devices Society. 3: 86-87
Fathipour S, Park JH, Kummel A, et al. (2015) Low-leakage WSe2 FET gate-stack using titanyl phthalocyanine seeding layer for atomic layer deposition of Al2O3 Device Research Conference - Conference Digest, Drc. 2015: 213-214
Xu K, Chu T, Bourdon B, et al. (2015) Reconfigurable p-n junction formation and bandgap opening in bilayer graphene using polyethylene oxide and CsClO4 solid polymer electrolyte Device Research Conference - Conference Digest, Drc. 2015: 173-174
Fathipour S, Remskar M, Varlec A, et al. (2015) Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors Applied Physics Letters. 106
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