Sajid Kabeer, Ph.D.
Affiliations: | 2010 | University of Notre Dame, Notre Dame, IN, United States |
Area:
NanoelectronicsGoogle:
"Sajid Kabeer"Mean distance: 19.07 | S | N | B | C | P |
Parents
Sign in to add mentor| Alan Carter Seabaugh | grad student | 2010 | Notre Dame | |
| (Indium-gallium-arsenide and germanium tunnel junctions.) | ||||
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Publications
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| Wheeler D, Kabeer S, Lu Y, et al. (2009) Fabrication approach for lateral InGaAs tunnel transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09 |
| Zhou G, Kabeer S, Wheeler D, et al. (2009) Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs 2009 International Semiconductor Device Research Symposium, Isdrs '09 |
| Kabeer S, Vasen T, Wheeler D, et al. (2009) Effect of dopant profile on current-voltage characteristics of p+n+ In 0.53Ga0.47As tunnel junctions 2009 International Semiconductor Device Research Symposium, Isdrs '09 |
| Wernersson LE, Kabeer S, Zela V, et al. (2005) A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation Ieee Transactions On Nanotechnology. 4: 594-597 |
| Wernersson LE, Kabeer S, Zela V, et al. (2004) SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion Electronics Letters. 40: 83-85 |
| Wernersson LE, Kabeer S, Zela V, et al. (2003) A combined UHV-CVD and rapid thermal diffusion process for SiGe esaki diodes by ultra shallow junction formation 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 164-165 |