Joe C. Campbell
Affiliations: | Electrical Engineering | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringGoogle:
"Joe Campbell"Children
Sign in to add traineeNing Li | grad student | ||
Clint Schow | grad student | ||
Ru Li | grad student | 2000 | UT Austin |
Jeremy D. Schaub | grad student | 2000 | UT Austin |
Ping Yuan | grad student | 2000 | UT Austin |
Sebastian M. Csutak | grad student | 2001 | UT Austin |
Geoffrey S. Kinsey | grad student | 2001 | UT Austin |
Shuling Wang | grad student | 2002 | UT Austin |
Jungwoo Oh | grad student | 2004 | UT Austin |
Xiangyi Guo | grad student | 2005 | UT Austin |
Ning Duan | grad student | 2006 | UT Austin |
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Publications
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Shen Y, Xue X, Jones AH, et al. (2022) Near 100% external quantum efficiency 1550-nm broad spectrum photodetector. Optics Express. 30: 3047-3054 |
Peng Y, Sun K, Shen Y, et al. (2020) Photonic generation of pulsed microwave signals in the X-, Ku- and K-band. Optics Express. 28: 28563-28572 |
Chen D, Sun K, Jones AH, et al. (2020) Efficient absorption enhancement approaches for AlInAsSb avalanche photodiodes for 2-μm applications. Optics Express. 28: 24379-24388 |
Yuan Y, Huang Z, Wang B, et al. (2020) 64 Gbps PAM4 Si-Ge Waveguide Avalanche Photodiodes With Excellent Temperature Stability Journal of Lightwave Technology. 38: 4857-4866 |
Peng Y, Sun K, Shen Y, et al. (2020) High-Power and High-Linearity Photodiodes at 1064 nm Journal of Lightwave Technology. 38: 4850-4856 |
Fink DR, Lee S, Kodati SH, et al. (2020) Determination of background doping polarity of unintentionally doped semiconductor layers Applied Physics Letters. 116: 072103 |
Jones AH, March SD, Bank SR, et al. (2020) Low-noise high-temperature AlInAsSb/GaSb avalanche photodiodes for 2-μm applications Nature Photonics. 14: 559-563 |
Yuan Y, Li Y, Abell J, et al. (2019) Triple-mesa avalanche photodiodes with very low surface dark current. Optics Express. 27: 22923-22929 |
Yuan Y, Jung D, Sun K, et al. (2019) III-V on silicon avalanche photodiodes by heteroepitaxy. Optics Letters. 44: 3538-3541 |
Jones AH, Rockwell A, March SD, et al. (2019) High Gain, Low Dark Current Al 0.8 In 0.2 As 0.23 Sb 0.77 Avalanche Photodiodes Ieee Photonics Technology Letters. 31: 1948-1951 |