Soojeong Choi, Ph.D.
Affiliations: | 2007 | Duke University, Durham, NC |
Area:
Materials Science Engineering, Optics Physics, Condensed Matter PhysicsGoogle:
"Soojeong Choi"Mean distance: (not calculated yet)
Parents
Sign in to add mentorHenry O. Everitt | grad student | 2007 | Duke | |
(Spectroscopic ellipsometry of group-III adatom kinetics on III-nitride semiconductor surfaces.) |
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Publications
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Kudrawiec R, Janicki L, Linhart WM, et al. (2019) Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN Journal of Applied Physics. 126: 45712 |
Choi S, Wu F, Bierwagen O, et al. (2013) Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology. 31: 31504 |
Bierwagen O, Choi S, Speck JS. (2012) Hall and Seebeck measurement of ap-nlayer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer Physical Review B. 85: 165205 |
Choi S, Wu F, Shivaraman R, et al. (2012) Publisher’s Note: “Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy” [Appl. Phys. Lett. 100, 232102 (2012)] Applied Physics Letters. 101: 49903 |
Choi S, Wu F, Shivaraman R, et al. (2012) Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy Applied Physics Letters. 100: 232102 |
Hoi Wong M, Wu F, Hurni CA, et al. (2012) Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source Applied Physics Letters. 100 |
Hurni CA, Choi S, Bierwagen O, et al. (2012) Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films Applied Physics Letters. 100: 82106 |
Kim T, Losurdo M, Choi S, et al. (2012) Real-time studies of In-adlayer during PAMBE of InGaN/GaN MQWs Physica Status Solidi (C). 9: 1036-1039 |
Dasgupta S, Nidhi, Choi S, et al. (2011) Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy Applied Physics Express. 4: 45502 |
Kaun SW, Wong MH, Dasgupta S, et al. (2011) Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors Applied Physics Express. 4: 24101 |