Thomas J. Rotter, Ph.D.
Affiliations: | 2007 | University of New Mexico, Albuquerque, NM, United States |
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Parents
Sign in to add mentorKevin J. Malloy | grad student | 2007 | Univ. of New Mexico | |
(Growth and properties of self assembled indium arsenide quantum dash laser active regions.) |
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Publications
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Klein B, Gautam N, Plis E, et al. (2014) Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32 |
Jahan NA, Ahirwar P, Rotter TJ, et al. (2013) Spectral and transient luminescence measurements on GaSb/AlGaSb quantum wells grown on GaSb/GaAs heterojunctions with and without interfacial misfit arrays Japanese Journal of Applied Physics. 52 |
Plis E, Klein B, Myers S, et al. (2013) Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31 |
Jahan NA, Hermannstädter C, Sasakura H, et al. (2013) Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells Journal of Applied Physics. 113 |
Jahan NA, Hermannstädter C, Huh JH, et al. (2013) Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates Journal of Applied Physics. 113 |
Laurain A, Hader J, Lai YY, et al. (2012) Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance Proceedings of Spie - the International Society For Optical Engineering. 8242 |
Schuler-Sandy T, Myers S, Klein B, et al. (2012) Gallium free type II InAs/InAs xSb 1-x superlattice photodetectors Applied Physics Letters. 101 |
Barve AV, Kim JO, Sharma YD, et al. (2011) Characterization of different transitions in quantum dots-in-a-well (DWELL) infrared photodetectors Proceedings of Spie. 8012: 801241 |
Wang C, Li C, Hasselbeck MP, et al. (2011) GaAs/GaInP double heterostructure characterization for laser cooling of semiconductors Proceedings of Spie. 7951 |
Albrecht AR, Rotter TJ, Hains CP, et al. (2011) High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure Proceedings of Spie - the International Society For Optical Engineering. 7919 |