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Jingyu Lin

Affiliations: 
1992-2008 Department of Physics Kansas State University, Manhattan, KS, United States 
 2008- Texas Tech University, Lubbock, TX 
Area:
Condensed Matter Physics
Website:
http://www.depts.ttu.edu/ece/faculty/faculty.php?name=Jingyu Lin
Google:
"Jingyu Lin"
Bio:

http://www.depts.ttu.edu/ece/faculty/CVs/jlin_2015.pdf

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Parents

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Arnold Honig grad student 1985-1989 Syracuse

Children

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Ke-Cai Zeng grad student 2000 Kansas State University
Jagat B. Shakya grad student 2004 Kansas State University
Bed N. Pantha grad student 2009 Kansas State University

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Publications

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Yan Y, Sun Z, Zhao W, et al. (2019) Optical properties of GaN/Er:GaN/GaN core–cladding planar waveguides Applied Physics Express. 12: 75505-75505
Maity A, Grenadier SJ, Li J, et al. (2019) Effects of surface recombination on the charge collection in h-BN neutron detectors Journal of Applied Physics. 125: 104501
Wang Q, Uddin R, Du X, et al. (2018) Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells Applied Physics Express. 12: 011002
Yang J, Ren F, Khanna R, et al. (2017) Annealing of dry etch damage in metallized and bare (-201) Ga2O3 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 51201
Liu S, He R, Ye Z, et al. (2017) Large-Scale Growth of High-Quality Hexagonal Boron Nitride Crystals at Atmospheric Pressure from an Fe–Cr Flux Crystal Growth & Design. 17: 4932-4935
Butler S, Jiang H, Lin J, et al. (2017) Hyperspectral Nonlinear Optical Light Generation from a Monolithic GaN Microcavity Advanced Optical Materials. 5: 1600804
Sun ZY, Li J, Zhao WP, et al. (2016) Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers Applied Physics Letters. 109
Al Tahtamouni TM, Du X, Lin J, et al. (2015) Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition Optical Materials Express. 5: 648-654
Jeon DW, Sun Z, Li J, et al. (2015) Erbium doped GaN synthesized by hydride vapor-phase epitaxy Optical Materials Express. 5: 596-602
Al Tahtamouni TM, Du X, Li J, et al. (2015) Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition Optical Materials Express. 5: 274-280
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