Yong-Hang Zhang

Affiliations: 
Physics Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science Engineering
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"Yong-Hang Zhang"
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Publications

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Tsai C, Zhang Y, Ju Z, et al. (2020) Study of vertical hole transport in InAs/InAsSb type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy Applied Physics Letters. 116: 201108
Zhang F, Castaneda JF, Chen S, et al. (2020) Comparative studies of optoelectrical properties of prominent PV materials: Halide perovskite, CdTe, and GaAs Materials Today. 36: 18-29
Campbell CM, Tsai C, Ding J, et al. (2019) Epitaxial Lift Off of II-VI Thin Films Using Water-Soluble MgTe Ieee Journal of Photovoltaics. 9: 1834-1838
Niaz IA, Miah MAR, Yan L, et al. (2019) Modeling Gain Mechanisms in Amorphous Silicon Due to Efficient Carrier Multiplication and Trap-Induced Junction Modulation Journal of Lightwave Technology. 37: 5056-5066
He Z, Campbell CM, Lassise MB, et al. (2019) Monolithically integrated CdTe/InSb visible/midwave-infrared two-color photodetectors Infrared Physics & Technology. 97: 58-62
Wang X, Campbell C, Zhang Y, et al. (2018) Band alignment at the CdTe/InSb (001) heterointerface Journal of Vacuum Science and Technology. 36: 31101
Lassise MB, Wang P, Tracy BD, et al. (2018) Growth of II-VI/III-V heterovalent quantum structures Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36
Becker JJ, Campbell CM, Tsai C, et al. (2018) Monocrystalline 1.7-eV-Bandgap MgCdTe Solar Cell With 11.2% Efficiency Ieee Journal of Photovoltaics. 8: 581-586
Swanson DE, Reich C, Abbas A, et al. (2018) CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells Journal of Applied Physics. 123: 203101
Liao M, Campbell C, Tsai CY, et al. (2018) Strain Analysis of CdTe on InSb Epitaxial Structures Using X-ray-Based Reciprocal Space Measurements and Dynamical Diffraction Simulations Journal of Electronic Materials. 47: 5666-5670
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