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John Kouvetakis

Affiliations: 
Physics Arizona State University, Tempe, AZ, United States 
Area:
Condensed Matter Physics, Materials Science Engineering, Electronics and Electrical Engineering
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Parents

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Neil Bartlett grad student UC Berkeley (Chemistry Tree)

Children

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Jennifer L. Taraci grad student 2002 Arizona State
Cole J. Ritter grad student 2003 Arizona State
Levi Torrison grad student 2003 Arizona State
Candi S. Cook grad student 2006 Arizona State
Change Weng grad student 2010 Arizona State
Richard Beeler grad student 2012 Arizona State
Gordon Grzybowski grad student 2013 Arizona State

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Publications

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Kouvetakis J, Wallace PM, Xu C, et al. (2023) Synthesis of High Sn Content GeSiSn (0.1 < < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications. Acs Applied Materials & Interfaces. 15: 48382-48394
Sims P, Wallace P, Liu L, et al. (2020) Synthesis of heteroepitaxial BP and related Al-B-Sb-As-P films via CVD of Al(BH4)3 and MH3 (M=P, As, Sb) at temperatures below 600 °C Semiconductor Science and Technology. 35: 085034
Hogsed M, Choe K, Miguel N, et al. (2020) Radiation-induced electron and hole traps in Ge1 − xSnx (x = 0–0.094) Journal of Applied Physics. 127: 065708
Williams D, Kouvetakis J, O'Keeffe M. (2019) Synthesis of Nanoporous Cubic In(CN)(3) and In(1)(-)(x)()Ga(x)()(CN)(3) and Corresponding Inclusion Compounds. Inorganic Chemistry. 37: 4617-4620
Kouvetakis J, McMurran J, Matsunaga P, et al. (2019) Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H(3)C)(3)SiN(3).GaCl(3), en Route to Cl(2)GaN(3) and Its Derivatives: Inorganic Precursors to Heteroepitaxial GaN. Inorganic Chemistry. 36: 1792-1797
Ryu M, Harris TR, Wang B, et al. (2019) Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point Journal of the Korean Physical Society. 75: 577-585
Kouvetakis J, Tolle J, Mathews J, et al. (2019) (Invited) Si-Ge-Sn Technologies: From Molecules to Materials to Prototype Devices Ecs Transactions. 33: 615-628
Wang B, Hogsed MR, Harris TR, et al. (2019) Enhanced optical and electrical performance of Ge1−x Sn x /Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments Semiconductor Science and Technology. 34: 045014
Xu C, Wallace PM, Ringwala DA, et al. (2019) Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties Applied Physics Letters. 114: 212104
Xu C, Kouvetakis J, Menéndez J. (2019) Doping dependence of the optical dielectric function in n-type germanium Journal of Applied Physics. 125: 085704
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